SG10201510541PA - Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation - Google Patents
Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivationInfo
- Publication number
- SG10201510541PA SG10201510541PA SG10201510541PA SG10201510541PA SG10201510541PA SG 10201510541P A SG10201510541P A SG 10201510541PA SG 10201510541P A SG10201510541P A SG 10201510541PA SG 10201510541P A SG10201510541P A SG 10201510541PA SG 10201510541P A SG10201510541P A SG 10201510541PA
- Authority
- SG
- Singapore
- Prior art keywords
- semi
- semiconductor manufacturing
- cleaning composition
- silicon passivation
- improved silicon
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004140 cleaning Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000002161 passivation Methods 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/267—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02334—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment in-situ cleaning after layer formation, e.g. removing process residues
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- General Chemical & Material Sciences (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462095857P | 2014-12-23 | 2014-12-23 | |
US14/964,033 US10073351B2 (en) | 2014-12-23 | 2015-12-09 | Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201510541PA true SG10201510541PA (en) | 2016-07-28 |
Family
ID=55315273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201510541PA SG10201510541PA (en) | 2014-12-23 | 2015-12-22 | Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation |
Country Status (9)
Country | Link |
---|---|
US (1) | US10073351B2 (ja) |
EP (1) | EP3037511B1 (ja) |
JP (1) | JP6430925B2 (ja) |
KR (1) | KR101818563B1 (ja) |
CN (1) | CN105717756B (ja) |
MY (1) | MY175104A (ja) |
PH (1) | PH12015000443A1 (ja) |
SG (1) | SG10201510541PA (ja) |
TW (1) | TWI580776B (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101964901B1 (ko) | 2013-12-06 | 2019-04-02 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 표면 잔류물 제거용 세정 제형 |
JP6553074B2 (ja) * | 2014-10-14 | 2019-07-31 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | レジストパターン処理用組成物およびそれを用いたパターン形成方法 |
US10145377B2 (en) | 2015-04-02 | 2018-12-04 | Curtiss-Wright Electro-Mechanical Corporation | Canned motor pump thrust shoe heat shield |
KR102434147B1 (ko) | 2016-10-06 | 2022-08-19 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 반도체 기판상의 잔류물을 제거하기 위한 세정 제형 |
CN108121175B (zh) * | 2016-11-29 | 2021-02-02 | 安集微电子科技(上海)股份有限公司 | 一种含氟清洗液 |
US10597609B2 (en) * | 2016-12-29 | 2020-03-24 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning liquid, anticorrosion agent, and method for manufacturing the same |
US10597616B2 (en) * | 2016-12-29 | 2020-03-24 | Toyota Ohka Kogyo Co., Ltd. | Cleaning liquid and method for manufacturing the same |
JP6965143B2 (ja) * | 2016-12-29 | 2021-11-10 | 東京応化工業株式会社 | 洗浄液、防食剤、及びこれらを製造する方法 |
EP3601514A4 (en) | 2017-03-24 | 2020-04-08 | Fujifilm Electronic Materials USA, Inc. | CLEANING COMPOSITIONS FOR REMOVING RESIDUES ON SEMICONDUCTOR SUBSTRATES |
WO2019026491A1 (ja) * | 2017-08-03 | 2019-02-07 | 日華化学株式会社 | 金属用洗浄剤組成物 |
US20190103282A1 (en) * | 2017-09-29 | 2019-04-04 | Versum Materials Us, Llc | Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device |
US11175587B2 (en) * | 2017-09-29 | 2021-11-16 | Versum Materials Us, Llc | Stripper solutions and methods of using stripper solutions |
JP7306373B2 (ja) * | 2018-03-14 | 2023-07-11 | 三菱瓦斯化学株式会社 | ドライエッチング残渣を除去するための洗浄液及びこれを用いた半導体基板の製造方法 |
IL301529A (en) * | 2018-03-28 | 2023-05-01 | Fujifilm Electronic Mat Usa Inc | cleaning products |
US11460778B2 (en) * | 2018-04-12 | 2022-10-04 | Versum Materials Us, Llc | Photoresist stripper |
KR20200119400A (ko) | 2019-03-28 | 2020-10-20 | 허주표 | 탈부착 흡입청소부를 갖는 로봇청소기 |
CN109988675A (zh) * | 2019-04-24 | 2019-07-09 | 上海新阳半导体材料股份有限公司 | 长效型化学机械抛光后清洗液、其制备方法和应用 |
CN109988676A (zh) * | 2019-04-24 | 2019-07-09 | 上海新阳半导体材料股份有限公司 | 一种清洗液、其制备方法和应用 |
CN110262199A (zh) * | 2019-07-25 | 2019-09-20 | 上海新阳半导体材料股份有限公司 | 一种负胶剥离液、其制备方法及应用 |
