TW201719888A - 具有漸變濃度之邊緣終端結構的功率半導體裝置 - Google Patents

具有漸變濃度之邊緣終端結構的功率半導體裝置 Download PDF

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TW201719888A
TW201719888A TW104138971A TW104138971A TW201719888A TW 201719888 A TW201719888 A TW 201719888A TW 104138971 A TW104138971 A TW 104138971A TW 104138971 A TW104138971 A TW 104138971A TW 201719888 A TW201719888 A TW 201719888A
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substrate
semiconductor
edge termination
concentration
top surface
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TW104138971A
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TWI581425B (zh
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Chih-Fang Huang
Kung-Yen Lee
Chia-Hui Cheng
sheng-zhong Wang
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Macroblock Inc
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Priority to TW104138971A priority Critical patent/TWI581425B/zh
Priority to CN201611033986.8A priority patent/CN106783940B/zh
Priority to US15/359,209 priority patent/US9865676B2/en
Priority to EP16200052.5A priority patent/EP3174104B1/en
Priority to JP2016226847A priority patent/JP6334655B2/ja
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Abstract

一種具有漸變濃度之邊緣終端結構的功率半導體裝置，包含一基板、一本體，及一電極單元。本體形成於基板上並包括主動部、環圍主動部的邊緣終端部，及絕緣氧化層，主動部具有多個相互並聯的電晶體，邊緣終端部具有呈第一型半導體特性的第一半導體區、呈第二型半導體特性的第二半導體區，及遠離基板的頂面，絕緣氧化層與基板相間隔地形成於邊緣終端部，第一半導體特性的濃度由頂面往基板方向遞減。電極單元包括與電晶體連接且部分形成於絕緣氧化層上的第一電極層，及與本體相間隔地形成於基板的第二電極層。

Description

具有漸變濃度之邊緣終端結構的功率半導體裝置
本發明是有關於一種功率半導體裝置，特別是指一種具有漸變濃度之邊緣終端結構的功率半導體裝置。
功率半導體裝置通常包含一主動部及一圍繞該主動部邊緣而用以將主動部累積的靜電荷或不必要的漏電流帶走的邊緣終端部。
