JP2012500481A5 - - Google Patents
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- Publication number
- JP2012500481A5 JP2012500481A5 JP2011523327A JP2011523327A JP2012500481A5 JP 2012500481 A5 JP2012500481 A5 JP 2012500481A5 JP 2011523327 A JP2011523327 A JP 2011523327A JP 2011523327 A JP2011523327 A JP 2011523327A JP 2012500481 A5 JP2012500481 A5 JP 2012500481A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- conductive
- reticle
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 claims 19
- 239000000758 substrate Substances 0.000 claims 18
- 239000004020 conductor Substances 0.000 claims 5
- 239000000463 material Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 229910052878 cordierite Inorganic materials 0.000 claims 2
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 230000005855 radiation Effects 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- 238000005286 illumination Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9083808P | 2008-08-21 | 2008-08-21 | |
| US61/090,838 | 2008-08-21 | ||
| PCT/EP2009/005490 WO2010020337A1 (en) | 2008-08-21 | 2009-07-29 | Euv reticle substrates with high thermal conductivity |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012500481A JP2012500481A (ja) | 2012-01-05 |
| JP2012500481A5 true JP2012500481A5 (https=) | 2012-09-13 |
| JP5449358B2 JP5449358B2 (ja) | 2014-03-19 |
Family
ID=41114883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011523327A Expired - Fee Related JP5449358B2 (ja) | 2008-08-21 | 2009-07-29 | レチクル、リソグラフィ装置、およびレチクルを生成する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8736810B2 (https=) |
| JP (1) | JP5449358B2 (https=) |
| KR (1) | KR101670318B1 (https=) |
| CN (1) | CN102132209B (https=) |
| NL (1) | NL2003305A (https=) |
| TW (1) | TWI434132B (https=) |
| WO (1) | WO2010020337A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011222958A (ja) * | 2010-03-25 | 2011-11-04 | Komatsu Ltd | ミラーおよび極端紫外光生成装置 |
| JPWO2012114980A1 (ja) * | 2011-02-24 | 2014-07-07 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク |
| JP5742389B2 (ja) * | 2011-03-31 | 2015-07-01 | 凸版印刷株式会社 | Ｅｕｖ露光用マスクの修正方法およびｅｕｖ露光用マスク |
| DE102011080052A1 (de) | 2011-07-28 | 2013-01-31 | Carl Zeiss Smt Gmbh | Spiegel, optisches System mit Spiegel und Verfahren zur Herstellung eines Spiegels |
| DE102011086513A1 (de) | 2011-11-16 | 2013-05-16 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithographie |
| DE102012213794A1 (de) | 2012-08-03 | 2014-02-06 | Carl Zeiss Smt Gmbh | Maskeninspektionsverfahren und Maskeninspektionssystem für EUV-Masken |
| US9354508B2 (en) * | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
| JP2015018918A (ja) * | 2013-07-10 | 2015-01-29 | キヤノン株式会社 | 反射型原版、露光方法及びデバイス製造方法 |
| JP6303346B2 (ja) * | 2013-09-09 | 2018-04-04 | 凸版印刷株式会社 | 反射型マスクブランクおよび反射型マスク |
| TWI463251B (zh) * | 2013-10-17 | 2014-12-01 | hui ying Lin | 具環境資訊感測之光罩結構 |
| US9411222B2 (en) | 2014-04-02 | 2016-08-09 | Zygo Corporation | Photo-masks for lithography |
| KR102246875B1 (ko) | 2014-11-13 | 2021-04-30 | 삼성전자 주식회사 | 그라파이트 층을 갖는 펠리클을 제조하는 방법 |
| KR102254103B1 (ko) * | 2015-01-07 | 2021-05-20 | 삼성전자주식회사 | 지지 층을 이용한 펠리클 제조 방법 |
| KR20160101588A (ko) * | 2015-02-17 | 2016-08-25 | 에스케이하이닉스 주식회사 | 열팽창에 의한 오버레이 패턴 변형을 억제하는 포토마스크 블랭크 및 포토마스크와, 포토마스크 블랭크를 이용한 포토마스크 제조방법 |
| KR102614222B1 (ko) * | 2015-03-12 | 2023-12-18 | 레이브 엘엘씨 | 간접 표면 세정장치 및 방법 |
| WO2017060259A1 (en) * | 2015-10-06 | 2017-04-13 | Asml Holding N.V. | Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus |
| US11448955B2 (en) * | 2018-09-27 | 2022-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mask for lithography process and method for manufacturing the same |
| KR102848805B1 (ko) | 2019-07-31 | 2025-08-22 | 삼성전자주식회사 | Euv 레티클 검사 방법, 레티클 제조 방법 및 그를 포함하는 반도체 소자의 제조 방법 |
