JP2017098550A - パワー半導体デバイス - Google Patents
パワー半導体デバイス Download PDFInfo
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Abstract
Description
図1は本発明の第1の実施形態のパワー半導体デバイスの一部を示す図であり、図2は図1におけるII-II線に沿った部分断面図である。
図3と図4とは、半導体デバイス及びプロセス模擬ソフト(TCAD)により、この実施形態のパワー半導体デバイスを模擬実験した結果を示す図である。
従来のパワー半導体デバイスの終端部は、ドーピング濃度が同じである複数の第1の導電型半導体とドーピング濃度が同じである複数の第2の導電型半導体とにより構成されているダイオードを使用する。従って、従来のパワー半導体デバイスを、その終端部が本発明のパワー半導体デバイスの終端部32と同等の絶縁耐力を備えるようにするには、終端部の体積を増大することが必要になる。
本発明のパワー半導体デバイスの第2の実施形態は、上記第1の実施形態と類似する構成を有するので、ここでは詳しい説明を省略し、その相違点のみを説明する。
本発明のパワー半導体デバイスの第3の実施形態は、上記第1の実施形態と類似する構成を有するので、ここでは詳しい説明を省略し、その相違点のみを説明する。
本発明のパワー半導体デバイスの第4の実施形態は、上記第3の実施形態と類似する構成を有するので、ここでは詳しい説明を省略し、その相違点のみを説明する。
本発明のパワー半導体デバイスの第5の実施形態は、上記第4の実施形態と類似する構成を有するので、ここでは詳しい説明を省略し、その相違点のみを説明する。
図8は本発明の第5の実施形態のパワー半導体デバイスを示す部分断面図である。
この実施形態において、ガードリング部323は、第1の導電型半導体領域321の頂面に、上記第2の導電型半導体の材料により形成されているガードリング半導体部3232を更に有する。ガードリング電極3231は、絶縁部34を通過して、ガードリング半導体部3232に接続されている。なお、ガードリング半導体部3232のドーピング濃度は、1×1016cm-3〜1×1020cm-3の範囲内にある。
本発明のパワー半導体デバイスの第6の実施形態は、上記第3の実施形態と類似する構成を有するので、ここでは詳しい説明を省略し、その相違点のみを説明する。
3 本体
31 能動部
311 第1の導電型半導体柱状領域
312 第2の導電型半導体柱状領域
313 ウエル領域
314 ソース領域
315 ゲート領域
316 トランジスタ
317 ゲート電極
318 ゲート絶縁層
319 能動部頂面
32 終端部
320 終端部頂面
321 第1の導電型半導体領域
322 第2の導電型半導体領域
323 ガードリング部
3231 ガードリング電極
3232 ガードリング半導体部
33 空乏領域
34 絶縁部
41 第1の電極
42 第2の電極
P、N+P ブロック
X 第1の方向
Y 第2の方向
Claims (15)
- 基板と、能動部と終端部と絶縁部とを有して前記基板の一側に形成されている本体と、前記本体の前記基板に対する反対側に設置されている第1の電極と、前記基板の一側の反対側に設置されている第2の電極と、を有するパワー半導体デバイスであって、
前記終端部は、第1の導電型半導体領域と、前記第1の導電型半導体領域と共に接合部を形成する第2の導電型半導体領域と、前記本体の前記反対側にある終端部頂面と、を有し、前記能動部において前記第1の電極及び前記基板の間にある周面を囲むように形成されており、
前記絶縁部は、前記終端部頂面に設置されており、
前記第1の導電型半導体領域は、第1の導電型半導体のドーピング濃度が前記終端部頂面から前記基板へ徐々に減少するように形成されており、
前記第1の電極は、一部分が前記絶縁部に設置され、他の部分が前記能動部と電気的に接続するように設置されていることを特徴とするパワー半導体デバイス。 - 前記能動部は、互いに並列されている複数のトランジスタを有し、
前記第1の電極は、前記他の部分が前記能動部の前記複数のトランジスタと電気的に接続するように設置されていることを特徴とする請求項1に記載のパワー半導体デバイス。 - 前記能動部は、互いに並列されている複数の整流器を有し、
