JP2017079289A - 縦型熱処理装置 - Google Patents
縦型熱処理装置 Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 230000002093 peripheral effect Effects 0.000 claims abstract description 33
- 230000007246 mechanism Effects 0.000 claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims description 67
- 238000012545 processing Methods 0.000 claims description 66
- 238000012423 maintenance Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 19
- 235000012431 wafers Nutrition 0.000 description 144
- 239000007789 gas Substances 0.000 description 85
- 238000012360 testing method Methods 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- -1 respectively Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Abstract
【解決手段】支柱23と、当該支柱23に沿って複数設けられ、各々基板Wを保持する基板保持部24と、当該支柱23に基板Wごとに設けられ、基板Wよりも外側にその周縁部が張り出すように形成した気流ガイド部と、を備えた基板保持具2と、基板保持具2を縦軸のまわりに回転させる回転機構と、複数の基板Wが保持されている基板保持領域の後方側及び前方側に夫々設けた、処理ガス供給口43及び排気口51と、基板保持領域の左右にて、互いに隣接する気流ガイド部の間の空間に向かって外側から内側に突出して当該空間に臨むように、基板保持具に対して独立して設けた整流部62と、を備えるように装置を構成する。このような構成によって、基板Wの外周への処理ガスの流れを抑える。
【選択図】図3
Description
支柱と、前記支柱に沿って複数設けられ、各々基板を保持する基板保持部と、前記支柱に基板ごとに設けられ、基板よりも外側にその周縁部が張り出すように形成された気流ガイド部と、を備えた基板保持具と、
前記基板保持具を支持して前記反応容器の下方から搬入するための昇降台と、
前記昇降台に設けられ、前記基板保持具を縦軸の周りに回転させるための回転機構と、
前記複数の基板が保持されている基板保持領域の後方側及び前方側に夫々設けられた、処理ガス供給口及び排気口と、
前記基板保持領域の左右にて、互いに隣接する気流ガイド部の間の空間に向かって外側から内側に突出して当該空間に臨むように、前記基板保持具に対して独立して設けられた整流部と、を備えたことを特徴とする。
本発明の実施の形態に係る縦型熱処理装置1について、縦断側面図である図1及び図2と、横断平面図である図3とを参照して説明する。縦型熱処理装置1は、CVD(Chemical Vapor Deposition)により円形の基板であるウエハWにSiO2(酸化シリコン)膜を成膜する。図中11は例えば石英製の反応容器であり、縦型の有天井の円筒形に構成されており、その下端部は外方へと広がりフランジ12を形成している。ところで図1〜図3について補足しておくと、図1、図2は反応容器11の周方向の互いに異なる位置における縦断側面を示しており、図1は図3のA−A矢視断面図、図2は図3のB−B矢視断面図である。
第1の実施形態の変形例に係る縦型熱処理装置6について、図7の横断平面図を参照して、縦型熱処理装置1との差異点を中心に説明する。この縦型熱処理装置6では整流板62の代りに、リング板24の半周に沿った平面視円弧状の整流板63が設けられており、円弧の一端、他端は反応容器11内の左右の一方、他方に夫々設けられ、円弧の長さ方向の中央部は反応容器11内の前方側に設けられている。つまり、整流板63は、平面で見て整流板62よりも長い円弧状に形成されている。このような形状の違いを除いて、整流板63は整流板62と同様に構成されている。整流板63は、例えば反応容器11の周方向に間隔をおいて設けられる棒状の垂直な支柱64によって支持されている。この支柱64は、平面で見た形状が異なることを除いて、上記の支柱61と同様に構成されている。
続いて第2の実施形態に係る縦型熱処理装置7について、縦型熱処理装置1との差異点を中心に、図8の横断平面図及び図9の縦断側面図を参照して説明する。縦型熱処理装置7においては、拡張領域31、33及び支柱61及び整流板62が設けられておらず、その代わりに整流板62に相当する整流板71が設けられている。整流板71についても整流板62と同様に多段に設けられており、各整流板71は、反応容器11の内周壁の周方向における互いに離れた4つの領域から、処理位置に配置されたウエハボート2の隣接するリング板24間の隙間に臨むように、当該隙間に向かって突出している。この例では、整流板71は、反応容器11内における前方側の左右及び後方側の左右に夫々設けられている。
