KR102265041B1 - 특히, 마이크로리소그래픽 투영 노광 장치를 위한 거울 - Google Patents

특히, 마이크로리소그래픽 투영 노광 장치를 위한 거울 Download PDF

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KR102265041B1
KR102265041B1 KR1020167003166A KR20167003166A KR102265041B1 KR 102265041 B1 KR102265041 B1 KR 102265041B1 KR 1020167003166 A KR1020167003166 A KR 1020167003166A KR 20167003166 A KR20167003166 A KR 20167003166A KR 102265041 B1 KR102265041 B1 KR 102265041B1
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South Korea
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mirror
layer
gallium nitride
nitride
mirror substrate
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Korean (ko)
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KR20160040560A (ko
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마르틴 헤어만
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칼 짜이스 에스엠테 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Lenses (AREA)
KR1020167003166A 2013-08-07 2014-06-25 특히, 마이크로리소그래픽 투영 노광 장치를 위한 거울 Active KR102265041B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013215541.7 2013-08-07
DE102013215541.7A DE102013215541A1 (de) 2013-08-07 2013-08-07 Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
PCT/EP2014/063349 WO2015018560A2 (de) 2013-08-07 2014-06-25 Spiegel, insbesondere für eine mikrolithographische projektionsbelichtungsanlage

Publications (2)

Publication Number Publication Date
KR20160040560A KR20160040560A (ko) 2016-04-14
KR102265041B1 true KR102265041B1 (ko) 2021-06-16

Family

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KR1020167003166A Active KR102265041B1 (ko) 2013-08-07 2014-06-25 특히, 마이크로리소그래픽 투영 노광 장치를 위한 거울

Country Status (7)

Country Link
US (1) US10310382B2 (https=)
EP (1) EP3030936B1 (https=)
JP (1) JP6560670B2 (https=)
KR (1) KR102265041B1 (https=)
CN (1) CN105518532B (https=)
DE (1) DE102013215541A1 (https=)
WO (1) WO2015018560A2 (https=)

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DE102015213253A1 (de) * 2015-07-15 2017-01-19 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
EP3429825B1 (en) * 2016-05-12 2021-03-03 Hewlett-Packard Development Company, L.P. Temperature correction via print agent application
DE102016213831A1 (de) * 2016-07-27 2018-02-01 Carl Zeiss Smt Gmbh Reflektives optisches Element für die EUV-Lithographie
DE102016224113A1 (de) * 2016-12-05 2018-06-07 Carl Zeiss Smt Gmbh Intensitätsanpassungsfilter für die euv - mikrolithographie und verfahren zur herstellung desselben sowie beleuchtungssystem mit einem entsprechenden filter
DE102018211499A1 (de) 2018-07-11 2020-01-16 Carl Zeiss Smt Gmbh Reflektives optisches Element und Verfahren zum Herstellen eines reflektiven optischen Elements

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JP2007273678A (ja) 2006-03-31 2007-10-18 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
US20080043321A1 (en) * 2006-08-16 2008-02-21 Cymer, Inc. EUV optics
JP2012069925A (ja) * 2010-08-19 2012-04-05 Carl Zeiss Smt Gmbh Ｕｖ又はｅｕｖリソグラフィ用の光学素子

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050199830A1 (en) 2004-03-10 2005-09-15 Bowering Norbert R. EUV light source optical elements
JP2007273678A (ja) 2006-03-31 2007-10-18 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
US20080043321A1 (en) * 2006-08-16 2008-02-21 Cymer, Inc. EUV optics
JP2012069925A (ja) * 2010-08-19 2012-04-05 Carl Zeiss Smt Gmbh Ｕｖ又はｅｕｖリソグラフィ用の光学素子

Also Published As

Publication number Publication date
EP3030936B1 (de) 2019-02-27
JP2016531319A (ja) 2016-10-06
JP6560670B2 (ja) 2019-08-14
US10310382B2 (en) 2019-06-04
WO2015018560A3 (de) 2015-04-09
WO2015018560A2 (de) 2015-02-12
KR20160040560A (ko) 2016-04-14
CN105518532A (zh) 2016-04-20
DE102013215541A1 (de) 2015-02-12
US20160154317A1 (en) 2016-06-02
CN105518532B (zh) 2018-10-09
EP3030936A2 (de) 2016-06-15

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