SG11201701771YA - Composition for removing photoresist residue and/or polymer residue - Google Patents
Composition for removing photoresist residue and/or polymer residueInfo
- Publication number
- SG11201701771YA SG11201701771YA SG11201701771YA SG11201701771YA SG11201701771YA SG 11201701771Y A SG11201701771Y A SG 11201701771YA SG 11201701771Y A SG11201701771Y A SG 11201701771YA SG 11201701771Y A SG11201701771Y A SG 11201701771YA SG 11201701771Y A SG11201701771Y A SG 11201701771YA
- Authority
- SG
- Singapore
- Prior art keywords
- residue
- composition
- removing photoresist
- polymer
- polymer residue
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title 1
- 229920000642 polymer Polymers 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32138—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
-
- C11D2111/22—
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014223642A JP6501492B2 (en) | 2014-10-31 | 2014-10-31 | Composition for removing photoresist residue and / or polymer residue |
PCT/JP2015/080739 WO2016068290A1 (en) | 2014-10-31 | 2015-10-30 | Composition for removing photoresist residue and/or polymer residue |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201701771YA true SG11201701771YA (en) | 2017-04-27 |
Family
ID=55857623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201701771YA SG11201701771YA (en) | 2014-10-31 | 2015-10-30 | Composition for removing photoresist residue and/or polymer residue |
Country Status (8)
Country | Link |
---|---|
US (1) | US11091726B2 (en) |
JP (1) | JP6501492B2 (en) |
KR (1) | KR20170078589A (en) |
CN (1) | CN106688081A (en) |
DE (1) | DE112015004958T5 (en) |
SG (1) | SG11201701771YA (en) |
TW (1) | TWI674486B (en) |
WO (1) | WO2016068290A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101586453B1 (en) * | 2014-08-20 | 2016-01-21 | 주식회사 엘지화학 | Stripper composition for removing photoresist and stripping method of photoresist using the same |
KR20180069185A (en) * | 2016-12-14 | 2018-06-25 | 삼성전자주식회사 | Method for processing substrate and cleaner composition for adhension layer |
WO2018148237A1 (en) * | 2017-02-10 | 2018-08-16 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning formulations |
CN108085683A (en) * | 2018-01-22 | 2018-05-29 | 深圳市华星光电技术有限公司 | A kind of etchant |
CN109407478A (en) * | 2018-12-26 | 2019-03-01 | 李晨阳 | POLY-270 removes cleaning solution and preparation method thereof |
CN114035411B (en) * | 2021-10-19 | 2023-11-10 | 湖北兴福电子材料股份有限公司 | Photoresist stripping liquid |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3757045B2 (en) | 1997-12-10 | 2006-03-22 | 昭和電工株式会社 | Side wall remover |
JP4308959B2 (en) | 1998-02-27 | 2009-08-05 | 関東化学株式会社 | Photoresist stripping composition |
JP3474127B2 (en) | 1998-11-13 | 2003-12-08 | 花王株式会社 | Release agent composition |
JP3328250B2 (en) | 1998-12-09 | 2002-09-24 | 岸本産業株式会社 | Resist residue remover |
JP4223621B2 (en) | 1999-03-12 | 2009-02-12 | ナガセケムテックス株式会社 | Method of using resist remover composition |
JP4202542B2 (en) | 1999-08-05 | 2008-12-24 | 花王株式会社 | Release agent composition |
JP2001100436A (en) | 1999-09-28 | 2001-04-13 | Mitsubishi Gas Chem Co Inc | Resist removing solution composition |
JP4614415B2 (en) | 2000-08-30 | 2011-01-19 | フアインポリマーズ株式会社 | Resist residue remover |
US6599370B2 (en) | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
JP2002357908A (en) * | 2001-05-31 | 2002-12-13 | Tokyo Ohka Kogyo Co Ltd | Photoresist removing solution |
JP4138323B2 (en) | 2002-01-30 | 2008-08-27 | 花王株式会社 | Release agent composition |
KR100416627B1 (en) * | 2002-06-18 | 2004-01-31 | 삼성전자주식회사 | Semiconductor device and Method for manufacturing the same |
JP4170710B2 (en) | 2002-09-02 | 2008-10-22 | 花王株式会社 | Release agent composition |
JP4165208B2 (en) | 2002-12-24 | 2008-10-15 | 東ソー株式会社 | Resist stripping method |
JP2004239966A (en) | 2003-02-03 | 2004-08-26 | Ykk Corp | Optical fiber coupler, and manufacturing method and manufacturing equipment therefor |
PL1664935T3 (en) | 2003-08-19 | 2008-01-31 | Avantor Performance Mat Inc | Stripping and cleaning compositions for microelectronics |
JP4456424B2 (en) * | 2004-06-29 | 2010-04-28 | 関東化学株式会社 | Photoresist residue and polymer residue removal composition |
JP4642001B2 (en) * | 2006-10-24 | 2011-03-02 | 関東化学株式会社 | Composition for removing photoresist residue and polymer residue |
US7879783B2 (en) | 2007-01-11 | 2011-02-01 | Air Products And Chemicals, Inc. | Cleaning composition for semiconductor substrates |
EP2798669B1 (en) | 2011-12-28 | 2021-03-31 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
US9536730B2 (en) | 2012-10-23 | 2017-01-03 | Air Products And Chemicals, Inc. | Cleaning formulations |
KR102118964B1 (en) * | 2012-12-05 | 2020-06-08 | 엔테그리스, 아이엔씨. | Compositions for cleaning iii-v semiconductor materials and methods of using same |
-
2014
- 2014-10-31 JP JP2014223642A patent/JP6501492B2/en not_active Expired - Fee Related
-
2015
- 2015-10-30 CN CN201580046644.7A patent/CN106688081A/en active Pending
- 2015-10-30 KR KR1020177005072A patent/KR20170078589A/en unknown
- 2015-10-30 DE DE112015004958.4T patent/DE112015004958T5/en not_active Withdrawn
- 2015-10-30 TW TW104135802A patent/TWI674486B/en not_active IP Right Cessation
- 2015-10-30 SG SG11201701771YA patent/SG11201701771YA/en unknown
- 2015-10-30 WO PCT/JP2015/080739 patent/WO2016068290A1/en active Application Filing
- 2015-10-30 US US15/510,810 patent/US11091726B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP6501492B2 (en) | 2019-04-17 |
CN106688081A (en) | 2017-05-17 |
DE112015004958T5 (en) | 2017-07-27 |
JP2016092150A (en) | 2016-05-23 |
KR20170078589A (en) | 2017-07-07 |
US11091726B2 (en) | 2021-08-17 |
WO2016068290A1 (en) | 2016-05-06 |
TW201629644A (en) | 2016-08-16 |
US20180051237A1 (en) | 2018-02-22 |
TWI674486B (en) | 2019-10-11 |
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