JP2014229798A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2014229798A JP2014229798A JP2013109360A JP2013109360A JP2014229798A JP 2014229798 A JP2014229798 A JP 2014229798A JP 2013109360 A JP2013109360 A JP 2013109360A JP 2013109360 A JP2013109360 A JP 2013109360A JP 2014229798 A JP2014229798 A JP 2014229798A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 139
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 230000017525 heat dissipation Effects 0.000 claims abstract description 24
- 239000012535 impurity Substances 0.000 claims description 41
- 239000000969 carrier Substances 0.000 abstract description 6
- 230000002093 peripheral effect Effects 0.000 description 43
- 210000000746 body region Anatomy 0.000 description 30
- 238000009792 diffusion process Methods 0.000 description 11
- 238000002955 isolation Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
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- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/11—Device type
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- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Abstract
【解決手段】 半導体装置10の半導体基板12には、ドリフト層24と、ボディ層26と、エミッタ層34と、トレンチゲート電極32が形成されている。半導体基板12は、半導体基板を平面視したときに、放熱部材48に覆われている第1領域20aと、放熱部材に覆われていない第2領域20bとに区分される。トレンチゲート電極の密度は、第1領域と第2領域とで同一となる。そして、第1領域20aに形成されるチャネル部の実効キャリア量を第1領域の面積で除した値は、第2領域20bに形成されるチャネル部の実効キャリア量を第2領域の面積で除した値より大きい。
【選択図】 図1
Description
まず、メイン領域20について説明する。図1,2に示すように、半導体基板12のメイン領域20には、エミッタ領域34と、ボディコンタクト領域35(図2に図示)と、ボディ領域26と、ドリフト領域24と、コレクタ領域22が形成されている。エミッタ領域34は、n+型の半導体領域であり、半導体基板12の上面に臨む範囲に複数形成されている。各エミッタ領域34は、x方向に伸びており、y方向に伸びるゲートトレンチ28(後で詳述)によって分断されている。エミッタ領域34は、そのy方向の幅がw1とされており、y方向に等しい間隔(後述する幅w2)を空けて配置されている。
次に、センス領域50について説明する。センス領域50にも、メイン領域20と同一構造のIGBTが形成されている。すなわち、半導体基板12のセンス領域50には、n+型のエミッタ領域60と、p+型のボディコンタクト領域と、p−型のボディ領域52と、n−型のドリフト領域24と、p+型のコレクタ領域22が形成されている。なお、ボディコンタクト領域は、図1に図示されていないが、図2に示すメイン領域50のボディコンタクト領域35と同様に形成されている。また、センス領域50にも複数のゲートトレンチ54が形成され、ゲートトレンチ54内にはゲート電極58及び絶縁膜56が形成されている。エミッタ領域60、ボディコンタクト領域、ボディ領域52、ドリフト領域24、コレクタ領域22、ゲート電極58及び絶縁膜56によって、センス領域50にIGBTが形成されている。なお、センス領域50に形成されるIGBTの面積は、メイン領域20に形成されるIGBTの面積よりも格段に小さい。
12:半導体基板
20:メイン領域
22:コレクタ領域
24:ドリフト領域
26,52:ボディ領域
32,58:ゲート電極
34,60:エミッタ領域
35:ボディコンタクト領域
38:メインエミッタ電極
48:放熱ブロック
50:センス領域
64:センスエミッタ電極
Claims (4)
- 半導体基板と、
半導体基板の上面に接触している上面電極と、
半導体基板の下面に接触している下面電極と、
上面電極の上方に配置されている放熱部材と、を有しており、
半導体基板には、
第1導電型のドリフト層と、
ドリフト層の上面に接している第2導電型のボディ層と、
ボディ層の上面に接しており、ボディ層によってドリフト層と分離されており、半導体基板の上面に露出すると共に上面電極とオーミック接触している第1導電型の第1半導体層と、
ボディ層の上面に接しており、ボディ層によってドリフト層と分離されており、半導体基板の上面に露出すると共に上面電極とオーミック接触している第2導電型の第2半導体層と、
半導体基板の上面からボディ層を貫通してドリフト層に達するゲートトレンチ内に配置されているトレンチゲート電極と、
トレンチゲート電極とゲートトレンチの壁面との間に配置されているゲート絶縁膜と、が形成されており、
トレンチゲート電極は、半導体基板を平面視したときに、第1半導体層とゲート絶縁膜を介して対向する第1部分と、第2半導体層とゲート絶縁膜を介して対向する第2部分を有しており、ボディ層のうちトレンチゲート電極の第1部分と対向する部位にチャネル部が形成され、
半導体基板は、半導体基板を平面視したときに、放熱部材に覆われている第1領域と、放熱部材に覆われていない第2領域と、に区分され、
