JP6709051B2 - 多層酸窒化物層を有する酸化物−窒化物−酸化物積層体 - Google Patents
多層酸窒化物層を有する酸化物−窒化物−酸化物積層体 Download PDFInfo
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Description
本出願は、35U.S.C119(e)に基づいて2007年5月25日に出願された米国仮特許出願第60/931,947号の優先権の利益を主張して2007年6月13日に出願された同時継続米国出願第11/811,958号の一部継続出願であり、その両出願とも引用することにより本明細書に援用されるものとする。
<実装及び代替手段>
Claims (19)
- 基板の表面上に配置される半導体材料から形成され、メモリデバイスのソース及びドレインを接続するチャネルと、
前記チャネルを覆うトンネル酸化物層と、
前記トンネル酸化物層上の酸素リッチであり酸化物を含む反トンネル層によって前記第2の酸窒化物層から分離される第1の酸窒化物層、及び、前記第1の酸窒化物層上の酸素リーンな第2の酸窒化物層を含む多層電荷蓄積層と、
を備えるメモリデバイスであり、
前記第1の酸窒化物層の化学量論的組成は、前記第1の酸窒化物層のトラップを実質的に無くし、
前記第2の酸窒化物層の化学量論的組成は、前記第2の酸窒化物層のトラップ密度を高くし、
前記メモリデバイスは前記チャネルに当接し前記チャネルの全面を取り囲む複数の表面を有するゲートを含む非平面状トランジスタを備え、
前記ゲートはトンネル酸化物層と前記多層電荷蓄積層とを備え、
前記第2の酸窒化物層はHfSiON、HfSiO、HfO、ZrSiON、ZrSiO、ZrO及びY2O3から選択される高誘電率誘電体を含む、メモリデバイス。 - 請求項1に記載のメモリデバイスであり、前記チャネルはポリシリコンを含む、メモリデバイス。
- 請求項1に記載のメモリデバイスであり、前記チャネルは再結晶ポリシリコンを含む、メモリデバイス。
- 請求項1に記載のメモリデバイスであり、前記チャネルはシリコンナノワイヤを含む、メモリデバイス。
- 請求項1に記載のメモリデバイスであり、前記ゲートは、前記多層電荷蓄積層を覆う阻止誘電体と、前記阻止誘電体の層を覆う金属ゲート層とを更に備える、メモリデバイス。
- 請求項5に記載のメモリデバイスであり、前記阻止誘電体は高誘電率誘電体を備える、メモリデバイス。
- 請求項1に記載のメモリデバイスであり、前記第2の酸窒化物層は、前記第2の酸窒化物層内のトラップ数を増加させるように選択された濃度の炭素を更に含む、メモリデバイス。
- 基板の表面上に配置される半導体材料から形成され、メモリデバイスのソースとドレインとを接続する導電チャネルと、
前記チャネルに当接する複数の表面を有するゲートと、を備えるメモリデバイスであり、
前記ゲートは、
前記チャネルを覆うトンネル酸化物層と、
前記トンネル酸化物層により近く酸素リッチな第1の酸窒化物層、及び酸素リーンな第2の酸窒化物層を含む多層電荷蓄積層とを備え、
前記第1の酸窒化物層は、酸化物を含む反トンネル層によって前記第2の酸窒化物層から分離され、
前記メモリデバイスは前記チャネルに当接し前記チャネルの全面を取り囲む複数の表面を有する前記ゲートを含む非平面状トランジスタを備え、
前記第2の酸窒化物層はHfSiON、HfSiO、HfO、ZrSiON、ZrSiO、ZrO及びY2O3から選択される高誘電率誘電体を含む、メモリデバイス。 - 請求項8に記載のメモリデバイスであり、前記チャネルはシリコンナノワイヤを含む、メモリデバイス。
- 請求項8に記載のメモリデバイスであり、前記ゲートは、前記多層電荷蓄積層を覆う阻止誘電体と、前記阻止誘電体の層を覆う金属ゲート層とを更に備える、メモリデバイス。
- 請求項10に記載のメモリデバイスであり、前記阻止誘電体は高誘電率誘電体を備える、メモリデバイス。
- 請求項8に記載のメモリデバイスであり、前記反トンネル層は、ラジカル酸化により酸化された前記第1の酸窒化物層の一部を備える、メモリデバイス。
- 請求項8に記載のメモリデバイスであり、前記第1の酸窒化物層は実質的にトラップが無く、酸素リッチな酸窒化物層であり、
前記第2の酸窒化物層はトラップ密度が高く、酸素リーンな酸窒化物層であり、前記第2の酸窒化物層内のトラップ数を増加させるように選択された濃度の炭素を更に含む、メモリデバイス。 - 半導体材料の薄い突起から形成され、基板表面に形成される第1の拡散領域から前記基板表面の上方に形成される第2の拡散領域へ延びるとともに中空円筒である垂直チャネルと、
前記垂直チャネルに当接するトンネル酸化物層と、
前記トンネル酸化物層に当接する多層電荷蓄積層とを備えるメモリデバイスであり、
前記垂直チャネルは、前記第1の拡散領域を第2の拡散領域へ電気的に接続し、
前記多層電荷蓄積層は、前記トンネル酸化物層により近い酸素リッチな窒化物を含む第1の酸窒化物層と、シリコンリッチ、酸素リーンな窒化物を含み、前記第1の酸窒化物層を覆う第2の酸窒化物層とを備え、
前記第2の酸窒化物層は、分離した電荷トラップ領域に区分される大部分の電荷トラップを備え、
前記メモリデバイスは前記垂直チャネルに当接し前記垂直チャネルの全面を取り囲む複数の表面を有するゲートを含む非平面状トランジスタを備え、
前記ゲートはトンネル酸化物層と前記多層電荷蓄積層とを備え、
前記第2の酸窒化物層はHfSiON、HfSiO、HfO、ZrSiON、ZrSiO、ZrO及びY2O3から選択される高誘電率誘電体を含む、メモリデバイス。 - 請求項14に記載のメモリデバイスであり、前記チャネルは垂直シリコンナノワイヤを含む、メモリデバイス。
- 請求項15に記載のメモリデバイスであり、前記多層電荷蓄積層は、前記第1の酸窒化物層を前記第2の酸窒化物層から分離する酸化物反トンネル層を更に備える、メモリデバイス。
- 請求項15に記載のメモリデバイスであり、前記多層電荷蓄積層を覆う高誘電率阻止誘電体を更に備える、メモリデバイス。
- 請求項17に記載のメモリデバイスであり、前記多層電荷蓄積層は前記第1の酸窒化物層を前記第2の酸窒化物層から分離する酸化物反トンネル層を更に備える、メモリデバイス。
- 請求項14に記載のメモリデバイスであり、前記第2の酸窒化物層は前記第2の酸窒化物層内のトラップ数を増加させるように選択された濃度の炭素を更に含む、メモリデバイス。
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