JP2016065851A - 膜接合構造体、その製法及びガスセンサ - Google Patents
膜接合構造体、その製法及びガスセンサ Download PDFInfo
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- JP2016065851A JP2016065851A JP2015052402A JP2015052402A JP2016065851A JP 2016065851 A JP2016065851 A JP 2016065851A JP 2015052402 A JP2015052402 A JP 2015052402A JP 2015052402 A JP2015052402 A JP 2015052402A JP 2016065851 A JP2016065851 A JP 2016065851A
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- Prior art keywords
- membrane
- sensor element
- film
- slurry
- gas
- Prior art date
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- Granted
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- 238000001035 drying Methods 0.000 claims abstract description 36
- 239000000843 powder Substances 0.000 claims abstract description 32
- 238000000465 moulding Methods 0.000 claims abstract description 19
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- 238000006116 polymerization reaction Methods 0.000 claims abstract description 4
- 238000005259 measurement Methods 0.000 claims description 60
- 239000007784 solid electrolyte Substances 0.000 claims description 44
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 24
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- QCXNXRUTKSIZND-UHFFFAOYSA-N 6-(dimethylamino)hexan-1-ol Chemical compound CN(C)CCCCCCO QCXNXRUTKSIZND-UHFFFAOYSA-N 0.000 description 2
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- 150000004767 nitrides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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- 239000011787 zinc oxide Substances 0.000 description 2
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- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/406—Cells and probes with solid electrolytes
- G01N27/407—Cells and probes with solid electrolytes for investigating or analysing gases
- G01N27/4077—Means for protecting the electrolyte or the electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
- C04B35/111—Fine ceramics
- C04B35/117—Composites
- C04B35/119—Composites with zirconium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/486—Fine ceramics
- C04B35/488—Composites
- C04B35/4885—Composites with aluminium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62222—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic coatings
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62625—Wet mixtures
