JP2017191934A5 - - Google Patents

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JP2017191934A5
JP2017191934A5 JP2017074988A JP2017074988A JP2017191934A5 JP 2017191934 A5 JP2017191934 A5 JP 2017191934A5 JP 2017074988 A JP2017074988 A JP 2017074988A JP 2017074988 A JP2017074988 A JP 2017074988A JP 2017191934 A5 JP2017191934 A5 JP 2017191934A5
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insulating layer
oxide semiconductor
semiconductor layer
layer
forming
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JP2017191934A (ja
JP6987520B2 (ja
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JP2017074988A 2016-04-08 2017-04-05 半導体装置 Active JP6987520B2 (ja)

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JP2016078347 2016-04-08
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JP2017191934A JP2017191934A (ja) 2017-10-19
JP2017191934A5 true JP2017191934A5 (https=) 2020-05-14
JP6987520B2 JP6987520B2 (ja) 2022-01-05

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JP2023071278A Withdrawn JP2023099557A (ja) 2016-04-08 2023-04-25 半導体装置
JP2024176875A Active JP7796192B2 (ja) 2016-04-08 2024-10-09 半導体装置
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JP2024176875A Active JP7796192B2 (ja) 2016-04-08 2024-10-09 半導体装置
JP2025272354A Pending JP2026040554A (ja) 2016-04-08 2025-12-22 半導体装置

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TWI813944B (zh) * 2021-02-08 2023-09-01 友達光電股份有限公司 主動元件基板及主動元件基板的製造方法
CN112882606B (zh) * 2021-03-04 2022-12-27 业成科技（成都）有限公司 触控面板
KR102690226B1 (ko) * 2022-06-16 2024-08-05 한국생산기술연구원 박막 트랜지스터 및 이의 제조 방법
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