JP2016171293A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP2016171293A JP2016171293A JP2015051892A JP2015051892A JP2016171293A JP 2016171293 A JP2016171293 A JP 2016171293A JP 2015051892 A JP2015051892 A JP 2015051892A JP 2015051892 A JP2015051892 A JP 2015051892A JP 2016171293 A JP2016171293 A JP 2016171293A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- type
- layer
- semiconductor device
- mask material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 89
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 89
- 239000012535 impurity Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims description 64
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 238000005468 ion implantation Methods 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 4
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical group [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000006866 deterioration Effects 0.000 abstract description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 115
- 229910010271 silicon carbide Inorganic materials 0.000 description 115
- 238000000034 method Methods 0.000 description 15
- 230000007547 defect Effects 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004645 scanning capacitance microscopy Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
- H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0495—Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
- H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
本実施形態の半導体装置は、n型のSiC基板と、SiC基板上に設けられ、第1の表面を有し、SiC基板よりもn型不純物濃度の低いn型のSiC層と、SiC層の第1の表面に設けられる複数のp型の第1のSiC領域と、第1のSiC領域のそれぞれの中に設けられ、第1のSiC領域よりもp型不純物濃度の高い複数のp型の第2のSiC領域と、第2のSiC領域のそれぞれの上に設けられ、第2のSiC領域の反対側に第2の表面を有し、SiC基板から第2の表面までの距離とSiC基板から第1の表面までの距離の差分が0.2μm以下である複数のシリサイド層と、SiC層とシリサイド層に接して設けられる第1の電極と、SiC基板に接して設けられる第2の電極と、を備える。
第2のマスク材32は、例えば、CVD法により形成されるシリコン酸化膜である。
本実施形態の半導体装置は、シリサイド層の側面と第1のSiC領域との間に設けられる絶縁膜を、更に備えること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
第2のマスク材32は、例えば、CVD法により形成されるシリコン酸化膜である。
本実施形態の半導体装置は、n型のSiC基板と、SiC基板上に設けられ、第1の表面を有し、SiC基板よりもn型不純物濃度の低いn型のSiC層と、SiC層の表面に設けられるp型の第1のSiC領域と、第1のSiC領域内に設けられ、第1のSiC領域よりもp型不純物濃度の高い複数のp型の第2のSiC領域と、第2のSiC領域のそれぞれの上に設けられ、第2のSiC領域の反対側に第2の表面を有する複数のシリサイド層と、SiC層とシリサイド層に接して設けられる第1の電極と、SiC基板に接して設けられる第2の電極と、を備える。
本実施形態の半導体装置は、n型のSiC基板と、SiC基板上に設けられ、第1の表面を有し、SiC基板よりもn型不純物濃度の低いn型のSiC層と、SiC層の表面に設けられるp型の第1のSiC領域と、第1のSiC領域内に設けられ、第1のSiC領域よりもp型不純物濃度の高いp型の第2のSiC領域と、第2のSiC領域上に設けられ、第2のSiC領域の反対側に第2の表面を有する複数のシリサイド層と、SiC層とシリサイド層に接して設けられる第1の電極と、SiC基板に接して設けられる第2の電極と、を備える。
12 n−型のドリフト層(SiC層)
14 p型の第1のアノード領域(第1のSiC領域)
18 p+型の第2のアノード領域(第2のSiC領域)
20 シリサイド層
24 アノード電極(第1の電極)
26 カソード電極(第2の電極)
40 第2の側壁(絶縁膜)
100 MPS(半導体装置)
200 MPS(半導体装置)
300 MPS(半導体装置)
400 MPS(半導体装置)
Claims (17)
- n型のSiC基板と、
前記SiC基板上に設けられ、第1の表面を有し、前記SiC基板よりもn型不純物濃度の低いn型のSiC層と、
前記SiC層の前記第1の表面に設けられる複数のp型の第1のSiC領域と、
前記第1のSiC領域のそれぞれの中に設けられ、前記第1のSiC領域よりもp型不純物濃度の高い複数のp型の第2のSiC領域と、
前記第2のSiC領域のそれぞれの上に設けられ、前記第2のSiC領域の反対側に第2の表面を有し、前記SiC基板から前記第2の表面までの距離と前記SiC基板から前記第1の表面までの距離の差分が0.2μm以下である複数のシリサイド層と、
前記SiC層と前記シリサイド層に接して設けられる第1の電極と、
前記SiC基板に接して設けられる第2の電極と、
