WO2015172670A1 - 波长转换装置、光源系统及投影系统 - Google Patents

波长转换装置、光源系统及投影系统 Download PDF

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Publication number
WO2015172670A1
WO2015172670A1 PCT/CN2015/078353 CN2015078353W WO2015172670A1 WO 2015172670 A1 WO2015172670 A1 WO 2015172670A1 CN 2015078353 W CN2015078353 W CN 2015078353W WO 2015172670 A1 WO2015172670 A1 WO 2015172670A1
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Prior art keywords
wavelength conversion
layer
conversion device
material layer
conversion material
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PCT/CN2015/078353
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English (en)
French (fr)
Inventor
吴希亮
田梓峰
戴达炎
陈雨叁
许颜正
Original Assignee
深圳市绎立锐光科技开发有限公司
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Application filed by 深圳市绎立锐光科技开发有限公司 filed Critical 深圳市绎立锐光科技开发有限公司
Priority to JP2016567679A priority Critical patent/JP6366736B2/ja
Priority to KR1020167034642A priority patent/KR101841229B1/ko
Priority to US15/310,396 priority patent/US9897303B2/en
Priority to EP15792223.8A priority patent/EP3144724B1/en
Publication of WO2015172670A1 publication Critical patent/WO2015172670A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/20—Dichroic filters, i.e. devices operating on the principle of wave interference to pass specific ranges of wavelengths while cancelling others
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
    • F21V29/86—Ceramics or glass
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/08—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for producing coloured light, e.g. monochromatic; for reducing intensity of light
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/007—Optical devices or arrangements for the control of light using movable or deformable optical elements the movable or deformable optical element controlling the colour, i.e. a spectral characteristic, of the light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/16—Cooling; Preventing overheating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2033—LED or laser light sources
    • G03B21/204—LED or laser light sources using secondary light emission, e.g. luminescence or fluorescence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

Definitions

  • the present invention relates to the technical field of light source systems, and in particular to a wavelength conversion device, a light source system, and a projection system.
  • excitation light source excitation light having a predetermined wavelength
  • LED Light source emerging semiconductor light sources
  • solid laser source solid laser source
  • Fig. 1 is a view showing the structure of a conventional wavelength conversion device.
  • the conventional wavelength conversion device includes a wavelength conversion material layer 10 ', filter layer 30' and dielectric layer 20'.
  • the wavelength conversion material layer 10' is disposed on one side of the excitation light source
  • the filter film layer 30' is disposed on the wavelength conversion material layer 10'
  • the dielectric layer 20' is disposed between the wavelength conversion material layer 10' and the filter film layer 30'.
  • the working process of the above wavelength conversion device is as follows: the excitation light emitted by the excitation light source is transmitted through the filter film layer to the wavelength conversion material layer to excite The wavelength converting material layer is subjected to a laser; then partially emitted by the laser through the wavelength converting material layer, and the remaining laser light and the excitation light not absorbed by the wavelength converting material are scattered by the diffuse reflection of the wavelength converting material layer. The filter layer is reflected back to the wavelength conversion material layer through the filter layer to enable secondary utilization, thereby improving the utilization of the excitation light and the laser.
  • the dielectric layer has a lower refractive index and is capable of Large angle light from the wavelength conversion material layer using total reflection
  • the excitation light (including the unabsorbed excitation light) is reflected back to the wavelength conversion material layer, so that the excitation light not absorbed by the wavelength conversion material layer is used twice, thereby further improving the conversion efficiency of the wavelength conversion device.
  • the secondary utilization of the excitation light by the wavelength conversion material layer causes the heat generated by the wavelength conversion material layer to be increased, however
  • the thermal conductivity of the dielectric layer and the filter layer is poor, so the heat on the wavelength conversion material layer is difficult to be timely Conducted out so that the brightness of the laser light and the stability of the wavelength converting material layer produced by the wavelength conversion device are reduced.
  • the power of the excitation light increases, the heat generated by the wavelength conversion material layer will increase, resulting in a wavelength conversion material layer.
  • the heat on the upper side is more difficult to conduct in time, resulting in a decrease in the conversion efficiency of the wavelength conversion device.
  • the present invention aims to provide a wavelength conversion device, a light source system, and a projection system to solve the problem that the heat generated by the wavelength conversion material layer in the prior art is difficult to conduct.
  • the present invention provides a wavelength conversion device comprising a wavelength conversion material layer and a first filter film layer disposed on a first side of the wavelength conversion material layer, the wavelength conversion device further comprising a wavelength conversion material a first heat conductive medium layer between the layer and the first filter film layer, the first heat conductive medium layer having a thermal conductivity greater than or equal to a thermal conductivity of the wavelength conversion material layer, and a refractive index lower than a refractive index of the wavelength conversion material layer.
  • the first heat transfer medium layer is a porous structure layer containing heat conductive particles.
  • the first heat conductive medium layer covers the surface of the first filter film layer, and the area of the heat conductive particles in contact with the first filter film layer is 10% of the total area of the first filter film layer. ⁇ 50%.
  • the thickness of the first heat conductive medium layer is less than 40 ⁇ m, more preferably less than 20 ⁇ m .
  • the first heat transfer medium layer is composed of a heat transfer medium composition containing heat conductive particles and glass frit.
  • the first heat transfer medium layer is composed of heat conductive particles treated with a silane coupling agent.
  • the volume fraction of the silane coupling agent on the surface of the heat conductive particles in the first heat conductive medium layer is 0.1% to 1%.
  • the silane coupling agent is KH550, KH560 or KH570.
  • the wavelength conversion material layer is a silica gel phosphor layer composed of a phosphor and a silica gel.
  • the wavelength conversion material layer is a fluorescent glass composed of a phosphor and a glass frit.
  • the thermal conductivity of the thermally conductive particles is greater than 10 W/mK.
  • the heat conductive particles are selected from any one of diamond, carbon nanotube, graphene, aluminum nitride, silicon nitride, silicon carbide, boron nitride, aluminum oxide, zinc oxide or barium sulfate. Or a variety.
  • the heat conductive particles are in the form of sheets or fibers, and the heat conductive particles are white or transparent.
  • the particle diameter of the heat conductive particles is 0.1 ⁇ m to 20 ⁇ m.
  • the wavelength conversion device further includes a second filter film layer disposed on the second side of the wavelength conversion material layer.
  • the wavelength conversion device further includes a dielectric layer disposed between the wavelength conversion material layer and the second filter film layer, the dielectric layer having a refractive index smaller than a refractive index of the wavelength conversion material layer.
  • the wavelength conversion device further includes a second heat conduction medium layer disposed between the wavelength conversion material layer and the second filter film layer, and the thermal conductivity of the second heat conduction medium layer is greater than or equal to wavelength conversion
  • the thermal conductivity of the material layer is less than the refractive index of the wavelength converting material layer.
  • the second heat transfer medium layer has the same characteristics as the first heat transfer medium layer described above.
  • the present invention also provides a light source system comprising an excitation light source and a wavelength conversion device, wherein the wavelength conversion device is the above-described wavelength conversion device of the present invention.
  • the present invention also provides a projection system comprising a projection assembly and a light source system, wherein the light source system is the above-described light source system of the present invention.
  • a first heat conductive medium layer is disposed between the wavelength conversion material layer and the first filter film layer. Since the refractive index of the first heat conductive medium layer is smaller than the refractive index of the wavelength conversion material layer, and the thermal conductivity of the first heat conductive medium layer is greater than or equal to the thermal conductivity of the wavelength conversion material layer, it is ensured that the large-angle exit is utilized. When the light is totally reflected back to the wavelength conversion material layer to improve the light utilization efficiency, the heat generated by the wavelength conversion material layer can be timely transmitted by using the excellent thermal conductivity of the first heat conduction medium layer, thereby improving the conversion of the wavelength conversion device. effectiveness.
