JP2015516678A - 多層酸窒化物層を有する酸化物−窒化物−酸化物積層体 - Google Patents
多層酸窒化物層を有する酸化物−窒化物−酸化物積層体 Download PDFInfo
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Abstract
Description
本出願は、35U.S.C119(e)に基づいて2007年5月25日に出願された米国仮特許出願第60/931,947号の優先権の利益を主張して2007年6月13日に出願された同時継続米国出願第11/811,958号の一部継続出願であり、その両出願とも引用することにより本明細書に援用されるものとする。
<実装及び代替手段>
Claims (20)
- 基板の表面を覆う半導体材料から形成され、メモリデバイスのソース及びドレインを接続す
るチャネルと、
前記チャネルを覆うトンネル酸化物層と、
前記トンネル酸化物層上の酸素リッチな第1の酸窒化物層、及び、前記第1の酸窒化物層上の酸素リーンな第2の酸窒化物層を含む多層電荷蓄積層と、
を備えるメモリデバイスであり、
前記第1の酸窒化物層の化学量論的組成は、前記第1の酸窒化物層のトラップを実質的に無くし、
前記第2の酸窒化物層の化学量論的組成は、前記第2の酸窒化物層のトラップ密度を高くする、メモリデバイス。 - 請求項1に記載のメモリデバイスであり、前記チャネルはポリシリコンを含む、メモリデバイス。
- 請求項1に記載のメモリデバイスであり、前記チャネルは再結晶ポリシリコンを含む、メモリデバイス。
- 請求項1に記載のメモリデバイスであり、前記チャネルはシリコンナノワイヤを含む、メモリデバイス。
- 請求項1に記載のメモリデバイスであり、前記メモリデバイスは前記チャネルに当接する複数の表面を有するゲートを含む非平面状トランジスタを備え、
前記ゲートはトンネル酸化物層と前記多層電荷蓄積層とを備える、メモリデバイス。 - 請求項5に記載のメモリデバイスであり、前記ゲートは、前記多層電荷蓄積層を覆う阻止誘電体と、前記阻止誘電体の層を覆う金属ゲート層とを更に備える、メモリデバイス。
- 請求項6に記載のメモリデバイスであり、前記阻止誘電体は高誘電率誘電体を備える、メモリデバイス。
- 請求項1に記載のメモリデバイスであり、前記第2の酸窒化物層は、前記第2の酸窒化物層内のトラップ数を増加させるように選択された濃度の炭素を更に含む、メモリデバイス。
- 基板の表面を覆う半導体材料から形成され、メモリデバイスのソースとドレインとを接続する導電チャネルと、
前記チャネルに当接する複数の表面を有するゲートと、を備えるメモリデバイスであり、
前記ゲートは、
前記チャネルを覆うトンネル酸化物層と、
前記トンネル酸化物層により近い第1の酸窒化物層、及び第2の酸窒化物層を含む多層電荷蓄積層とを備え、
前記第1の酸窒化物層は、酸化物を含む反トンネル層によって前記第2の酸窒化物層から分離される、メモリデバイス。 - 請求項9に記載のメモリデバイスであり、前記チャネルはシリコンナノワイヤを含む、メモリデバイス。
- 請求項9に記載のメモリデバイスであり、前記デバイスはfinFETを備え、
前記ゲートは、前記多層電荷蓄積層を覆う阻止誘電体と、前記阻止誘電体の層を覆う金属ゲート層とを更に備える、メモリデバイス。 - 請求項11に記載のメモリデバイスであり、前記阻止誘電体は高誘電率誘電体を備える、メモリデバイス。
- 請求項9に記載のメモリデバイスであり、前記反トンネル層は、ラジカル酸化により酸化された前記第1の酸窒化物層の一部を備える、メモリデバイス。
- 請求項9に記載のメモリデバイスであり、前記第1の酸窒化物層は実質的にトラップが無く、酸素リッチな酸窒化物層であり、
前記第2の酸窒化物層は実質的にトラップ密度が高く、酸素リーンな酸窒化物層であり、前記第2の酸窒化物層内のトラップ数を増加させるように選択された濃度の炭素を更に含む、メモリデバイス。 - 半導体材料の薄い突起から形成され、基板表面に形成される第1の拡散領域から前記基板表面の上に形成される第2の拡散領域へ延びる垂直チャネルと、
前記垂直チャネルに当接するトンネル酸化物層と、
前記トンネル酸化物層に当接する多層電荷蓄積層とを備えるメモリデバイスであり、
前記垂直チャネルは、前記第1の拡散領域を第2の拡散領域へ電気的に接続し、
前記多層電荷蓄積層は、前記トンネル酸化物層により近い酸素リッチな窒化物を含む第1の酸窒化物層と、シリコンリッチ、酸素リーンな窒化物を含み、前記第1の酸窒化物層を覆う第2の酸窒化物層とを備え、
第2の電荷トラップ層は、分離した電荷トラップ領域に区分される大部分の電荷トラップを備える、メモリデバイス。 - 請求項15に記載のメモリデバイスであり、前記チャネルは垂直シリコンナノワイヤを含む、メモリデバイス。
- 請求項16に記載のメモリデバイスであり、前記多層電荷蓄積層は、前記第1の酸窒化物層を前記第2の酸窒化物層から分離する酸化物反トンネル層を更に備える、メモリデバイス。
- 請求項16に記載のメモリデバイスであり、前記多層電荷蓄積層を覆う高誘電率阻止誘電体を更に備える、メモリデバイス。
- 請求項18に記載のメモリデバイスであり、前記多層電荷蓄積層は前記第1の酸窒化物層を前記第2の酸窒化物層から分離する酸化物反トンネル層を更に備える、メモリデバイス。
- 請求項15に記載の構造であり、前記第2の酸窒化物層は前記第2の酸窒化物層内のトラップ数を増加させるように選択された濃度の炭素を更に含む、構造。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6306233B1 (ja) * | 2017-02-28 | 2018-04-04 | ウィンボンド エレクトロニクス コーポレーション | フラッシュメモリおよびその製造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9449831B2 (en) | 2007-05-25 | 2016-09-20 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
US8633537B2 (en) | 2007-05-25 | 2014-01-21 | Cypress Semiconductor Corporation | Memory transistor with multiple charge storing layers and a high work function gate electrode |
