MX2014008852A - Transductor capacitivo micromaquinado y metodo de manufactura del mismo. - Google Patents

Transductor capacitivo micromaquinado y metodo de manufactura del mismo.

Info

Publication number
MX2014008852A
MX2014008852A MX2014008852A MX2014008852A MX2014008852A MX 2014008852 A MX2014008852 A MX 2014008852A MX 2014008852 A MX2014008852 A MX 2014008852A MX 2014008852 A MX2014008852 A MX 2014008852A MX 2014008852 A MX2014008852 A MX 2014008852A
Authority
MX
Mexico
Prior art keywords
dielectric film
manufacturing
layer
same
deposit
Prior art date
Application number
MX2014008852A
Other languages
English (en)
Spanish (es)
Inventor
Peter Dirksen
Bout Marcelis
Ruediger Mauczok
Koray Karakaya
Johan Hendrik Klootwijk
Marcel Mulder
Original Assignee
Koninkl Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Nv filed Critical Koninkl Philips Nv
Publication of MX2014008852A publication Critical patent/MX2014008852A/es

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0027—Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Acoustics & Sound (AREA)
  • Physics & Mathematics (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Measuring Fluid Pressure (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Drying Of Semiconductors (AREA)
  • Pressure Sensors (AREA)
MX2014008852A 2012-01-27 2013-01-23 Transductor capacitivo micromaquinado y metodo de manufactura del mismo. MX2014008852A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261591308P 2012-01-27 2012-01-27
PCT/IB2013/050572 WO2013111063A1 (en) 2012-01-27 2013-01-23 Capacitive micro-machined transducer and method of manufacturing the same

Publications (1)

Publication Number Publication Date
MX2014008852A true MX2014008852A (es) 2014-10-06

Family

ID=47884432

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2014008852A MX2014008852A (es) 2012-01-27 2013-01-23 Transductor capacitivo micromaquinado y metodo de manufactura del mismo.

Country Status (8)

Country Link
US (1) US9828236B2 (enExample)
EP (1) EP2806983B1 (enExample)
JP (1) JP6190387B2 (enExample)
CN (1) CN104066520A (enExample)
BR (1) BR112014018080A8 (enExample)
MX (1) MX2014008852A (enExample)
RU (1) RU2627062C2 (enExample)
WO (1) WO2013111063A1 (enExample)

Families Citing this family (12)

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JP5578810B2 (ja) * 2009-06-19 2014-08-27 キヤノン株式会社 静電容量型の電気機械変換装置
CN105592940B (zh) * 2013-09-24 2018-09-25 皇家飞利浦有限公司 Cmut装置制造方法、cmut装置和设备
JP6882890B2 (ja) * 2013-11-18 2021-06-02 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 超音波トランスデューサアセンブリ
KR20160006494A (ko) * 2014-07-09 2016-01-19 삼성전자주식회사 와이어 본딩을 이용한 정전용량 미세가공 초음파 변환기 프로브
US11766237B2 (en) 2015-07-02 2023-09-26 Philips Image Guided Therapy Corporation Multi-mode capacitive micromachined ultrasound transducer and associated devices, systems, and methods for multiple different intravascular sensing capabilities
JP6998379B2 (ja) 2016-12-22 2022-01-18 コーニンクレッカ フィリップス エヌ ヴェ 容量性高周波微小電気機械スイッチのシステム及び動作方法
TW202000137A (zh) * 2018-05-03 2020-01-01 美商蝴蝶網路公司 互補式金屬氧化物半導體感測器上超音波換能器的壓力口
US12253391B2 (en) 2018-05-24 2025-03-18 The Research Foundation For The State University Of New York Multielectrode capacitive sensor without pull-in risk
CN109665488B (zh) * 2018-12-29 2024-07-19 杭州士兰集成电路有限公司 Mems器件及其制造方法
TW202045099A (zh) 2019-02-07 2020-12-16 美商蝴蝶網路公司 用於微加工超音波傳感器裝置的雙層金屬電極
US11684951B2 (en) 2019-08-08 2023-06-27 Bfly Operations, Inc. Micromachined ultrasonic transducer devices having truncated circle shaped cavities
US12611697B2 (en) 2023-09-01 2026-04-28 GE Precision Healthcare LLC Higher bandwidth micromachined transducers mixed with biasing scheme

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EP1713399A4 (en) * 2004-02-06 2010-08-11 Georgia Tech Res Inst CMUT DEVICES AND MANUFACTURING METHOD
US7172947B2 (en) * 2004-08-31 2007-02-06 Micron Technology, Inc High dielectric constant transition metal oxide materials
CN101589543B (zh) * 2005-05-18 2012-10-31 科隆科技公司 微机电换能器
KR100648860B1 (ko) * 2005-09-08 2006-11-24 주식회사 하이닉스반도체 유전막 및 그 형성방법과, 상기 유전막을 구비한 반도체메모리 소자 및 그 제조방법
JP4724505B2 (ja) * 2005-09-09 2011-07-13 株式会社日立製作所 超音波探触子およびその製造方法
JP4961260B2 (ja) * 2007-05-16 2012-06-27 株式会社日立製作所 半導体装置
US20080315331A1 (en) * 2007-06-25 2008-12-25 Robert Gideon Wodnicki Ultrasound system with through via interconnect structure
JP5260650B2 (ja) * 2007-07-31 2013-08-14 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 高ｋ誘電体を有するｃｍｕｔ
US8475374B2 (en) * 2007-08-23 2013-07-02 Purdue Research Foundation Intra-occular pressure sensor
WO2009122314A1 (en) * 2008-03-31 2009-10-08 Nxp B.V. A sensor chip and a method of manufacturing the same
JP5305993B2 (ja) * 2008-05-02 2013-10-02 キヤノン株式会社 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子
RU2511671C2 (ru) 2008-09-16 2014-04-10 Конинклейке Филипс Электроникс Н.В. Емкостной микрообработанный ультразвуковой преобразователь
FR2939003B1 (fr) * 2008-11-21 2011-02-25 Commissariat Energie Atomique Cellule cmut formee d'une membrane de nano-tubes ou de nano-fils ou de nano-poutres et dispositif d'imagerie acoustique ultra haute frequence comprenant une pluralite de telles cellules
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JP2011054708A (ja) 2009-09-01 2011-03-17 Elpida Memory Inc 絶縁膜およびその製造方法、半導体装置、ならびにデータ処理システム
WO2011111427A1 (ja) * 2010-03-12 2011-09-15 株式会社 日立メディコ 超音波トランスデューサおよびそれを用いた超音波診断装置
US8530322B2 (en) * 2010-12-16 2013-09-10 Intermolecular, Inc. Method of forming stacked metal oxide layers
US20120228773A1 (en) * 2011-03-08 2012-09-13 International Business Machines Corporation Large-grain, low-resistivity tungsten on a conductive compound
US8794075B2 (en) * 2011-08-11 2014-08-05 Nxp, B.V. Multilayered NONON membrane in a MEMS sensor

Also Published As

Publication number Publication date
WO2013111063A1 (en) 2013-08-01
US9828236B2 (en) 2017-11-28
BR112014018080A2 (enExample) 2017-06-20
CN104066520A (zh) 2014-09-24
BR112014018080A8 (pt) 2017-07-11
JP6190387B2 (ja) 2017-08-30
JP2015506641A (ja) 2015-03-02
EP2806983B1 (en) 2020-04-01
RU2014134901A (ru) 2016-03-27
EP2806983A1 (en) 2014-12-03
RU2627062C2 (ru) 2017-08-03
US20140332911A1 (en) 2014-11-13

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