を備える半導体装置。 - 前記シリサイド層の側面と前記第1のSiC領域との間に設けられる絶縁膜を、更に備える請求項1記載の半導体装置。
- 前記差分が−0.1μm以上0.1μm以下である請求項1又は請求項2記載の半導体装置。
- 前記シリサイド層はニッケルシリサイド層である請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記絶縁膜はシリコン酸化膜である請求項2記載の半導体装置。
- n型のSiC基板と、
前記SiC基板上に設けられ、第1の表面を有し、前記SiC基板よりもn型不純物濃度の低いn型のSiC層と、
前記SiC層の前記第1の表面に設けられるp型の第1のSiC領域と、
前記第1のSiC領域内に設けられ、前記第1のSiC領域よりもp型不純物濃度の高い複数のp型の第2のSiC領域と、
前記第2のSiC領域のそれぞれの上に設けられ、前記第2のSiC領域の反対側に第2の表面を有する複数のシリサイド層と、
前記SiC層と前記シリサイド層に接して設けられる第1の電極と、
前記SiC基板に接して設けられる第2の電極と、
を備える半導体装置。 - 前記SiC基板から前記第2の表面までの距離と前記SiC基板から前記第1の表面までの距離の差分が0.2μm以下である請求項6記載の半導体装置。
- 前記差分が−0.1μm以上0.1μm以下である請求項7記載の半導体装置。
- 前記シリサイド層はニッケルシリサイド層である請求項6乃至請求項8いずれか一項記載の半導体装置。
- n型のSiC基板と、
前記SiC基板上に設けられ、第1の表面を有し、前記SiC基板よりもn型不純物濃度の低いn型のSiC層と、
前記SiC層の前記第1の表面に設けられるp型の第1のSiC領域と、
前記第1のSiC領域内に設けられ、前記第1のSiC領域よりもp型不純物濃度の高いp型の第2のSiC領域と、
前記第2のSiC領域上に設けられ、前記第2のSiC領域の反対側に第2の表面を有する複数のシリサイド層と、
前記SiC層と前記シリサイド層に接して設けられる第1の電極と、
前記SiC基板に接して設けられる第2の電極と、
を備える半導体装置。 - 前記SiC基板から前記第2の表面までの距離と前記SiC基板から前記第1の表面までの距離の差分が0.2μm以下である請求項10記載の半導体装置。
- 前記差分が−0.1μm以上0.1μm以下である請求項11記載の半導体装置。
- 前記シリサイド層はニッケルシリサイド層である請求項10乃至請求項12いずれか一項記載の半導体装置。
- n型のSiC層上に第1のマスク材を形成し、
前記第1のマスク材をエッチングして開口部を形成し、
前記第1のマスク材をマスクに前記SiC層内にp型不純物を注入する第1のイオン注入を行い、
前記第1のマスク材上に前記開口部の幅の半分未満の膜厚の第2のマスク材を形成し、
前記第2のマスク材をエッチングして前記開口部の側面に側壁を形成し、
前記第1のマスク材及び前記側壁をマスクに前記SiC層をエッチングして溝を形成し、
前記第1のマスク材及び前記側壁をマスクに前記SiC層内にp型不純物を注入する第2のイオン注入を行い、
前記SiC層上に第1の金属膜を形成し、
熱処理により前記第1の金属膜と前記SiC層を反応させてシリサイド層を形成し、
未反応の前記第1の金属膜を除去し、
前記第1のマスク材及び前記側壁を除去し、
前記SiC層及び前記シリサイド層上に第2の金属膜を形成する半導体装置の製造方法。 - 前記金属膜はニッケル膜である請求項14記載の半導体装置の製造方法。
- n型のSiC層上に第1のマスク材を形成し、
前記第1のマスク材をエッチングして開口部を形成し、
前記第1のマスク材をマスクに前記SiC層をエッチングして溝を形成し、
前記第1のマスク材をマスクに前記SiC層内にp型不純物を注入する第1のイオン注入を行い、
前記第1のマスク材上に前記開口部の幅の半分未満の膜厚の第2のマスク材を形成し、
前記第2のマスク材をエッチングして前記開口部の側面に第1の側壁を形成し、
前記第1のマスク材及び前記第1の側壁をマスクに前記SiC層内にp型不純物を注入する第2のイオン注入を行い、
前記SiC層上に第1の金属膜を形成し、
熱処理により前記第1の金属膜と前記SiC層を反応させてシリサイド層を形成し、
未反応の前記第1の金属膜を除去し、
前記第1のマスク材と前記第1の側壁の一部を除去し、前記溝の側面に第2の側壁を形成し、
前記SiC層及び前記シリサイド層上に第2の金属膜を形成する半導体装置の製造方法。 - 前記金属膜はニッケル膜である請求項16記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015051892A JP6363541B2 (ja) | 2015-03-16 | 2015-03-16 | 半導体装置及びその製造方法 |
CN201510556172.1A CN105990456B (zh) | 2015-03-16 | 2015-09-02 | 半导体装置及其制造方法 |
TW104128908A TWI597852B (zh) | 2015-03-16 | 2015-09-02 | Semiconductor device and method of manufacturing the same |
US14/854,738 US9748342B2 (en) | 2015-03-16 | 2015-09-15 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015051892A JP6363541B2 (ja) | 2015-03-16 | 2015-03-16 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016171293A true JP2016171293A (ja) | 2016-09-23 |
JP6363541B2 JP6363541B2 (ja) | 2018-07-25 |
Family
ID=56925588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015051892A Active JP6363541B2 (ja) | 2015-03-16 | 2015-03-16 | 半導体装置及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9748342B2 (ja) |
JP (1) | JP6363541B2 (ja) |
CN (1) | CN105990456B (ja) |
TW (1) | TWI597852B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019153676A (ja) * | 2018-03-02 | 2019-09-12 | 株式会社東芝 | 半導体装置 |