評価試験1として、既述の縦型熱処理装置1を用いて直径が300mmのウエハWに成膜処理を行うシミュレーションを実行した。そしてこの成膜処理中の隣接するウエハ間の隙間における処理ガスの流速の分布を取得した。また、比較試験1として、整流板62、支柱61、拡張領域31、32が形成されていないことを除いて評価試験1と同じ条件のシミュレーションを実行し、評価試験1と同様に処理ガスの流速の分布を取得した。
1 縦型熱処理装置
11 反応容器
14 蓋体
16 モータ
2 ウエハボート
23 支柱
24 リング板
31〜33 拡張領域
61 支柱
62 整流板
Claims (7)
- 加熱部により囲まれた縦型の反応容器内にて、棚状に配置された複数の基板に対して、一方から他方に向けて横方向に流れる処理ガスの気流を形成して処理を行う縦型熱処理装置において、
支柱と、前記支柱に沿って複数設けられ、各々基板を保持する基板保持部と、前記支柱に基板ごとに設けられ、基板よりも外側にその周縁部が張り出すように形成された気流ガイド部と、を備えた基板保持具と、
前記基板保持具を支持して前記反応容器の下方から搬入するための昇降台と、
前記昇降台に設けられ、前記基板保持具を縦軸の周りに回転させるための回転機構と、
前記複数の基板が保持されている基板保持領域の後方側及び前方側に夫々設けられた、処理ガス供給口及び排気口と、
前記基板保持領域の左右にて、外側から互いに隣接する気流ガイド部の間の空間に向かって突出して当該空間に臨むように、前記基板保持具に対して独立して設けられた整流部と、を備えたことを特徴とする縦型熱処理装置。 - 前記整流部は、前記昇降台に支持部を介して設けられ、
前記反応容器の側壁部における整流部に対向する部位が外方に膨らんでいることを特徴とする請求項1記載の縦型熱処理装置。 - 前記整流部は、前記反応容器の側壁部に設けられ、
前記基板保持部が昇降するときの向きにおいて、平面で見たときに前記気流ガイド部における前記整流部と対向する部位は、切欠き部が形成されていることを特徴とする請求項1記載の縦型熱処理装置。 - 前記整流部は、平面で見たときに前記気流ガイド部と重なっていることを特徴とする請求項1ないし3のいずれか一項に記載の縦型熱処理装置。
- 前記気流ガイド部は、前記基板保持部の周縁部位に相当することを特徴とする1ないし4のいずれか一項に記載の縦型熱処理装置。
- 前記基板保持部は、基板保持具の周方向に沿って環状に形成された環状部材であることを特徴とする請求項5記載の縦型熱処理装置。
- 前記基板保持部は、前記気流形成部材とは別個に前記支柱に設けられていることを特徴とする請求項1ないし6のいずれか一項に記載の縦型熱処理装置。
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JP2015207357A JP6464990B2 (ja) | 2015-10-21 | 2015-10-21 | 縦型熱処理装置 |
KR1020160131300A KR102015693B1 (ko) | 2015-10-21 | 2016-10-11 | 종형 열처리 장치 |
US15/295,183 US20170114464A1 (en) | 2015-10-21 | 2016-10-17 | Vertical heat treatment apparatus |
CN201610917830.XA CN107017181B (zh) | 2015-10-21 | 2016-10-20 | 立式热处理装置 |
US16/661,335 US11282721B2 (en) | 2015-10-21 | 2019-10-23 | Vertical heat treatment apparatus |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019004096A (ja) * | 2017-06-19 | 2019-01-10 | 東京エレクトロン株式会社 | 基板保持具及びこれを用いた基板処理装置 |
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WO2020059093A1 (ja) * | 2018-09-20 | 2020-03-26 | 株式会社Kokusai Electric | 基板処理装置 |
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US20170114464A1 (en) | 2017-04-27 |
US11282721B2 (en) | 2022-03-22 |
CN107017181A (zh) | 2017-08-04 |
KR102015693B1 (ko) | 2019-08-28 |
KR20170046577A (ko) | 2017-05-02 |
CN107017181B (zh) | 2021-02-12 |
JP6464990B2 (ja) | 2019-02-06 |
US20200058526A1 (en) | 2020-02-20 |
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