KR20220076493A (ko) * | 2019-09-30 | 2022-06-08 | 버슘머트리얼즈 유에스, 엘엘씨 | 포토레지스트 제거제 |
CN112859554B (zh) * | 2021-02-04 | 2023-11-10 | 上海新阳半导体材料股份有限公司 | 一种氧化钒缓蚀含氟剥离液的制备方法 |
CN112859553B (zh) * | 2021-02-04 | 2023-11-10 | 上海新阳半导体材料股份有限公司 | 一种氧化钒缓蚀含氟剥离液 |
FR3142034A1 (fr) * | 2022-11-14 | 2024-05-17 | Stmicroelectronics International N.V. | Procédé de fabrication d'un condensateur |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4490181A (en) | 1980-06-27 | 1984-12-25 | Amchem Products, Inc. | Alkaline cleaning of tin surfaces |
US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
US20040018949A1 (en) | 1990-11-05 | 2004-01-29 | Wai Mun Lee | Semiconductor process residue removal composition and process |
US5988186A (en) * | 1991-01-25 | 1999-11-23 | Ashland, Inc. | Aqueous stripping and cleaning compositions |
JP3160344B2 (ja) | 1991-01-25 | 2001-04-25 | アシュランド インコーポレーテッド | 有機ストリッピング組成物 |
US5928430A (en) | 1991-01-25 | 1999-07-27 | Advanced Scientific Concepts, Inc. | Aqueous stripping and cleaning compositions containing hydroxylamine and use thereof |
US5563119A (en) | 1995-01-26 | 1996-10-08 | Ashland Inc. | Stripping compositions containing alkanolamine compounds |
TW426816B (en) * | 1996-04-17 | 2001-03-21 | Ekc Technology Inc | Hydroxylamine-gallic compound composition and process |
US5759973A (en) * | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
WO1998022568A1 (en) * | 1996-11-22 | 1998-05-28 | Advanced Chemical Systems International, Inc. | Stripping formulation including catechol, hydroxylamine, non-alkanolamine, water for post plasma ashed wafer cleaning |
US5997658A (en) | 1998-01-09 | 1999-12-07 | Ashland Inc. | Aqueous stripping and cleaning compositions |
ATE436043T1 (de) * | 1998-05-18 | 2009-07-15 | Mallinckrodt Baker Inc | Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate |
US6368421B1 (en) * | 1998-07-10 | 2002-04-09 | Clariant Finance (Bvi) Limited | Composition for stripping photoresist and organic materials from substrate surfaces |
US6828289B2 (en) * | 1999-01-27 | 2004-12-07 | Air Products And Chemicals, Inc. | Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature |
JP3054145B1 (ja) * | 1999-04-22 | 2000-06-19 | 東京応化工業株式会社 | ホトレジスト用剥離液組成物およびこれを用いたホトレジスト剥離方法 |
US7129199B2 (en) | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
TWI270749B (en) | 1999-06-07 | 2007-01-11 | Tokyo Ohka Kogyo Co Ltd | Photoresist stripping liquid composition and a method of stripping photoresists using the same |
KR100360397B1 (ko) * | 1999-11-26 | 2002-11-18 | 삼성전자 주식회사 | 레지스트 제거용 조성물 및 이를 이용한 레지스트 제거 방법 |
US20020025762A1 (en) | 2000-02-16 | 2002-02-28 | Qiuliang Luo | Biocides for polishing slurries |
US6531436B1 (en) | 2000-02-25 | 2003-03-11 | Shipley Company, L.L.C. | Polymer removal |
KR100360985B1 (ko) * | 2000-04-26 | 2002-11-18 | 주식회사 동진쎄미켐 | 레지스트 스트리퍼 조성물 |
US6558879B1 (en) * | 2000-09-25 | 2003-05-06 | Ashland Inc. | Photoresist stripper/cleaner compositions containing aromatic acid inhibitors |
US6525147B1 (en) | 2001-06-20 | 2003-02-25 | Baker Hughes Incorporated | Use of diamines and alkanolamines to inhibit unsaturated monomer polymerization |
JP3403187B2 (ja) * | 2001-08-03 | 2003-05-06 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
JP3797541B2 (ja) * | 2001-08-31 | 2006-07-19 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
EP1692572A2 (en) * | 2003-10-29 | 2006-08-23 | Mallinckrodt Baker, Inc. | Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors |
EP2687589A3 (en) | 2005-05-26 | 2014-05-07 | Advanced Technology Materials, Inc. | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
KR101221560B1 (ko) | 2005-09-02 | 2013-01-14 | 주식회사 동진쎄미켐 | 변성된 포토레지스트 제거를 위한 반도체 소자용 박리액조성물 |
KR101292497B1 (ko) * | 2007-01-12 | 2013-08-01 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의박리방법 |
JP2009075285A (ja) * | 2007-09-20 | 2009-04-09 | Fujifilm Corp | 半導体デバイスの剥離液、及び、剥離方法 |
US20090120457A1 (en) | 2007-11-09 | 2009-05-14 | Surface Chemistry Discoveries, Inc. | Compositions and method for removing coatings and preparation of surfaces for use in metal finishing, and manufacturing of electronic and microelectronic devices |