JP2021118192A (ja) * | 2020-01-22 | 2021-08-10 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP7427886B2 (ja) | 2019-09-06 | 2024-02-06 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9960247B2 (en) * | 2016-01-19 | 2018-05-01 | Ruigang Li | Schottky barrier structure for silicon carbide (SiC) power devices |
US9666482B1 (en) * | 2016-09-14 | 2017-05-30 | Infineon Technologies Ag | Self aligned silicon carbide contact formation using protective layer |
WO2018117061A1 (ja) * | 2016-12-19 | 2018-06-28 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
TWI630700B (zh) * | 2017-05-10 | 2018-07-21 | 新唐科技股份有限公司 | 半導體元件 |
CN109473482A (zh) * | 2017-09-08 | 2019-03-15 | 创能动力科技有限公司 | 肖特基器件及其制造方法 |
JP6995725B2 (ja) * | 2018-09-19 | 2022-01-17 | 株式会社東芝 | 半導体装置 |
CN111192825B (zh) * | 2018-12-12 | 2023-08-04 | 深圳方正微电子有限公司 | 碳化硅肖特基二极管及其制造方法 |
JP7371484B2 (ja) * | 2019-12-18 | 2023-10-31 | Tdk株式会社 | ショットキーバリアダイオード |
CN113299732A (zh) * | 2020-02-24 | 2021-08-24 | 珠海格力电器股份有限公司 | 半导体器件、芯片、设备和制造方法 |
US11437525B2 (en) | 2020-07-01 | 2022-09-06 | Hunan Sanan Semiconductor Co., Ltd. | Silicon carbide power diode device and fabrication method thereof |
EP3933934A1 (en) | 2020-07-01 | 2022-01-05 | Xiamen Sanan Integrated Circuit Co., Ltd | Silicon carbide power diode device and fabrication method thereof |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63308387A (ja) * | 1987-06-10 | 1988-12-15 | Nippon Denso Co Ltd | 半導体装置の製造方法 |
JPH0897170A (ja) * | 1994-09-23 | 1996-04-12 | Siemens Ag | 金属化層と半導体材料との間の低オーム接触の形成方法 |
JP2004006723A (ja) * | 2002-03-25 | 2004-01-08 | Toshiba Corp | 高耐圧半導体装置及びその製造方法 |
JP2006024880A (ja) * | 2004-06-09 | 2006-01-26 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2012129299A (ja) * | 2010-12-14 | 2012-07-05 | Nissan Motor Co Ltd | 異種材料接合型ダイオード及びその製造方法 |
JP2012182404A (ja) * | 2011-03-03 | 2012-09-20 | Toshiba Corp | 半導体整流装置 |
JP2012190909A (ja) * | 2011-03-09 | 2012-10-04 | Showa Denko Kk | 炭化珪素半導体装置及びその製造方法 |
JP2013058603A (ja) * | 2011-09-08 | 2013-03-28 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001308107A (ja) | 2000-04-20 | 2001-11-02 | Matsushita Electronics Industry Corp | ゲート絶縁型半導体装置およびその製造方法 |
US6855970B2 (en) * | 2002-03-25 | 2005-02-15 | Kabushiki Kaisha Toshiba | High-breakdown-voltage semiconductor device |
JP4463482B2 (ja) * | 2002-07-11 | 2010-05-19 | パナソニック株式会社 | Misfet及びその製造方法 |
JP5787655B2 (ja) * | 2010-11-26 | 2015-09-30 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
US8937319B2 (en) * | 2011-03-07 | 2015-01-20 | Shindengen Electric Manufacturing Co., Ltd. | Schottky barrier diode |
JP2012186369A (ja) | 2011-03-07 | 2012-09-27 | Panasonic Corp | 半導体装置およびその製造方法 |
JP6176817B2 (ja) | 2011-10-17 | 2017-08-09 | ローム株式会社 | チップダイオードおよびダイオードパッケージ |
-
2015
- 2015-03-16 JP JP2015051892A patent/JP6363541B2/ja active Active
- 2015-09-02 CN CN201510556172.1A patent/CN105990456B/zh active Active
- 2015-09-02 TW TW104128908A patent/TWI597852B/zh active
- 2015-09-15 US US14/854,738 patent/US9748342B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63308387A (ja) * | 1987-06-10 | 1988-12-15 | Nippon Denso Co Ltd | 半導体装置の製造方法 |
