JP2016531319A5 - - Google Patents

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Publication number
JP2016531319A5
JP2016531319A5 JP2016532276A JP2016532276A JP2016531319A5 JP 2016531319 A5 JP2016531319 A5 JP 2016531319A5 JP 2016532276 A JP2016532276 A JP 2016532276A JP 2016532276 A JP2016532276 A JP 2016532276A JP 2016531319 A5 JP2016531319 A5 JP 2016531319A5
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JP
Japan
Prior art keywords
mirror
layer
layers
nitride
group iii
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JP2016532276A
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English (en)
Japanese (ja)
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JP2016531319A (ja
JP6560670B2 (ja
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Priority claimed from DE102013215541.7A external-priority patent/DE102013215541A1/de
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Publication of JP2016531319A5 publication Critical patent/JP2016531319A5/ja
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Publication of JP6560670B2 publication Critical patent/JP6560670B2/ja
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JP2016532276A 2013-08-07 2014-06-25 特にマイクロリソグラフィ投影露光装置のミラー Active JP6560670B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013215541.7 2013-08-07
DE102013215541.7A DE102013215541A1 (de) 2013-08-07 2013-08-07 Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
PCT/EP2014/063349 WO2015018560A2 (de) 2013-08-07 2014-06-25 Spiegel, insbesondere für eine mikrolithographische projektionsbelichtungsanlage

Publications (3)

Publication Number Publication Date
JP2016531319A JP2016531319A (ja) 2016-10-06
JP2016531319A5 true JP2016531319A5 (https=) 2017-08-03
JP6560670B2 JP6560670B2 (ja) 2019-08-14

Family

ID=51178880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016532276A Active JP6560670B2 (ja) 2013-08-07 2014-06-25 特にマイクロリソグラフィ投影露光装置のミラー

Country Status (7)

Country Link
US (1) US10310382B2 (https=)
EP (1) EP3030936B1 (https=)
JP (1) JP6560670B2 (https=)
KR (1) KR102265041B1 (https=)
CN (1) CN105518532B (https=)
DE (1) DE102013215541A1 (https=)
WO (1) WO2015018560A2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015213253A1 (de) * 2015-07-15 2017-01-19 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
EP3429825B1 (en) * 2016-05-12 2021-03-03 Hewlett-Packard Development Company, L.P. Temperature correction via print agent application
DE102016213831A1 (de) * 2016-07-27 2018-02-01 Carl Zeiss Smt Gmbh Reflektives optisches Element für die EUV-Lithographie
DE102016224113A1 (de) * 2016-12-05 2018-06-07 Carl Zeiss Smt Gmbh Intensitätsanpassungsfilter für die euv - mikrolithographie und verfahren zur herstellung desselben sowie beleuchtungssystem mit einem entsprechenden filter
DE102018211499A1 (de) 2018-07-11 2020-01-16 Carl Zeiss Smt Gmbh Reflektives optisches Element und Verfahren zum Herstellen eines reflektiven optischen Elements

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DE102004002757A1 (de) * 2004-01-20 2005-08-11 U-L-M Photonics Gmbh Aluminiumhaltiger Verbundhalbleiter und Verfahren zur Herstellung eines aluminiumhaltigen Verbundhalbleiters
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DE102009040785A1 (de) 2009-09-09 2011-03-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat aus einer Aluminium-Silizium-Legierung oder kristallinem Silizium, Metallspiegel, Verfahren zu dessen Herstellung sowie dessen Verwendung
JP2011108942A (ja) * 2009-11-19 2011-06-02 Renesas Electronics Corp 反射型露光用マスク、反射型露光用マスクの製造方法、および、半導体装置の製造方法
DE102011079933A1 (de) * 2010-08-19 2012-02-23 Carl Zeiss Smt Gmbh Optisches Element für die UV- oder EUV-Lithographie
US20140024082A1 (en) * 2010-08-20 2014-01-23 Zuchem Inc Activated Sugars
DE102010039927A1 (de) 2010-08-30 2012-03-01 Carl Zeiss Smt Gmbh Substrat für Spiegel für die EUV-Lithographie
DE102011002953A1 (de) * 2011-01-21 2012-07-26 Carl Zeiss Smt Gmbh Substrat für Spiegel für die EUV-Lithographie
CN103380401B (zh) * 2011-02-24 2016-02-03 Asml荷兰有限公司 掠入射反射器、光刻设备、掠入射反射器制造方法及器件制造方法
JP6093753B2 (ja) * 2011-03-23 2017-03-08 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖミラー機構、ｅｕｖミラー機構を備えた光学系、及びｅｕｖミラー機構を備えた光学系を操作する方法
JP2012222349A (ja) * 2011-04-05 2012-11-12 Asml Netherlands Bv 多層ミラーおよびリソグラフィ装置
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