JP2005347499A5 - - Google Patents

Download PDF

Info

Publication number
JP2005347499A5
JP2005347499A5 JP2004165188A JP2004165188A JP2005347499A5 JP 2005347499 A5 JP2005347499 A5 JP 2005347499A5 JP 2004165188 A JP2004165188 A JP 2004165188A JP 2004165188 A JP2004165188 A JP 2004165188A JP 2005347499 A5 JP2005347499 A5 JP 2005347499A5
Authority
JP
Japan
Prior art keywords
layer
epitaxial wafer
type
type algaas
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004165188A
Other languages
English (en)
Japanese (ja)
Other versions
JP4770130B2 (ja
JP2005347499A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004165188A priority Critical patent/JP4770130B2/ja
Priority claimed from JP2004165188A external-priority patent/JP4770130B2/ja
Publication of JP2005347499A publication Critical patent/JP2005347499A/ja
Publication of JP2005347499A5 publication Critical patent/JP2005347499A5/ja
Application granted granted Critical
Publication of JP4770130B2 publication Critical patent/JP4770130B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004165188A 2004-06-03 2004-06-03 電界効果トランジスタ用エピタキシャルウェハ及び高電子移動度トランジスタ用エピタキシャルウェハ Expired - Fee Related JP4770130B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004165188A JP4770130B2 (ja) 2004-06-03 2004-06-03 電界効果トランジスタ用エピタキシャルウェハ及び高電子移動度トランジスタ用エピタキシャルウェハ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004165188A JP4770130B2 (ja) 2004-06-03 2004-06-03 電界効果トランジスタ用エピタキシャルウェハ及び高電子移動度トランジスタ用エピタキシャルウェハ

Publications (3)

Publication Number Publication Date
JP2005347499A JP2005347499A (ja) 2005-12-15
JP2005347499A5 true JP2005347499A5 (enExample) 2006-10-12
JP4770130B2 JP4770130B2 (ja) 2011-09-14

Family

ID=35499593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004165188A Expired - Fee Related JP4770130B2 (ja) 2004-06-03 2004-06-03 電界効果トランジスタ用エピタキシャルウェハ及び高電子移動度トランジスタ用エピタキシャルウェハ

Country Status (1)

Country Link
JP (1) JP4770130B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9881877B2 (en) 2016-03-31 2018-01-30 Tdk Corporation Electronic circuit package using composite magnetic sealing material
US9818518B2 (en) 2016-03-31 2017-11-14 Tdk Corporation Composite magnetic sealing material

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH076957A (ja) * 1993-01-13 1995-01-10 Sumitomo Chem Co Ltd 半導体エピタキシャル基板
JP2003234357A (ja) * 2002-02-07 2003-08-22 Hitachi Cable Ltd 電界効果トランジスタ

Similar Documents

Publication Publication Date Title
US7816707B2 (en) Field-effect transistor with nitride semiconductor and method for fabricating the same
JP5469098B2 (ja) 電界効果トランジスタ及びその製造方法
US9275998B2 (en) Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel
JP6174874B2 (ja) 半導体装置
US20160141404A1 (en) STRUCTURE FOR A GALLIUM NITRIDE (GaN) HIGH ELECTRON MOBILITY TRANSISTOR
US20170033210A1 (en) Breakdown Resistant HEMT Substrate and Device
JP6330148B2 (ja) 半導体装置
WO2007007548A1 (ja) トランジスタ及びその動作方法
US20100327320A1 (en) Nitride semiconductor device
Yuan et al. Normally off AlGaN/GaN metal–2DEG tunnel-junction field-effect transistors
CN102856373B (zh) 高电子迁移率晶体管
US20070232008A1 (en) Semiconductor device and hetero-junction bipolar transistor
WO2003103037A1 (fr) Dispositif a semi-conducteur
JP2011108712A (ja) 窒化物半導体装置
JP2004200433A (ja) 半導体装置
JP2011066464A (ja) 電界効果トランジスタ
JP5871785B2 (ja) ヘテロ接合電界効果トランジスタ及びその製造方法
JP2007142365A (ja) p型ひずみInGaNベース層を有するGaNヘテロ接合バイポーラトランジスタとその製造方法
TWI222750B (en) Voltage adjustable multi-stage extrinsic transconductance amplification HEMT
JP2013239735A (ja) 電界効果トランジスタ
JP2006210725A (ja) 半導体装置
JP2005347499A5 (enExample)
CN110518067B (zh) 基于沟道阵列的异质结场效应晶体管及其制作方法和应用
Kuroda et al. HEMT with nonalloyed ohmic contacts using n+-InGaAs cap layer
JP3077599B2 (ja) 電界効果トランジスタ