US8357646B2 (en) * | 2008-03-07 | 2013-01-22 | Air Products And Chemicals, Inc. | Stripper for dry film removal |
WO2010104816A1 (en) * | 2009-03-11 | 2010-09-16 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning formulation for removing residues on surfaces |
US8110535B2 (en) | 2009-08-05 | 2012-02-07 | Air Products And Chemicals, Inc. | Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same |
JP5583789B2 (ja) * | 2010-01-26 | 2014-09-03 | ウエスチングハウス・エレクトリック・カンパニー・エルエルシー | 堆積物を除去する方法及び組成物 |
US8889609B2 (en) | 2011-03-16 | 2014-11-18 | Air Products And Chemicals, Inc. | Cleaning formulations and method of using the cleaning formulations |
KR101880302B1 (ko) | 2011-10-25 | 2018-07-20 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트 박리방법 |
-
2015
- 2015-12-09 US US14/964,033 patent/US10073351B2/en active Active
- 2015-12-17 TW TW104142551A patent/TWI580776B/zh active
- 2015-12-18 PH PH12015000443A patent/PH12015000443A1/en unknown
- 2015-12-21 KR KR1020150182944A patent/KR101818563B1/ko active IP Right Grant
- 2015-12-21 MY MYPI2015704659A patent/MY175104A/en unknown
- 2015-12-21 JP JP2015248477A patent/JP6430925B2/ja active Active
- 2015-12-21 EP EP15201559.0A patent/EP3037511B1/en active Active
- 2015-12-22 SG SG10201510541PA patent/SG10201510541PA/en unknown
- 2015-12-23 CN CN201510981707.XA patent/CN105717756B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20160179011A1 (en) | 2016-06-23 |
EP3037511B1 (en) | 2022-07-06 |
KR20160076982A (ko) | 2016-07-01 |
PH12015000443A1 (en) | 2017-08-30 |
JP6430925B2 (ja) | 2018-11-28 |
CN105717756A (zh) | 2016-06-29 |
US10073351B2 (en) | 2018-09-11 |
MY175104A (en) | 2020-06-07 |
TW201623600A (zh) | 2016-07-01 |
KR101818563B1 (ko) | 2018-02-22 |
TWI580776B (zh) | 2017-05-01 |
JP2016148834A (ja) | 2016-08-18 |
CN105717756B (zh) | 2021-02-02 |
EP3037511A1 (en) | 2016-06-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201510541PA (en) | Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation | |
SG10202005212QA (en) | Composition for etching and method for manufacturing semiconductor device using same | |
IL241077B (en) | Checking the edge of a slice, pre-aligning a slice and cleaning a slice in line | |
IL252317A0 (en) | Production and repair of a pin clip for slices | |
TWI562209B (en) | Semiconductor device and method for manufacturing the same | |
GB201403868D0 (en) | CMOS-Based semiconductor device on micro-hotplate and method of fabrication | |
SG10201502280PA (en) | Compositions and methods for the deposition of silicon oxide films | |
SG10201912585TA (en) | Semiconductor device and method for manufacturing the same | |
IL247785B (en) | Liquid and method for cleaning a semiconductor component | |
IL253202A0 (en) | Stripping compounds for removing photoresist from semiconductor materials | |
SG10201505824YA (en) | Semiconductor device and method of manufacturing the same | |
IL265773B (en) | Cleaning agents for removing residues on semiconductor substrates | |
EP3093875A4 (en) | Liquid composition for semiconductor element cleaning and method for cleaning semiconductor element | |
HK1221070A1 (zh) | 半導體器件和用於製造其的方法 | |
GB2543700B (en) | Gate-drive-on-array circuit for use with oxide semiconductor thin-film transistors | |
SG11201609077VA (en) | Composition for polishing silicon wafers | |
EP2953157A4 (en) | GRIP SUPPORTS AND COMPOSITE WAFER FOR A SEMICONDUCTOR COMPONENT | |
EP3176823A4 (en) | Semiconductor device having esd element | |
SG10201510080RA (en) | Silicon etch and clean | |
SG11201808637XA (en) | Methods and apparatus for cleaning semiconductor wafers | |
EP3442038A4 (en) | SEMICONDUCTOR WAFER | |
SG11201705286VA (en) | Silicon wafer edge protection device | |
HK1248922A1 (zh) | 在半導體上製造外部氧化物或外部氮化物 | |
GB201400518D0 (en) | Semiconductor devices and fabrication methods | |
SG11201701771YA (en) | Composition for removing photoresist residue and/or polymer residue |