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
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Abstract
【解決手段】膜接合構造体の製法は、セラミック基体を用意する工程aと成形型の内部に原料粉、助剤、ゲル化剤及び分散媒として有機溶媒を含むスラリーを入れ、ゲル化剤の重合反応によってスラリーを成形・固化することにより、未焼成体を作製する工程bと、未焼成体の凹み部又は貫通孔にセラミック基体を挿入したあと乾燥してグリーン構造体を得る工程cと、グリーン構造体を焼成する工程dと、を含む。工程cでは、乾燥前の時点で、未焼成体にセラミック基体を挿入したときのクリアランス量をx[μm]、スラリーにおける分散媒の体積割合をy[vol%]としたとき、0≦x≦250,y≧0.067x+30,y≦0.1x+60,y≦70を満たすようにx,yを設定する。
【選択図】図3
Description
(a)セラミック基体を用意する工程と、
(b)成形型の内部に原料粉、重合可能な少なくとも2種類の有機化合物を含むゲル化剤及び分散媒として有機溶媒を含むスラリーを入れ、前記ゲル化剤の重合反応によって前記スラリーを成形・固化することにより、凹み部又は貫通孔を有する未焼成体を作製する工程と、
(c)前記未焼成体の凹み部又は貫通孔に前記セラミック基体を挿入したあと乾燥することによりグリーン構造体を得る工程と、
(d)前記グリーン構造体を焼成することにより、前記未焼成体が焼成されて膜となった膜接合構造体を得る工程と、
を含み、
前記工程(c)では、乾燥前の時点で、前記未焼成体の凹み部又は貫通孔に前記セラミック基体を挿入したときのクリアランス量をx[μm]、前記スラリーにおける前記分散媒の体積割合をy[vol%]としたとき、下記式を満たすようにx,yを設定するものである。
0≦x≦250
y≧0.067x+30
y≦0.1x+60
y≦70
y≦70
y≧0.067x+30
y≦0.1x+60
実施例1として、上述した実施形態の製法により、ガスセンサ100を作製した。まず、工程(a)では、前後方向(長手方向)の長さが70mm、左右方向の幅が4mm、上下方向の厚さが1.5mmのセンサ素子101を作製した。このセンサ素子101の長手方向の両端の端面は1.5mm×4mmの長方形である。なお、センサ素子101を作製するにあたり、セラミックスグリーンシートは、安定化剤のイットリアを4mol%添加したジルコニア粒子と有機バインダーと有機溶剤とを混合し、テープ成形により成形した。
最初に、ディップ用のスラリーを作成した。このスラリーは焼成後に多孔質保護膜となるものである。まず、アルミナ粉末(平均粒径2μm、純度99.9%)44質量部とジルコニア(平均粒径0.3μm、純度90%)49質量部との混合粉末に、焼結助剤(ガラス層を形成する成分)として酸化珪素を7質量部添加した。これらに、有機溶媒としてキシレン/ブタノール混合液を24質量部、分散剤としてポリカルボン酸系重合体を4質量部添加した。更に、レオロジーコントロール剤を添加し、せん断速度0.1sec-1の時の粘度が30〜50万cPとなるように調整した。次に、ディップ用のスラリーに実施例1と同様のセンサ素子をディッピングすることにより、センサ素子表面に未焼成膜を形成した。未焼成膜の前後方向(長手方向)の長さは、実施例1と同様、12mmとした。また、センサ素子をスラリーから引き抜くときの引き抜き速度は1mm/secとし、引き抜き方向は鉛直方向とした 次に、未焼成膜を形成したセンサ素子を乾燥炉を用いて80〜90℃で15分×2回乾燥し、未焼成膜を乾燥させた。乾燥時には、センサ素子のうち未焼成膜が形成された部分を鉛直下向きになるようにした。次に、未焼成膜を焼成した。焼成条件は、実施例1と同じであるため、説明を省略する。このようにして、比較例1のガスセンサを得た。比較例1のガスセンサの多孔質保護膜は、前後方向の長さが12mm、厚みが450μmであった。
実施例1のガスセンサ100につき、多孔質保護膜91の膜厚を調べた。図7はガスセンサ100の説明図であり、(a)は左側面図、(b)は正面図である。図7に示すように、センサ素子101の長手方向の両端面(長方形)の互いに向かい合う長辺の中点を結んだ線CLに沿ってガスセンサ100を切断した。図8はその断面図である。切断面において、多孔質保護膜91の長手方向の長さをX(=12mm)とし、多孔質保護膜91の両端からX/6(=2mm)だけ内側に入った点とその2つの点を結んだ線分(基準線)を4等分する3つの点の合計5点を測定位置MPとした。ここでは、隣合う測定位置MPの間隔は2mmであった。図9は一つの測定位置MPの周辺の断面拡大図である。図9に示すように、測定位置MPで基準線と直交する垂線を引き、多孔質保護膜91の表面からセンサ素子101の表面までの垂線の長さを膜厚dとした。各測定位置MPにおける膜厚dの値を表1に示す。表1では、前端(図8で左側)から後端に向かって2mmおきに並んだ5つの測定位置MPをその順にMP1,MP2,……,MP5と表記した。また、daveは算術平均膜厚を表し、σは標準偏差を表すものとした。比較例1のガスセンサについても、同様にして多孔質保護膜の膜厚を調べた。その結果を表1に併せて示した。表1から明らかなように、実施例1では各測定位置MP(MP1〜MP5)の膜厚dは430〜450μm、標準偏差σは7であり、膜厚dのバラツキは非常に小さかった。これに対して、比較例1では膜厚dは330〜550μm、標準偏差σは85であり、膜厚dのバラツキは大きかった。図10は、実施例1及び比較例1のガスセンサを5本ずつ作製し、それらの膜厚dを測定してグラフ化したものである。図10から明らかなように、実施例1では比較例1に比べて平均膜厚dave(図10で菱形マーク)は同等であったが、ガスセンサの個体間のバラツキ(図10で上下に延びる線分の長さ)は非常に小さかった。
実施例1と同様にして多数のガスセンサ100を製造した。但し、工程(c)では、乾燥前の時点で、未焼成キャップ191の凹み部191aにセンサ素子101を挿入したときのクリアランス量をx[μm]、ゲルキャスト法で用いたスラリーにおける分散媒(有機溶媒)の体積割合をy[vol%]とし、x,yが表2に示す関係となるようにした。そして、80℃で12時間乾燥した後の未焼成キャップ191の様子を観察した。その結果を表2に示す。また、図11は、表2をグラフ化したものである。
y≧0.067x+30
y≦0.1x+60
y≦70
実施例1のガスセンサ100につき、多孔質保護膜91の膜厚を調べた。図7はガスセンサ100の説明図であり、(a)は前面図、(b)は上面図である。図7に示すように、センサ素子101の長手方向の両端面(長方形)の互いに向かい合う長辺の中点を結んだ線CLに沿ってガスセンサ100を切断した。図8はその断面図である。切断面において、多孔質保護膜91の長手方向の長さをX(=12mm)とし、多孔質保護膜91の両端からX/6(=2mm)だけ内側に入った点とその2つの点を結んだ線分(基準線)を4等分する3つの点の合計5点を測定位置MPとした。ここでは、隣合う測定位置MPの間隔は2mmであった。図9は一つの測定位置MPの周辺の断面拡大図である。図9に示すように、測定位置MPで基準線と直交する垂線を引き、多孔質保護膜91の表面からセンサ素子101の表面までの垂線の長さを膜厚dとした。各測定位置MPにおける膜厚dの値を表1に示す。表1では、前端(図8で左側)から後端に向かって2mmおきに並んだ5つの測定位置MPをその順にMP1,MP2,……,MP5と表記した。また、daveは算術平均膜厚を表し、σは標準偏差を表すものとした。比較例1のガスセンサについても、同様にして多孔質保護膜の膜厚を調べた。その結果を表1に併せて示した。表1から明らかなように、実施例1では各測定位置MP(MP1〜MP5)の膜厚dは430〜450μm、標準偏差σは7であり、膜厚dのバラツキは非常に小さかった。これに対して、比較例1では膜厚dは330〜550μm、標準偏差σは85であり、膜厚dのバラツキは大きかった。図10は、実施例1及び比較例1のガスセンサを5本ずつ作製し、それらの膜厚dを測定してグラフ化したものである。図10から明らかなように、実施例1では比較例1に比べて平均膜厚dave(図10で菱形マーク)は同等であったが、ガスセンサの個体間のバラツキ(図10で上下に延びる線分の長さ)は非常に小さかった。
Claims (9)
- (a)セラミック基体を用意する工程と、
(b)成形型の内部に原料粉、重合可能な少なくとも2種類の有機化合物を含むゲル化剤及び分散媒として有機溶媒を含むスラリーを入れ、前記ゲル化剤の重合反応によって前記スラリーを成形・固化することにより、凹み部又は貫通孔を有する未焼成体を作製する工程と、
(c)前記未焼成体の凹み部又は貫通孔に前記セラミック基体を挿入したあと乾燥することによりグリーン構造体を得る工程と、
(d)前記グリーン構造体を焼成することにより、前記未焼成体が焼成されて膜となった膜接合構造体を得る工程と、
を含み、
前記工程(c)では、乾燥前の時点で、前記未焼成体の凹み部又は貫通孔に前記セラミック基体を挿入したときのクリアランス量をx[μm]、前記スラリーにおける前記分散媒の体積割合をy[vol%]としたとき、下記式を満たすようにx,yを設定する、膜接合構造体の製法。
0≦x≦250
y≧0.067x+30
y≦0.1x+60
y≦70 - 前記工程(b)では、中子を用いて前記未焼成体の前記凹み部又は貫通孔を形成する、
請求項1に記載の膜接合構造体の製法。 - 前記膜接合構造体の膜厚が100〜1000μmである、
請求項1又は2に記載の膜接合構造体の製法。 - 前記原料粉は、セラミック粉末であり、
前記スラリーは、前記セラミック粉末の焼結助剤を含むものである、
請求項1〜3のいずれか1項に記載の膜接合構造体の製法。 - 前記成形型は、該成形型を複数個に分割したものを隙間なく密着させたものである、
請求項1〜4のいずれか1項に記載の膜接合構造体の製法。 - 前記セラミック基体は、ジルコニアを主成分とする固体電解質層を備えたセンサ素子である、
請求項1〜5のいずれか1項に記載の膜接合構造体の製法。 - 請求項1〜6のいずれか1項に記載の製法によって製造された膜接合構造体。
- セラミック基体の少なくとも一部の表面に膜が形成された膜接合構造体であって、
前記セラミック基体は、直方体で、長手方向の両端の端面が長方形であり、該長方形の互いに向かい合う長辺の中点を結んだ線に沿って前記膜接合構造体を切断したときの切断面において、前記膜の長手方向の長さをXとし、前記膜の表面の両端からX/6だけ内側に入った点とその2つの点を結んだ線分を4等分する3つの点の合計5点を測定位置とし、各測定位置で前記膜の表面と直交する垂線を引き、前記膜の表面から前記基体の表面までの垂線の長さを膜厚dとしたとき、膜厚dの標準偏差σが10以下である、
膜接合構造体。 - 請求項7又は8に記載の膜接合構造体を備えたガスセンサ。
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