JP2015135966A5 - - Google Patents

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Publication number
JP2015135966A5
JP2015135966A5 JP2015003197A JP2015003197A JP2015135966A5 JP 2015135966 A5 JP2015135966 A5 JP 2015135966A5 JP 2015003197 A JP2015003197 A JP 2015003197A JP 2015003197 A JP2015003197 A JP 2015003197A JP 2015135966 A5 JP2015135966 A5 JP 2015135966A5
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JP
Japan
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layer
emitter
ingap
ingaas
gaas
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JP2015003197A
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English (en)
Japanese (ja)
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JP6392128B2 (ja
JP2015135966A (ja
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Priority claimed from US14/157,096 external-priority patent/US9231088B2/en
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Publication of JP2015135966A5 publication Critical patent/JP2015135966A5/ja
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JP2015003197A 2014-01-16 2015-01-09 ヘテロ接合バイポーラトランジスタ用のエミッタコンタクトエピタキシャル構造およびオーミックコンタクト形成 Active JP6392128B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/157,096 US9231088B2 (en) 2014-01-16 2014-01-16 Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor
US14/157,096 2014-01-16

Publications (3)

Publication Number Publication Date
JP2015135966A JP2015135966A (ja) 2015-07-27
JP2015135966A5 true JP2015135966A5 (enExample) 2018-02-15
JP6392128B2 JP6392128B2 (ja) 2018-09-19

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JP2015003197A Active JP6392128B2 (ja) 2014-01-16 2015-01-09 ヘテロ接合バイポーラトランジスタ用のエミッタコンタクトエピタキシャル構造およびオーミックコンタクト形成

Country Status (4)

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US (2) US9231088B2 (enExample)
JP (1) JP6392128B2 (enExample)
DE (1) DE102015000189A1 (enExample)
TW (1) TWI655773B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9231088B2 (en) 2014-01-16 2016-01-05 Triquint Semiconductor, Inc. Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor
US10256329B2 (en) * 2015-09-04 2019-04-09 Win Semiconductors Corp. Heterojunction bipolar transistor
US9905678B2 (en) 2016-02-17 2018-02-27 Qorvo Us, Inc. Semiconductor device with multiple HBTs having different emitter ballast resistances
US10546852B2 (en) * 2018-05-03 2020-01-28 Qualcomm Incorporated Integrated semiconductor devices and method of fabricating the same
JPWO2021214866A1 (enExample) * 2020-04-21 2021-10-28

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005260255A (ja) * 1996-02-19 2005-09-22 Sharp Corp 化合物半導体装置及びその製造方法
GB2341974A (en) * 1998-09-22 2000-03-29 Secr Defence Semiconductor device incorporating a superlattice structure
JP3566707B2 (ja) * 2002-03-26 2004-09-15 ユーディナデバイス株式会社 ヘテロ接合バイポーラトランジスタ
US7696536B1 (en) * 2003-08-22 2010-04-13 The Board Of Trustees Of The University Of Illinois Semiconductor method and device
JP2005150531A (ja) * 2003-11-18 2005-06-09 Nec Compound Semiconductor Devices Ltd 半導体装置
JP2006210452A (ja) * 2005-01-26 2006-08-10 Sony Corp 半導体装置
JP2006303244A (ja) * 2005-04-21 2006-11-02 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタ及びその製造方法
JP2007103925A (ja) * 2005-09-12 2007-04-19 Hitachi Cable Ltd 半導体装置及びその製造方法
JP2007189200A (ja) * 2005-12-13 2007-07-26 Hitachi Cable Ltd トランジスタ用エピタキシャルウエハおよびトランジスタ
US9231088B2 (en) 2014-01-16 2016-01-05 Triquint Semiconductor, Inc. Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor

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