  • FIG. 1 is a schematic structural view of a conventional wavelength conversion device
  • 2a is a schematic structural view of a wavelength conversion device according to a preferred embodiment of the present invention.
  • 2b is a schematic structural view of a wavelength conversion device according to another preferred embodiment of the present invention.
  • 2c is a schematic structural view of a wavelength conversion device according to still another preferred embodiment of the present invention.
  • Figure 2d is a block diagram showing the structure of a wavelength conversion device according to still another preferred embodiment of the present invention.
  • Figure 3 shows Example 1 and Comparative Example 1 A graph showing the relationship between the luminous intensity of the wavelength conversion device and the power of the excitation light.
  • spatial relative terms can be used here, such as 'above..., 'above', 'in'...
  • the upper surface ', 'above', etc. is used to describe the spatial positional relationship of one device or feature as shown in the figures with other devices or features. It will be understood that the spatially relative terms are intended to encompass different orientations in use or operation in addition to the orientation of the device described. For example, if the device in the figures is inverted, the device described as 'above other devices or configurations' or 'above other devices or configurations' will be positioned 'below other devices or configurations' or 'in Under other devices or configurations'.
  • the exemplary term ' is ...
  • the top 'can include 'in the 'above' and 'below...' directions.
  • the device can also be positioned in other different ways (rotate 90 Degree or in other orientations, and a corresponding explanation of the relative description of the space used here.
  • the wavelength conversion device includes a wavelength conversion material layer 10 and a first filter film layer 30 disposed on a first side of the wavelength conversion material layer 10, the wavelength conversion device further comprising a wavelength conversion material layer 10, the first heat conductive medium layer 20 between the first filter film layer 30, the thermal conductivity of the first heat conductive medium layer 20 is greater than or equal to the thermal conductivity of the wavelength conversion material layer 10, and the refractive index is smaller than the wavelength conversion material layer
  • the first side herein refers to the light incident side of the wavelength conversion material layer.
  • the heat generated by the wavelength conversion material layer 10 can pass through the first heat conduction medium layer 20 Conducting to the first side of the wavelength converting material layer 10 such that the heat generated by the wavelength converting material layer 10 is timely Conducted out, thereby further improving the brightness and stability of the laser generated by the wavelength conversion device.
  • the refractive index of the first heat conductive medium layer 20 is smaller than the thermal conductivity of the wavelength conversion material layer 10,
  • the large angle light (including the excitation light) from the wavelength conversion material layer 10 is reflected back to the wavelength conversion material layer 10 so that the wavelength conversion material layer is not
  • the absorbed excitation light is used twice, thereby improving the conversion efficiency of the excitation light generated by the wavelength conversion device.
  • the first heat conductive medium layer 20 is only required to have a thermal conductivity greater than or equal to the wavelength conversion material layer 10
  • the thermal conductivity, the refractive index is smaller than the refractive index of the wavelength conversion material layer 10, and the heat generated by the wavelength conversion material layer 10 can be timely Conducted out to increase the brightness of the laser light and the thermal stability of the wavelength converting material layer produced by the wavelength conversion device.
  • the first heat conductive medium layer 20 is a porous structure containing heat conductive particles. Floor. The heat conductive particles are stacked and connected to each other to form a network structure, and a pore structure is formed between the heat conductive particles.
  • the network structure in the first heat conductive medium layer 20 can heat the heat generated by the wavelength conversion material layer 10 in time Conducted out to avoid deterioration of the wavelength conversion material due to high temperature, thereby improving the brightness of the laser light generated by the wavelength conversion device and the thermal stability of the wavelength conversion material layer.
  • the pore structure ensures excitation and laser irradiation. It is possible to illuminate the wavelength conversion material layer 10 through the first heat conduction medium layer 20 and then pass through the wavelength conversion material layer 10 The diffuse reflection is scattered to the first filter layer 30 and reflected back to the wavelength converting material layer 10 by the first filter layer 30. In order to enable the laser to be used twice, thereby improving the conversion efficiency of the excitation light.
  • the pores of the first heat conductive medium layer 20 may be air-filled, thereby enhancing the reflection of the large-angle light from the wavelength conversion material layer 10 by the interface of the first heat conductive medium layer 20 and the wavelength conversion material layer 10.
  • the heat generated by the wavelength conversion material layer 10 mainly passes through the heat conductive particles and the first filter film layer 30 in the first heat conductive medium layer 20
  • the contact surfaces that are in contact are thermally conductive. The larger the contact area, the better the heat conduction (heat dissipation) effect of the first heat transfer medium layer 20, the worse the reflection effect of the first filter film layer 30 on the laser light, and the light is not favorable for the light to pass through the first heat conduction medium layer. 20 .
  • the heat conductive particles and the first filter film layer 30 in the first heat conduction medium layer 20 The area of contact is 10% to 50% of the total area of the first filter layer 30.
  • the first thermally conductive medium layer 20 has a thickness of less than 40 ⁇ m, more preferably less than 20 ⁇ m.
  • First heat transfer medium layer 20 having the above thickness Has a better thermal (heat dissipation) effect.
  • the first heat conductive medium layer 20 It consists of a thermally conductive medium composition comprising thermally conductive particles or a thermally conductive medium composition comprising thermally conductive particles and glass frit. More preferably, the first heat transfer medium layer 20 It consists of thermally conductive particles treated with a silane coupling agent.
  • the method for treating the surface of the heat conductive particles by using a silane coupling agent may be: immersing the heat conductive medium preparation layer formed by pressing the heat conductive medium composition containing the heat conductive particles with a silane coupling agent, so that the silane coupling is attached to the heat conduction.
  • a silane coupling agent is a special class of organofunctional compounds having an organophilic group at one end and an intrinsic group at one end. Therefore, the silane coupling agent is used to treat the heat conductive particles in the heat conductive medium preparation layer, and on the one hand, the first heat conduction medium layer can be improved.
  • the volume fraction of the silane coupling agent on the surface of the thermally conductive particles in the first heat conductive medium layer 20 is 0.1% to 1%, preferably the silane coupling agent is KH550. , KH560 or KH570.
  • the above silane coupling agent not only has good bonding ability, but also has good heat resistance.
  • the type and manufacturing process of the first heat conductive medium layer 20 and the wavelength conversion material layer 10 employed The type is related.
  • the first heat conductive medium layer 20 is composed of a heat conductive medium composition containing heat conductive particles; and the wavelength conversion material layer 10 is a fluorescent glass composed of a phosphor powder and a glass powder. It consists of a thermally conductive medium composition comprising thermally conductive particles or a thermally conductive medium composition comprising thermally conductive particles and glass frit.
  • the silica gel phosphor layer is formed by curing the phosphor and the silica gel
  • the fluorescent glass is formed by sintering the phosphor powder and the glass powder
  • the heat conductive medium composition is formed on the wavelength conversion material layer by spraying, painting or screen printing. 10 on.
  • the wavelength conversion material layer 10 is a silica gel phosphor layer or a fluorescent glass, and the first heat conduction medium layer 20 It is also possible to press from a thermally conductive medium composition comprising thermally conductive particles, and then to treat the surface formation of the thermally conductive particles with a silane coupling agent.
  • the thermal conductivity of the thermally conductive particles in the first heat conductive medium layer 20 is greater than 10W/mK .
  • the thermally conductive particles are selected from any one or more of diamond, carbon nanotube, graphene, aluminum nitride, silicon nitride, silicon carbide, boron nitride, aluminum oxide, zinc oxide or barium sulfate.
