JP2015529012A - アレイ基板の製造方法、アレイ基板及び表示装置 - Google Patents
アレイ基板の製造方法、アレイ基板及び表示装置 Download PDFInfo
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Abstract
Description
本発明の実施例における技術手段をより明瞭に説明するため、以下実施例の図面について簡単に紹介する。なお、下記に説明する図面はただ本発明の実施例の一部であり、本発明を限定することはないのは勿論のことである。
2 データ線
10 基板
11 ゲート電極
12 共通電極線
13 ゲート絶縁層
131 第2ビアホール
141 半導体活性層
142 ソース接続電極
143 ドレイン接続電極
14 第1透明電極
140 金属酸化物薄膜
15 エッチングストップ層
150 エッチングストップ層薄膜
16 ソース電極
17 ドレイン電極
18 パッシベーション層
181 第1ビアホール
182 第3ビアホール
19 第2透明電極
20 第1フォトレジスト
21 第2フォトレジスト
22 第3フォトレジスト
Claims (10)
- 薄膜トランジスタと、第1透明電極と、第2透明電極とを形成するステップを備えるアレイ基板の製造方法において、前記第1透明電極及び第2透明電極によって多次元電界が形成され、第1透明電極を形成するステップは、
半導体特性を有する金属酸化物薄膜を形成するステップと、
前記金属酸化物薄膜の一部に対して金属化処理を行って第1透明電極を形成し、金属化処理されなかった金属酸化物薄膜の部分が半導体活性層を形成するステップと、を備えることを特徴とするアレイ基板の製造方法。 - 前記薄膜トランジスタと、第1透明電極と、第2透明電極とを形成するステップは、
ゲート線と、ゲート電極と、ゲート絶縁層とが形成された基板に、金属酸化物薄膜と、エッチングストップ層薄膜とを順次形成するステップと、
パターニング工程を介して、前記エッチングストップ層に対して処理を行い、TFTチャンネル領域を覆うエッチングストップ層を形成するステップと、
エッチングストップ層に覆われなかった金属酸化物薄膜に対して金属化処理を行い、導体特性を有する金属酸化物薄膜を形成し、金属酸化物薄膜の前記エッチングストップ層に覆われ、且つ金属化処理されなかった部分が半導体活性層を形成するステップと、
パターニング工程を介して、前記導体特性を有する金属酸化物薄膜に対して処理を行い、第1透明電極と、前記半藤体活性層に接続されたソース接続電極及びドレイン接続電極と、を形成するステップと、
前記半導体活性層と、エッチングストップ層と、第1透明電極とが形成された基板に、ソース電極と、ドレイン電極と、データ線と、パッシベーション層と、第2透明電極とを形成し、前記ソース電極は前記ソース接続電極と電気接続され、前記ドレイン電極は前記ドレイン接続電極と電気接続されるステップと、を備えることを特徴とする請求項1に記載のアレイ基板の製造方法。 - ゲート線と、ゲート電極と、ゲート絶縁層とが形成された基板に、金属酸化物薄膜と、エッチングストップ層薄膜とを順次形成する前に、基板にゲート線と、ゲート電極と、共通電極線とを形成するステップ、及び前記基板、前記ゲート線、前記ゲート電極、前記共通電極線の上にゲート絶縁層を形成するステップ、をさらに備え、
半導体活性層と、エッチングストップ層と、第1透明電極とが形成された基板に、ソース電極と、ドレイン電極と、データ線と、パッシベーション層と、第2透明電極とを形成するステップは、半導体活性層と、エッチングストップ層と、第1透明電極とが形成された基板に、データ線と、ソース電極と、前記第1透明電極と電気接続されたドレイン電極とを形成するステップと、第1ビアホールを備えるパッシベーション層を形成し、前記第1ビアホールが前記パッシベーション層と前記ゲート絶縁層とを貫通し、前記共通電極線を露出するステップと、前記パッシベーション層に第2透明電極を形成し、前記第2透明電極が前記第1ビアホールを介して前記共通電極線と電気接続されるステップと、を備えることを特徴とする請求項2に記載のアレイ基板の製造方法。 - ゲート線と、ゲート電極と、ゲート絶縁層とが形成された基板に、金属酸化物薄膜と、エッチングストップ層薄膜とを順次形成する前に、基板にゲート線と、ゲート電極と、共通電極線と、ゲート絶縁層とを形成するステップ、及び、前記ゲート絶縁層に前記第1透明電極及び前記共通電極線とを接続するための第2ビアホールを形成するステップ、をさらに備え、
半導体活性層と、エッチングストップ層と、第1透明電極とが形成された基板に、ソース電極と、ドレイン電極と、データ線と、パッシベーション層と、第2透明電極とを形成するステップは、前記半導体活性層、前記エッチングストップ層、前記第1透明電極とが形成された基板に、ソース電極、ドレイン電極と、データ線とを形成するステップと、第三ビアホールを備えるパッシベーション層を形成し、前記第三ビアホールが前記パッシベーション層を貫通し、前記ドレイン電極を露出するステップと、前記パッシベーション層に第2透明電極を形成し、前記第2透明電極が前記第三ビアホールを介して前記ドレイン電極と電気接続されるステップと、を備えることを特徴とする請求項2に記載のアレイ基板の製造方法。 - 前記金属化酸化物薄膜の一部に対して金属化処理を行って第1透明電極を形成するステップは、
プラズマ工程またはアニール工程を介して、前記金属酸化物薄膜の一部に対して金属化処理を行って第1透明電極を形成するステップを備えることを特徴とする請求項1から請求項4のいずれか1項に記載のアレイ基板の製造方法。 - 前記第1透明電極は画素電極または共通電極であることを特徴とする請求項5に記載のアレイ基板の製造方法。
- 前記金属酸化物薄膜は、半導体特性を有する透明金属酸化物材料を採用することを特徴とする請求項1から請求項6のいずれか1項に記載のアレイ基板の製造方法。
- 前記金属酸化物材料は、InGaZnO、InGaO、ITZO、またはAlZnOのいずれか1つであることを特徴とする請求項7に記載のアレイ基板の製造方法。
- 請求項1から請求項8のいずれか1項に記載のアレイ基板の製造方法によって製造されたことを特徴とするアレイ基板。
