JP6071009B2 - 化合物半導体装置 - Google Patents
化合物半導体装置 Download PDFInfo
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- JP6071009B2 JP6071009B2 JP2014240327A JP2014240327A JP6071009B2 JP 6071009 B2 JP6071009 B2 JP 6071009B2 JP 2014240327 A JP2014240327 A JP 2014240327A JP 2014240327 A JP2014240327 A JP 2014240327A JP 6071009 B2 JP6071009 B2 JP 6071009B2
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- 150000001875 compounds Chemical class 0.000 title claims description 67
- 239000004065 semiconductor Substances 0.000 title claims description 67
- 230000003321 amplification Effects 0.000 claims description 21
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 21
- 238000010586 diagram Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000004088 simulation Methods 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H01L2924/13051—Heterojunction bipolar transistor [HBT]
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Wire Bonding (AREA)
- Bipolar Integrated Circuits (AREA)
Description
110 単位トランジスタ
111 キャパシタ
112 抵抗
120 セル
130 RF入力配線
131 ベース配線
132 バイアス制御配線
133 コレクタ配線
300 サブコレクタ
310 コレクタ
311 コレクタ電極
320 ベース
321 ベース電極
330 エミッタ
331 エミッタ電極
340 GaAs基板
400 表面実装部品
410 モジュール基板
420 接地面
Claims (9)
- 複数の単位トランジスタを含むヘテロ接合バイポーラトランジスタと、
前記複数の単位トランジスタのエミッタと電気的に接続されたバンプと、
を備える化合物半導体装置であって、
前記複数の単位トランジスタが、第1の方向に配列され、
前記バンプが、前記複数の単位トランジスタのエミッタ上に、前記第1の方向に延伸して配置され、
複数の単位トランジスタは、前記バンプの前記第1の方向に延びる中心線から前記第1の方向と垂直な第2の方向における一方の側に配置されたエミッタを有する第1の単位トランジスタと、前記バンプの前記中心線から前記第2の方向における他方の側に配置されたエミッタを有する第2の単位トランジスタとを含み、
前記第1及び第2の単位トランジスタのそれぞれのエミッタは、一部が前記バンプに覆われておらず残りの部分が前記バンプで覆われ、前記エミッタの長手方向と前記第1の方向とは直交している、
化合物半導体装置。 - 請求項1に記載の化合物半導体装置であって、
複数の前記第1の単位トランジスタ及び複数の前記第2の単位トランジスタを備え、
前記第1及び第2の単位トランジスタのエミッタが、前記バンプの前記中心線から前記一方の側と前記他方の側とに一つずつ交互に配置された、
化合物半導体装置。 - 請求項1に記載の化合物半導体装置であって、
複数の前記第1の単位トランジスタ及び複数の前記第2の単位トランジスタを備え、
前記第1及び第2の単位トランジスタのエミッタが、前記バンプの前記中心線から前記一方の側と前記他方の側とに複数個ずつ交互に配置された、
化合物半導体装置。 - 請求項1〜3の何れか一項に記載の化合物半導体装置であって、
前記第1及び第2の単位トランジスタのエミッタが、前記バンプの前記中心線に重ならないように配置された、
化合物半導体装置。 - 請求項1〜4の何れか一項に記載の化合物半導体装置であって、
前記第1の単位トランジスタのエミッタの前記第2の方向に延びる中心線が、前記第2の単位トランジスタのエミッタの前記第2の方向に延びる中心線と、前記第2の方向において重ならない、
化合物半導体装置。 - 請求項2に記載の化合物半導体装置であって、
前記第1及び第2の単位トランジスタのそれぞれのエミッタは、一部が前記バンプに覆われておらず残りの部分が前記バンプで覆われており、
前記バンプの前記中心線と、前記第1の単位トランジスタの前記第1の方向に延びる中心線との間隔、及び、前記バンプの前記中心線と、前記第2の単位トランジスタの前記第1の方向に延びる中心線との間隔が、10μm以上30μm以下である、
化合物半導体装置。 - 請求項6に記載の化合物半導体装置であって、
前記第1及び第2の単位トランジスタのそれぞれのエミッタの前記一部の前記第2の方向の長さが0μm以上12.5μm以下である、
化合物半導体装置。 - 請求項1〜7の何れか一項に記載の化合物半導体装置を備える電力増幅モジュールであって、
前記ヘテロ接合バイポーラトランジスタは、無線周波数信号を増幅する増幅素子である、
電力増幅モジュール。 - 請求項8に記載の電力増幅モジュールであって、
前記電力増幅モジュールは、複数段の増幅器を備え、
前記ヘテロ接合バイポーラトランジスタは、前記複数段の増幅器のうちの最終段の増幅器における前記増幅素子である、
電力増幅モジュール。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014240327A JP6071009B2 (ja) | 2014-11-27 | 2014-11-27 | 化合物半導体装置 |
TW104133498A TWI580044B (zh) | 2014-11-27 | 2015-10-13 | 化合物半導體裝置及電力增幅模組 |
US14/932,497 US9825156B2 (en) | 2014-11-27 | 2015-11-04 | Compound semiconductor device |
CN201510829130.0A CN105655393B (zh) | 2014-11-27 | 2015-11-25 | 化合物半导体装置 |
US15/229,730 US9831329B2 (en) | 2014-11-27 | 2016-08-05 | Compound semiconductor device |
US15/709,017 US10276701B2 (en) | 2014-11-27 | 2017-09-19 | Compound semiconductor device |
US16/355,172 US10714602B2 (en) | 2014-11-27 | 2019-03-15 | Compound semiconductor device |
US16/568,154 US10868155B2 (en) | 2014-11-27 | 2019-09-11 | Compound semiconductor device |
US17/097,937 US11508834B2 (en) | 2014-11-27 | 2020-11-13 | Compound semiconductor device |
US17/398,909 US11869957B2 (en) | 2014-11-27 | 2021-08-10 | Compound semiconductor device |
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JP2014240327A JP6071009B2 (ja) | 2014-11-27 | 2014-11-27 | 化合物半導体装置 |
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JP2016103540A JP2016103540A (ja) | 2016-06-02 |
JP2016103540A5 JP2016103540A5 (ja) | 2016-08-04 |
JP6071009B2 true JP6071009B2 (ja) | 2017-02-01 |
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US (4) | US9825156B2 (ja) |
JP (1) | JP6071009B2 (ja) |
CN (1) | CN105655393B (ja) |
TW (1) | TWI580044B (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2018032848A (ja) * | 2016-08-25 | 2018-03-01 | 株式会社村田製作所 | 半導体装置 |
US10734310B2 (en) * | 2017-12-06 | 2020-08-04 | Murata Manufacturing Co., Ltd. | Semiconductor apparatus |
CN117038665A (zh) * | 2017-12-06 | 2023-11-10 | 株式会社村田制作所 | 半导体装置 |
JP2019102724A (ja) | 2017-12-06 | 2019-06-24 | 株式会社村田製作所 | 半導体素子 |
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