| KR20250112308A (ko) | 2020-01-27 | 2025-07-23 | 헤레우스 코반틱스 노스 아메리카 엘엘씨 | 반도체 응용을 위한 고순도 코디어라이트 재료 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01175734A (ja) | 1987-12-29 | 1989-07-12 | Canon Inc | 反射型マスク及びその製造方法 |
| DE3856054T2 (de) | 1987-02-18 | 1998-03-19 | Canon K.K., Tokio/Tokyo | Reflexionsmaske |
| JPH0868898A (ja) | 1994-08-29 | 1996-03-12 | Nikon Corp | 反射鏡およびその製造方法 |
| US6159643A (en) * | 1999-03-01 | 2000-12-12 | Advanced Micro Devices, Inc. | Extreme ultraviolet lithography reflective mask |
| WO2000075727A2 (en) * | 1999-06-07 | 2000-12-14 | The Regents Of The University Of California | Coatings on reflective mask substrates |
| US6806006B2 (en) | 2002-07-15 | 2004-10-19 | International Business Machines Corporation | Integrated cooling substrate for extreme ultraviolet reticle |
| US7129010B2 (en) | 2002-08-02 | 2006-10-31 | Schott Ag | Substrates for in particular microlithography |
| US7105836B2 (en) | 2002-10-18 | 2006-09-12 | Asml Holding N.V. | Method and apparatus for cooling a reticle during lithographic exposure |
| TWI254841B (en) | 2002-12-23 | 2006-05-11 | Asml Netherlands Bv | Lithographic apparatus |
| DE10302342A1 (de) * | 2003-01-17 | 2004-08-05 | Schott Glas | Substrat für die EUV-Mikrolithographie und Herstellverfahren hierfür |
| DE10317792A1 (de) | 2003-04-16 | 2004-11-11 | Schott Glas | Maskenrohling zur Verwendung in der EUV-Lithographie und Verfahren zu dessen Herstellung |
| US8105457B2 (en) | 2003-12-22 | 2012-01-31 | Asml Netherlands B.V. | Method for joining at least a first member and a second member, lithographic apparatus and device manufacturing method, as well as a device manufactured thereby |
| US7193228B2 (en) * | 2004-03-10 | 2007-03-20 | Cymer, Inc. | EUV light source optical elements |
| JP2005268359A (ja) | 2004-03-17 | 2005-09-29 | Nikon Corp | ミラー及び照明光学装置 |
| US7781047B2 (en) | 2004-10-21 | 2010-08-24 | Eastman Kodak Company | Polymeric conductor donor and transfer method |
| DE602005011393D1 (de) | 2004-12-22 | 2009-01-15 | Rohm & Haas Elect Mat | Optische Trockenfilme und Verfahren zur Herstellung optischer Vorrichtungen mit Trockenfilmen |
| JP2006177740A (ja) * | 2004-12-22 | 2006-07-06 | Nikon Corp | 多層膜反射鏡及びｅｕｖ露光装置 |
| DE602005010378D1 (de) | 2004-12-22 | 2008-11-27 | Rohm & Haas Elect Mat | Verfahren zur Herstellung optischer Vorrichtungen mit Polymerschichten |
| JP2006178466A (ja) | 2004-12-22 | 2006-07-06 | Rohm & Haas Electronic Materials Llc | 光学乾燥フィルム及び乾燥フィルムを有する光学デバイス形成方法 |
| DE102005027697A1 (de) | 2005-06-15 | 2006-12-28 | Infineon Technologies Ag | EUV-Reflexionsmaske und Verfahren zu deren Herstellung |
| US20070097346A1 (en) * | 2005-10-28 | 2007-05-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20070170379A1 (en) | 2006-01-24 | 2007-07-26 | Nikon Corporation | Cooled optical filters and optical systems comprising same |
| JP4737426B2 (ja) | 2006-04-21 | 2011-08-03 | 信越化学工業株式会社 | フォトマスクブランク |
| US7223515B1 (en) | 2006-05-30 | 2007-05-29 | 3M Innovative Properties Company | Thermal mass transfer substrate films, donor elements, and methods of making and using same |
| JP5053696B2 (ja) * | 2007-04-26 | 2012-10-17 | 信越化学工業株式会社 | 静電チャック |
-
2009
- 2009-07-29 CN CN200980132629.9A patent/CN102132209B/zh not_active Expired - Fee Related
- 2009-07-29 KR KR1020117006507A patent/KR101670318B1/ko not_active Expired - Fee Related
- 2009-07-29 US US13/054,008 patent/US8736810B2/en not_active Expired - Fee Related
- 2009-07-29 WO PCT/EP2009/005490 patent/WO2010020337A1/en not_active Ceased
- 2009-07-29 JP JP2011523327A patent/JP5449358B2/ja not_active Expired - Fee Related
- 2009-07-29 NL NL2003305A patent/NL2003305A/en not_active Application Discontinuation
- 2009-08-11 TW TW098127002A patent/TWI434132B/zh not_active IP Right Cessation
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