- 請求項9に記載のアレイ基板を備えることを特徴とする表示装置。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020514808A (ja) * | 2017-03-17 | 2020-05-21 | 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. | アレイ基板およびその製造方法、表示パネルおよび表示装置 |
KR20200115677A (ko) * | 2018-03-09 | 2020-10-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 함유 재료들을 위한 고압 어닐링 프로세스 |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102790012A (zh) | 2012-07-20 | 2012-11-21 | 京东方科技集团股份有限公司 | 阵列基板的制造方法及阵列基板、显示装置 |
CN103021939B (zh) * | 2012-11-30 | 2015-01-07 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法、显示装置 |
CN103021959B (zh) * | 2012-11-30 | 2014-09-17 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法、显示装置 |
US8981374B2 (en) * | 2013-01-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN103208506A (zh) * | 2013-03-28 | 2013-07-17 | 京东方科技集团股份有限公司 | 阵列基板、显示装置及制作方法 |
US10566455B2 (en) | 2013-03-28 | 2020-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
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TWI649606B (zh) | 2013-06-05 | 2019-02-01 | 日商半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
TWI749810B (zh) | 2013-08-28 | 2021-12-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置 |
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CN103646966B (zh) * | 2013-12-02 | 2016-08-31 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板及其制备方法、显示装置 |
CN103777395A (zh) * | 2014-01-27 | 2014-05-07 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN103901687A (zh) * | 2014-02-20 | 2014-07-02 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
JP6436660B2 (ja) * | 2014-07-07 | 2018-12-12 | 三菱電機株式会社 | 薄膜トランジスタ基板およびその製造方法 |
KR102224457B1 (ko) * | 2014-08-06 | 2021-03-09 | 엘지디스플레이 주식회사 | 표시장치와 그 제조 방법 |
CN104269414B (zh) * | 2014-09-25 | 2018-03-09 | 合肥京东方光电科技有限公司 | 一种阵列基板及其制作方法、显示装置 |
CN104299915B (zh) * | 2014-10-21 | 2017-03-22 | 北京大学深圳研究生院 | 金属氧化物薄膜晶体管制备方法 |
CN104409418B (zh) * | 2014-11-13 | 2018-02-13 | 京东方科技集团股份有限公司 | 一种薄膜晶体管阵列基板及其制备方法、显示装置 |
JP6501514B2 (ja) * | 2014-12-24 | 2019-04-17 | 三菱電機株式会社 | 薄膜トランジスタ基板およびその製造方法 |
CN104795407B (zh) | 2015-04-23 | 2016-02-24 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示面板、显示装置 |
JP6478819B2 (ja) * | 2015-06-04 | 2019-03-06 | 三菱電機株式会社 | 薄膜トランジスタ基板およびその製造方法 |
CN104966698B (zh) * | 2015-07-16 | 2018-07-17 | 深圳市华星光电技术有限公司 | 阵列基板、阵列基板的制造方法及显示装置 |
CN105161455A (zh) * | 2015-07-31 | 2015-12-16 | 深圳市华星光电技术有限公司 | 一种ffs阵列基板及其制造方法和显示装置 |
CN105093763A (zh) * | 2015-08-19 | 2015-11-25 | 京东方科技集团股份有限公司 | 一种阵列基板、其制作方法、液晶显示面板及显示装置 |
CN105226015B (zh) * | 2015-09-28 | 2018-03-13 | 深圳市华星光电技术有限公司 | 一种tft阵列基板及其制作方法 |
KR102148491B1 (ko) * | 2015-12-14 | 2020-08-26 | 엘지디스플레이 주식회사 | 박막트랜지스터 기판 |
CN105633016B (zh) * | 2016-03-30 | 2019-04-02 | 深圳市华星光电技术有限公司 | Tft基板的制作方法及制得的tft基板 |
CN105810689B (zh) * | 2016-03-31 | 2019-04-02 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
