JP2005347499A5 - - Google Patents

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JP2005347499A5
JP2005347499A5 JP2004165188A JP2004165188A JP2005347499A5 JP 2005347499 A5 JP2005347499 A5 JP 2005347499A5 JP 2004165188 A JP2004165188 A JP 2004165188A JP 2004165188 A JP2004165188 A JP 2004165188A JP 2005347499 A5 JP2005347499 A5 JP 2005347499A5
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Japan
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layer
epitaxial wafer
type
type algaas
semi
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JP2004165188A
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Japanese (ja)
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JP4770130B2 (en
JP2005347499A (en
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Publication of JP2005347499A5 publication Critical patent/JP2005347499A5/ja
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III−Ｖ族化合物半導体基板上に、少なくとも、チャネル層、δドープ層を有する電界効果トランジスタ用エピタキシャルウェハにおいて、前記III−Ｖ族化合物半導体基板の表面が、（１００）面から［０１−１］方向または［０−１１］方向に、０．４°〜１．１°傾斜していることを特徴とする電界効果トランジスタ用エピタキシャルウェハ。   In an epitaxial wafer for a field effect transistor having at least a channel layer and a δ-doped layer on a group III-V compound semiconductor substrate, the surface of the group III-V compound semiconductor substrate is [01-1] from the (100) plane. An epitaxial wafer for a field effect transistor, which is inclined by 0.4 ° to 1.1 ° in the direction or [0-11] direction. 半絶縁性ＧａＡｓ基板上に、少なくとも、ｉ型ＡｌＧａＡｓバッファ層、ｉ型ＩｎＧａＡｓチャネル層、ｉ型ＡｌＧａＡｓスペーサ層、Ｓｉδドープ層、ｉ型ＡｌＧａＡｓショットキーコンタクト層、ｎ型ＧａＡｓオーミックコンタクト層を有する高電子移動度トランジスタ用エピタキシャルウェハにおいて、前記半絶縁性ＧａＡｓ基板の表面が、（１００）面から［０１−１］方向または［０−１１］方向に、０．４°〜１．１°傾斜していることを特徴とする高電子移動度トランジスタ用エピタキシャルウェハ。 High electrons having at least an i-type AlGaAs buffer layer, an i-type InGaAs channel layer , an i-type AlGaAs spacer layer, an Siδ-doped layer, an i-type AlGaAs Schottky contact layer, and an n-type GaAs ohmic contact layer on a semi-insulating GaAs substrate In the epitaxial wafer for a mobility transistor, the surface of the semi-insulating GaAs substrate is inclined by 0.4 ° to 1.1 ° from the (100) plane in the [01-1] direction or the [0-11] direction. An epitaxial wafer for a high electron mobility transistor.
JP2004165188A 2004-06-03 2004-06-03 Epitaxial wafer for field effect transistor and epitaxial wafer for high electron mobility transistor Expired - Fee Related JP4770130B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004165188A JP4770130B2 (en) 2004-06-03 2004-06-03 Epitaxial wafer for field effect transistor and epitaxial wafer for high electron mobility transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004165188A JP4770130B2 (en) 2004-06-03 2004-06-03 Epitaxial wafer for field effect transistor and epitaxial wafer for high electron mobility transistor

Publications (3)

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JP2005347499A JP2005347499A (en) 2005-12-15
JP2005347499A5 true JP2005347499A5 (en) 2006-10-12
JP4770130B2 JP4770130B2 (en) 2011-09-14

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JP2004165188A Expired - Fee Related JP4770130B2 (en) 2004-06-03 2004-06-03 Epitaxial wafer for field effect transistor and epitaxial wafer for high electron mobility transistor

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9881877B2 (en) 2016-03-31 2018-01-30 Tdk Corporation Electronic circuit package using composite magnetic sealing material
US9818518B2 (en) 2016-03-31 2017-11-14 Tdk Corporation Composite magnetic sealing material

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH076957A (en) * 1993-01-13 1995-01-10 Sumitomo Chem Co Ltd Semiconductor epitaxial substrate
JP2003234357A (en) * 2002-02-07 2003-08-22 Hitachi Cable Ltd Field effect transistor

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