JP2016103616A - 電子部品、その製造方法及び製造装置 - Google Patents
電子部品、その製造方法及び製造装置 Download PDFInfo
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- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/18—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
- B29C2043/181—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles encapsulated
- B29C2043/182—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles encapsulated completely
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
2 配線基板
3 電子素子
4 封止樹脂
5 板状部材
6 導電性部材
7 配線基板の主面
8 ボンディングパッド
9 グラウンド配線パターン
10 接続電極
11 金属細線
12 実装済基板
13 成形型
14 上型(第1の型)
15 下型(第2の型)
16 キャビティ
17 突起(第2の位置合わせ部)
18 導電体付板状部材
19 切り欠き(第1の位置合わせ部)
20 液状樹脂
21 導電性部材
22 実装済基板
23 実装済基板の主面
24 導電体付板状部材
25 導電体付板状部材の主面
26 封止済基板
27 回転刃
28 ダイシングライン
29 個片領域
2 配線基板
3 電子素子
4 封止樹脂
5 板状部材
6 導電性部材
7 配線基板の主面
8 ボンディングパッド
9 グラウンド配線パターン
10 接続電極
11 金属細線
12 実装済基板
13 成形型
14 上型(第1の型)
15 下型(第2の型)
16 キャビティ
17 突起(第2の位置合わせ部)
18 導電体付板状部材
19 切り欠き(第1の位置合わせ部)
20 液状樹脂
21 導電性部材
22 実装済基板
23 実装済基板の主面
24 導電体付板状部材
25 導電体付板状部材の主面
26 封止済基板
27 回転刃
28 ダイシングライン
29 個片領域
Claims (8)
- 電子素子と、前記電子素子の接続電極に電気的に接続されたボンディングパッドと、グランド配線パターンとを有する実装済基板と、流動性樹脂が硬化することによって形成され前記電子素子と前記グランド配線パターンとを少なくとも覆う封止樹脂とを備える電子部品であって、前記封止樹脂における前記実装済基板とは反対側の面に固着され、導電性を有する導電体付板状部材と、前記導電体付板状部材に予め形成され、前記グランド配線パターンに電気的に接続された導電性部材とを備え、前記導電性部材が前記封止樹脂によって覆われていることを特徴とする電子部品。
- 請求項1に記載された電子部品において、前記実装済基板が前記導電性部材を前記導電体付板状部材に向かって押圧した状態において前記流動性樹脂が硬化することによって、前記導電性部材が前記グランド配線パターンに電気的に接続されたことを特徴とする電子部品。
- 請求項1に記載された電子部品において、前記流動性樹脂が硬化する際の圧縮応力が前記導電性部材を前記グランド配線パターンに向かって押圧した状態において前記流動性樹脂が硬化することによって、前記導電性部材が前記グランド配線パターンに電気的に接続されたことを特徴とする電子部品。
- 電子素子と、前記電子素子の接続電極に電気的に接続されたボンディングパッドと、グランド配線パターンとを有する実装済基板を準備する工程と、主面から突出する導電性部材を有する導電体付板状部材を準備する工程と、第1の型の所定の位置に前記実装済基板を一時的に固定する工程と、第2の型に設けられたキャビティの内底面に前記導電体付板状部材を配置する工程と、流動性樹脂によって前記キャビティを満たされた状態にする工程と、前記第1の型と前記第2の型とを型締めすることによって、前記導電性部材の少なくとも一部を前記流動性樹脂に浸漬する工程と、前記第1の型と前記第2の型とを型締めすることによって、前記グランド配線パターンと前記導電性部材とを接触させる工程と、前記第1の型と前記第2の型とを型締めすることによって、少なくとも前記電子素子と前記グランド配線パターンとを前記流動性樹脂に浸漬する工程と、前記流動性樹脂を硬化させて硬化樹脂からなる封止樹脂を形成する工程と、前記第1の型と前記第2の型とを型開きすることによって、前記電子素子と前記グランド配線パターンと前記導電性部材と前記封止樹脂を含む電子部品を前記第2の型から分離する工程とを備えることを特徴とする電子部品の製造方法。
- 請求項4に記載された電子部品の製造方法において、前記封止樹脂を成形する工程では、前記実装済基板が前記導電性部材を前記導電体付板状部材に向かって押圧した状態において前記流動性樹脂を硬化させることを特徴とする電子部品の製造方法。
- 請求項4に記載された電子部品の製造方法において、前記封止樹脂を成形する工程では、前記流動性樹脂が硬化する際の圧縮応力が前記導電性部材を前記グランド配線パターンに向かって押圧した状態において前記流動性樹脂を硬化させることを特徴とする電子部品の製造方法。
