JP6009731B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6009731B2 JP6009731B2 JP2010236394A JP2010236394A JP6009731B2 JP 6009731 B2 JP6009731 B2 JP 6009731B2 JP 2010236394 A JP2010236394 A JP 2010236394A JP 2010236394 A JP2010236394 A JP 2010236394A JP 6009731 B2 JP6009731 B2 JP 6009731B2
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- 239000004065 semiconductor Substances 0.000 title claims description 40
- 239000010410 layer Substances 0.000 claims description 74
- 239000012535 impurity Substances 0.000 claims description 56
- 230000002093 peripheral effect Effects 0.000 claims description 40
- 230000015556 catabolic process Effects 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 14
- 230000007423 decrease Effects 0.000 claims description 9
- 239000002344 surface layer Substances 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 description 15
- 238000005192 partition Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 5
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 108091006146 Channels Proteins 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H01L2924/1203—Rectifying Diode
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
2 p型仕切り領域
3 p型ベース領域
4 表面n型ドリフト層
6 n型ソース領域
7 ゲート絶縁膜
8 ゲート電極
9 層間絶縁膜
10 ソース電極
11 高濃度半導体基板
12 ドレイン電極
13 n型チャネルストッパー領域
14 最外周p型領域
15 フィールド絶縁膜
16 チャネルストッパー電極
17 n型バッファー層
21 n型ドリフト領域
22 p型仕切り領域
31 n型表面領域
32 ガードリング
33 フィールドプレート
100 素子活性部
200 素子周縁部
Z 並列pn層
Claims (2)
- 第1導電型高不純物濃度の半導体基板の一方の主面に垂直方向に堆積される柱状または層状のエピタキシャル層からなる第1導電型半導体領域と第2導電型半導体領域とが主面に平行方向に繰り返し交互に隣接する並列pn層をドリフト層として備え、該並列pn層がオン状態で電流を流し、オフ状態では電圧を保持するように構成され、前記並列pn層の表面に、主電流が流れる素子活性部と該素子活性部の外周に耐圧を確保するための素子周縁部を備える半導体装置において、
前記並列pn層の第2導電型半導体領域が前記並列pn層表面から前記半導体基板側に向かい不純物濃度が低くなる不純物濃度分布を有する並列pn層と、
該並列pn層の前記素子周縁部の表面層に主面に平行に配置される第1導電型表面領域と、
該第1導電型表面領域の表面層に離間して配置される2以上の第2導電型ガードリングと、
第2導電型ガードリングの内周側と外周側にそれぞれ配置され、第2導電型ガードリング表面にそれぞれ電気的に接続される導電性フィールドプレートと、を有し、
前記第1導電型表面領域の厚さが前記素子活性部の下方にある並列pn層の厚さの1/3以下で、且つ、前記第1導電型表面領域の不純物濃度が2×10 14 /cm 3 を超え、8×10 14 /cm 3 未満の範囲から選ばれるいずれかの不純物濃度であることを特徴とする半導体装置。 - 前記素子周縁部の下層の並列pn層が前記素子活性部の下層の並列pn層より繰り返しpn層のピッチ幅が小さいことを特徴とする請求項1記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010236394A JP6009731B2 (ja) | 2010-10-21 | 2010-10-21 | 半導体装置 |
US13/273,544 US8742500B2 (en) | 2010-10-21 | 2011-10-14 | Semiconductor device |
CN201110337700.6A CN102456716B (zh) | 2010-10-21 | 2011-10-21 | 半导体器件 |
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Application Number | Priority Date | Filing Date | Title |
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JP2010236394A JP6009731B2 (ja) | 2010-10-21 | 2010-10-21 | 半導体装置 |
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JP2012089737A JP2012089737A (ja) | 2012-05-10 |
JP6009731B2 true JP6009731B2 (ja) | 2016-10-19 |
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US (1) | US8742500B2 (ja) |
JP (1) | JP6009731B2 (ja) |
CN (1) | CN102456716B (ja) |
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JP5719167B2 (ja) * | 2010-12-28 | 2015-05-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2012204811A (ja) * | 2011-03-28 | 2012-10-22 | Sony Corp | 半導体装置 |
CN104009072A (zh) * | 2013-02-25 | 2014-08-27 | 中国科学院微电子研究所 | 一种绝缘栅双极型晶体管及其制作方法 |
JP6324805B2 (ja) * | 2014-05-19 | 2018-05-16 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP6375176B2 (ja) * | 2014-08-13 | 2018-08-15 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
JP6468824B2 (ja) * | 2014-12-04 | 2019-02-13 | ローム株式会社 | 半導体装置 |
US9515199B2 (en) | 2015-01-02 | 2016-12-06 | Cree, Inc. | Power semiconductor devices having superjunction structures with implanted sidewalls |
US9825128B2 (en) * | 2015-10-20 | 2017-11-21 | Maxpower Semiconductor, Inc. | Vertical power transistor with thin bottom emitter layer and dopants implanted in trenches in shield area and termination rings |
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TWI581425B (zh) * | 2015-11-24 | 2017-05-01 | Macroblock Inc | And a power semiconductor device having an edge terminal structure having a gradation concentration |
CN105470242B (zh) * | 2016-01-21 | 2018-05-08 | 上海华虹宏力半导体制造有限公司 | 密封环及具有密封环的半导体结构 |
US10164078B2 (en) * | 2016-03-18 | 2018-12-25 | Infineon Technologies Americas Corp. | Bipolar semiconductor device with multi-trench enhancement regions |
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JP6740759B2 (ja) * | 2016-07-05 | 2020-08-19 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
CN106571394B (zh) * | 2016-11-01 | 2018-05-11 | 杭州士兰微电子股份有限公司 | 功率器件及其制造方法 |
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JP6870516B2 (ja) * | 2017-07-18 | 2021-05-12 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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US20120098064A1 (en) | 2012-04-26 |
JP2012089737A (ja) | 2012-05-10 |
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