一般來說，該主動部由多個電晶體並聯而成，形成多個彼此相互交替排列的n型半導體柱與p型半導體柱。然而，此種邊緣終端部結構的n型半導體柱與p型半導體柱彼此的間距與寬度需精準設計，若間距過大會無法發揮承受崩潰電壓的功效而提早於該主動部崩潰，若其彼此間距過小則n型半導體柱與p型半導體柱之間的空乏區無法有效延伸，而無法承受較高的崩潰電壓。
另一種邊緣終端部則是形成均勻的一n型半導體層與一p型半導體層而構成一二極體結構。然而，以此種方式形成邊緣終端部時，於降低n型半導體層與p型半導體層的載子濃度時，雖能 提升該邊緣終端部所構成的二極體的空乏區，但二極體的電場則會因低載子濃度而變小且具有不均勻的電力線，從而僅能承受較小的崩潰電壓；當提高n型半導體層與p型半導體層的載子濃度時，雖能提高二極體的電場，但其空乏區則會隨之變小，也僅能承受較小的崩潰電壓。
因此，本發明之目的，即在提供一種具有漸變濃度之邊緣終端結構的功率半導體裝置。
於是，本發明具有漸變濃度之邊緣終端結構的功率半導體裝置，包含一基板、一本體，及一電極單元。
該本體形成於該基板上，並包括一主動部、一環圍該主動部的邊緣終端部，及一絕緣氧化層，該主動部具有多個相互並聯的電晶體，該邊緣終端部具有一呈一第一型半導體特性的第一半導體區、一呈一第二型半導體特性的第二半導體區，及一遠離該基板的頂面，該絕緣氧化層與該基板相間隔地形成於該邊緣終端部上，該第一半導體特性的濃度由該頂面往該基板方向遞減。
該電極單元包括一與該等電晶體連接且部分形成於該絕緣氧化層上的第一電極層，及一與該本體相間隔地形成於該基板的第二電極層。
本發明之功效在於：藉由讓該第一半導體區的該第一型半導體特性的濃度由該絕緣氧化層往該基板方向遞減，當對該邊緣終端部施加電壓時，能延伸該第一半導體區與該第二半導體區之間的空乏區並具有均勻的電力線，從而能承受較高的崩潰電壓。
2‧‧‧基板
3‧‧‧本體
31‧‧‧主動部
311‧‧‧第一柱狀區
312‧‧‧第二柱狀區
313‧‧‧井區
314‧‧‧源極區
315‧‧‧閘極區
322‧‧‧第二半導體區
323‧‧‧表面
324‧‧‧表面
325‧‧‧絕緣氧化層
33‧‧‧空乏區
4‧‧‧電極單元
41‧‧‧第一電極層
42‧‧‧第二電極層
316‧‧‧電晶體
32‧‧‧邊緣終端部
320‧‧‧頂面
321‧‧‧第一半導體區
X‧‧‧第一方向
Y‧‧‧第二方向
R‧‧‧徑向
本發明之其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中：圖1是一示意圖，說明本發明具有漸變濃度之邊緣終端結構的功率半導體裝置之省略一絕緣氧化層與一電極單元的一第一實施例；圖2是一剖面側視示意圖，輔助說明圖1沿II-II直線之該第一實施例；圖3是一模擬示意圖，輔助說明圖2的一邊緣終端部；圖4是一模擬示意圖，輔助說明圖2的該邊緣終端部；圖5是一模擬示意圖，說明本發明具有漸變濃度之邊緣終端結構的功率半導體裝置的一第二實施例；及圖6是一示意圖，說明本發明具有漸變濃度之邊緣終端結構的功率半導體裝置的一第三實施例。
在本發明被詳細描述之前，應當注意在以下的說明內容中，類似的元件是以相同的編號來表示。
參閱圖1與圖2，本發明具有漸變濃度之邊緣終端結構的功率半導體裝置之一第一實施例，包含一由半導體材料所構成的基板2、一形成於該基板2上的本體3，及一形成於該本體3上的電極單元4。
具體地說，該本體3包括一主動部31、一環圍該主動部31的邊緣終端部32，及一絕緣氧化層325。該主動部31包括多個彼此交錯排列且分別呈第一型半導體特性與第二型半導體特性的第一柱狀區311及第二柱狀區312、該每一個第一柱狀區311具有一自該主動部31頂面往該基板2方向延伸的井區313、兩個形成於該井區313，彼此間隔且鄰近該主動部31頂面的源極區314，及多個分別形成於該等第二柱狀區312的頂面，並分別與相鄰的兩個源極區314連接的閘極區315，從而構成多個相互並聯且具有超級接面(super junction)的電晶體316。要說明的是，無論是具有超級接面電晶體或一般電晶體均可適用於構成該主動部31，由於該等電晶體316細部結構為本領域技術人員所周知，且非本發明之重點，因此，於此不加以贅述。