前記第1の電極は、前記他の部分が前記能動部の前記複数の整流器と電気的に接続するように設置されていることを特徴とする請求項1に記載のパワー半導体デバイス。 - 前記第1の導電型半導体領域は、前記終端部頂面から前記基板へ延伸して形成されており、
前記第2の導電型半導体領域は、前記第1の導電型半導体領域を囲むように、前記基板から前記終端部頂面まで延伸して形成されていることを特徴とする請求項1〜3のいずれか一項に記載のパワー半導体デバイス。 - 前記第1の導電型半導体領域は、前記能動部及び前記終端部頂面に近い所から、第1の導電型半導体のドーピング濃度が徐々に減少するように、前記終端部における外周面及び前記基板へ延伸して形成されていることを特徴とする請求項1〜4のいずれか一項に記載のパワー半導体デバイス。
- 平板状である前記基板と平行する上、前記能動部から前記終端部の外周面へと張り出す方向を第1の方向とし、
前記第1の方向と直交する上、前記終端部頂面から前記基板へと張り出す方向を第2の方向とし、
前記第1の導電型半導体領域は、第1の導電型半導体のドーピング濃度が前記第1の方向に沿って、徐々に減少するように形成されていることを特徴とする請求項1〜4のいずれか一項に記載のパワー半導体デバイス。 - 平板状である前記基板と平行する上、前記能動部から前記終端部の外周面へと張り出す方向を第1の方向とし、
前記第1の方向と直交する上、前記終端部頂面から前記基板へと張り出す方向を第2の方向とし、
前記第1の導電型半導体領域は、第1の導電型半導体のドーピング濃度が前記第2の方向に沿って、徐々に減少するように形成されていることを特徴とする請求項1〜4のいずれか一項に記載のパワー半導体デバイス。 - 前記第1の導電型半導体領域は、前記第1の方向に沿って並んでいる複数の半導体層を有し、
相隣する2つの前記半導体層のドーピング濃度の差は、50%以下になるように形成されていることを特徴とする請求項6または7に記載のパワー半導体デバイス。 - 前記第1の導電型半導体領域は、前記第2の方向に沿って並んでいる複数の半導体層を有し、
相隣する2つの前記半導体層のドーピング濃度の差は、50%以下になるように形成されていることを特徴とする請求項6または7に記載のパワー半導体デバイス。 - 前記第1の導電型半導体領域は、前記第1の方向と前記第2の方向とに沿って並んでいる複数の半導体層を有し、
前記第1の方向に沿って並んでいる前記複数の半導体層は、互いに連接されていることを特徴とする請求項6または7に記載のパワー半導体デバイス。 - 平板状である前記基板と平行する上、前記能動部から前記終端部の外周面へと張り出す方向を第1の方向とし、
前記第2の導電型半導体領域は、第2の導電型半導体のドーピング濃度が前記第1の方向に沿って、徐々に増えるように形成されていることを特徴とする請求項1〜5のいずれか一項に記載のパワー半導体デバイス。 - 平板状である前記基板と平行する上、前記能動部から前記終端部の外周面へと張り出す方向を第1の方向とし、
前記第1の方向と直交する上、前記終端部頂面から前記基板へと張り出す方向を第2の方向とし、
前記第2の導電型半導体領域は、第2の導電型半導体のドーピング濃度が前記第2の方向に沿って、徐々に増えるように形成されていることを特徴とする請求項1〜5のいずれか一項に記載のパワー半導体デバイス。 - 前記終端部は、前記絶縁部に配置されているガードリング電極を有するガードリング部を更に有することを特徴とする請求項1に記載のパワー半導体デバイス。
- 前記ガードリング部は、前記第1の導電型半導体領域の頂面に、前記第2の導電型半導体領域の第2の導電型半導体の材料により形成されているガードリング半導体部を更に有し、
前記ガードリング電極は、前記絶縁部を通過して、前記ガードリング半導体部に接続されていることを特徴とする請求項13に記載のパワー半導体デバイス。 - 前記終端部は、前記絶縁部に配置され、前記第2の導電型半導体領域の第2の導電型半導体の材料により、前記第1の導電型半導体領域の頂面と前記終端部の前記能動部に近い部分とに形成されているガードリング半導体部を有するガードリング部を更に有することを特徴とする請求項1に記載のパワー半導体デバイス。
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