JP2016148834A - シリコンパッシベーションの改善された半水性フォトレジスト又は半導体製造残留物剥離及び洗浄用組成物 - Google Patents
シリコンパッシベーションの改善された半水性フォトレジスト又は半導体製造残留物剥離及び洗浄用組成物 Download PDFInfo
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- JP2016148834A JP2016148834A JP2015248477A JP2015248477A JP2016148834A JP 2016148834 A JP2016148834 A JP 2016148834A JP 2015248477 A JP2015248477 A JP 2015248477A JP 2015248477 A JP2015248477 A JP 2015248477A JP 2016148834 A JP2016148834 A JP 2016148834A
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- 238000010894 electron beam technology Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
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- 230000002538 fungal effect Effects 0.000 description 1
- XPFVYQJUAUNWIW-UHFFFAOYSA-N furfuryl alcohol Chemical compound OCC1=CC=CO1 XPFVYQJUAUNWIW-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003966 growth inhibitor Substances 0.000 description 1
- 239000002920 hazardous waste Substances 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
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- 238000002347 injection Methods 0.000 description 1
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- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004811 liquid chromatography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- JPMIIZHYYWMHDT-UHFFFAOYSA-N octhilinone Chemical compound CCCCCCCCN1SC=CC1=O JPMIIZHYYWMHDT-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
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- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 1
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- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- YMBCJWGVCUEGHA-UHFFFAOYSA-M tetraethylammonium chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC YMBCJWGVCUEGHA-UHFFFAOYSA-M 0.000 description 1
- AGGKEGLBGGJEBZ-UHFFFAOYSA-N tetramethylenedisulfotetramine Chemical compound C1N(S2(=O)=O)CN3S(=O)(=O)N1CN2C3 AGGKEGLBGGJEBZ-UHFFFAOYSA-N 0.000 description 1
- FBEVECUEMUUFKM-UHFFFAOYSA-M tetrapropylazanium;chloride Chemical compound [Cl-].CCC[N+](CCC)(CCC)CCC FBEVECUEMUUFKM-UHFFFAOYSA-M 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D7/261—Alcohols; Phenols
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- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D7/26—Organic compounds containing oxygen
- C11D7/267—Heterocyclic compounds
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