  • the thermally conductive particles are stacked on each other to form a network structure capable of converting a wavelength conversion material layer 10 The heat generated is conducted out in time.
  • the thermal conductivity of the above network structure is related to the shape and size of the thermally conductive particles.
  • the heat conductive particles are in the form of a sheet or a fiber, and the heat conductive particles having a sheet shape or a fiber shape are more advantageous for mutually stacking and forming a network structure.
  • the particle size of the thermally conductive particles is 0.1 ⁇ m ⁇ 20 ⁇ m .
  • the particle diameter of the thermally conductive particles is a maximum length which the thermal particles have in three dimensions, for example, the particle diameter of the fibrous thermally conductive particles means the length of the fibrous thermally conductive particles.
  • the larger the particle size of the thermally conductive particles the more favorable the accumulation of thermally conductive particles to form a network structure. It should be noted that in order to reduce the absorption of the laser by the thermally conductive particles, it is preferred that the thermally conductive particles be white or transparent.
  • the above wavelength conversion device may further include other structures, and is not limited to including the wavelength conversion material layer 10 and the first filter film layer 30. And a first heat conductive medium layer 20 .
  • the wavelength conversion device further includes a second filter layer 40 disposed on the second side of the wavelength conversion material layer 10, the structure of which is shown in Figure 2b.
  • the operation of the wavelength conversion device is as follows: the excitation light emitted by the excitation light source is transmitted through the first filter film layer 30 to the wavelength conversion material layer 10 to excite the wavelength conversion material layer 10 A laser beam is generated; then, the laser light is irradiated onto the second filter film layer 40, at which time a small angle of the laser light is transmitted through the second filter film layer 40, and a large angle of the laser light is transmitted by the second filter film layer 40. Reflecting back to the wavelength converting material layer 10 Next, the wavelength converting material layer 10 scatters and reflects the large angle of the laser light back to the second filter film layer by diffuse reflection. After a plurality of times, the laser is all emitted at a small angle, thereby improving the light utilization efficiency of the emitted light.
  • the second side herein refers to the light exit side of the wavelength conversion material layer.
  • first filter film layer 30 and the second filter film layer 40 described above may be filter films which are common in the art.
  • first The filter film layer 30 and the second filter film layer 40 may be two or more layers of dielectric films composed of different optical refractive index materials, such as hollow optical sheets.
  • First filter layer 30 and second filter layer 40 may also be an optical film containing a regularly arranged photonic crystal, or a combination film of the optical film and the above different optical refractive index dielectric film.
  • the wavelength conversion device further includes a wavelength conversion material layer 10 and a second filter layer 40.
  • the dielectric layer 50 has a refractive index lower than that of the wavelength converting material layer 10.
  • the dielectric layer 50 has a lower refractive index and is capable of The large angle light from the wavelength converting material layer 10 is reflected back to the wavelength converting material layer 10 by total reflection so that the wavelength converting material layer is not
  • the absorbed excitation light is used twice, and the large-angle laser light is scattered by the wavelength conversion material into a small-angle light, thereby further improving the conversion efficiency and light utilization efficiency of the excitation light.
  • the above dielectric layer 50 A dielectric material having a low refractive index, which is common in the art, can be used.
  • the dielectric layer 50 is an air dielectric layer formed between the wavelength converting material layer 10 and the second filter film layer 40.
  • the wavelength conversion device further includes a wavelength conversion material layer 10 and a second filter film layer 40.
  • a second heat conductive medium layer 60 (having a structure as shown in FIG. 2d), the second heat conductive medium layer 60 has a thermal conductivity greater than or equal to the thermal conductivity of the wavelength converting material layer 10, and the refractive index is smaller than the wavelength converting material layer 10 Refractive index.
  • the second heat transfer medium layer 60 has the same characteristics as the first heat transfer medium layer 20 described above.
  • the heat generated by the above-mentioned wavelength conversion material layer 10 can pass through the second heat conduction medium layer 60 Conducting toward the second side of the wavelength converting material layer 10 such that the heat generated by the wavelength converting material layer 1010 is more timely Conducted out, thereby further improving the brightness and stability of the laser generated by the wavelength conversion device.
  • the refractive index of the second heat conductive medium layer 60 is smaller than the refractive index of the wavelength conversion material layer 10,
  • the large angle light from the wavelength converting material layer 10 is reflected back to the wavelength converting material layer 10 so that the wavelength converting material layer is not
  • the absorbed excitation light is used twice, and the large angle is scattered by the laser light to the small-angle light by the wavelength conversion material, thereby further improving the conversion efficiency and light utilization efficiency of the excitation light generated by the wavelength conversion device.
  • the present invention also provides a light source system comprising an excitation light source and a wavelength conversion device, wherein the wavelength conversion device is the above-described wavelength conversion device of the present invention.
  • the heat generated by the wavelength conversion material layer in the light source system Conducted out, thereby improving the brightness and stability of the laser generated by the wavelength conversion device, thereby improving the brightness and stability of the light source system.
  • the present invention also provides a projection system comprising a projection assembly and a light source system, wherein the light source system is the above-described light source system of the present invention.
  • the brightness and stability of the light source system in the projection system is improved to meet the brightness requirements of the projection system during use.
  • the wavelength conversion device provided by the present invention will be further described below in conjunction with the embodiments.
  • the wavelength conversion device includes a wavelength conversion material layer, a first filter film layer disposed on a first side of the wavelength conversion material layer, a first heat conduction medium layer disposed between the wavelength conversion material layer and the first filter film layer, a second filter film layer disposed on the second side of the wavelength conversion material layer and a second heat transfer medium layer disposed between the wavelength conversion material layer and the second filter film layer.
  • the wavelength conversion material layer is a fluorescent glass formed by sintering phosphor powder and glass powder, and the thermal conductivity of the wavelength conversion material layer is 5.0 W/mK, refractive index 2.2;
  • the first heat conducting medium layer is screen printed diamond particles on the surface of the first side of the wavelength converting material (average particle size is 5 ⁇ m) And pressing, then treating the surface of the diamond particles with a silane coupling agent (KH560);
  • the second heat conducting medium layer is passing through the surface of the second side of the wavelength converting material
  • the diamond particles (average particle diameter of 5 ⁇ m) were screen printed and pressed, and then the surface formation of the diamond particles was treated with a silane coupling agent (KH560).
  • the first heat conductive medium layer has the following characteristics: an area of the first heat conductive medium layer in which the diamond particles are in contact with the first filter film layer is 30% of the total area of the first filter film layer; a thickness of the first heat conductive medium layer 3 ⁇ m
  • the first thermal conductive layer has a thermal conductivity of 12.8 W/mK and a refractive index of 1.4; the volume fraction of the silane coupling agent (KH560) on the surface of the diamond particles in the first thermal conductive layer is 1%. .
  • the second heat conductive medium layer has the following characteristics: the area of the second heat conductive medium layer in which the diamond particles are in contact with the second filter film layer is 30% of the total area of the second filter film layer; the thickness of the second heat conductive medium layer 3 ⁇ m
  • the second thermal conductive layer has a thermal conductivity of 12.8 W/mK and a refractive index of 1.4; and the volume fraction of the silane coupling agent (KH560) on the surface of the diamond particles in the second thermally conductive medium layer is 1%. .
  • the wavelength conversion device includes a wavelength conversion material layer, a first filter film layer disposed on a first side of the wavelength conversion material layer, a first heat conduction medium layer disposed between the wavelength conversion material layer and the first filter film layer, a second filter film layer disposed on the second side of the wavelength conversion material layer and a dielectric layer disposed between the wavelength conversion material layer and the second filter film layer.
