JP2018064022A - 炭化珪素半導体装置 - Google Patents
炭化珪素半導体装置 Download PDFInfo
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- JP2018064022A JP2018064022A JP2016201126A JP2016201126A JP2018064022A JP 2018064022 A JP2018064022 A JP 2018064022A JP 2016201126 A JP2016201126 A JP 2016201126A JP 2016201126 A JP2016201126 A JP 2016201126A JP 2018064022 A JP2018064022 A JP 2018064022A
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- Prior art keywords
- semiconductor substrate
- gate
- silicon carbide
- semiconductor device
- carbide semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 96
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 238000009413 insulation Methods 0.000 abstract description 9
- 210000000746 body region Anatomy 0.000 description 11
- 239000002344 surface layer Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】炭化珪素半導体装置1は、オフ角を有する炭化珪素の半導体基板と、半導体基板の表面から深部に向けて伸びる複数の絶縁トレンチゲートと、を備える。絶縁トレンチゲートは、ゲート絶縁膜と、ゲート絶縁膜を介して半導体基板に対向するゲート電極と、を有する。絶縁トレンチゲートは、半導体基板の表面に対して直交する方向から見たときに、半導体基板の基底面に対して平行な方向が長手方向となるように伸びている。隣り合う絶縁トレンチゲートの側面間の距離をD1とし、ゲート電極の底面から絶縁トレンチゲートの底面までの距離をD2とし、オフ角をθとしたときに、D1×tanθ<D2の関係が成立する。
【選択図】図4
Description
図5及び図6に、変形例の炭化珪素半導体装置2の断面図を模式的に示す。なお、上記した炭化珪素半導体装置1と同一の構成については同一の符号を付し、その説明を省略する。
10:半導体基板
11:ドレイン領域
12:ドリフト領域
13:ボディ領域
14:ボディコンタクト領域
15:ソース領域
22:ドレイン電極
24:ソース電極
30:絶縁トレンチゲート
32:側部ゲート絶縁膜
34:底部ゲート絶縁膜
36:ゲート電極
Claims (1)
- オフ角を有する炭化珪素の半導体基板と、
前記半導体基板の表面から深部に向けて伸びる複数の絶縁トレンチゲートと、を備えており、
前記絶縁トレンチゲートは、
ゲート絶縁膜と、
前記ゲート絶縁膜を介して前記半導体基板に対向するゲート電極と、を有しており、
前記絶縁トレンチゲートは、前記半導体基板の前記表面に対して直交する方向から見たときに、前記半導体基板の基底面に対して平行な方向が長手方向となるように伸びており、
隣り合う前記絶縁トレンチゲートの側面間の距離をD1とし、前記ゲート電極の底面から前記絶縁トレンチゲートの底面までの距離をD2とし、前記オフ角をθとしたときに、D1×tanθ<D2の関係が成立する、炭化珪素半導体装置。
Priority Applications (1)
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JP2016201126A JP6708530B2 (ja) | 2016-10-12 | 2016-10-12 | 炭化珪素半導体装置 |
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JP2016201126A JP6708530B2 (ja) | 2016-10-12 | 2016-10-12 | 炭化珪素半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2018064022A true JP2018064022A (ja) | 2018-04-19 |
JP6708530B2 JP6708530B2 (ja) | 2020-06-10 |
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JP2016201126A Active JP6708530B2 (ja) | 2016-10-12 | 2016-10-12 | 炭化珪素半導体装置 |
Country Status (1)
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JP (1) | JP6708530B2 (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007207935A (ja) * | 2006-01-31 | 2007-08-16 | Fuji Electric Holdings Co Ltd | 炭化珪素半導体素子の製造方法 |
JP2014090057A (ja) * | 2012-10-30 | 2014-05-15 | Mitsubishi Electric Corp | 炭化珪素半導体装置 |
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2016
- 2016-10-12 JP JP2016201126A patent/JP6708530B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007207935A (ja) * | 2006-01-31 | 2007-08-16 | Fuji Electric Holdings Co Ltd | 炭化珪素半導体素子の製造方法 |
JP2014090057A (ja) * | 2012-10-30 | 2014-05-15 | Mitsubishi Electric Corp | 炭化珪素半導体装置 |
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