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- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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Abstract
【解決手段】水、1又は複数のアルカリ化合物、1又は複数の腐食阻害剤、及び1又は複数の抗酸化剤の1又は複数の酸化生成物を含む、フォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物、その組成物を製造する方法、及びその組成物を用いる方法が提供される。
【選択図】なし
Description
発明の背景
本発明は、フォトレジスト、フォトレジスト残留物、及び他の残留物をシリコンウェーハから剥離するのに特に有用な半水性剥離用組成物の改善に関する。
本発明は、以上に述べた腐食の短所又は欠点が除外された又は実質的に除去された適切な剥離用及び洗浄用組成物を提供する。本発明は、シリコンウェーハの暴露された部分(例えば裏面)のエッチングを低減する。一つの態様において、本発明は、水及び1又は複数のアルカリ化合物、少なくとも1つの腐食阻害剤、及び1又は複数の抗酸化剤の1又は複数の酸化画分(本明細書中で酸化生成物とも呼ばれる)を含む、フォトレジスト剥離用及び洗浄用組成物を備える。本発明の別の態様において、本発明の1又は複数のアルカリ化合物は、1又は複数のアミン又は1又は複数の第4級アンモニウム水酸化物又はそれらの組み合わせを含んでよい。本発明の組成物において、単独又は本発明の他の態様とともに、1又は複数の腐食阻害剤は、1又は複数の抗酸化剤腐食阻害剤を含んでよい。本発明の組成物は、単独又は本発明の追加の態様とともに、1又は複数の抗酸化剤腐食阻害剤を酸化することにより形成される、1又は複数の抗酸化剤の1又は複数の酸化生成物を含んでよい。本発明の一つの態様において、単独又は本発明の他の態様と組み合わせて、1又は複数の抗酸化剤の1又は複数の酸化生成物は、酸素含有ガス、過酸化物又はニトラートを前記組成物に添加することにより、又は前記組成物を通して酸素含有ガスをバブリングすることにより、インシトゥで形成された。本発明の別の態様において、組成物は、単独又は他の態様とともに、カテコール、t−ブチルカテコール、レゾルシノール、ピロガロール、没食子酸、没食子酸のエステル及びアスコルビン酸からなる群より選択される1又は複数の抗酸化剤腐食阻害剤を含む、又は没食子酸及びカテコールから選択してよい。本発明の別の態様において、組成物は、単独又は他の態様とともに、1又は複数のパッシベーション腐食阻害剤を含む又はさらに含む。本発明の別の態様において、本発明の前記組成物中の1又は複数のアルカリ化合物は、単独又は他の態様とともに、1又は複数のアミン又は1又は複数の第4級アンモニウム水酸化物又は1又は複数のアミン又は1又は複数の第4級アンモニウム水酸化物の混合物を含む群から選択される。本発明の別の態様において、本発明の組成物は、単独又は本発明の他の態様のうち任意のものとともに、1又は複数のパッシベーション腐食阻害剤を有してよい。この1又は複数のパッシベーション腐食阻害剤は、トリアゾール、及び約4〜約7の範囲のpHを有する弱酸、からなる群より選択してよい、又はアントラニル酸、安息香酸、イソフタル酸、マレイン酸、フマル酸、D,L−リンゴ酸、マロン酸、フタル酸、無水マレイン酸、無水フタル酸、ベンゾトリアゾール(BZT)、カルボキシベンゾトリアゾール、ジエチルヒドロキシルアミン、それらの乳酸及びクエン酸塩、ピロガロール、フルクトース、チオ硫酸アンモニウム、グリシン、乳酸、テトラメチルグアニジン、イミノ二酢酸、及びジメチルアセトアセトアミド、トリヒドロキシベンゼン、ジヒドロキシベンゼン、及びサリチルヒドロキサム酸からなる群より選択してよい。
本発明の剥離用及び洗浄用組成物は好ましくは、水、1又は複数のアルカリ化合物、少なくとも1つの腐食阻害剤、及び1又は複数の抗酸化剤の1又は複数の酸化画分の混合物を含む。アルカリ化合物は、1又は複数のアミン又は1又は複数の第4級アンモニウム水酸化物、又は1又は複数のアミンと1又は複数の第4級アンモニウム水酸化物の混合物であってよい。この1又は複数のアミンは、1又は複数の有機アミン又は1又は複数の無機アミンであってよく、又は1又は複数の有機アミン又は1又は複数の無機アミンを含んでよい。
組成物Bは、水、アルカリ化合物として2(メチルアミノ)エタノールとヒドロキシルアミンの質量比3.3の混合物、及び抗酸化剤腐食阻害剤としてカテコール、を含有していた。組成物Cは、水、アルカリ化合物としてモノイソプロパノールアミンとヒドロキシルアミンの質量比3.3の混合物、及び抗酸化剤腐食阻害剤としてカテコール、を含有していた。組成物Dは、水、アルカリ化合物としてモノエタノールアミンとヒドロキシルアミンの質量比3.4の混合物、及び抗酸化剤腐食阻害剤としてカテコール、を含有していた。組成物Eは、水、アルカリ化合物としてモノエタノールアミンとヒドロキシルアミンの質量比3.4の混合物、及び抗酸化剤腐食阻害剤として没食子酸、を含有していた。組成物Fは、水、アルカリ化合物として2(メチルアミノ)エタノール、抗酸化剤腐食阻害剤としてカテコール、及びパッシベーション腐食阻害剤としてベンゾトリアゾール、を含有していた。(注意:ヒドロキシルアミンを含有する洗浄用組成物において、50%のヒドロキシルアミン水溶液を用いた。洗浄用組成物中の水の量は、洗浄用組成物を作製するのに用いられるヒドロキシルアミン水溶液中に存在する水と同量であった。)
Claims (24)