- 電子素子と、前記電子素子の接続電極に電気的に接続されたボンディングパッドと、グランド配線パターンとを有する実装済基板と、流動性樹脂が硬化することによって形成され前記電子素子と前記グランド配線パターンとを少なくとも覆う封止樹脂と、前記封止樹脂に固着し導電性を有する導電体付板状部材と、前記導電体付板状部材に予め形成され前記グランド配線パターンに電気的に接続された導電性部材とを備える電子部品を製造する電子部品の製造装置であって、前記実装済基板が一時的に固定される第1の型と、キャビティを有する第2の型とを備え、前記キャビティの内底面に前記導電体付板状部材が配置され、前記第1の型と前記第2の型とが型締めされる際に、前記キャビティに満たされた前記流動性樹脂が前記導電体付板状部材と前記導電性部材とを覆い、前記第1の型と前記第2の型とが型締めした状態において前記導電性部材と前記グランド配線パターンとが電気的に接触し、前記第1の型と前記第2の型とが型締めした状態において前記キャビティに満たされた前記流動性樹脂が硬化して前記封止樹脂が形成されることを特徴とする電子部品の製造装置。
- 請求項7に記載された電子部品の製造装置において、前記実装済基板に設けられた第1の位置合わせ部と、前記キャビティに設けられた第2の位置合わせ部とを備え、前記第1の位置合わせ部と前記第2の位置合わせ部とによって前記実装済基板と前記キャビティとが位置合わせされることを特徴とする電子部品の製造装置。
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JP2014242572A JP6444707B2 (ja) | 2014-11-28 | 2014-11-28 | 電子部品、その製造方法及び製造装置 |
KR1020150153774A KR101847691B1 (ko) | 2014-11-28 | 2015-11-03 | 전자 부품의 제조 방법 및 제조 장치 |
TW104136866A TWI575617B (zh) | 2014-11-28 | 2015-11-09 | An electronic component, an electronic component manufacturing method, and an electronic component manufacturing apparatus |
CN201510791707.3A CN105643855B (zh) | 2014-11-28 | 2015-11-17 | 电子部件、其制造方法及制造装置 |
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JP2020088373A (ja) * | 2018-11-28 | 2020-06-04 | 宗哲 蔡 | 半導体パッケージ及びその製造方法 |
US10847480B2 (en) | 2018-11-28 | 2020-11-24 | Shiann-Tsong Tsai | Semiconductor package with in-package compartmental shielding and fabrication method thereof |
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US10923435B2 (en) | 2018-11-28 | 2021-02-16 | Shiann-Tsong Tsai | Semiconductor package with in-package compartmental shielding and improved heat-dissipation performance |
US11211340B2 (en) | 2018-11-28 | 2021-12-28 | Shiann-Tsong Tsai | Semiconductor package with in-package compartmental shielding and active electro-magnetic compatibility shielding |
US11239179B2 (en) | 2018-11-28 | 2022-02-01 | Shiann-Tsong Tsai | Semiconductor package and fabrication method thereof |
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JP6444707B2 (ja) | 2018-12-26 |
KR20160064970A (ko) | 2016-06-08 |
CN105643855B (zh) | 2018-09-18 |
KR101847691B1 (ko) | 2018-04-10 |
TWI575617B (zh) | 2017-03-21 |
CN105643855A (zh) | 2016-06-08 |
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