CN102132209B - 具有高热传导率的euv掩模版基底 - Google Patents

具有高热传导率的euv掩模版基底 Download PDF

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Publication number
CN102132209B
CN102132209B CN200980132629.9A CN200980132629A CN102132209B CN 102132209 B CN102132209 B CN 102132209B CN 200980132629 A CN200980132629 A CN 200980132629A CN 102132209 B CN102132209 B CN 102132209B
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CN
China
Prior art keywords
layer
substrate
conductive layer
reticle
optical layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200980132629.9A
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English (en)
Chinese (zh)
Other versions
CN102132209A (zh
Inventor
R·A·威克洛
M·L·纳尔逊
M·佩里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
Original Assignee
ASML Holding NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV filed Critical ASML Holding NV
Publication of CN102132209A publication Critical patent/CN102132209A/zh
Application granted granted Critical
Publication of CN102132209B publication Critical patent/CN102132209B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN200980132629.9A 2008-08-21 2009-07-29 具有高热传导率的euv掩模版基底 Expired - Fee Related CN102132209B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9083808P 2008-08-21 2008-08-21
US61/090,838 2008-08-21
PCT/EP2009/005490 WO2010020337A1 (en) 2008-08-21 2009-07-29 Euv reticle substrates with high thermal conductivity

Publications (2)

Publication Number Publication Date
CN102132209A CN102132209A (zh) 2011-07-20
CN102132209B true CN102132209B (zh) 2014-07-16

Family

ID=41114883

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980132629.9A Expired - Fee Related CN102132209B (zh) 2008-08-21 2009-07-29 具有高热传导率的euv掩模版基底

Country Status (7)

Country Link
US (1) US8736810B2 (https=)
JP (1) JP5449358B2 (https=)
KR (1) KR101670318B1 (https=)
CN (1) CN102132209B (https=)
NL (1) NL2003305A (https=)
TW (1) TWI434132B (https=)
WO (1) WO2010020337A1 (https=)

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JP2011222958A (ja) * 2010-03-25 2011-11-04 Komatsu Ltd ミラーおよび極端紫外光生成装置
JPWO2012114980A1 (ja) * 2011-02-24 2014-07-07 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5742389B2 (ja) * 2011-03-31 2015-07-01 凸版印刷株式会社 Ｅｕｖ露光用マスクの修正方法およびｅｕｖ露光用マスク
DE102011080052A1 (de) 2011-07-28 2013-01-31 Carl Zeiss Smt Gmbh Spiegel, optisches System mit Spiegel und Verfahren zur Herstellung eines Spiegels
DE102011086513A1 (de) 2011-11-16 2013-05-16 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithographie
DE102012213794A1 (de) 2012-08-03 2014-02-06 Carl Zeiss Smt Gmbh Maskeninspektionsverfahren und Maskeninspektionssystem für EUV-Masken
US9354508B2 (en) * 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
JP2015018918A (ja) * 2013-07-10 2015-01-29 キヤノン株式会社 反射型原版、露光方法及びデバイス製造方法
JP6303346B2 (ja) * 2013-09-09 2018-04-04 凸版印刷株式会社 反射型マスクブランクおよび反射型マスク
TWI463251B (zh) * 2013-10-17 2014-12-01 hui ying Lin 具環境資訊感測之光罩結構
US9411222B2 (en) 2014-04-02 2016-08-09 Zygo Corporation Photo-masks for lithography
KR102246875B1 (ko) 2014-11-13 2021-04-30 삼성전자 주식회사 그라파이트 층을 갖는 펠리클을 제조하는 방법
KR102254103B1 (ko) * 2015-01-07 2021-05-20 삼성전자주식회사 지지 층을 이용한 펠리클 제조 방법
KR20160101588A (ko) * 2015-02-17 2016-08-25 에스케이하이닉스 주식회사 열팽창에 의한 오버레이 패턴 변형을 억제하는 포토마스크 블랭크 및 포토마스크와, 포토마스크 블랭크를 이용한 포토마스크 제조방법
KR102614222B1 (ko) * 2015-03-12 2023-12-18 레이브 엘엘씨 간접 표면 세정장치 및 방법
WO2017060259A1 (en) * 2015-10-06 2017-04-13 Asml Holding N.V. Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus
US11448955B2 (en) * 2018-09-27 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Mask for lithography process and method for manufacturing the same
KR102848805B1 (ko) 2019-07-31 2025-08-22 삼성전자주식회사 Euv 레티클 검사 방법, 레티클 제조 방법 및 그를 포함하는 반도체 소자의 제조 방법
KR20250112308A (ko) 2020-01-27 2025-07-23 헤레우스 코반틱스 노스 아메리카 엘엘씨 반도체 응용을 위한 고순도 코디어라이트 재료

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US20040009410A1 (en) * 2002-07-15 2004-01-15 International Business Machines Corporation Integrated cooling substrate for extreme ultraviolet reticle
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CN101030041A (zh) * 2005-10-28 2007-09-05 Asml荷兰有限公司 光刻装置和器件制造方法

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US6159643A (en) * 1999-03-01 2000-12-12 Advanced Micro Devices, Inc. Extreme ultraviolet lithography reflective mask
US20040009410A1 (en) * 2002-07-15 2004-01-15 International Business Machines Corporation Integrated cooling substrate for extreme ultraviolet reticle
US6806006B2 (en) * 2002-07-15 2004-10-19 International Business Machines Corporation Integrated cooling substrate for extreme ultraviolet reticle
CN1488994A (zh) * 2002-08-02 2004-04-14 Ф�ز������쳧 用于特殊微型光刻的基片
CN101030041A (zh) * 2005-10-28 2007-09-05 Asml荷兰有限公司 光刻装置和器件制造方法

Also Published As

Publication number Publication date
JP5449358B2 (ja) 2014-03-19
KR101670318B1 (ko) 2016-10-28
WO2010020337A1 (en) 2010-02-25
KR20110046545A (ko) 2011-05-04
CN102132209A (zh) 2011-07-20
NL2003305A (en) 2010-03-10
TW201013304A (en) 2010-04-01
JP2012500481A (ja) 2012-01-05
TWI434132B (zh) 2014-04-11
US8736810B2 (en) 2014-05-27
US20110116068A1 (en) 2011-05-19

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Granted publication date: 20140716

Termination date: 20200729

CF01 Termination of patent right due to non-payment of annual fee