JP2016103540A5 - - Google Patents

Download PDF

Info

Publication number
JP2016103540A5
JP2016103540A5 JP2014240327A JP2014240327A JP2016103540A5 JP 2016103540 A5 JP2016103540 A5 JP 2016103540A5 JP 2014240327 A JP2014240327 A JP 2014240327A JP 2014240327 A JP2014240327 A JP 2014240327A JP 2016103540 A5 JP2016103540 A5 JP 2016103540A5
Authority
JP
Japan
Prior art keywords
semiconductor device
compound semiconductor
center line
unit transistors
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014240327A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016103540A (ja
JP6071009B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2014240327A external-priority patent/JP6071009B2/ja
Priority to JP2014240327A priority Critical patent/JP6071009B2/ja
Priority to TW104133498A priority patent/TWI580044B/zh
Priority to US14/932,497 priority patent/US9825156B2/en
Priority to CN201510829130.0A priority patent/CN105655393B/zh
Publication of JP2016103540A publication Critical patent/JP2016103540A/ja
Publication of JP2016103540A5 publication Critical patent/JP2016103540A5/ja
Priority to US15/229,730 priority patent/US9831329B2/en
Publication of JP6071009B2 publication Critical patent/JP6071009B2/ja
Application granted granted Critical
Priority to US15/709,017 priority patent/US10276701B2/en
Priority to US16/355,172 priority patent/US10714602B2/en
Priority to US16/568,154 priority patent/US10868155B2/en
Priority to US17/097,937 priority patent/US11508834B2/en
Priority to US17/398,909 priority patent/US11869957B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014240327A 2014-11-27 2014-11-27 化合物半導体装置 Active JP6071009B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2014240327A JP6071009B2 (ja) 2014-11-27 2014-11-27 化合物半導体装置
TW104133498A TWI580044B (zh) 2014-11-27 2015-10-13 化合物半導體裝置及電力增幅模組
US14/932,497 US9825156B2 (en) 2014-11-27 2015-11-04 Compound semiconductor device
CN201510829130.0A CN105655393B (zh) 2014-11-27 2015-11-25 化合物半导体装置
US15/229,730 US9831329B2 (en) 2014-11-27 2016-08-05 Compound semiconductor device
US15/709,017 US10276701B2 (en) 2014-11-27 2017-09-19 Compound semiconductor device
US16/355,172 US10714602B2 (en) 2014-11-27 2019-03-15 Compound semiconductor device
US16/568,154 US10868155B2 (en) 2014-11-27 2019-09-11 Compound semiconductor device
US17/097,937 US11508834B2 (en) 2014-11-27 2020-11-13 Compound semiconductor device
US17/398,909 US11869957B2 (en) 2014-11-27 2021-08-10 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014240327A JP6071009B2 (ja) 2014-11-27 2014-11-27 化合物半導体装置

Publications (3)

Publication Number Publication Date
JP2016103540A JP2016103540A (ja) 2016-06-02
JP2016103540A5 true JP2016103540A5 (enExample) 2016-08-04
JP6071009B2 JP6071009B2 (ja) 2017-02-01

Family

ID=56079674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014240327A Active JP6071009B2 (ja) 2014-11-27 2014-11-27 化合物半導体装置

Country Status (4)

Country Link
US (4) US9825156B2 (enExample)
JP (1) JP6071009B2 (enExample)
CN (1) CN105655393B (enExample)
TW (1) TWI580044B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018032848A (ja) * 2016-08-25 2018-03-01 株式会社村田製作所 半導体装置
CN117038665A (zh) * 2017-12-06 2023-11-10 株式会社村田制作所 半导体装置
US10734310B2 (en) * 2017-12-06 2020-08-04 Murata Manufacturing Co., Ltd. Semiconductor apparatus
JP2019102724A (ja) 2017-12-06 2019-06-24 株式会社村田製作所 半導体素子
JP2019149485A (ja) 2018-02-27 2019-09-05 株式会社村田製作所 半導体装置
JP2020010005A (ja) * 2018-07-12 2020-01-16 株式会社村田製作所 半導体装置
JP2020088153A (ja) 2018-11-26 2020-06-04 株式会社村田製作所 半導体装置
JP2020119974A (ja) 2019-01-23 2020-08-06 株式会社村田製作所 半導体装置
TWI747145B (zh) 2019-03-19 2021-11-21 日商村田製作所股份有限公司 半導體裝置及放大器模組
JP7516786B2 (ja) 2019-06-21 2024-07-17 株式会社村田製作所 半導体装置及びその製造方法
JP2021048250A (ja) 2019-09-18 2021-03-25 株式会社村田製作所 半導体装置
TWI785503B (zh) 2020-03-11 2022-12-01 日商村田製作所股份有限公司 Ｒｆ電路模組及其製造方法
JP7533099B2 (ja) * 2020-10-07 2024-08-14 株式会社村田製作所 半導体装置
JP7625825B2 (ja) 2020-10-21 2025-02-04 株式会社村田製作所 半導体装置
WO2022209731A1 (ja) * 2021-03-31 2022-10-06 株式会社村田製作所 高周波モジュール及び通信装置
WO2022209734A1 (ja) * 2021-03-31 2022-10-06 株式会社村田製作所 高周波モジュール及び通信装置
WO2022224957A1 (ja) * 2021-04-23 2022-10-27 株式会社村田製作所 半導体装置
WO2022224956A1 (ja) * 2021-04-23 2022-10-27 株式会社村田製作所 半導体装置
TWI789073B (zh) * 2021-10-25 2023-01-01 國立清華大學 射頻積體電路