  • the wavelength conversion material layer is a silica gel phosphor layer formed by curing the phosphor and the silica gel
  • the first heat conductive medium layer is obtained by brushing a sheet-like fibrous carbon nanotube (average particle diameter of 20 ⁇ m) on a wavelength conversion material and pressing, and then using a silane coupling agent (KH560)
  • KH560 silane coupling agent
  • the surface of the carbon nanotube is formed, the thermal conductivity of the wavelength conversion material layer is 5.0 W/mK, the refractive index is 2.2, and the dielectric layer is an air dielectric layer.
  • the first heat conductive medium layer has the following characteristics: the area of the first heat conductive medium layer in which the carbon nanotubes are in contact with the first filter film layer is 20% of the total area of the first filter film layer; the first heat conductive medium layer 6 ⁇ m thick
  • the first thermal conductive layer has a thermal conductivity of 12.5 W/mK and a refractive index of 1.5; and the volume fraction of the silane coupling agent (KH560) on the surface of the carbon nanotube in the first thermal conductive layer is 0.1%. .
  • the wavelength conversion device includes a wavelength conversion material layer, a first filter film layer disposed on a first side of the wavelength conversion material layer, a first heat conduction medium layer disposed between the wavelength conversion material layer and the first filter film layer, and a second filter film layer disposed on the second side of the wavelength conversion material layer.
  • the wavelength conversion material layer is a silica gel phosphor layer formed by curing the phosphor and the silica gel, and the thermal conductivity of the wavelength conversion material layer is 5.0 W/mK, refractive index 2.2;
  • the first heat conductive medium layer is formed by spraying diamond particles (average particle diameter of 2 ⁇ m) on the wavelength conversion material and pressing.
  • the first heat conductive medium layer has the following characteristics: the area of the first heat conductive medium layer in which the diamond particles contact the first filter film layer is 10% of the total area of the first filter film layer; the thickness of the first heat conductive medium layer 20 ⁇ m
  • the first thermal conductive layer has a thermal conductivity of 12.4 W/mK and a refractive index of 1.6.
  • the wavelength conversion device includes a wavelength conversion material layer, a first filter film layer disposed on a first side of the wavelength conversion material layer, and a first heat conduction medium layer disposed between the wavelength conversion material layer and the first filter film layer.
  • the wavelength conversion material layer is a fluorescent glass formed by sintering phosphor powder and glass powder, and the thermal conductivity of the wavelength conversion material layer is 5.2 W/mK, refractive index is 2.3;
  • the first heat conductive medium layer is formed by screen printing diamond particles (average particle diameter of 2 ⁇ m) and glass frit on the wavelength converting material and sintering.
  • the first heat conductive medium layer has the following characteristics: the area of the first heat conductive medium layer in which the diamond particles are in contact with the first filter film layer is 50% of the total area of the first filter film layer; the thickness of the first heat conductive medium layer 15 ⁇ m
  • the first thermal conductive layer has a thermal conductivity of 13 W/mK and a refractive index of 1.3.
  • the wavelength conversion device includes a wavelength conversion material layer, a first filter film layer disposed on a first side of the wavelength conversion material layer, and a first heat conduction medium layer disposed between the wavelength conversion material layer and the first filter film layer.
  • the wavelength conversion material layer is a silica gel phosphor layer formed by curing the phosphor and the silica gel, and the thermal conductivity of the wavelength conversion material layer is 4.8 W/mK, refractive index 2.2;
  • the first heat conductive medium layer is formed by spraying sheet-like silicon nitride particles (average particle diameter of 0.1 ⁇ m) on the wavelength conversion material and pressing.
  • the first heat conductive medium layer has the following characteristics: the area of the first heat conductive medium layer contacting the silicon nitride particles with the first filter film layer is 8% of the total area of the first filter film layer; the first heat conductive medium layer The thickness is 40 ⁇ m
  • the first thermal conductive layer has a thermal conductivity of 12 W/mK and a refractive index of 1.6.
  • the wavelength conversion device includes: a wavelength conversion material layer, a dielectric layer and a first filter film layer disposed on one side of the wavelength conversion material layer, and a dielectric layer and a first filter sequentially disposed on the other side of the wavelength conversion material layer.
  • Membrane layer a silica gel phosphor layer formed by curing the phosphor and the silica gel, and the dielectric layer is Air dielectric layer.
  • the examples 1 to 5 and the comparative example 1 are provided.
  • the luminous intensity increases as the power of the excitation light source increases.
  • the luminous intensity of the wavelength conversion device provided in Examples 1 to 5 is much higher than that provided in Comparative Example 1 when the excitation light source power remains fixed.
  • the luminous intensity of the wavelength conversion device provided in Examples 1 to 5 linearly increases, and Comparative Example 1 provides The luminous intensity of the wavelength conversion device first increases and then decreases. It can be inferred from the above analysis that the heat conductive medium layer in the wavelength conversion device provided in Embodiments 1 to 5 can heat the heat generated by the wavelength conversion material layer in time. Conducted out, thereby improving the brightness and stability of the laser generated by the wavelength conversion device, thereby improving the conversion efficiency of the wavelength conversion device.
  • a heat conductive medium layer is disposed between the wavelength conversion material layer and the first filter film layer.
  • the thermal conductivity layer has a thermal conductivity greater than or equal to the thermal conductivity of the wavelength conversion material layer, and the heat generated by the wavelength conversion material layer can be timely Conducted out, thereby improving the brightness and stability of the laser generated by the wavelength conversion device.
  • the refractive index of the heat conductive medium layer is smaller than the refractive index of the wavelength conversion material layer, and the large angle from the wavelength conversion material layer can be The light (including the excitation light) is reflected back to the wavelength conversion material layer, so that the excitation light not absorbed by the wavelength conversion material layer is used twice, thereby improving the conversion efficiency of the excitation light generated by the wavelength conversion device.

