JP2016515304A - メモリセル、製造方法、半導体デバイス構造、及びメモリシステム - Google Patents
メモリセル、製造方法、半導体デバイス構造、及びメモリシステム Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract
Description
固定領域からの磁気的寄与なしに、部分的な磁気セルコア構造が製造されると、本発明の開示の実施形態に従って製造された自由領域のPMA強度が高められた。部分的な磁気セルコア構造は、以下を含む。すなわち、約50Å(約5.0nm)の厚みを有する導電性シード領域と;約5Å(約0.5nm)の厚みを有し、導電性シード領域の上側にある、CoFeBからなるダミー固定領域と;約12Å(約1.2nm)の厚みを有し、ダミー固定領域の上側にあるMgOからなる非磁性領域と;約10Å(約1.0nm)の厚みを有し、CoFeBからなる下方の磁性サブ領域と、約1.5Å(約0.15nm)の厚みを有し、下方の磁性サブ領域の上側にある、Taからなるスペーサと、約6Å(約0.6nm)の厚みを有し、スペーサの上側にある、下方の磁性サブ領域とわずかにBの組成が異なるCoFeBからなるサブ磁性領域とを含む、非磁性領域の上側にある多材自由領域と;約4Å(約0.4nm)の厚みを有し、多材自由領域の上側にある、Feからなる磁気インタフェース領域と;約7Å(0.7nm)の厚みを有し、磁気インタフェース領域の上側にある、MgOからなるオキサイドキャップ領域と;約500Å(約50nm)の厚みを有し、オキサイドキャップ領域の上側にある、上方導電キャップ領域とを含む。この部分的な磁気セルコア構造は、図11のデータ線1200が示すように、5,007Oe(398.4kA/m)のPMA強度(Hk(Oe)により測定)を示した。これは、Feからなる磁気インタフェース領域を欠いた同一の構造により示された、図11のデータ線1100が示す2,992Oe(238.1kA/m)のPMA強度と比較される。したがって、自由領域の上方に配置されて、オキサイドキャップ領域に隣接する磁気インタフェース領域を備えた磁気セルコア構造では、磁気インタフェース領域を有しない同一構造と比較して、50%超のPMA強度の向上が現れた。
Claims (20)
- 少なくとも1つのメモリセルを含む半導体デバイスであって、
前記少なくとも1つのメモリセルは、基板上にセルコアを含み、
前記セルコアは、
酸化物領域と別の酸化物領域の間の磁性領域であって、垂直な磁場配向を示す前記磁性領域と、
前記酸化物領域と前記別の酸化物領域との間の磁気インタフェース領域と、
を含む
ことを特徴とする半導体デバイス。 - 前記磁性領域は、切り替え可能な垂直な磁場配向を示すように構成されることを特徴とする請求項1に記載の半導体デバイス。
- 前記磁気インタフェース領域は、前記磁性領域と前記酸化物領域及び前記別の酸化物領域のうちの1つとの間に直接に配置されることを特徴とする請求項1に記載の半導体デバイス。
- 前記セルコアは、前記酸化物領域及び前記別の酸化物領域のうちの1つにより前記磁性領域から隔てられた別の磁性領域を更に含むことを特徴とする請求項1に記載の半導体デバイス。
- 前記磁気インタフェース領域は、前記磁性領域及び前記別の磁性領域の上方に配置されることを特徴とする請求項4に記載の半導体デバイス。
- 前記磁性領域は、鉄と、コバルト及びホウ素のうちの少なくとも1つとを含むことを特徴とする請求項1に記載の半導体デバイス。
- 前記磁気インタフェース領域は、鉄からなることを特徴とする請求項1に記載の半導体デバイス。
- 前記磁気インタフェース領域は、前記磁性領域内に配置されることを特徴とする請求項1に記載の半導体デバイス。
- 前記磁気インタフェース領域は、前記磁性領域の磁性サブ領域の間に配置されることを特徴とする請求項8に記載の半導体デバイス。
- 前記セルコアは、別の磁気インタフェース領域を更に含むことを特徴とする請求項1に記載の半導体デバイス。
- 前記磁性領域は、約4,000エルステッド(約318.3kA/m)を超える垂直磁気異方性を示すことを特徴とする請求項1に記載の半導体デバイス。
- 前記セルコアは、固定された垂直な磁場配向を示す別の磁性領域を更に含み、
前記磁気インタフェース領域は、前記磁性領域及び前記別の磁性領域のうちの1つによって、前記酸化物領域及び前記別の酸化物領域のうちの1つから隔てられる
ことを特徴とする請求項1に記載の半導体デバイス。 - 前記酸化物領域及び前記別の酸化物領域のうちの少なくとも1つは、マグネシウム、アルミニウム、またはチタンの酸化物を含むことを特徴とする請求項1に記載の半導体デバイス。
- 前記磁気インタフェース領域は、約3オングストローム(約0.3nm)から約4オングストローム(約0.4nm)の厚みを有することを特徴とする請求項1に記載の半導体デバイス。
- 前記セルコアは、
別の磁性領域と、
前記磁性領域及び前記別の磁性領域のうちの少なくとも1つと接触する別の磁気インタフェース領域と、
を更に含むことを特徴とする請求項1に記載の半導体デバイス。 - 前記少なくとも1つのメモリセルは、アレイにメモリセルを含むことを特徴とする請求項1から15のいずれか1項に記載の半導体デバイス。
- 前記磁気セルコアと動作可能に通信する導電材料を更に含むことを特徴とする請求項1から15のいずれか1項に記載の半導体デバイス。
- メモリセルを作成する方法であって、
基板の上方に酸化物材料を形成し、
前記酸化物材料の上方に磁性材料を形成し、
前記磁性材料の上方に別の酸化物材料を形成し、
前記磁性材料と前記酸化物材料及び前記別の酸化物材料のうちの1つとの間に鉄系材料を形成し、
前記酸化物材料、前記磁性材料、前記別の酸化物材料、及び前記鉄系材料をパターニングして、前記酸化物材料からのトンネル接合領域と、前記磁性材料からの自由領域及び固定領域のうちの1つと、前記鉄系材料からの磁気インタフェース領域と、前記別の酸化物材料からのオキサイドキャップ領域とを含む磁気セルコアを形成すること
を含み、
前記磁性材料は、垂直な磁場配向を示す、ことを特徴とする方法。 - 前記酸化物材料、前記磁性材料、前記別の酸化物材料、及び前記鉄系材料をアニーリングすることを更に含むことを特徴とする請求項18に記載の方法。
- 前記鉄系材料を形成することは、マグネトロンスパッタリングにより前記鉄系材料を形成することを含むことを特徴とする請求項18または19に記載の方法。
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US13/797,185 US9379315B2 (en) | 2013-03-12 | 2013-03-12 | Memory cells, methods of fabrication, semiconductor device structures, and memory systems |
US13/797,185 | 2013-03-12 | ||
PCT/US2014/022555 WO2014164482A1 (en) | 2013-03-12 | 2014-03-10 | Memory cells, methods of fabrication, semiconductor device structures, and memory systems |
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EP (1) | EP2973574B1 (ja) |
JP (1) | JP6159009B2 (ja) |
KR (2) | KR102039280B1 (ja) |
CN (2) | CN105074829B (ja) |
TW (1) | TWI555173B (ja) |
WO (1) | WO2014164482A1 (ja) |
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KR102039280B1 (ko) | 2019-10-31 |
KR20150123893A (ko) | 2015-11-04 |
US20180233657A1 (en) | 2018-08-16 |
US10276781B2 (en) | 2019-04-30 |
TW201448170A (zh) | 2014-12-16 |
CN108198584B (zh) | 2021-11-05 |
EP2973574B1 (en) | 2020-09-02 |
US20160308118A1 (en) | 2016-10-20 |
KR101831504B1 (ko) | 2018-02-26 |
US10651367B2 (en) | 2020-05-12 |
US9972770B2 (en) | 2018-05-15 |
US9379315B2 (en) | 2016-06-28 |
JP6159009B2 (ja) | 2017-07-05 |
EP2973574A1 (en) | 2016-01-20 |
CN105074829A (zh) | 2015-11-18 |
EP2973574A4 (en) | 2016-11-23 |
CN108198584A (zh) | 2018-06-22 |
US20140264663A1 (en) | 2014-09-18 |
WO2014164482A1 (en) | 2014-10-09 |
TWI555173B (zh) | 2016-10-21 |
US20190097125A1 (en) | 2019-03-28 |
CN105074829B (zh) | 2018-03-27 |
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