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5734193A (en) * 1994-01-24 1998-03-31 The United States Of America As Represented By The Secretary Of The Air Force Termal shunt stabilization of multiple part heterojunction bipolar transistors
US5469108A (en) * 1994-08-15 1995-11-21 Texas Instruments Incorporated Reactively compensated power transistor circuits
JP2953972B2 (ja) * 1995-01-27 1999-09-27 日本電気株式会社 半導体装置
JPH10135236A (ja) * 1996-10-31 1998-05-22 Sanyo Electric Co Ltd 化合物半導体装置
US6034383A (en) * 1997-11-13 2000-03-07 Northrop Grumman Corporation High power density microwave HBT with uniform signal distribution
JP4054456B2 (ja) * 1998-09-28 2008-02-27 シャープ株式会社 高周波増幅器
JP3660832B2 (ja) * 1999-08-02 2005-06-15 松下電器産業株式会社 半導体集積回路装置
JP2002076014A (ja) * 2000-08-30 2002-03-15 Mitsubishi Electric Corp 高周波用半導体装置
GB0126895D0 (en) * 2001-11-08 2002-01-02 Denselight Semiconductors Pte Fabrication of a heterojunction bipolar transistor with intergrated mim capaci or
JP2004087532A (ja) * 2002-08-22 2004-03-18 Matsushita Electric Ind Co Ltd バイポーラトランジスタ、発振回路および電圧制御型発振装置
JP2004095714A (ja) 2002-08-30 2004-03-25 Toshiba Corp 化合物半導体装置
US6803643B2 (en) * 2002-09-30 2004-10-12 M/A-Com, Inc. Compact non-linear HBT array
JP2004260364A (ja) * 2003-02-25 2004-09-16 Renesas Technology Corp 半導体装置及び高出力電力増幅装置並びにパソコンカード
US20050151159A1 (en) * 2003-11-21 2005-07-14 Zhenqiang Ma Solid-state high power device and method
JP5011549B2 (ja) * 2004-12-28 2012-08-29 株式会社村田製作所 半導体装置
JP4959140B2 (ja) * 2005-02-04 2012-06-20 株式会社日立超エル・エス・アイ・システムズ 半導体装置
KR100677816B1 (ko) * 2005-03-28 2007-02-02 산요덴키가부시키가이샤 능동 소자 및 스위치 회로 장치
US7282997B2 (en) * 2005-04-29 2007-10-16 Triquint Semiconductor, Inc. Thermal coupling device
JP2007053148A (ja) * 2005-08-16 2007-03-01 Renesas Technology Corp 半導体モジュール
JP2007242727A (ja) * 2006-03-06 2007-09-20 Sharp Corp ヘテロ接合バイポーラトランジスタ及びこれを用いた電力増幅器
JP2008131017A (ja) 2006-11-27 2008-06-05 Toyota Industries Corp 半導体装置
JP5407667B2 (ja) * 2008-11-05 2014-02-05 株式会社村田製作所 半導体装置
KR101680511B1 (ko) 2012-06-14 2016-11-28 스카이워크스 솔루션즈, 인코포레이티드 계조를 갖는 쌍극성 트랜지스터 및 관련된 시스템, 장치, 및 방법을 포함하는 전력 증폭기 모듈
TWI540722B (zh) * 2013-04-17 2016-07-01 穩懋半導體股份有限公司 異質接面雙極電晶體佈局結構
US10069466B2 (en) * 2015-10-22 2018-09-04 Skyworks Solutions, Inc. Direct substrate to solder bump connection for thermal management in flip chip amplifiers

Similar Documents

Publication Publication Date Title
JP2016103540A5 (enExample)
JP6071009B2 (ja) 化合物半導体装置
WO2014116687A3 (en) Amplifiers with improved isolation
JP2007184955A5 (enExample)
JP2017506043A5 (enExample)
JP2012239166A5 (ja) 半導体装置
JP2011175250A5 (ja) 半導体装置
JP2011222631A5 (enExample)
JP2015012609A5 (enExample)
JP2012256859A5 (enExample)
US20150366099A1 (en) Wireless communication module
JP2012033615A5 (enExample)
JP2011187647A5 (enExample)
EP2148433A4 (en) LOW NOISE AMPLIFIER WITH EXTENDED RANGE
JP2014030321A5 (enExample)
JP2016039304A5 (enExample)
JP2015135966A5 (enExample)
FR3010463B1 (fr) Impulseur de pompe polyphasique avec des moyens d'amplification et de repartition d'ecoulements de jeu.
JP2017138377A5 (enExample)
JP2015023098A5 (enExample)
JP2015139207A5 (enExample)
JP2013115760A5 (enExample)
JP2014165259A (ja) カスコード増幅器
JP2010245666A5 (ja) 増幅装置
JP2010259066A5 (ja) 半導体装置および非接触データキャリア