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Abstract

一种波长转换装置、包括其的光源系统及投影系统。该波长转换装置包括波长转换材料层(10)、设置于波长转换材料层(10)第一侧的第一滤光膜层(30)和设置于波长转换材料层(10)和第一滤光膜层(30)之间的第一导热介质层(20)。第一导热介质层(20)的热导率大于或等于波长转换材料层(10)的热导率，其折射率小于波长转换材料层(10)的折射率。

Description

波长转换装置、光源系统及投影系统 技术领域
本发明涉及光源系统的技术领域，具体而言，涉及一种波长转换装置、光源系统及投影系统。
背景技术
随着工业发展水平的不断提高，光源的运用场合越来越多样化，例如用于背投电视或投影仪的图像投影，或用作汽车、船、或飞机的照明灯。不同的运用场合对光源的色彩（或波长）的要求各不相同。目前，采用激发光源（具有预定波长的激发光）来照射波长转换装置，以激发波长转换装置中的波长转换材料，从而获得具有特定色彩（或波长）的光。常见的激发光源包括传统的高压汞灯光源以及新兴的半导体光源（ LED 光源）和固体激光光源。其中，半导体光源的亮度不足，使得半导体光源难以取代传统的高压汞灯光源。固体激光光源具有高亮度、高稳定性的特性，逐渐发展成为激发光源的主流技术之一。
图 1 示出了现有的波长转换装置的结构示意图。如图 1 所示，现有的波长转换装置包括波长转换材料层 10 ′ 、滤光膜层 30 ′和介质层20′。其中，波 长转换材料层 10 ′ 设置于激发光源的一侧，滤光膜层 30 ′ 设置于波长转换材料层 10 ′ 靠近激发光源的一侧， 介质层20′设置于 波长转换材料层 10 ′ 和滤光膜层 30 ′之间。
上述 波长转换装置的工作过程为： 激发光源发射的激发光透过 滤光膜层 照射到 波长转换材料层 ，激发 波长转换材料层 产生受激光；然后部分受激光透过 波长转换材料层发射出去，而其余 受激光和未被波长转换材料吸收的激发光通过 波长转换材料层 的漫反射作用散射到 滤光膜层 ，并通过 滤光膜层 反射回到 波长转换材料层 ，以使其能够二次利用，从而提高激发光和受激光的利用率。特别地，介质层具有较低的折射率，能够 利用全反射将来自波长转换材料层的大角度 光 （包括未被吸收的激发光）反射回波长转换材料层，使没有被波长转换材料层吸收的激发光被二次利用，从而进一步提高波长转换装置的转换效率。
上述 波长转换装置中，波长转换材料层 对激发光的二次利用会使得 波长转换材料层产生的热量得以增加，然而 介质层和 滤光膜层 的导热性很差， 因此波长转换材料层 上的热量难以及时地 传导出去，从而使得波长转换装置产生的受激光的亮度和波长转换材料层的稳定性随之降低。随着激发光的功率的提高，波长转换材料层产生的热量将随之提高，使得波长转换材料层 上的热量更加难以及时地 传导出去，从而导致波长转换装置的转换效率下降。针对上述问题，目前还没有有效的解决办法。
 技术问题
本发明旨在提供一种波长转换装置、光源系统及投影系统，以解决现有技术中波长转换材料层产生的热量难以传导出去的问题。
为了实现上述目的，本发明提供了一种波长转换装置，包括波长转换材料层和设置于波长转换材料层的第一侧的第一滤光膜层，该波长转换装置还包括设置于波长转换材料层与第一滤光膜层之间的第一导热介质层，第一导热介质层的热导率大于或等于波长转换材料层的热导率，折射率小于波长转换材料层的折射率。
进一步地，上述波长转换装置中，第一导热介质层为包含导热颗粒的多孔 结构 层。
进一步地，上述波长转换装置中，第一导热介质层覆盖第一滤光膜层表面，且导热颗粒与第一滤光膜层相接触的面积为第一滤光膜层的总面积的 10%~50% 。
进一步地，上述波长转换装置中，第一导热介质层的厚度小于 40 μ m ，更优选小于 20 μ m 。
进一步地，上述波长转换装置中，第一导热介质层由包含导热颗粒和玻璃粉的导热介质组合物组成。
进一步地，上述波长转换装置中，第一导热介质层由经硅烷偶联剂处理的导热颗粒组成。
进一步地，上述波长转换装置中，第一导热介质层中导热颗粒表面的硅烷偶联剂的体积分数为 0.1%~1% ，优选硅烷偶联剂为 KH550 、 KH560 或 KH570 。
进一步地，上述波长转换装置中，波长转换材料层为荧光粉和硅胶组成的硅胶荧光粉层。
进一步地，上述波长转换装置中，波长转换材料层为荧光粉和玻璃粉组成的荧光玻璃。
进一步地，上述波长转换装置中，导热颗粒的热导率大于 10W/mK 。
进一步地，上述波长转换装置中，导热颗粒选自金刚石、碳纳米管、石墨烯、氮化铝、氮化硅、碳化硅、氮化硼、氧化铝、氧化锌或硫酸钡中的任一种或多种。
进一步地，上述波长转换装置中，导热颗粒为片状或纤维状，导热颗粒为白色或透明。
进一步地，上述波长转换装置中，导热颗粒的粒径为 0.1 μ m~20 μ m 。
进一步地，上述波长转换装置中，波长转换装置还包括设置于波长转换材料层的第二侧的第二滤光膜层。
进一步地，上述波长转换装置中，波长转换装置还包括设置于波长转换材料层和第二滤光膜层之间的介质层，介质层的折射率小于波长转换材料层的折射率。
进一步地，上述波长转换装置中，波长转换装置还包括设置于波长转换材料层和第二滤光膜层之间的第二导热介质层，第二导热介质层的热导率大于或等于波长转换材料层的热导率，折射率小于波长转换材料层的折射率。
进一步地，上述波长转换装置中，第二导热介质层具有与本申请上述的第一导热介质层相同的特性。
本发明还提供了一种光源系统，包括激发光源和波长转换装置，其中波长转换装置为本发明上述的波长转换装置。
本发明还提供了一种投影系统，包括投影组件和光源系统，其中光源系统为本发明上述的光源系统。
应用本发明的技术方案，在波长转换材料层与第一滤光膜层之间设置第一导热介质层。由于该第一导热介质层的折射率小于波长转换材料层的折射率，且第一导热介质层的热导率大于或等于波长转换材料层的热导率，因此在保证了利用大角度出射的光全反射回波长转换材料层以提高光利用率的情况下，能够利用第一导热介质层优良的导热性能将波长转换材料层产生的热量及时的传到出去，从而提高了波长转换装置的转换效率。
 附图说明
构成本发明的一部分的说明书附图用来提供对本发明的进一步理解，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。在附图中：
图 1 示出了现有波长转换装置的结构示意图；
图 2a 示出了根据本发明的优选实施方式提供的波长转换装置的结构示意图；
图 2b 示出了根据本发明的另一种优选实施方式提供的波长转换装置的结构示意图；
图 2c 示出了根据本发明的又一种优选实施方式提供的波长转换装置的结构示意图；
图 2d 示出了根据本发明的 再 一种优选实施方式提供的波长转换装置的结构示意图；以及
图 3 示出了实施例 1 和对比例 1 提供的波长转换装置的发光强度与激发光的功率之间的关系图。
 本发明的实施方式
需要说明的是，在不冲突的情况下，本发明中的实施例及实施例中的特征可以相互组合。下面将参考附图并结合实施例来详细说明本发明。
需要注意的是，这里所使用的术语仅是为了描述具体实施方式，而非意图限制根据本发明的示例性实施方式。如在这里所使用的，除非上下文另外明确指出，否则单数形式也意图包括复数形式，此外，还应当理解的是，当在本说明书中使用属于 ' 包含 ' 和 / 或 ' 包括 ' 时，其指明存在特征、步骤、操作、器件、组件和 / 或它们的组合。
为了便于描述，在这里可以使用空间相对术语，如'在 …… 之上'、'在 …… 上方'、'在 …… 上表面'、'上面的'等，用来描述如在图中所示的一个器件或特征与其他器件或特征的空间位置关系。应当理解的是，空间相对术语旨在包含除了器件在图中所描述的方位之外的在使用或操作中的不同方位。例如，如果附图中的器件被倒置，则描述为'在其他器件或构造上方'或'在其他器件或构造之上'的器件之后将被定位为'在其他器件或构造下方'或'在其他器件或构造之下'。因而，示例性术语'在 …… 上方'可以包括'在 …… 上方'和'在 …… 下方'两种方位。该器件也可以其他不同方式定位（旋转 90 度或处于其他方位），并且对这里所使用的空间相对描述作出相应解释。
正如背景技术中所介绍的，波长转换材料层产生的热量难以传导出去，从而使得波长转换装置产生的受激光的亮度和稳定性降低。本发明的发明人针对上述问题进行了研究，提出了一种波长转换装置。如图 2a 所示，该波长转换装置包括波长转换材料层 10 和设置于波长转换材料层 10 的第一侧的第一滤光膜层 30 ，该波长转换装置还包括设置于波长转换材料层 10 与第一滤光膜层 30 之间的第一导热介质层 20 ，第一导热介质层 20 的热导率大于或等于波长转换材料层 10 的热导率，折射率小于波长转换材料层 10 的折射率。这里的第一侧是指波长转换材料层的光入射侧。
上述波长转换装置中，上述波长转换材料层 10 产生的热量能够通过第一导热介质层 20 向波长转换材料层 10 的第一侧传导，使得波长转换材料层 10 产生的热量及时 地 传导出去，从而进一步提高了波长转换装置产生的受激光的亮度和稳定性。同时，上述第一导热介质层 20 的折射率小于波长转换材料层 10 的热导率， 能够 将来自波长转换材料层 10 的大角度 光 （包括激发光）反射回波长转换材料层 10 ，使没有被波长转换材料层 10 吸收的激发光被二次利用，从而提高了波长转换装置产生的激发光的转换效率。
上述第一导热介质层 20 只要满足热导率大于或等于波长转换材料层 10 的热导率，折射率小于波长转换材料层 10 的折射率，均能够将波长转换材料层 10 产生的热量 及时地 传导出去，从而提高波长转换装置产生的受激光的亮度和波长转换材料层的热稳定性。在一种优选的实施方式中，上述第一导热介质层 20 为包含导热颗粒的多孔 结构 层。其中导热颗粒相互堆积连接形成网络结构，且导热颗粒之间形成孔隙结构。该第一导热介质层 20 中的网络结构能够将波长转换材料层 10 产生的热量 及时地 传导出去，避免波长转换材料因高温而产生的劣化，从而提高了波长转换装置产生的受激光的亮度和波长转换材料层的热稳定性。同时， 孔隙结构保证了激发光和受激光 能够穿过该第一导热介质层 20 照射在波长转换材料层 10 ，然后 通过 波长转换材料层 10 的漫反射作用散射到第一滤光膜层30，并通过第一滤光膜层30反射回到 波长转换材料层 10 ，以使得受激光能够二次利用，从而提高激发光的转换效率。第一导热介质层20的孔隙可以为空气填充，从而提高第一导热介质层20与波长转换材料层10的界面对来自波长转换材料层10的大角度光的反射作用。
上述波长转换材料层 10 产生的热量主要通过第一导热介质层 20 中导热颗粒与第一滤光膜层 30 相接触的接触面导热。此接触面积越大，第一导热介质层 20 的导热（散热）效果越好，第一滤光膜层 30 对受激光的反射效果却越差，而且不利于光穿过第一导热介质层 20 。为了使得波长转换装置具有最优的导热（散热）效果和受激光的反射效果，在一种优选的实施方式中，第一导热介质层 20 中导热颗粒与第一滤光膜层 30 相接触的面积为第一滤光膜层 30 的总面积的 10%~50% 。
上述第一导热介质层 20 的厚度越大，第一导热介质层 20 的热阻值（第一导热介质层 20 的厚度与热导率的比值）越大，第一导热介质层 20 的导热（散热）效果越差。本领域的技术人员可以根据本发明的教导设定第一导热介质层 20 的厚度。一种优选的实施方式中，第一导热介质层 20 的厚度小于 40 μ m ，更优选小于 20 μ m 。具有上述厚度的第一导热介质层 20 具有更好的导热（散热）效果。
在一种优选的实施方式中，上述第一导热介质层 20 由包含导热颗粒的导热介质组合物组成，或由包含导热颗粒和玻璃粉的导热介质组合物组成。更为优选地，第一导热介质层 20 由经硅烷偶联剂处理的导热颗粒组成。采用硅烷偶联剂处理导热颗粒的表面的方法可以为：采用硅烷偶联剂对由包含导热颗粒的导热介质组合物压制形成的导热介质预备层进行浸泡处理，以使得硅烷偶联附着连接在导热介质预备层中导热颗粒的表面，进而形成上述第一导热材料层；或采用硅烷偶联剂对导热颗粒进行表面包覆，然后将被硅烷偶联剂包覆的导热颗粒刷涂制成第一导热材料层。
硅烷偶联剂是一类特殊的有机官能化合物，它的分子链端一端是亲有机基团，一端是亲无机基团。因此采用硅烷偶联剂处理导热介质预备层中导热颗粒，一方面能够提高上述第一导热介质层 20 中导热颗粒之间的粘结力，另一方面还能提高第一导热介质层 20 中导热颗粒与第一滤光膜层 30 之间的粘结力，从而进一步提高第一导热介质层 20 的导热（散射）效果。在一种优选的实施方式中，第一导热介质层 20 中导热颗粒的表面的硅烷偶联剂的的体积分数为 0.1%~1% ，优选硅烷偶联剂为 KH550 、 KH560 或 KH570 。上述硅烷偶联剂不但具有较好的粘结能力，还具有较好的耐热性能。
上述第一导热介质层 20 的种类和制作工艺与所采用的波长转换材料层 10 的类型有关。在一种优选的实施方式中，波长转换材料层 10 为荧光粉和硅胶组成的硅胶荧光粉层时，第一导热介质层 20 由包含导热颗粒的导热介质组合物组成；波长转换材料层 10 为荧光粉和玻璃粉组成的荧光玻璃时，第一导热介质层 20 由包含导热颗粒的导热介质组合物组成，或由包含导热颗粒和玻璃粉的导热介质组合物组成。其中，硅胶荧光粉层由荧光粉和硅胶固化形成，荧光玻璃由荧光粉和玻璃粉烧结形成，导热介质组合物是通过喷涂、涂刷或丝网印刷等工艺形成于波长转换材料层 10 上。上述工艺的具体参数可以根据现有技术进行设定，在此不再赘述。
上述波长转换材料层 10 为硅胶荧光粉层或荧光玻璃，上述第一导热介质层 20 还可以由包含导热颗粒的导热介质组合物压制，然后采用硅烷偶联剂处理导热颗粒的表面形成。在一种优选的实施方式中，上述第一导热介质层 20 中导热颗粒的热导率大于 10W/mK 。更优选地，上述导热颗粒选自金刚石、碳纳米管、石墨烯、氮化铝、氮化硅、碳化硅、氮化硼、氧化铝、氧化锌或硫酸钡中的任一种或多种。上述导热颗粒相互堆积连接形成网络结构，该网络结构能够将波长转换材料层 10 产生的热量 及时地 传导出去。
上述网络结构的导热效果与导热颗粒的形状和尺寸有关。优选地，上述导热颗粒为片状或纤维状，具有片状或纤维状的导热颗粒更有利于相互堆积连接形成网络结构。更优选地，导热颗粒的粒径为 0.1 μ m~20 μ m 。在这里导热颗粒的粒径是指导热颗粒在三维空间上具有的最大长度，例如纤维状的导热颗粒的粒径是指纤维状的导热颗粒的长度。导热颗粒的粒径越大，越有利于导热颗粒堆积形成网络结构。需要注意的是，为了减少导热颗粒对受激光的吸收，优选导热颗粒为白色或透明。
