TWI434132B - 具有高熱傳導性之極紫外線主光罩基板 - Google Patents

具有高熱傳導性之極紫外線主光罩基板 Download PDF

Info

Publication number
TWI434132B
TWI434132B TW098127002A TW98127002A TWI434132B TW I434132 B TWI434132 B TW I434132B TW 098127002 A TW098127002 A TW 098127002A TW 98127002 A TW98127002 A TW 98127002A TW I434132 B TWI434132 B TW I434132B
Authority
TW
Taiwan
Prior art keywords
layer
substrate
reticle
optical
conductive layer
Prior art date
Application number
TW098127002A
Other languages
English (en)
Chinese (zh)
Other versions
TW201013304A (en
Inventor
羅那德Ａ 維克洛
邁可Ｌ 尼爾森
麥可 裴瑞
Original Assignee
Asml控股公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml控股公司 filed Critical Asml控股公司
Publication of TW201013304A publication Critical patent/TW201013304A/zh
Application granted granted Critical
Publication of TWI434132B publication Critical patent/TWI434132B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW098127002A 2008-08-21 2009-08-11 具有高熱傳導性之極紫外線主光罩基板 TWI434132B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9083808P 2008-08-21 2008-08-21

Publications (2)

Publication Number Publication Date
TW201013304A TW201013304A (en) 2010-04-01
TWI434132B true TWI434132B (zh) 2014-04-11

Family

ID=41114883

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098127002A TWI434132B (zh) 2008-08-21 2009-08-11 具有高熱傳導性之極紫外線主光罩基板

Country Status (7)

Country Link
US (1) US8736810B2 (https=)
JP (1) JP5449358B2 (https=)
KR (1) KR101670318B1 (https=)
CN (1) CN102132209B (https=)
NL (1) NL2003305A (https=)
TW (1) TWI434132B (https=)
WO (1) WO2010020337A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI724751B (zh) * 2015-03-12 2021-04-11 美商瑞弗股份有限公司 用於改良光罩之光學性能及其特性之方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011222958A (ja) * 2010-03-25 2011-11-04 Komatsu Ltd ミラーおよび極端紫外光生成装置
JPWO2012114980A1 (ja) * 2011-02-24 2014-07-07 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5742389B2 (ja) * 2011-03-31 2015-07-01 凸版印刷株式会社 Ｅｕｖ露光用マスクの修正方法およびｅｕｖ露光用マスク
DE102011080052A1 (de) 2011-07-28 2013-01-31 Carl Zeiss Smt Gmbh Spiegel, optisches System mit Spiegel und Verfahren zur Herstellung eines Spiegels
DE102011086513A1 (de) 2011-11-16 2013-05-16 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithographie
DE102012213794A1 (de) 2012-08-03 2014-02-06 Carl Zeiss Smt Gmbh Maskeninspektionsverfahren und Maskeninspektionssystem für EUV-Masken
US9354508B2 (en) * 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
JP2015018918A (ja) * 2013-07-10 2015-01-29 キヤノン株式会社 反射型原版、露光方法及びデバイス製造方法
JP6303346B2 (ja) * 2013-09-09 2018-04-04 凸版印刷株式会社 反射型マスクブランクおよび反射型マスク
TWI463251B (zh) * 2013-10-17 2014-12-01 hui ying Lin 具環境資訊感測之光罩結構
US9411222B2 (en) 2014-04-02 2016-08-09 Zygo Corporation Photo-masks for lithography
KR102246875B1 (ko) 2014-11-13 2021-04-30 삼성전자 주식회사 그라파이트 층을 갖는 펠리클을 제조하는 방법
KR102254103B1 (ko) * 2015-01-07 2021-05-20 삼성전자주식회사 지지 층을 이용한 펠리클 제조 방법
KR20160101588A (ko) * 2015-02-17 2016-08-25 에스케이하이닉스 주식회사 열팽창에 의한 오버레이 패턴 변형을 억제하는 포토마스크 블랭크 및 포토마스크와, 포토마스크 블랭크를 이용한 포토마스크 제조방법
WO2017060259A1 (en) * 2015-10-06 2017-04-13 Asml Holding N.V. Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus
US11448955B2 (en) * 2018-09-27 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Mask for lithography process and method for manufacturing the same
KR102848805B1 (ko) 2019-07-31 2025-08-22 삼성전자주식회사 Euv 레티클 검사 방법, 레티클 제조 방법 및 그를 포함하는 반도체 소자의 제조 방법
KR20250112308A (ko) 2020-01-27 2025-07-23 헤레우스 코반틱스 노스 아메리카 엘엘씨 반도체 응용을 위한 고순도 코디어라이트 재료

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01175734A (ja) 1987-12-29 1989-07-12 Canon Inc 反射型マスク及びその製造方法
DE3856054T2 (de) 1987-02-18 1998-03-19 Canon K.K., Tokio/Tokyo Reflexionsmaske
JPH0868898A (ja) 1994-08-29 1996-03-12 Nikon Corp 反射鏡およびその製造方法
US6159643A (en) * 1999-03-01 2000-12-12 Advanced Micro Devices, Inc. Extreme ultraviolet lithography reflective mask
WO2000075727A2 (en) * 1999-06-07 2000-12-14 The Regents Of The University Of California Coatings on reflective mask substrates
US6806006B2 (en) 2002-07-15 2004-10-19 International Business Machines Corporation Integrated cooling substrate for extreme ultraviolet reticle
US7129010B2 (en) 2002-08-02 2006-10-31 Schott Ag Substrates for in particular microlithography
US7105836B2 (en) 2002-10-18 2006-09-12 Asml Holding N.V. Method and apparatus for cooling a reticle during lithographic exposure
TWI254841B (en) 2002-12-23 2006-05-11 Asml Netherlands Bv Lithographic apparatus
DE10302342A1 (de) * 2003-01-17 2004-08-05 Schott Glas Substrat für die EUV-Mikrolithographie und Herstellverfahren hierfür
DE10317792A1 (de) 2003-04-16 2004-11-11 Schott Glas Maskenrohling zur Verwendung in der EUV-Lithographie und Verfahren zu dessen Herstellung
US8105457B2 (en) 2003-12-22 2012-01-31 Asml Netherlands B.V. Method for joining at least a first member and a second member, lithographic apparatus and device manufacturing method, as well as a device manufactured thereby
US7193228B2 (en) * 2004-03-10 2007-03-20 Cymer, Inc. EUV light source optical elements
JP2005268359A (ja) 2004-03-17 2005-09-29 Nikon Corp ミラー及び照明光学装置
US7781047B2 (en) 2004-10-21 2010-08-24 Eastman Kodak Company Polymeric conductor donor and transfer method
DE602005011393D1 (de) 2004-12-22 2009-01-15 Rohm & Haas Elect Mat Optische Trockenfilme und Verfahren zur Herstellung optischer Vorrichtungen mit Trockenfilmen
JP2006177740A (ja) * 2004-12-22 2006-07-06 Nikon Corp 多層膜反射鏡及びｅｕｖ露光装置
DE602005010378D1 (de) 2004-12-22 2008-11-27 Rohm & Haas Elect Mat Verfahren zur Herstellung optischer Vorrichtungen mit Polymerschichten
JP2006178466A (ja) 2004-12-22 2006-07-06 Rohm & Haas Electronic Materials Llc 光学乾燥フィルム及び乾燥フィルムを有する光学デバイス形成方法
DE102005027697A1 (de) 2005-06-15 2006-12-28 Infineon Technologies Ag EUV-Reflexionsmaske und Verfahren zu deren Herstellung
US20070097346A1 (en) * 2005-10-28 2007-05-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070170379A1 (en) 2006-01-24 2007-07-26 Nikon Corporation Cooled optical filters and optical systems comprising same
JP4737426B2 (ja) 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
US7223515B1 (en) 2006-05-30 2007-05-29 3M Innovative Properties Company Thermal mass transfer substrate films, donor elements, and methods of making and using same
JP5053696B2 (ja) * 2007-04-26 2012-10-17 信越化学工業株式会社 静電チャック

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI724751B (zh) * 2015-03-12 2021-04-11 美商瑞弗股份有限公司 用於改良光罩之光學性能及其特性之方法

Also Published As

Publication number Publication date
JP5449358B2 (ja) 2014-03-19
KR101670318B1 (ko) 2016-10-28
WO2010020337A1 (en) 2010-02-25
KR20110046545A (ko) 2011-05-04
CN102132209A (zh) 2011-07-20
NL2003305A (en) 2010-03-10
TW201013304A (en) 2010-04-01
JP2012500481A (ja) 2012-01-05
CN102132209B (zh) 2014-07-16
US8736810B2 (en) 2014-05-27
US20110116068A1 (en) 2011-05-19

Similar Documents

Publication Publication Date Title
TWI434132B (zh) 具有高熱傳導性之極紫外線主光罩基板
JP7369753B2 (ja) リソグラフィ装置のオブジェクトを保持するためのチャック及びクランプ、並びにリソグラフィ装置のクランプによって保持されるオブジェクトの温度を制御する方法
US10310391B2 (en) Electrostatic clamp and a method for manufacturing the same
US8102511B2 (en) Lithographic apparatus with enhanced spectral purity, device manufacturing method and device manufactured thereby
JP4202996B2 (ja) リトグラフ装置、および、デバイスの製造方法
TW201235798A (en) Lithographic apparatus and device manufacturing method
CN102105837B (zh) 反射镜、光刻设备以及器件制造方法
JP4599334B2 (ja) 物品支持部材を製造する方法
JP2025540371A (ja) クランプおよびその製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees