CN105655393B - 化合物半导体装置 - Google Patents

化合物半导体装置 Download PDF

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CN105655393B
CN105655393B CN201510829130.0A CN201510829130A CN105655393B CN 105655393 B CN105655393 B CN 105655393B CN 201510829130 A CN201510829130 A CN 201510829130A CN 105655393 B CN105655393 B CN 105655393B
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CN105655393A (zh
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佐佐木健次
黒谷欣吾
北原崇
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Murata Manufacturing Co Ltd
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Abstract

本发明涉及一种化合物半导体装置。在包括由多个单位晶体管构成的HBT的化合物半导体装置中，使热阻降低。化合物半导体装置具备包括多个单位晶体管的异质结双极晶体管和与多个单位晶体管的发射极电连接的凸块，多个单位晶体管沿第1方向排列，凸块在多个单位晶体管的发射极上沿第1方向延伸配置，多个单位晶体管中的至少一个单位晶体管的发射极从凸块的第1方向上的中心线向与第1方向垂直的第2方向上的一侧偏移配置，多个单位晶体管中的其他至少一个单位晶体管的发射极从凸块的第1方向上的中心线向第2方向上的另一侧偏移配置。

Description

化合物半导体装置
技术领域
本发明涉及化合物半导体装置以及功率放大模块。
背景技术
在便携式电话等移动体通信器中，为了放大向基站发送的射频(RF：RadioFrequency)信号的功率而使用功率放大模块。另外，在功率放大模块中，作为放大元件使用包括异质结双极晶体管(HBT：Heterojunction Bipolar Transistor)的化合物半导体装置。
近年来，伴随着移动体通信器的小型化，也谋求化合物半导体装置的小型化。因此，例如如专利文献1所公开的那样，有时作为将化合物半导体装置安装于模块基板的方法，不使用引线键合，而使用倒装芯片安装。
专利文献1：日本特开2000-106386号公报
另外，在专利文献1所公开的结构中，多个单位晶体管直线排列，在各单位晶体管的发射极上设置有凸块。在这样的结构中，作为热源的发射极集中，所以存在导致热阻的增加的可能性。
发明内容
本发明是鉴于这样的情况而完成的，其目的在于在包括由多个单位晶体管构成的HBT的化合物半导体装置中，降低热阻。
本发明的一侧面所涉及的化合物半导体装置，具备：包括多个单位晶体管的异质结双极晶体管、和与多个单位晶体管的发射极电连接的凸块，其中，多个单位晶体管沿第1方向排列，凸块在多个单位晶体管的发射极上沿第1方向延伸配置，多个单位晶体管中的至少一个单位晶体管的发射极从凸块的第1方向上的中心线向与第1方向垂直的第2方向上的一侧偏移配置，多个单位晶体管中的其他至少一个单位晶体管的发射极从凸块的第1方向上的中心线向第2方向上的另一侧偏移配置。
根据本发明，在包括由多个单位晶体管构成的HBT的化合物半导体装置中，能够降低热阻。
附图说明
图1是本发明的一实施方式的化合物半导体装置100A的俯视图。
图2是构成化合物半导体装置100A的单元的电路图。
图3是图1所示的A-A’线处的剖面图。
图4是表示对化合物半导体装置100A进行了倒装芯片安装的例子的图。
图5A是表示发射极330沿凸块140的中心线150直线排列的例子的图(直线配置)。
图5B是表示在直线配置中，发射极330从凸块140的中心线150向一侧(+Y侧)偏移来排列的例子的图。
图5C是表示与化合物半导体装置100A同样地，发射极330从凸块140的中心线150向一侧(+Y侧)以及另一侧(-Y侧)交替地偏移来排列的例子的图。
图6是表示发射极330的偏移量与热阻的关系的模拟。
图7是本发明的一实施方式的化合物半导体装置100B的俯视图。
图8是本发明的一实施方式的化合物半导体装置100C的俯视图。
图9是本发明的一实施方式的化合物半导体装置100D的俯视图。
图10是表示本发明的一实施方式的功率放大模块1000的结构的图。
附图标记说明
100A、100B、100C、100D…化合物半导体装置；110…单位晶体管；111…电容；112…电阻；120…单元；130…RF输入布线；131…基极布线；132…偏置控制布线；133…集电极布线；300…子集电极；310…集电极；311…集电极电极；320…基极；321…基极电极；330…发射极；331…发射极电极；340…GaAs基板；400…表面安装部件；410…模块基板；420…接地面。
具体实施方式
图1是本发明的一实施方式的化合物半导体装置100A的俯视图。图2是构成化合物半导体装置100A的单元的电路图。图3是图1所示的A-A’线处的剖面图。图4是表示对化合物半导体装置100A进行了倒装芯片安装的例子的图。参照图1～4，对化合物半导体装置100A的结构进行说明。
如图1所示，化合物半导体装置100A包括多个单位晶体管110。利用这些多个单位晶体管110形成异质结双极晶体管(HBT)。单位晶体管110也被称为“指(finger)”。在图1所示的例子中，利用16个单位晶体管110形成HBT。即，HBT的指数目为16。另外，HBT的指数目并不限定于16。
单位晶体管110与电容111及电阻112一起构成单元120。在图2中示出单元120的电路图。各单元120将所输入的RF信号放大并从单位晶体管110的集电极输出放大信号。多个单元120并联连接，构成放大RF信号的放大器。
电容111形成在被输入RF信号的RF输入布线130和与单位晶体管110的基极连接的基极布线131之间。电容111例如能够形成在RF输入布线130与基极布线131之间，作为MIM(Metal-Insulator-Metal：金属-绝缘体-金属)电容。电容111去掉RF信号的DC分量后输出。
对于电阻112而言，一端与偏置控制布线132连接，另一端与基极布线131连接。经由该电阻112，向单位晶体管110的基极供给偏压。
单位晶体管110的基极与基极布线131连接。单位晶体管110的集电极与集电极布线133连接。单位晶体管110的发射极与发射极布线134连接。如图1所示，发射极布线134与凸块140连接。通过凸块140接地，单位晶体管110的发射极接地。
参照图3，对单位晶体管110的剖面构造进行说明。单位晶体管110包括子集电极300、集电极310、集电极电极311、基极320、基极电极321、发射极330以及发射极电极331。
子集电极300例如形成在砷化镓(GaAs)基板340上。集电极310及集电极电极311形成在子集电极300上。基极320形成在集电极310上。基极电极321形成在基极320上。
如图3所示，集电极310经由子集电极300及集电极电极311与集电极布线133电连接。另外，基极320经由基极电极321与基极布线131电连接。而且，发射极330经由发射极电极331及发射极布线134、332与凸块140电连接。如图3所示，凸块140层叠在发射极330上而形成。
如图4所示，化合物半导体装置100A与表面安装部件(SMD：Surface MountDevice)400等一起被安装在模块基板410上。对化合物半导体装置100A来说，使凸块140朝向模块基板410侧(即，面朝下)并使凸块140与接地面420连接。
这里，对化合物半导体装置100A中的单位晶体管110及凸块140的配置进行说明。如图1所示，多个单位晶体管110在图1所示的X轴方向(第1方向)上排列配置。另外，凸块140形成在多个单位晶体管110的发射极330上，并且沿X轴方向延伸。而且，从凸块140侧观察，各单位晶体管110的发射极330的至少一部分被凸块140覆盖。另外，多个单位晶体管110的发射极330从凸块140的中心线150向图1所示的Y轴方向(第2方向)上的一侧(例如+Y侧)及另一侧(例如-Y侧)交替地偏移来配置。
通过这样的配置，与将所有的单位晶体管110的发射极330沿凸块140的中心线150配置在一直线上的情况相比，能够使热源(发射极330)的位置分散。由此，在化合物半导体装置100A中，与将所有的单位晶体管110的发射极330沿凸块140的中心线150配置在一直线上的情况相比，能够使热阻降低。
另外，如图1所示，在化合物半导体装置100A中，各单位晶体管110的发射极330的一部分未被凸块140覆盖。由此，与由凸块140覆盖发射极330的全部的情况相比，能够缓和向发射极330的应力，能够延长单位晶体管110的通电寿命。
参照图5A～图5C及图6，对基于凸块140与发射极330的位置关系的热阻的变化进行说明。
图5A是表示发射极330沿凸块140的中心线150直线排列的例子的图(直线配置)。图5B是表示在直线配置中，发射极330从凸块140的中心线150向一侧(+Y侧)偏移来排列的例子的图。图5C是表示与化合物半导体装置100A同样地，发射极330从凸块140的中心线150向一侧(+Y侧)及另一侧(-Y侧)交替地偏移来排列的例子的图。
图6是表示发射极330的偏移量与热阻的关系的模拟结果。在图6中，横轴表示发射极330的中心距凸块140的中心线的偏移量(μm)，纵轴表示热阻(℃/W)。另外，在图6中，“直线配置”的线与图5A及图5B的配置对应，“交错配置”的线与图5C的配置对应。
此外，在设凸块140的Y轴方向的长度为75μm，设发射极330的Y轴方向的长度为40μm，并使发射极330的偏移量按0μm、10μm、20μm、30μm、40μm、50μm变化的情况下进行模拟。
另外，发射极330的偏移为0μm、10μm、20μm、30μm、40μm、50μm的情况下的、从凸块140的端部起的发射极330的突出量d依次为0μm、0μm、2.5μm、12.5μm、22.5μm、32.5μm。
如图6所示，在“直线配置”中，若如图5B所示那样增大发射极330的偏移，则与不使发射极330偏移的情况(A点)相比，在偏移量为10μm的情况下能够看出热阻的微小的降低，但是伴随着偏移量的增加，热阻增加。
另一方面，如图6所示，在“交错配置”中，在偏移量为10μm、20μm、30μm的点处，与不使发射极330偏移的情况(A点)相比，热阻也降低。
像这样，从模拟结果也可以知道：通过将发射极330从凸块140的中心线向一侧(+Y侧)和另一侧(-Y侧)偏移配置，与不使发射极330偏移的情况(A点)相比，能够使热阻降低。
另外，根据模拟结果，在“交错配置”中，在发射极330的突出量d为2.5μm(偏移量20μm)及12.5μm(偏移量30μm)的情况下，与不使发射极330偏移的情况(A点)相比，也能够使热阻降低。即，在“交错配置”中，在各单位晶体管110的发射极330的一部分未被凸块140覆盖的状态下，也能够使热阻降低。而且，在这种结构的情况下，与由凸块140覆盖发射极330的全部的情况相比，能够缓和向发射极330的应力，能够延长单位晶体管110的通电寿命。
接下来，对化合物半导体装置100A的变形例进行说明。其中，对与化合物半导体装置100A相同的要素赋予相同的附图标记并省略说明。
图7是本发明的一实施方式的化合物半导体装置100B的俯视图。在化合物半导体装置100B中，多个单位晶体管110被分割成多个区块，按每一区块设置有凸块140。具体而言，按每8个单位晶体管110，设置有区块700、710。
图8是本发明的一实施方式的化合物半导体装置100C的俯视图。在化合物半导体装置100C中，也将多个单位晶体管110分割成多个区块，按每一区块设置有凸块140。具体而言，按每4个单位晶体管110，设置有区块800、810、820、830。
图9是本发明的一实施方式的化合物半导体装置100D的俯视图。在化合物半导体装置100D中，单位晶体管110每2个交替地偏移来配置。像这样，单位晶体管110并不限于每1个，也可以各多个交替地偏移来配置。此外，在图9所示的例子中，每2个汇集单位晶体管110，但汇集单位晶体管110的个数也可以是3个以上。
在图7～图9所示的结构中，通过将单位晶体管110的发射极330从凸块140的中心线偏移地配置，也与化合物半导体装置100A同样地，能够使热阻降低。
图10是表示本发明的一实施方式的功率放大模块1000的结构的图。功率放大模块1000具备3级放大器1010、1020、1030。放大器1010、1020、1030分别将所输入的RF信号放大并输出。在功率放大模块1000中，例如末级的放大器1030使用化合物半导体装置100A构成。像这样，通过对放大器1030使用化合物半导体装置100A，能够使放大器1030中的热阻降低。此外，也能够将化合物半导体装置100A使用于放大器1010、1020，但末级的放大器1030的电流量尤其大，所以通过将化合物半导体装置100A使用于放大器1030而产生的热阻的降低效果较大。另外，并不局限于化合物半导体装置100A，也能够将其他的化合物半导体装置100B～100D应用于功率放大模块1000。
以上，对本发明的实施方式进行了说明。根据本实施方式，多个单位晶体管110中的至少一个单位晶体管110的发射极330从凸块140的中心线150向一侧(例如+Y侧)偏移配置，多个单位晶体管110中的其他至少一个单位晶体管110的发射极330从凸块140的中心线150向另一侧(例如-Y侧)偏移配置。
根据这样的结构，与将所有的单位晶体管110的发射极330沿凸块140的中心线150配置在一直线上的情况相比，能够使热源的位置分散。由此，在化合物半导体装置100A～100D中，与将所有的单位晶体管110的发射极330沿凸块140的中心线150配置在一直线上的情况相比，也能够使热阻降低。
此外，在化合物半导体装置100A～100D中，将所有的单位晶体管从凸块140的中心线150偏移配置，但也可以一部分的单位晶体管110配置在中心线150上。
另外，根据本实施方式，能够构成为从凸块140的中心线150偏移配置的发射极330的一部分未被凸块140覆盖。由此，与由凸块140覆盖发射极330的全部的情况相比，能够缓和向发射极330的应力，能够延长单位晶体管110的通电寿命。
另外，根据本实施方式，能够如化合物半导体装置100A、100B那样，将多个单位晶体管110的发射极330从凸块140的中心线150向一侧(例如+Y侧)和另一侧(例如-Y侧)交替地偏移来配置。根据这样的结构，与将所有的单位晶体管110的发射极330沿凸块140的中心线150配置在一直线上的情况相比，能够使热阻降低。
另外，根据本实施方式，能够如化合物半导体装置100C、100D那样，将上述多个单位晶体管110的发射极330从凸块140的中心线150向一侧(例如+Y侧)和另一侧(例如-Y侧)各多个交替地偏移来配置。在这样的结构中，与将所有的单位晶体管110的发射极330沿凸块140的中心线150配置一直线上的情况相比，也能够使热阻降低。
另外，根据本实施方式，能够将化合物半导体装置100A～100D中的HBT作为放大RF信号的放大元件，来构成功率放大模块。由此，能够构成降低了热阻的功率放大模块。此外，在本实施方式中，示出了将化合物半导体装置100A～100D应用于功率放大模块1000的例子，但是本发明的化合物半导体装置的应用范围并不局限于功率放大模块。
另外，根据本实施方式，在功率放大模块具备多级放大器的情况下，能够将化合物半导体装置100A～100D中的HBT作为末级的放大器中的放大元件。通过对电流量大的末级的放大器1030应用化合物半导体装置100A～100D，能够增大热阻的降低效果。
此外，以上说明了的各实施方式仅使本发明的理解容易，并不是用于对本发明来进行限定解释的。本发明能够不脱离其主旨地进行变更/改良，并且本发明也包括其等效物。即，本领域技术人员对各实施方式添加了适当设计变更后的方案，只要具备本发明的特征，就包含于本发明的范围内。例如，各实施方式所具备的各元件以及其配置、材料、条件、形状、大小等，并不限定于所例示的内容，能够进行适当变更。另外，各实施方式所具备的各元件，只要技术上可能，就能够进行组合，组合这些之后得到的方案，只要包括本发明的特征，就包含于本发明的范围内。

Claims (5)

1.一种化合物半导体装置，具备：包括多个单位晶体管的异质结双极晶体管；以及与所述多个单位晶体管的发射极电连接的凸块，其中，
所述多个单位晶体管沿第1方向排列，
所述凸块在所述多个单位晶体管的发射极上沿所述第1方向延伸配置，
所述多个单位晶体管中的至少一个单位晶体管的发射极从所述凸块的所述第1方向上的中心线向与所述第1方向垂直的第2方向上的一侧偏移配置，
所述多个单位晶体管中的其他至少一个单位晶体管的发射极从所述凸块的所述第1方向上的中心线向所述第2方向上的另一侧偏移配置，
从所述凸块的所述中心线偏移配置的发射极的一部分未被所述凸块覆盖。
2.根据权利要求1所述的化合物半导体装置，其中，
所述多个单位晶体管的发射极从所述凸块的所述中心线向所述一侧和所述另一侧交替地偏移来配置。
3.根据权利要求1所述的化合物半导体装置，其中，
所述多个单位晶体管的发射极从所述凸块的所述中心线向所述一侧和所述另一侧各多个交替地偏移来配置。
4.一种功率放大模块，具备权利要求1～3中任意一项所记载的化合物半导体装置，其中，
所述异质结双极晶体管是对射频信号进行放大的放大元件。
5.根据权利要求4所述的功率放大模块，其中，
所述功率放大模块具备多级放大器，
所述异质结双极晶体管是所述多级放大器中的末级的放大器中的所述放大元件。
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US5734193A (en) * 1994-01-24 1998-03-31 The United States Of America As Represented By The Secretary Of The Air Force Termal shunt stabilization of multiple part heterojunction bipolar transistors
CN1501510A (zh) * 2002-09-30 2004-06-02 M/A-Com公司 小型非线性异质结双极晶体管阵列

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