上述波长转换装置还可以包括其他结构，并不仅限于包括波长转换材料层 10 、第一滤光膜层 30 和第一导热介质层 20 。在一种优选的实施方式中，上述波长转换装置还包括设置于波长转换材料层 10 的第二侧的第二滤光膜层 40 ，其结构如图 2b 所示。 此时，上述 波长转换装置的工作过程为： 激发光源发射的激发光透过第一滤光膜层30照射到 波长转换材料层 10 ，激发 波长转换材料层 10 产生受激光；然后受激光照射到第二滤光膜层40上，此时小角度的受激光能够透过第二滤光膜层40，而大角度的受激光被第二滤光膜层40反射回到 波长转换材料层 10 ； 接下来， 波长转换材料层 10 通过漫反射作用将大角度的受激光散射并反射回到 第二滤光膜层 40 ，经多次此过程，受激光全部以小角度出射，从而提高了出射光的光利用率。这里的第二侧是指波长转换材料层的光出射侧。
上述第一 滤光膜层 30 和 第二滤光膜层 40 可以为本领域中常见的滤光膜。可选地， 第一 滤光膜层 30 和 第二滤光膜层 40 可以是两层或两层以上由不同光学折射率材料构成的介质膜，例如中空的光学薄片。 第一 滤光膜层 30 和 第二滤光膜层 40 还可以是含有规则排布的光子晶体的光学薄膜，或该光学薄膜与上述不同光学折射率材料介质膜的组合膜。
在另一种优选的实施方式中， 上述 波长转换装置还包括设置于波长转换材料层 10 和第二滤光膜层 40 之间的介质层 50 （其结构如图 2c 所示），介质层 50 的折射率小于波长转换材料层 10 的折射率。 上述介质层50具有较低的折射率，能够 利用全反射将来自波长转换材料层 10 的大角度 光 反射回波长转换材料层 10 ，使没有被波长转换材料层 10 吸收的激发光被二次利用，并将大角度受激光经波长转换材料散射为小角度光出射，从而进一步提高激发光的转换效率和光利用率。上述介质层 50 可以为本领域中常见的具有低折射率的介质材料。可选地，介质层 50 为在波长转换材料层 10 和第二滤光膜层 40 之间形成的空气介质层。
在又一种优选的实施方式中， 上述 波长转换装置还包括设置于波长转换材料层 10 和第二滤光膜层 40 之间的第二导热介质层 60 （其结构如图 2d 所示），第二导热介质层 60 的热导率大于或等于波长转换材料层 10 的热导率，折射率小于波长转换材料层 10 的折射率。上述第二导热介质层 60 具有与本申请上述的第一导热介质层 20 相同的特性。上述波长转换材料层 10 产生的热量能够通过第二导热介质层 60 向波长转换材料层 10 的第二侧传导，使得波长转换材料层 1010 产生的热量更及时 地 传导出去，从而进一步提高了波长转换装置产生的受激光的亮度和稳定性。同时，该第二导热介质层 60 的折射率小于波长转换材料层 10 的折射率， 能够 将来自波长转换材料层 10 的大角度 光 反射回波长转换材料层 10 ，使没有被波长转换材料层 10 吸收的激发光被二次利用，并将大角度受激光经波长转换材料散射为小角度光出射，从而进一步提高了波长转换装置产生的激发光的转换效率和光利用率。
本发明还提供了一种光源系统，包括激发光源和波长转换装置，其中波长转换装置为本发明上述的波长转换装置。该光源系统中波长转换材料层产生的热量 及时地 传导出去，从而提高了波长转换装置产生的受激光的亮度和稳定性，进而使得光源系统的光亮度和稳定性得以提高。
同时，本发明还提供了一种投影系统，包括投影组件和光源系统，其中光源系统为本发明上述的光源系统。该投影系统中光源系统的光亮度和稳定性得以提高，从而满足了投影系统在使用过程中对光亮度的需求。
下面将更详细地描述根据本发明的示例性实施方式。然而，这些示例性实施方式可以由多种不同的形式来实施，并且不应当被解释为只限于这里所阐述的实施方式。应当理解的是，提供这些实施方式是为了使得本发明的公开彻底且完整，并且将这些示例性实施方式的构思充分传达给本领域普通技术人员。
下面将结合实施例进一步说明本发明提供的波长转换装置。
实施例 1
该波长转换装置包括波长转换材料层、设置于波长转换材料层的第一侧的第一滤光膜层、设置于波长转换材料层与第一滤光膜层之间的第一导热介质层、设置于波长转换材料层的第二侧的第二滤光膜层以及设置于波长转换材料层和第二滤光膜层之间的第二导热介质层。其中，波长转换材料层为荧光粉和玻璃粉烧结形成的荧光玻璃，波长转换材料层的热导率为 5.0W/mK ，折射率为 2.2 ； 第一导热介质层是通过在波长转换材料 的第一侧的表面 上丝网印刷金刚石颗粒（平均颗粒粒径为 5 μ m ）并压制，然后采用硅烷偶联剂（ KH560 ）处理金刚石颗粒的表面形成 ；第二导热介质层 是通过在波长转换材料 的第二侧的表面 上丝网印刷金刚石颗粒（平均颗粒粒径为 5 μ m ）并压制，然后采用硅烷偶联剂（ KH560 ）处理金刚石颗粒的表面形成。
该第一导热介质层具有如下特性：第一导热介质层中金刚石颗粒与第一滤光膜层相接触的面积为第一滤光膜层的总面积的 30% ；第一导热介质层的厚度为 3μm ，第一导热介质层的热导率为 12. 8 W/mK ，折射率为 1.4 ；第一导热介质层中金刚石颗粒的表面的硅烷偶联剂（ KH560 ）的体积分数为 1% 。
该第二导热介质层具有如下特性：第二导热介质层中金刚石颗粒与第二滤光膜层相接触的面积为第二滤光膜层的总面积的 30% ；第二导热介质层的厚度为 3μm ，第二导热介质层的热导率为 12. 8 W/mK ，折射率为 1.4 ；第二导热介质层中金刚石颗粒的表面的硅烷偶联剂（ KH560 ）的体积分数为 1% 。
实施例 2
该波长转换装置包括波长转换材料层、设置于波长转换材料层的第一侧的第一滤光膜层、设置于波长转换材料层与第一滤光膜层之间的第一导热介质层、设置于波长转换材料层的第二侧的第二滤光膜层以及设置于波长转换材料层和第二滤光膜层之间的介质层。其中，波长转换材料层为荧光粉与硅胶固化形成的硅胶荧光粉层 ； 第一导热介质层是通过在波长转换材料上刷涂片状的纤维状的碳纳米管（平均粒径为 20 μ m ）并压制，然后采用硅烷偶联剂（ KH560 ）处理碳纳米管的表面形成，波长转换材料层的热导率为 5.0W/mK ，折射率为 2.2 ，介质层为 空气介质层 。
该第一导热介质层具有如下特性：第一导热介质层中碳纳米管与第一滤光膜层相接触的面积为第一滤光膜层的总面积的 20% ；第一导热介质层的厚度为 6 μ m ，第一导热介质层的热导率为 12 .5 W/mK ，折射率为 1. 5 ；第一导热介质层中碳纳米管的表面的硅烷偶联剂（ KH560 ）的体积分数为 0.1% 。
实施例 3
该波长转换装置包括波长转换材料层、设置于波长转换材料层的第一侧的第一滤光膜层、设置于波长转换材料层与第一滤光膜层之间的第一导热介质层以及设置于波长转换材料层的第二侧的第二滤光膜层。其中，波长转换材料层为荧光粉与硅胶固化形成的硅胶荧光粉层，波长转换材料层的热导率为 5.0W/mK ，折射率为 2.2 ； 第一导热介质层是通过在波长转换材料上喷涂金刚石颗粒（平均粒径为 2 μ m ）并压制形成。
该第一导热介质层具有如下特性：第一导热介质层中金刚石颗粒与第一滤光膜层相接触的面积为第一滤光膜层的总面积的 10 % ；第一导热介质层的厚度为 20 μ m ，第一导热介质层的热导率为 12. 4 W/mK ，折射率为 1. 6 。