該邊緣終端部32具有一遠離該基板2的頂面320、一呈一第一型半導體特性且由該頂面320向該基板2方向延伸的第一半 導體區321，及一呈一第二型半導體特性且由該基板2沿該第一半導體區321的邊緣往遠離該基板2方向延伸至該頂面320的第二半導體區322，且該第一半導體區321與該第二半導體區322分別具有一表面323、324；其中，於本實施例中，該第一半導體區321的該表面323與該第二半導體區322的該表面324共同構成該邊緣終端部32的頂面320。該絕緣氧化層325與該基板2相間隔地形成於該邊緣終端部32的頂面320上。
該電極單元4包括一形成於該本體3而與該等電晶體316的源極區314連接，並部分形成於該絕緣氧化層325上而與該邊緣終端部32耦接的第一電極層41，及一與該本體3相間隔地形成於於基板2的第二電極層42。
詳細地說，該第一型半導體與該第二型半導體的摻雜原子並無特別限制，於本實施例中，該第一型半導體與該第二型半導體分別是以含有3價原子的p型半導體與含有5價原子的n型半導體為例作說明。該第一型半導體特性的濃度是由該第一半導體區321鄰近該主動部31與該頂面320處往邊緣終端部32與該基板2處以一徑向R的方向發散而呈梯度地降低。
更詳細地說，由於該邊緣終端部32的形成是先於該基板2上磊晶成長n型半導體層後，再對此n型半導體層進行摻雜，從而構成具有p型半導體特性的該第一半導體區321。換句話說，圖2 的該第一半導體區321中所顯示之陣列的方格P是用以示意摻雜過程，也就是說，此摻雜過程是局部進行摻雜，並由該頂面320至該基板2的垂直方向及該主動部31至該邊緣終端部32水平方向調整摻雜濃度，使p型半導體特性沿該該頂面320至該基板2的垂直方向及該主動部31至該邊緣終端部32水平方向呈梯度遞減。本實施例是以離子佈值方式配合一光罩孔洞及針對多次堆疊的磊晶層之不同層施打不同的離子濃度來實施作說明，然而，實際摻雜方式並無特別限制。詳細地說，本實施例是透過離子佈植製程，藉由先後執行以不同劑量來控制摻雜濃度來做垂直摻雜調變，再搭配光罩孔洞的開口率以於該邊緣終端部32的頂面320控制離子通過來做橫向摻雜調變，來達成具有斜向漸變濃度的第一半導體區321。
因此，以實際情況而言，圖2位於靠近該基板2及該邊緣終端部32尾端的方格P處雖然仍有進行p型半導體摻雜，但是因為具有最低的p型半導體特性濃度，因此，其整體半導體特性加總之後(即n型半導體特性與p型半導體特性的加總)，其方格P的頂層與靠近該主動部31處，會幾乎屬於p型半導體特性；而方格P靠近該基板2的邊緣終端部32處會幾乎屬於n型半導體特性。
因此，當功率半導體裝置施加電壓產生的一空乏區33於實際情況會位於如圖2所示之處。
此處值得一提的是，於該第一實施例中，定義一平行該基板2並由該主動部31指向該邊緣終端部32為第一方向X，及一垂直該第一方向X並由該頂面320指向該基板2為第二方向Y，該第一半導體區321可視為是由沿該第一方向X具有N層不同濃度的半導體層(圖未示，N>1)，及沿該第二方向Y具有M層半導體層(圖未示，M>1)所構成。較佳地，相鄰的半導體層的第一型半導體特性的濃度差異小於20%，且該等N層半導體層彼此相連，而該等M層半導體層則可彼此相連或彼此不相連。