トレンチゲート電極の密度は、第1領域と第2領域とで同一となり、
第1領域に形成されるチャネル部の実効キャリア量を第1領域の面積で除した値は、第2領域に形成されるチャネル部の実効キャリア量を第2領域の面積で除した値より大きい、半導体装置。 - 第1領域内の第1半導体層の第1導電型の不純物濃度は、第2領域内の第1半導体層の第1導電型の不純物濃度と同一となり、
半導体基板を平面視したときに、第1領域に形成されるチャネル部の面積を第1領域の面積で除した値は、第2領域に形成されるチャネル部の面積を第2領域の面積で除した値より大きい、請求項1に記載の半導体装置。 - 半導体基板は、メイン部と、メイン部に流れる電流を検知するためのセンス部と、を有しており、
メイン部とセンス部のそれぞれには、前記ドリフト層と前記ボディ層と前記第1半導体層と前記第2半導体層と前記トレンチゲート電極が形成されており、
第2領域にセンス部が配置されている、請求項2に記載の半導体装置。 - 第1領域内における第1半導体層の第1導電型の不純物濃度が、第2領域内における第1半導体層の第1導電型の不純物濃度より大きい、請求項1に記載の半導体装置。
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JP2013109360A JP5884772B2 (ja) | 2013-05-23 | 2013-05-23 | 半導体装置 |
US14/261,970 US9006839B2 (en) | 2013-05-23 | 2014-04-25 | Semiconductor device |
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JP2013109360A JP5884772B2 (ja) | 2013-05-23 | 2013-05-23 | 半導体装置 |
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JP2014229798A true JP2014229798A (ja) | 2014-12-08 |
JP5884772B2 JP5884772B2 (ja) | 2016-03-15 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10566448B2 (en) | 2017-12-12 | 2020-02-18 | Fuji Electric Co., Ltd. | Insulated gate bipolar transistor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09246549A (ja) * | 1996-03-14 | 1997-09-19 | Toshiba Corp | 電力用半導体素子 |
JP2007110002A (ja) * | 2005-10-17 | 2007-04-26 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
WO2013046578A1 (ja) * | 2011-09-27 | 2013-04-04 | 株式会社デンソー | 半導体装置 |
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JP4623956B2 (ja) * | 2003-11-12 | 2011-02-02 | 株式会社豊田中央研究所 | Igbt |
US8461648B2 (en) * | 2005-07-27 | 2013-06-11 | Infineon Technologies Austria Ag | Semiconductor component with a drift region and a drift control region |
JP4600576B2 (ja) * | 2008-05-08 | 2010-12-15 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP2009289791A (ja) * | 2008-05-27 | 2009-12-10 | Nec Electronics Corp | 半導体装置 |
JP5384913B2 (ja) * | 2008-11-18 | 2014-01-08 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US8507352B2 (en) * | 2008-12-10 | 2013-08-13 | Denso Corporation | Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode |
JP2013115223A (ja) | 2011-11-29 | 2013-06-10 | Toyota Motor Corp | 半導体装置 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09246549A (ja) * | 1996-03-14 | 1997-09-19 | Toshiba Corp | 電力用半導体素子 |
JP2007110002A (ja) * | 2005-10-17 | 2007-04-26 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
WO2013046578A1 (ja) * | 2011-09-27 | 2013-04-04 | 株式会社デンソー | 半導体装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10566448B2 (en) | 2017-12-12 | 2020-02-18 | Fuji Electric Co., Ltd. | Insulated gate bipolar transistor |
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JP5884772B2 (ja) | 2016-03-15 |
US20140346561A1 (en) | 2014-11-27 |
US9006839B2 (en) | 2015-04-14 |
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