JP2015506641A5 - - Google Patents

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Publication number
JP2015506641A5
JP2015506641A5 JP2014553838A JP2014553838A JP2015506641A5 JP 2015506641 A5 JP2015506641 A5 JP 2015506641A5 JP 2014553838 A JP2014553838 A JP 2014553838A JP 2014553838 A JP2014553838 A JP 2014553838A JP 2015506641 A5 JP2015506641 A5 JP 2015506641A5
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JP
Japan
Prior art keywords
layer
electrode layer
transducer
dielectric film
patterning
Prior art date
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Application number
JP2014553838A
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English (en)
Japanese (ja)
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JP6190387B2 (ja
JP2015506641A (ja
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Priority claimed from PCT/IB2013/050572 external-priority patent/WO2013111063A1/en
Publication of JP2015506641A publication Critical patent/JP2015506641A/ja
Publication of JP2015506641A5 publication Critical patent/JP2015506641A5/ja
Application granted granted Critical
Publication of JP6190387B2 publication Critical patent/JP6190387B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014553838A 2012-01-27 2013-01-23 容量型微細加工トランスデューサ及びその製造方法 Active JP6190387B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261591308P 2012-01-27 2012-01-27
US61/591,308 2012-01-27
PCT/IB2013/050572 WO2013111063A1 (en) 2012-01-27 2013-01-23 Capacitive micro-machined transducer and method of manufacturing the same

Publications (3)

Publication Number Publication Date
JP2015506641A JP2015506641A (ja) 2015-03-02
JP2015506641A5 true JP2015506641A5 (enExample) 2016-03-10
JP6190387B2 JP6190387B2 (ja) 2017-08-30

Family

ID=47884432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014553838A Active JP6190387B2 (ja) 2012-01-27 2013-01-23 容量型微細加工トランスデューサ及びその製造方法

Country Status (8)

Country Link
US (1) US9828236B2 (enExample)
EP (1) EP2806983B1 (enExample)
JP (1) JP6190387B2 (enExample)
CN (1) CN104066520A (enExample)
BR (1) BR112014018080A8 (enExample)
MX (1) MX2014008852A (enExample)
RU (1) RU2627062C2 (enExample)
WO (1) WO2013111063A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5578810B2 (ja) * 2009-06-19 2014-08-27 キヤノン株式会社 静電容量型の電気機械変換装置
CN105592940B (zh) * 2013-09-24 2018-09-25 皇家飞利浦有限公司 Cmut装置制造方法、cmut装置和设备
JP6882890B2 (ja) * 2013-11-18 2021-06-02 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. 超音波トランスデューサアセンブリ
KR20160006494A (ko) * 2014-07-09 2016-01-19 삼성전자주식회사 와이어 본딩을 이용한 정전용량 미세가공 초음파 변환기 프로브
US11766237B2 (en) 2015-07-02 2023-09-26 Philips Image Guided Therapy Corporation Multi-mode capacitive micromachined ultrasound transducer and associated devices, systems, and methods for multiple different intravascular sensing capabilities
JP6998379B2 (ja) 2016-12-22 2022-01-18 コーニンクレッカ フィリップス エヌ ヴェ 容量性高周波微小電気機械スイッチのシステム及び動作方法
TW202000137A (zh) * 2018-05-03 2020-01-01 美商蝴蝶網路公司 互補式金屬氧化物半導體感測器上超音波換能器的壓力口
US12253391B2 (en) 2018-05-24 2025-03-18 The Research Foundation For The State University Of New York Multielectrode capacitive sensor without pull-in risk
CN109665488B (zh) * 2018-12-29 2024-07-19 杭州士兰集成电路有限公司 Mems器件及其制造方法
TW202045099A (zh) 2019-02-07 2020-12-16 美商蝴蝶網路公司 用於微加工超音波傳感器裝置的雙層金屬電極
US11684951B2 (en) 2019-08-08 2023-06-27 Bfly Operations, Inc. Micromachined ultrasonic transducer devices having truncated circle shaped cavities
US12611697B2 (en) 2023-09-01 2026-04-28 GE Precision Healthcare LLC Higher bandwidth micromachined transducers mixed with biasing scheme

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1713399A4 (en) * 2004-02-06 2010-08-11 Georgia Tech Res Inst CMUT DEVICES AND MANUFACTURING METHOD
US7172947B2 (en) * 2004-08-31 2007-02-06 Micron Technology, Inc High dielectric constant transition metal oxide materials
CN101589543B (zh) * 2005-05-18 2012-10-31 科隆科技公司 微机电换能器
KR100648860B1 (ko) * 2005-09-08 2006-11-24 주식회사 하이닉스반도체 유전막 및 그 형성방법과, 상기 유전막을 구비한 반도체메모리 소자 및 그 제조방법
JP4724505B2 (ja) * 2005-09-09 2011-07-13 株式会社日立製作所 超音波探触子およびその製造方法
JP4961260B2 (ja) * 2007-05-16 2012-06-27 株式会社日立製作所 半導体装置
US20080315331A1 (en) * 2007-06-25 2008-12-25 Robert Gideon Wodnicki Ultrasound system with through via interconnect structure
JP5260650B2 (ja) * 2007-07-31 2013-08-14 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 高k誘電体を有するcmut
US8475374B2 (en) * 2007-08-23 2013-07-02 Purdue Research Foundation Intra-occular pressure sensor
WO2009122314A1 (en) * 2008-03-31 2009-10-08 Nxp B.V. A sensor chip and a method of manufacturing the same
JP5305993B2 (ja) * 2008-05-02 2013-10-02 キヤノン株式会社 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子
RU2511671C2 (ru) 2008-09-16 2014-04-10 Конинклейке Филипс Электроникс Н.В. Емкостной микрообработанный ультразвуковой преобразователь
FR2939003B1 (fr) * 2008-11-21 2011-02-25 Commissariat Energie Atomique Cellule cmut formee d'une membrane de nano-tubes ou de nano-fils ou de nano-poutres et dispositif d'imagerie acoustique ultra haute frequence comprenant une pluralite de telles cellules
KR101689346B1 (ko) * 2009-02-27 2016-12-23 코닌클리케 필립스 엔.브이. 기계적 붕괴 보유를 갖는 사전 붕괴된 cmut
JP2011054708A (ja) 2009-09-01 2011-03-17 Elpida Memory Inc 絶縁膜およびその製造方法、半導体装置、ならびにデータ処理システム
WO2011111427A1 (ja) * 2010-03-12 2011-09-15 株式会社 日立メディコ 超音波トランスデューサおよびそれを用いた超音波診断装置
US8530322B2 (en) * 2010-12-16 2013-09-10 Intermolecular, Inc. Method of forming stacked metal oxide layers
US20120228773A1 (en) * 2011-03-08 2012-09-13 International Business Machines Corporation Large-grain, low-resistivity tungsten on a conductive compound
US8794075B2 (en) * 2011-08-11 2014-08-05 Nxp, B.V. Multilayered NONON membrane in a MEMS sensor

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