JP4770130B2 - 電界効果トランジスタ用エピタキシャルウェハ及び高電子移動度トランジスタ用エピタキシャルウェハ - Google Patents
電界効果トランジスタ用エピタキシャルウェハ及び高電子移動度トランジスタ用エピタキシャルウェハ Download PDFInfo
- Publication number
- JP4770130B2 JP4770130B2 JP2004165188A JP2004165188A JP4770130B2 JP 4770130 B2 JP4770130 B2 JP 4770130B2 JP 2004165188 A JP2004165188 A JP 2004165188A JP 2004165188 A JP2004165188 A JP 2004165188A JP 4770130 B2 JP4770130 B2 JP 4770130B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- epitaxial wafer
- electron mobility
- channel
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims description 31
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 19
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 16
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 description 34
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 9
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000003574 free electron Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QTQRGDBFHFYIBH-UHFFFAOYSA-N tert-butylarsenic Chemical compound CC(C)(C)[As] QTQRGDBFHFYIBH-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical group CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- HTDIUWINAKAPER-UHFFFAOYSA-N trimethylarsine Chemical compound C[As](C)C HTDIUWINAKAPER-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004165188A JP4770130B2 (ja) | 2004-06-03 | 2004-06-03 | 電界効果トランジスタ用エピタキシャルウェハ及び高電子移動度トランジスタ用エピタキシャルウェハ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004165188A JP4770130B2 (ja) | 2004-06-03 | 2004-06-03 | 電界効果トランジスタ用エピタキシャルウェハ及び高電子移動度トランジスタ用エピタキシャルウェハ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005347499A JP2005347499A (ja) | 2005-12-15 |
| JP2005347499A5 JP2005347499A5 (enExample) | 2006-10-12 |
| JP4770130B2 true JP4770130B2 (ja) | 2011-09-14 |
Family
ID=35499593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004165188A Expired - Fee Related JP4770130B2 (ja) | 2004-06-03 | 2004-06-03 | 電界効果トランジスタ用エピタキシャルウェハ及び高電子移動度トランジスタ用エピタキシャルウェハ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4770130B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9881877B2 (en) | 2016-03-31 | 2018-01-30 | Tdk Corporation | Electronic circuit package using composite magnetic sealing material |
| US9818518B2 (en) | 2016-03-31 | 2017-11-14 | Tdk Corporation | Composite magnetic sealing material |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH076957A (ja) * | 1993-01-13 | 1995-01-10 | Sumitomo Chem Co Ltd | 半導体エピタキシャル基板 |
| JP2003234357A (ja) * | 2002-02-07 | 2003-08-22 | Hitachi Cable Ltd | 電界効果トランジスタ |
-
2004
- 2004-06-03 JP JP2004165188A patent/JP4770130B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005347499A (ja) | 2005-12-15 |
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