配合地參閱圖3與圖4，圖3是使用半導體元件與製程模擬軟體(TACD)進行該第一實施例的模擬圖，而呈現該邊緣終端部32之該第一半導體區321所具有第一型半導體特性濃度漸變的特性。一般來說，與該主動部31耦接的該邊緣終端部32主要作用在於導引多餘電荷至外界，以防止該主動部31崩潰。當使用本發明具有漸變濃度之邊緣終端結構的功率半導體裝置時，外界分別提供該基板2(此處作為該電晶體316與邊緣終端部32的汲極區)與源極區314之間，及該閘極區315與該源極區314之間一正電壓時，該電晶體316成開啟狀態。由於本實施例該邊緣終端部32的第一半導體區321的第一型半導體特性具有漸變的濃度，由圖3可知此漸變濃度的特性能使該邊緣終端部32因在汲極區施加正電壓所產生的空乏區33能進行延伸。
進一步地，圖4顯示有該邊緣終端部32的電力線示意圖，由圖4可知由於第一半導體區321中的第一型半導體特性的濃度是斜下的漸變，因此，該主動部31至該邊緣終端部32及該頂面320至該基板2的p型摻雜濃度變化由高到低，從而使得電力線容易延伸，而此一特點能讓本發明功率半導體裝置相較於現有的功率半導體裝置，在製作承受同樣的崩潰電壓的該邊緣終端部32時，能製作成較小的體積。詳細地說，由於現有的功率半導體裝置的邊緣終端部是使用讓第一型半導體特性與第二型半導體特性呈單一濃度狀態的二極體，因此，若要承受與本發明相當的崩潰電壓時，必須讓邊緣終端部的整體體積增加，以提高阻值而能承受較高的崩潰電壓。由此可知，本發明該第一半導體區321所具有之濃度漸變的第一型半導體特性不僅能延伸該邊緣終端部32產生的空乏區33，還能縮小邊緣終端部32的體積而承受較高的崩潰電壓。
配合地參閱圖5，本發明具有漸變濃度之邊緣終端結構的功率半導體裝置之一第二實施例大致是相同於該第一實施例，其不同之處在於，該第一半導體區321的第一型半導體特性的濃度只有該頂面320垂直往該基板2漸變。詳細地說，圖5顯示有模擬該第二實施例的邊緣終端部32的模擬圖，於該第二實施例中，該第一型半導體特性的濃度只有沿該第二方向Y降低。據此，由圖5的TACD 模擬圖可推知，當第一型半導體特性的濃度若僅沿該第二方向Y降低時，亦能有效延伸於該3產生的空乏區33。
配合地參閱圖6，本發明具有漸變濃度之邊緣終端結構的功率半導體裝置之一第三實施例大致是相同於該第一實施例，其不同之處在於，該第三實施例是同時以兩種摻雜源，對該主動部31及該邊緣終端部32進行摻雜，以此方式進行能使該主動部31的效能更好。詳細地說，本實施例的摻雜方式主要是藉由建構該第二半導體區322與該第二柱狀區312時，以於該每一層磊晶層中同時摻雜3價原子與5價原子，且讓3價原子的摻雜量沿該頂面320往該基板2(即該第二方向Y)及由該主動部31往該邊緣終端部32方向(即該第一方向X)遞減，而讓5價原子的摻雜量沿該頂面320往該基板2(即該第二方向Y)及由該主動部31往該邊緣終端部32的方向(即該第一方向X)遞增。也就是說，總體來看，以此方式摻雜完成的該邊緣終端部32的p型半導體濃度，會由靠近該主動部31與該頂面320處沿該基板2與該邊緣終端部32方向逐漸遞減；而n型半導體濃度，則會由該頂面320往該基板2方向(即該第二方向Y)遞增及由該主動部31往該邊緣終端部32的方向(即該第一方向X)遞增，藉著對每一層磊晶層施打不同劑量的3價原子及5價原子，及讓通過3價原子的光罩的開口改變而造成與第一實施例相同的效果。
綜上所述，本發明具有漸變濃度之邊緣終端結構的功率半導體裝置，藉由讓該邊緣終端部32的該第一半導體區321的第一型半導體特性的濃度由該頂面320往該基板2及該主動部31往該邊緣終端部32方向呈梯度遞減，並讓相鄰濃度差異小於20%，使對該邊緣終端部32施加電壓時，能延伸該第一半導體區321與該第二半導體區322之間的空乏區33並具有均勻的電力線，從而使功率半導體裝置能承受較高的崩潰電壓，故確實能達成本發明之目的。
惟以上所述者，僅為本發明之實施例而已，當不能以此限定本發明實施之範圍，凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。