实施例 4
该波长转换装置包括波长转换材料层、设置于波长转换材料层的第一侧的第一滤光膜层以及设置于波长转换材料层与第一滤光膜层之间的第一导热介质层。其中，波长转换材料层为荧光粉和玻璃粉烧结形成的荧光玻璃，波长转换材料层的热导率为 5.2W/mK ，折射率为 2.3 ； 第一导热介质层是通过在波长转换材料上丝网印刷金刚石颗粒（平均颗粒粒径为 2 μ m ）和玻璃粉并烧结形成。
该第一导热介质层具有如下特性：第一导热介质层中金刚石颗粒与第一滤光膜层相接触的面积为第一滤光膜层的总面积的 50% ；第一导热介质层的厚度为 15 μ m ，第一导热介质层的热导率为 13W/mK ，折射率为 1. 3 。
实施例 5
该波长转换装置包括波长转换材料层、设置于波长转换材料层的第一侧的第一滤光膜层以及设置于波长转换材料层与第一滤光膜层之间的第一导热介质层。其中，波长转换材料层为荧光粉与硅胶固化形成的硅胶荧光粉层，波长转换材料层的热导率为 4.8 W/mK ，折射率为 2.2 ； 第一导热介质层是通过在波长转换材料上喷涂片状的氮化硅颗粒（平均粒径为 0.1 μ m ）并压制形成。
该第一导热介质层具有如下特性：第一导热介质层中氮化硅颗粒与第一滤光膜层相接触的面积为第一滤光膜层的总面积的 8 % ；第一导热介质层的厚度为 40 μ m ，第一导热介质层的热导率为 12W/mK ，折射率为 1. 6 。
对比例 1
该波长转换装置包括：波长转换材料层，依次设置于波长转换材料层一侧的介质层和第一滤光膜层，以及依次设置于波长转换材料层另一侧的介质层和第一滤光膜层。其中，波长转换材料层为荧光粉与硅胶固化形成的硅胶荧光粉层，介质层为 空气介质层 。
测试：对实施例1至5和对比例1提供的 波长转换装置，分别测试其发光强度随激发光的功率之间的变化关系，测试结果如图 3 所示。
从图 3 可以看出， 对实施例1至5和对比例1提供的 波长转换装置，其发光强度都随激发光源功率的增加而增加。当激发光源功率保持固定不变时，实施例 1 至 5 提供的 波长转换装置的发光强度远高于对比例 1 提供的 波长转换装置的发光强度。同时，随着激发光源功率的增加，实施例 1 至 5 提供的 波长转换装置的发光强度呈线性增加，而对比例 1 提供的 波长转换装置的发光强度先增加，随后发生下降。 由 上述分析可以推断出， 实施例1至5提供的 波长转换装置中的导热介质层能够将波长转换材料层产生的热量 及时地 传导出去， 从而提高了 波长转换装置产生的受激光的亮度和稳定性 ，进而 提高了波长转换装置的转换效率。
从以上的描述中，可以看出，本发明上述的实施例实现了如下技术效果：
（ 1 ）在波长转换材料层与第一滤光膜层之间设置导热介质层。该导热介质层的热导率大于或等于波长转换材料层的热导率，能够将波长转换材料层产生的热量 及时地 传导出去，从而提高了波长转换装置产生的受激光的亮度和稳定性。
（ 2 ）同时，该导热介质层的折射率小于波长转换材料层的折射率， 能够 将来自波长转换材料层的大角度 光 （包括激发光）反射回波长转换材料层，使没有被波长转换材料层吸收的激发光被二次利用，从而提高了波长转换装置产生的激发光的转换效率。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (19)

  1. 一种波长转换装置，包括波长转换材料层（ 10 ）和设置于所述波长转换材料层（ 10 ）的第一侧的第一滤光膜层（ 30 ），其特征在于，所述波长转换装置还包括设置于所述波长转换材料层（ 10 ）和所述第一滤光膜层（ 30 ）之间的第一导热介质层（ 20 ），所述第一导热介质层（ 20 ）的热导率大于或等于所述波长转换材料层（ 10 ）的热导率，折射率小于所述波长转换材料层（ 10 ）的折射率。
  2. 根据权利要求 1 所述的波长转换装置，其特征在于，所述第一导热介质层（ 20 ）为包含导热颗粒的多孔结构层。
  3. 根据权利要求 2 所述的波长转换装置，其特征在于，所述第一导热介质层（ 20 ）覆盖所述第一滤光膜层（ 30 ）表面，且所述导热颗粒与所述第一滤光膜层（ 30 ）相接触的面积为所述第一滤光膜层（ 30 ）的总面积的 10%~50% 。
  4. 根据权利要求 2 所述的波长转换装置，其特征在于，所述第一导热介质层（ 20 ）的厚度小于 40μm ，更优选小于 20μm 。
  5. 根据权利要求 2 所述的波长转换装置，其特征在于，所述第一导热介质层（ 20 ）由包含所述导热颗粒和玻璃粉的导热介质组合物组成。
  6. 根据权利要求 2 所述的波长转换装置，其特征在于，所述第一导热介质层（ 20 ）由经硅烷偶联剂处理的所述导热颗粒组成。
  7. 根据权利要求 6 所述的波长转换装置，其特征在于，所述第一导热介质层（ 20 ）中导热颗粒表面的所述硅烷偶联剂的体积分数为 0.1%~1% ，优选所述硅烷偶联剂为 KH550 、 KH560 或 KH570 。
  8. 根据权利要求 2 或 6 所述的波长转换装置，其特征在于，所述波长转换材料层（ 10 ）为荧光粉和硅胶组成的硅胶荧光粉层。
  9. 根据权利要求 2 、 5 或 6 所述的波长转换装置，其特征在于，所述波长转换材料层（ 10 ）为由荧光粉和玻璃粉组成的荧光玻璃。
  10. 根据权利要求 2 所述的波长转换装置，其特征在于，所述导热颗粒的热导率大于 10W/mK 。
  11. 根据权利要求 10 所述的波长转换装置，其特征在于，所述导热颗粒选自金刚石、碳纳米管、石墨烯、氮化铝、氮化硅、碳化硅、氮化硼、氧化铝、氧化锌或硫酸钡中的任一种或多种。
  12. 根据权利要求 10 所述的波长转换装置，其特征在于，所述导热颗粒为片状或纤维状，所述导热颗粒为白色或透明。
  13. 根据权利要求 10 所述的波长转换装置，其特征在于，所述导热颗粒的粒径为 0.1μm~20μm 。
  14. 根据权利要求 1 至 13 中任一项所述的波长转换装置，其特征在于，所述波长转换装置还包括设置于所述波长转换材料层（ 10 ）的第二侧的第二滤光膜层（ 40 ）。
  15. 根据权利要求 14 所述的波长转换装置，其特征在于，所述波长转换装置还包括设置于所述波长转换材料层（ 10 ）和第二滤光膜层（ 40 ）之间的介质层（ 50 ），所述介质层（ 50 ）的折射率小于所述波长转换材料层（ 10 ）的折射率。
  16. 根据权利要求 14 所述的波长转换装置，其特征在于，所述波长转换装置还包括设置于所述波长转换材料层（ 10 ）和第二滤光膜层（ 40 ）之间的第二导热介质层（ 60 ），所述第二导热介质层（ 60 ）的热导率大于或等于所述波长转换材料层（ 10 ）的热导率，折射率小于所述波长转换材料层（ 10 ）的折射率。
  17. 根据权利要求 16 所述的波长转换装置，其特征在于，所述第二导热介质层（ 60 ）具有与所述第一导热介质层（ 20 ）相同的特性。
  18. 一种光源系统，包括激发光源和波长转换装置，其特征在于，所述波长转换装置为权利要求 1 至 17 中任一项所述的波长转换装置。
  19. 一种投影系统，包括投影组件和光源系统，其特征在于，所述光源系统为权利要求 18 所述的光源系统。
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