US8940645B2 (en) | 2007-05-25 | 2015-01-27 | Cypress Semiconductor Corporation | Radical oxidation process for fabricating a nonvolatile charge trap memory device |
US20090179253A1 (en) | 2007-05-25 | 2009-07-16 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
EP3534408A1 (en) * | 2012-03-27 | 2019-09-04 | Cypress Semiconductor Corporation | Sonos stack with split nitride memory layer |
CN111180525B (zh) * | 2012-03-31 | 2023-08-08 | 经度快闪存储解决方案有限责任公司 | 具有多个氮氧化物层的氧化物氮化物氧化物堆栈 |
SG11201912263VA (en) * | 2017-08-01 | 2020-01-30 | Illumina Inc | Field effect sensors |
US20240030331A1 (en) * | 2021-08-06 | 2024-01-25 | Innoscience (Suzhou) Technology Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN114038918A (zh) * | 2021-11-08 | 2022-02-11 | 珠海创飞芯科技有限公司 | 一种存储单元、存储单元的制作方法以及存储器 |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002217317A (ja) * | 2001-01-16 | 2002-08-02 | Sony Corp | 不揮発性半導体記憶装置およびその製造方法 |
JP2004172616A (ja) * | 2002-11-15 | 2004-06-17 | Samsung Electronics Co Ltd | 垂直ナノチューブを利用した不揮発性メモリ素子 |
JP2008172195A (ja) * | 2006-10-11 | 2008-07-24 | Macronix Internatl Co Ltd | 縦型チャネルメモリーとその製造方法および稼働方法 |
US20080293255A1 (en) * | 2007-05-25 | 2008-11-27 | Krishnaswamy Ramkumar | Radical oxidation process for fabricating a nonvolatile charge trap memory device |
JP2009027134A (ja) * | 2007-06-21 | 2009-02-05 | Tokyo Electron Ltd | Mos型半導体メモリ装置 |
JP2009535800A (ja) * | 2006-04-26 | 2009-10-01 | エヌエックスピー ビー ヴィ | 不揮発性メモリデバイス |
JP2009252774A (ja) * | 2008-04-01 | 2009-10-29 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
JP2009295694A (ja) * | 2008-06-03 | 2009-12-17 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
JP2010016228A (ja) * | 2008-07-04 | 2010-01-21 | Toshiba Corp | 不揮発性半導体記憶装置及びその形成方法 |
WO2010106922A1 (ja) * | 2009-03-19 | 2010-09-23 | 株式会社 東芝 | 半導体装置及びその製造方法 |
JP2011507231A (ja) * | 2007-12-07 | 2011-03-03 | エージェンシー フォー サイエンス,テクノロジー アンド リサーチ | シリコン−ゲルマニウムナノワイヤ構造およびその形成方法 |
US20110248332A1 (en) * | 2007-05-25 | 2011-10-13 | Sagy Levy | Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers |
JP2011527824A (ja) * | 2008-07-09 | 2011-11-04 | クナノ アーベー | ナノ構造メモリデバイス |
US8067284B1 (en) * | 2007-05-25 | 2011-11-29 | Cypress Semiconductor Corporation | Oxynitride bilayer formed using a precursor inducing a high charge trap density in a top layer of the bilayer |
JP2012019211A (ja) * | 2010-07-06 | 2012-01-26 | Macronix International Co Ltd | ストリング選択線及びビット線の改善されたコンタクトレイアウトを有する3次元メモリアレイ |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5348903A (en) * | 1992-09-03 | 1994-09-20 | Motorola Inc. | Process for fabricating a semiconductor memory cell having thin-film driver transistors overlapping dual wordlines |
JPH07153769A (ja) * | 1993-11-30 | 1995-06-16 | Hitachi Ltd | 半導体集積回路装置の製造方法および製造装置 |
EP0801427A3 (en) * | 1996-04-11 | 1999-05-06 | Matsushita Electric Industrial Co., Ltd. | Field effect transistor, semiconductor storage device, method of manufacturing the same and method of driving semiconductor storage device |
US6709928B1 (en) * | 2001-07-31 | 2004-03-23 | Cypress Semiconductor Corporation | Semiconductor device having silicon-rich layer and method of manufacturing such a device |
KR100395762B1 (ko) * | 2001-07-31 | 2003-08-21 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조방법 |
US7067867B2 (en) * | 2002-09-30 | 2006-06-27 | Nanosys, Inc. | Large-area nonenabled macroelectronic substrates and uses therefor |
JP4489359B2 (ja) * | 2003-01-31 | 2010-06-23 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
US7452778B2 (en) * | 2004-06-10 | 2008-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor nano-wire devices and methods of fabrication |
US7612403B2 (en) * | 2005-05-17 | 2009-11-03 | Micron Technology, Inc. | Low power non-volatile memory and gate stack |
JP2008034456A (ja) * | 2006-07-26 | 2008-02-14 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP4282699B2 (ja) * | 2006-09-01 | 2009-06-24 | 株式会社東芝 | 半導体装置 |
KR100890040B1 (ko) * | 2006-10-23 | 2009-03-25 | 주식회사 하이닉스반도체 | 전하트랩층을 갖는 불휘발성 메모리소자 및 그 제조방법 |
US8063434B1 (en) * | 2007-05-25 | 2011-11-22 | Cypress Semiconductor Corporation | Memory transistor with multiple charge storing layers and a high work function gate electrode |
US20090179253A1 (en) * | 2007-05-25 | 2009-07-16 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
JP2009272348A (ja) * | 2008-04-30 | 2009-11-19 | Toshiba Corp | 半導体装置およびその製造方法 |
JP5356005B2 (ja) * | 2008-12-10 | 2013-12-04 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
US8222688B1 (en) * | 2009-04-24 | 2012-07-17 | Cypress Semiconductor Corporation | SONOS stack with split nitride memory layer |
JP2011035228A (ja) * | 2009-08-04 | 2011-02-17 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
US8169835B2 (en) * | 2009-09-28 | 2012-05-01 | Macronix International Co., Ltd. | Charge trapping memory cell having bandgap engineered tunneling structure with oxynitride isolation layer |
JP2011199194A (ja) * | 2010-03-23 | 2011-10-06 | Toshiba Corp | 半導体装置の製造方法 |
JP5514004B2 (ja) * | 2010-06-15 | 2014-06-04 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
WO2011162725A1 (en) * | 2010-06-25 | 2011-12-29 | Agency For Science, Technology And Research | Nanowire transistor and method for manufacturing a nanowire transistor |
KR101738103B1 (ko) * | 2010-09-10 | 2017-05-22 | 삼성전자주식회사 | 3차원 반도체 기억 소자 |
TWI534897B (zh) * | 2011-01-14 | 2016-05-21 | 賽普拉斯半導體公司 | 具有多重氮氧化物層之氧化物-氮化物-氧化物堆疊 |
KR20110093746A (ko) * | 2011-07-01 | 2011-08-18 | 고려대학교 산학협력단 | 멀티 펑션 4 비트/1 셀 비휘발성 퓨전 메모리 소자 및 그의 제조 방법 |
EP3534408A1 (en) * | 2012-03-27 | 2019-09-04 | Cypress Semiconductor Corporation | Sonos stack with split nitride memory layer |