CN105974699B (zh) * | 2016-06-29 | 2019-05-28 | 深圳市华星光电技术有限公司 | 阵列基板及其制造方法、液晶显示面板 |
US10475822B2 (en) | 2016-11-02 | 2019-11-12 | Boe Technology Group Co., Ltd. | Array substrate, display panel and display apparatus having the same, and fabricating method thereof |
CN107154409A (zh) * | 2017-05-27 | 2017-09-12 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板、显示装置 |
CN107634034A (zh) * | 2017-09-15 | 2018-01-26 | 惠科股份有限公司 | 主动阵列开关的制造方法 |
CN110610949A (zh) * | 2019-10-23 | 2019-12-24 | 成都中电熊猫显示科技有限公司 | 阵列基板的制作方法及阵列基板 |
CN113871401A (zh) * | 2021-09-24 | 2021-12-31 | Tcl华星光电技术有限公司 | 薄膜晶体管、显示面板及其制备方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003050405A (ja) * | 2000-11-15 | 2003-02-21 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタアレイ、その製造方法およびそれを用いた表示パネル |
JP2004310036A (ja) * | 2002-12-09 | 2004-11-04 | Lg Philips Lcd Co Ltd | 液晶表示装置用アレイ基板の製造方法 |
JP2007334317A (ja) * | 2006-05-16 | 2007-12-27 | Semiconductor Energy Lab Co Ltd | 液晶表示装置及び半導体装置 |
WO2009128424A1 (ja) * | 2008-04-16 | 2009-10-22 | 住友金属鉱山株式会社 | 薄膜トランジスタ型基板、薄膜トランジスタ型液晶表示装置および薄膜トランジスタ型基板の製造方法 |
JP2010067849A (ja) * | 2008-09-11 | 2010-03-25 | Fujifilm Corp | 薄膜電界効果型トランジスタおよびそれを用いた表示装置 |
JP2010123748A (ja) * | 2008-11-19 | 2010-06-03 | Toshiba Corp | 薄膜トランジスタ、その製造方法、表示装置及びその製造方法 |
WO2011024704A1 (ja) * | 2009-08-28 | 2011-03-03 | 株式会社アルバック | 配線層、半導体装置、液晶表示装置 |
JP2011138117A (ja) * | 2009-12-04 | 2011-07-14 | Semiconductor Energy Lab Co Ltd | 表示装置、及び当該表示装置を具備する電子機器 |
CN102135691A (zh) * | 2010-09-17 | 2011-07-27 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和液晶显示器 |
JP2012049210A (ja) * | 2010-08-25 | 2012-03-08 | Fujifilm Corp | 酸化物半導体薄膜およびその製造方法、並びに薄膜トランジスタ、薄膜トランジスタを備えた装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6933528B2 (en) * | 2002-04-04 | 2005-08-23 | Nec Lcd Technologies, Ltd. | In-plane switching mode active matrix type liquid crystal display device and method of fabricating the same |
TWI396314B (zh) * | 2009-07-27 | 2013-05-11 | Au Optronics Corp | 畫素結構、有機電激發光顯示單元及其製造方法 |
KR101746198B1 (ko) * | 2009-09-04 | 2017-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 전자기기 |
TWI412828B (zh) * | 2010-05-31 | 2013-10-21 | Au Optronics Corp | 顯示面板 |
CN102156369B (zh) | 2011-01-18 | 2013-09-04 | 京东方科技集团股份有限公司 | 薄膜晶体管液晶显示阵列基板及其制造方法 |
CN102157564B (zh) * | 2011-01-18 | 2013-05-01 | 上海交通大学 | 顶栅金属氧化物薄膜晶体管的制备方法 |
CN102156368A (zh) * | 2011-01-18 | 2011-08-17 | 京东方科技集团股份有限公司 | 薄膜晶体管液晶显示阵列基板及其制造方法 |
CN202126557U (zh) * | 2011-06-29 | 2012-01-25 | 京东方科技集团股份有限公司 | 一种阵列基板 |
CN102315167B (zh) * | 2011-09-07 | 2013-09-25 | 信利半导体有限公司 | 广视角液晶显示器阵列基板制作方法 |
CN102790012A (zh) | 2012-07-20 | 2012-11-21 | 京东方科技集团股份有限公司 | 阵列基板的制造方法及阵列基板、显示装置 |
-
2012
- 2012-07-20 CN CN2012102547358A patent/CN102790012A/zh active Pending