- 水、1又は複数のアルカリ化合物、1又は複数の腐食阻害剤、及び1又は複数の抗酸化剤の1又は複数の酸化生成物を含む、フォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記1又は複数の腐食阻害剤が1又は複数の抗酸化剤腐食阻害剤を含む、請求項1に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記1又は複数の抗酸化剤の1又は複数の酸化生成物が、前記1又は複数の抗酸化剤腐食阻害剤を酸化することにより形成される、請求項2に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記1又は複数の抗酸化剤の1又は複数の酸化生成物が、酸素含有ガス、過酸化物又はニトラートを前記組成物に添加することによりインシトゥで形成された、請求項2に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記1又は複数の抗酸化剤腐食阻害剤が、カテコール、t−ブチルカテコール、レゾルシノール、ピロガロール、没食子酸、没食子酸のエステル及びアスコルビン酸からなる群より選択される、請求項2に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 1又は複数のパッシベーション腐食阻害剤をさらに含む、請求項2に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記1又は複数のパッシベーション腐食阻害剤が、アントラニル酸、安息香酸、イソフタル酸、マレイン酸、フマル酸、D,L−リンゴ酸、マロン酸、フタル酸、無水マレイン酸、無水フタル酸、ベンゾトリアゾール(BZT)、カルボキシベンゾトリアゾール、ジエチルヒドロキシルアミン、それらの乳酸及びクエン酸塩、ピロガロール、フルクトース、チオ硫酸アンモニウム、グリシン、乳酸、テトラメチルグアニジン、イミノ二酢酸、及びジメチルアセトアセトアミド、トリヒドロキシベンゼン、ジヒドロキシベンゼン、及びサリチルヒドロキサム酸からなる群より選択される、請求項6に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記1又は複数のアルカリ化合物が、ヘキシルアミン、5−アミノ−2−メチルペンタン、ヘプチルアミン、オクチルアミン、ノニルアミン、デシルアミン、ジプロピルアミン、ジイソプロピルアミン、ジブチルアミン、ジイソブチルアミン、ジ−n−ブチルアミン、ジ−t−ブチルアミン、ジペンチルアミン、ジヘキシルアミン、ジヘプチルアミン、ジオクチルアミン、ジノニルアミン、ジデシルアミン、アミルメチルアミン、メチルイソアミルアミン、トリプロピルアミン、トリブチルアミン、トリペンチルアミン、ジメチルエチルアミン、メチルジエチルアミン、メチルジプロピルアミン、N−エチリデンメチルアミン、N−エチリデンエチルアミン、N−エチリデンプロピルアミン、N−ブチルアミンエチリデン、アルカノールアミン、エタノールアミン、N−メチルエタノールアミン、N−エチルエタノールアミン、N−プロピルエタノールアミン、N−ブチルエタノールアミン、ジエタノールアミン、1−アミノ−2−プロパノール、N−メチルアミンイソプロパノール、N−エチル−イソプロパノールアミン、N−プロピルイソプロパノールアミン、2−アミノプロパン−1−オール、N−メチル−2−アミノプロパン−1−オール、N−エチル−2−アミノプロパン−1−オール、1−アミノプロパン−3−オール、N−メチル−1−アミノプロパン−3−オール、N−エチル−1−アミノプロパン−3−オール、1−アミノブタン−2−オール、N−メチル−1−アミノブタン−2−オール、N−エチル−1−アミノブタン−2−オール、2−アミノブタン−1−オール、N−メチル−2−アミノブタン−1−オール、N−エチル−2−アミノブタン−1−オール、N−ヒドロキシ−メチルエタノールアミン、N−ヒドロキシメチルエチレンジアミン、N,N’−ビス(ヒドロキシメチル)エチレンジアミン、N−ヒドロキシメチルプロパノールアミン、エチレンジアミン、プロピレンジアミン、トリメチレンジアミン、テトラメチレンジアミン、1,3−ジアミノブタン、2,3−ジアミノブタン、ペンタメチレンジアミン、2,4−ジアミノペンタン、ヘキサメチレンジアミン、ヘプタメチレンジアミン、オクタメチレンジアミン、ノナメチレンジアミン、N−メチルエチレンジアミン、N,N−ジメチルエチレンジアミン、トリメチルエチレンジアミン、N−エチルエチレンジアミン、N,N−ジエチルエチレンジアミン、トリエチルエチレンジアミン、1,2,3−トリアミノプロパン、ヒドラジン、トリス(2−アミノエチル)アミン、テトラ(アミノメチル)メタン、ジエチレントリアミン、トリエチレンテトラミン、テトラエチルペンタミン、ヘプタエチレンオクタミン、ノナエチレンデカミン、ジアザビシクロウンデセン、ヒドロキシルアミン、N−メチルヒドロキシルアミン、N−エチルヒドロキシルアミン、N,N−ジエチルヒドロキシルアミン、モルホリン、及びN−メチルエタノールアミン(NMEA)、モノエタノールアミン(MEA)、ジエタノールアミン、モノ−、ジ−及びトリイソプロパノールアミン、2−(2−アミノエチルアミノ)エタノール、2−(2−アミノエトキシ)エタノール、トリエタノールアミン、からなる群より選択される1又は複数のアミンを含む、請求項1に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記アルカリ化合物が、1〜5の炭素原子を有する第1級、第2級及び第3級アルカノールアミンからなる群より選択される、請求項1に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記アルカリ化合物が、モルホリン、シクロヘキシルアミン、ピペリジンアルキルアミン(ここで該アルキル基は1〜5の炭素を有する)及びアルキレンジアミン(1〜5の炭素を有する)からなる群より選択される1又は複数のアミンを含む、請求項1に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記アルカリ化合物が、アルカノールアミン、ヒドロキシルアミン及びアルカノールアミンとヒドロキシルアミンの混合物からなる群より選択される、1又は複数のアミンを含む、請求項1に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記アルカリ化合物が、式[N−R1R2R3R4]+OH-(式中、R1、R2、R3、及びR4がそれぞれ独立してアルキル基、ヒドロキシアルキル基、及びそれらの組み合わせであり、前記アルキル基が1〜20の炭素原子を有する直鎖又は分岐鎖炭化水素基であり、前記ヒドロキシアルキル基が1〜20の炭素原子の炭化水素基を含む直鎖又は分岐ヒドロキシル基である)を有する化合物からなる群より選択される1又は複数の第4級アンモニウム水酸化物を含む、請求項1に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記組成物が5〜50wt%の前記水を含む、請求項1に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記組成物が10〜30wt%の前記水を含む、請求項1に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記組成物が、35〜94.5wt%の前記1又は複数のアルカリ化合物を含む、請求項1に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記組成物が、45〜90wt%の前記1又は複数のアルカリ化合物を含む、請求項1に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記組成物が0.1〜15wt%の前記1又は複数の腐食阻害剤を含む、請求項1に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記組成物が、0.001〜5wt%の前記1又は複数の抗酸化剤の1又は複数の酸化生成物を含む、請求項1に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 前記1又は複数の腐食阻害剤が、約0.1〜10質量%の1又は複数のパッシベーション腐食阻害剤及び約0.1〜10質量%の1又は複数の抗酸化剤腐食阻害剤を含む、請求項6に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- 約70〜85質量%の前記1又は複数のアルカリ化合物を含む、請求項2に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物であって、前記アルカリ化合物が、1又は複数のアルカノールアミン、約0.5〜2.5質量%の1又は複数の抗酸化剤腐食阻害剤、0.001〜1%の1又は複数の抗酸化剤の1又は複数の酸化生成物、及び9.9〜28.99wt.%の水を含む、組成物。
- 前記1又は複数の抗酸化剤腐食阻害剤が、没食子酸又はカテコール又は没食子酸とカテコールの混合物を含む、請求項20に記載のフォトレジスト又は半導体製造残留物剥離用及び洗浄用組成物。
- シリコンを含むシリコン基材の上のフォトレジスト又は残留物を除去する方法であって、前記基材を剥離及び洗浄に有効な量の請求項1に記載の組成物に接触させる工程;前記剥離用組成物を剥離に有効な時間前記基材に接触させる工程;及び該フォトレジスト又は該フォトレジスト残留物を前記基材から除去する工程、を含み、前記シリコン基材の前記シリコンが、1Å/min未満の速度でエッチングされる、方法。
- 水、1又は複数のアルカリ化合物、1又は複数の抗酸化剤腐食阻害剤を容器内で混ぜ合わせる工程、及び酸素含有ガス、過酸化物又はニトラートを前記組成物に添加して、前記組成物において1又は複数の抗酸化剤腐食阻害剤の1又は複数の酸化生成物を形成する工程、を含む、請求項2に記載の組成物を製造する方法。
- 前記添加する工程が、前記組成物を通して前記容器内で酸素含有ガスをバブリングすることにより実施される、請求項23に記載の方法。
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US20160179011A1 (en) | 2016-06-23 |
SG10201510541PA (en) | 2016-07-28 |
EP3037511B1 (en) | 2022-07-06 |
KR20160076982A (ko) | 2016-07-01 |
PH12015000443A1 (en) | 2017-08-30 |
JP6430925B2 (ja) | 2018-11-28 |
CN105717756A (zh) | 2016-06-29 |
US10073351B2 (en) | 2018-09-11 |
MY175104A (en) | 2020-06-07 |
TW201623600A (zh) | 2016-07-01 |
KR101818563B1 (ko) | 2018-02-22 |
TWI580776B (zh) | 2017-05-01 |
CN105717756B (zh) | 2021-02-02 |
EP3037511A1 (en) | 2016-06-29 |
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