CN111180525B (zh) * | 2012-03-31 | 2023-08-08 | 经度快闪存储解决方案有限责任公司 | 具有多个氮氧化物层的氧化物氮化物氧化物堆栈 |
-
2013
- 2013-03-15 CN CN202010010002.4A patent/CN111180525B/zh active Active
- 2013-03-15 KR KR1020147025059A patent/KR102085388B1/ko active IP Right Grant
- 2013-03-15 WO PCT/US2013/032339 patent/WO2013148343A1/en active Application Filing
- 2013-03-15 CN CN201380016893.2A patent/CN104321878A/zh active Pending
- 2013-03-15 EP EP18213095.5A patent/EP3537483A3/en not_active Withdrawn
- 2013-03-15 EP EP13767422.2A patent/EP2831917A4/en not_active Ceased
- 2013-03-15 JP JP2015503338A patent/JP6709051B2/ja active Active
- 2013-03-15 KR KR1020207005846A patent/KR102220842B1/ko active IP Right Grant
- 2013-03-15 EP EP20167516.2A patent/EP3709370A1/en active Pending
- 2013-03-22 TW TW106107213A patent/TWI615948B/zh active
- 2013-03-22 TW TW102110223A patent/TWI584450B/zh active
-
2020
- 2020-01-06 JP JP2020000333A patent/JP7042852B2/ja active Active
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002217317A (ja) * | 2001-01-16 | 2002-08-02 | Sony Corp | 不揮発性半導体記憶装置およびその製造方法 |
JP2004172616A (ja) * | 2002-11-15 | 2004-06-17 | Samsung Electronics Co Ltd | 垂直ナノチューブを利用した不揮発性メモリ素子 |
JP2009535800A (ja) * | 2006-04-26 | 2009-10-01 | エヌエックスピー ビー ヴィ | 不揮発性メモリデバイス |
JP2008172195A (ja) * | 2006-10-11 | 2008-07-24 | Macronix Internatl Co Ltd | 縦型チャネルメモリーとその製造方法および稼働方法 |
US20080293255A1 (en) * | 2007-05-25 | 2008-11-27 | Krishnaswamy Ramkumar | Radical oxidation process for fabricating a nonvolatile charge trap memory device |
US8067284B1 (en) * | 2007-05-25 | 2011-11-29 | Cypress Semiconductor Corporation | Oxynitride bilayer formed using a precursor inducing a high charge trap density in a top layer of the bilayer |
US20110248332A1 (en) * | 2007-05-25 | 2011-10-13 | Sagy Levy | Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers |
JP2009027134A (ja) * | 2007-06-21 | 2009-02-05 | Tokyo Electron Ltd | Mos型半導体メモリ装置 |
JP2011507231A (ja) * | 2007-12-07 | 2011-03-03 | エージェンシー フォー サイエンス,テクノロジー アンド リサーチ | シリコン−ゲルマニウムナノワイヤ構造およびその形成方法 |
JP2009252774A (ja) * | 2008-04-01 | 2009-10-29 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
JP2009295694A (ja) * | 2008-06-03 | 2009-12-17 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
JP2010016228A (ja) * | 2008-07-04 | 2010-01-21 | Toshiba Corp | 不揮発性半導体記憶装置及びその形成方法 |
JP2011527824A (ja) * | 2008-07-09 | 2011-11-04 | クナノ アーベー | ナノ構造メモリデバイス |
WO2010106922A1 (ja) * | 2009-03-19 | 2010-09-23 | 株式会社 東芝 | 半導体装置及びその製造方法 |
JP2012019211A (ja) * | 2010-07-06 | 2012-01-26 | Macronix International Co Ltd | ストリング選択線及びビット線の改善されたコンタクトレイアウトを有する3次元メモリアレイ |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6306233B1 (ja) * | 2017-02-28 | 2018-04-04 | ウィンボンド エレクトロニクス コーポレーション | フラッシュメモリおよびその製造方法 |
JP2018142659A (ja) * | 2017-02-28 | 2018-09-13 | ウィンボンド エレクトロニクス コーポレーション | フラッシュメモリおよびその製造方法 |
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