- 2012-12-13 US US13/984,090 patent/US9040344B2/en active Active
- 2012-12-13 EP EP12861051.6A patent/EP2876676B1/en active Active
- 2012-12-13 WO PCT/CN2012/086597 patent/WO2014012334A1/zh active Application Filing
- 2012-12-13 JP JP2015521941A patent/JP6129312B2/ja active Active
- 2012-12-13 KR KR1020137019943A patent/KR101522481B1/ko active IP Right Grant
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003050405A (ja) * | 2000-11-15 | 2003-02-21 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタアレイ、その製造方法およびそれを用いた表示パネル |
JP2004310036A (ja) * | 2002-12-09 | 2004-11-04 | Lg Philips Lcd Co Ltd | 液晶表示装置用アレイ基板の製造方法 |
JP2007334317A (ja) * | 2006-05-16 | 2007-12-27 | Semiconductor Energy Lab Co Ltd | 液晶表示装置及び半導体装置 |
WO2009128424A1 (ja) * | 2008-04-16 | 2009-10-22 | 住友金属鉱山株式会社 | 薄膜トランジスタ型基板、薄膜トランジスタ型液晶表示装置および薄膜トランジスタ型基板の製造方法 |
JP2010067849A (ja) * | 2008-09-11 | 2010-03-25 | Fujifilm Corp | 薄膜電界効果型トランジスタおよびそれを用いた表示装置 |
JP2010123748A (ja) * | 2008-11-19 | 2010-06-03 | Toshiba Corp | 薄膜トランジスタ、その製造方法、表示装置及びその製造方法 |
WO2011024704A1 (ja) * | 2009-08-28 | 2011-03-03 | 株式会社アルバック | 配線層、半導体装置、液晶表示装置 |
JP2011138117A (ja) * | 2009-12-04 | 2011-07-14 | Semiconductor Energy Lab Co Ltd | 表示装置、及び当該表示装置を具備する電子機器 |
JP2012049210A (ja) * | 2010-08-25 | 2012-03-08 | Fujifilm Corp | 酸化物半導体薄膜およびその製造方法、並びに薄膜トランジスタ、薄膜トランジスタを備えた装置 |
CN102135691A (zh) * | 2010-09-17 | 2011-07-27 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和液晶显示器 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020514808A (ja) * | 2017-03-17 | 2020-05-21 | 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. | アレイ基板およびその製造方法、表示パネルおよび表示装置 |
US11296123B2 (en) | 2017-03-17 | 2022-04-05 | Boe Technology Group Co., Ltd. | Array substrate and manufacturing method thereof, display panel and display device |
JP7180841B2 (ja) | 2017-03-17 | 2022-11-30 | 京東方科技集團股▲ふん▼有限公司 | アレイ基板およびその製造方法、表示パネルおよび表示装置 |
KR20200115677A (ko) * | 2018-03-09 | 2020-10-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 함유 재료들을 위한 고압 어닐링 프로세스 |
JP2021515412A (ja) * | 2018-03-09 | 2021-06-17 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 金属含有材料の高圧アニーリングプロセス |
JP7239598B2 (ja) | 2018-03-09 | 2023-03-14 | アプライド マテリアルズ インコーポレイテッド | 金属含有材料の高圧アニーリングプロセス |
KR102536820B1 (ko) * | 2018-03-09 | 2023-05-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 함유 재료들을 위한 고압 어닐링 프로세스 |
US11881411B2 (en) | 2018-03-09 | 2024-01-23 | Applied Materials, Inc. | High pressure annealing process for metal containing materials |
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EP2876676A4 (en) | 2016-11-30 |
JP6129312B2 (ja) | 2017-05-17 |
US20140167031A1 (en) | 2014-06-19 |
EP2876676A1 (en) | 2015-05-27 |
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KR101522481B1 (ko) | 2015-05-21 |
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