2‧‧‧基板
3‧‧‧本體
31‧‧‧主動部
311‧‧‧第一柱狀區
312‧‧‧第二柱狀區
313‧‧‧井區
314‧‧‧源極區
315‧‧‧閘極區
322‧‧‧第二半導體區
323‧‧‧表面
324‧‧‧表面
325‧‧‧絕緣氧化層
33‧‧‧空乏區
4‧‧‧電極單元
41‧‧‧第一電極層
42‧‧‧第二電極層
316‧‧‧電晶體
32‧‧‧邊緣終端部
320‧‧‧頂面
321‧‧‧第一半導體區
X‧‧‧第一方向
Y‧‧‧第二方向
R‧‧‧徑向

Claims (10)

  1. 一種具有漸變濃度之邊緣終端結構的功率半導體裝置，包含：一基板；一本體，形成於該基板上，並包括一主動部、一環圍該主動部的邊緣終端部，及一絕緣氧化層，該主動部具有多個相互並聯的電晶體，該邊緣終端部具有一呈一第一型半導體特性的第一半導體區、一呈一第二型半導體特性的第二半導體區，及一遠離該基板的頂面，該絕緣氧化層與該基板相間隔地形成於該邊緣終端部上，該第一半導體特性的濃度由該頂面往該基板方向遞減；及一電極單元，包括一與該等電晶體連接且部分形成於該絕緣氧化層上的第一電極層，及一與該本體相間隔地形成於該基板的第二電極層。
  2. 如請求項1所述的具有漸變濃度之邊緣終端結構的功率半導體裝置，其中，該第一半導體區由該頂面向該基板方向延伸，該第二半導體區由該基板沿該第一半導體區的邊緣往遠離該基板方向延伸至該頂面。
  3. 如請求項2所述的具有漸變濃度之邊緣終端結構的功率半導體裝置，其中，該第一型半導體特性的濃度由該第一半導體區之鄰近該主動部與該頂面處往該邊緣終端部與該基板處呈徑向發散地降低。
  4. 如請求項2所述的具有漸變濃度之邊緣終端結構的功率半導體裝置，其中，定義一平行該基板並從該主動部往該邊 緣終端部為第一方向，及一垂直該第一方向的並從該頂面至該基板為第二方向，該第一型半導體特性的濃度沿該第二方向降低。
  5. 如請求項2所述的具有漸變濃度之邊緣終端結構的功率半導體裝置，其中，定義一平行該基板並從該主動部往該邊緣終端部為第一方向，及一垂直該第一方向並從該頂面至該基板為第二方向，該第一型半導體特性的濃度沿該第一方向降低。
  6. 如請求項2所述的具有漸變濃度之邊緣終端結構的功率半導體裝置，其中，該第一半導體區沿該第一方向具有N層半導體層，N>1，相鄰的該半導體層的第一型半導體特性的濃度差異小於20%。
  7. 如請求項2所述的具有漸變濃度之邊緣終端結構的功率半導體裝置，其中，該第一半導體區沿該第二方向具有M層半導體層，M>1，相鄰的該半導體層的第一型半導體特性的濃度差異小於20%。
  8. 如請求項2所述的具有漸變濃度之邊緣終端結構的功率半導體裝置，其中，該第一半導體區沿該第一方向具有N層半導體層，N>1，該等N層半導體層彼此相連，該第一半導體區沿該第二方向具有M層半導體層，M>1，該等M層半導體層為彼此相連及彼此不相連其中一者。
  9. 如請求項2所述的具有漸變濃度之邊緣終端結構的功率半導體裝置，其中，定義一平行該基板並從該主動部往該邊緣終端部為第一方向，及一垂直該第一方向的並從該頂面 至該基板為第二方向，該第一型半導體特性的濃度由該第一半導體區之鄰近該主動部與該頂面處往該邊緣終端部與該基板處呈徑向發散地降低，該第二型半導體特性的濃度沿該第二方向的反方向降低。
  10. 如請求項2所述的具有漸變濃度之邊緣終端結構的功率半導體裝置，其中，定義一平行該基板並從該主動部往該邊緣終端部為第一方向，及一垂直該第一方向的並從該頂面至該基板為第二方向，該第一型半導體特性的濃度由該第一半導體區之鄰近該主動部與該頂面處往該邊緣終端部與該基板處呈徑向發散地降低，該第二型半導體特性的濃度沿該第一方向的反方向降低。
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