JPH0897170A (ja) * | 1994-09-23 | 1996-04-12 | Siemens Ag | 金属化層と半導体材料との間の低オーム接触の形成方法 |
JP2004006723A (ja) * | 2002-03-25 | 2004-01-08 | Toshiba Corp | 高耐圧半導体装置及びその製造方法 |
JP2006024880A (ja) * | 2004-06-09 | 2006-01-26 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2012129299A (ja) * | 2010-12-14 | 2012-07-05 | Nissan Motor Co Ltd | 異種材料接合型ダイオード及びその製造方法 |
JP2012182404A (ja) * | 2011-03-03 | 2012-09-20 | Toshiba Corp | 半導体整流装置 |
JP2012190909A (ja) * | 2011-03-09 | 2012-10-04 | Showa Denko Kk | 炭化珪素半導体装置及びその製造方法 |
JP2013058603A (ja) * | 2011-09-08 | 2013-03-28 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019153676A (ja) * | 2018-03-02 | 2019-09-12 | 株式会社東芝 | 半導体装置 |
JP7427886B2 (ja) | 2019-09-06 | 2024-02-06 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
JP2021118192A (ja) * | 2020-01-22 | 2021-08-10 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP7371507B2 (ja) | 2020-01-22 | 2023-10-31 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US9748342B2 (en) | 2017-08-29 |
JP6363541B2 (ja) | 2018-07-25 |
US20160276442A1 (en) | 2016-09-22 |
CN105990456A (zh) | 2016-10-05 |
TWI597852B (zh) | 2017-09-01 |
CN105990456B (zh) | 2019-12-20 |
TW201635560A (zh) | 2016-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6363541B2 (ja) | 半導体装置及びその製造方法 | |
JP6400544B2 (ja) | 半導体装置 | |
US8304901B2 (en) | Semiconductor device having a groove and a junction termination extension layer surrounding a guard ring layer | |
US7816733B2 (en) | SiC semiconductor having junction barrier schottky device | |
JP6287857B2 (ja) | ショットキーダイオード | |
US8643091B2 (en) | Semiconductor device | |
JP5665912B2 (ja) | 半導体装置及びその製造方法 | |
JP2017168663A (ja) | 半導体装置 | |
JP6457363B2 (ja) | 半導体装置 | |
JP2012129299A (ja) | 異種材料接合型ダイオード及びその製造方法 | |
US9960228B2 (en) | Wide gap semiconductor device and method of manufacturing the same | |
JP2019216223A (ja) | 半導体装置 | |
US9006746B2 (en) | Schottky barrier diode and method for manufacturing schottky barrier diode | |
JP2016174032A (ja) | 半導体装置及びその製造方法 | |
JP2012238898A (ja) | ワイドバンドギャップ半導体縦型mosfet | |
JP2017055026A (ja) | 半導体装置 | |
JP2012182405A (ja) | 半導体整流装置 | |
JP5607120B2 (ja) | 炭化珪素ショットキダイオード | |
JP2016092168A (ja) | 炭化珪素半導体装置 | |
JP7284721B2 (ja) | ダイオード | |
JP7257912B2 (ja) | 半導体装置 | |
US20160276441A1 (en) | Semiconductor device | |
JP2015225934A (ja) | 半導体装置 | |
TWI685977B (zh) | 寬帶隙半導體裝置 | |
JP2023005783A (ja) | ダイオード |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170227 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20170914 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20170915 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170928 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171031 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171214 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180529 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180628 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6363541 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |