MX2014008852A - Transductor capacitivo micromaquinado y metodo de manufactura del mismo. - Google Patents
Transductor capacitivo micromaquinado y metodo de manufactura del mismo.Info
- Publication number
- MX2014008852A MX2014008852A MX2014008852A MX2014008852A MX2014008852A MX 2014008852 A MX2014008852 A MX 2014008852A MX 2014008852 A MX2014008852 A MX 2014008852A MX 2014008852 A MX2014008852 A MX 2014008852A MX 2014008852 A MX2014008852 A MX 2014008852A
- Authority
- MX
- Mexico
- Prior art keywords
- depositing
- manufacturing
- capacitive micro
- dielectric film
- transducer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000151 deposition Methods 0.000 abstract 6
- 238000000034 method Methods 0.000 abstract 2
- 238000000231 atomic layer deposition Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0027—Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Measuring Fluid Pressure (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Drying Of Semiconductors (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261591308P | 2012-01-27 | 2012-01-27 | |
| PCT/IB2013/050572 WO2013111063A1 (en) | 2012-01-27 | 2013-01-23 | Capacitive micro-machined transducer and method of manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX2014008852A true MX2014008852A (es) | 2014-10-06 |
Family
ID=47884432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2014008852A MX2014008852A (es) | 2012-01-27 | 2013-01-23 | Transductor capacitivo micromaquinado y metodo de manufactura del mismo. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9828236B2 (enExample) |
| EP (1) | EP2806983B1 (enExample) |
| JP (1) | JP6190387B2 (enExample) |
| CN (1) | CN104066520A (enExample) |
| BR (1) | BR112014018080A8 (enExample) |
| MX (1) | MX2014008852A (enExample) |
| RU (1) | RU2627062C2 (enExample) |
| WO (1) | WO2013111063A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5578810B2 (ja) * | 2009-06-19 | 2014-08-27 | キヤノン株式会社 | 静電容量型の電気機械変換装置 |
| EP3049194B1 (en) * | 2013-09-24 | 2022-06-29 | Koninklijke Philips N.V. | Cmut device manufacturing method, cmut device and apparatus |
| JP6882890B2 (ja) * | 2013-11-18 | 2021-06-02 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | 超音波トランスデューサアセンブリ |
| KR20160006494A (ko) * | 2014-07-09 | 2016-01-19 | 삼성전자주식회사 | 와이어 본딩을 이용한 정전용량 미세가공 초음파 변환기 프로브 |
| EP3316791B1 (en) | 2015-07-02 | 2020-08-05 | Koninklijke Philips N.V. | Multi-mode capacitive micromachined ultrasound transducer and associated devices and systems |
| EP3559972B1 (en) | 2016-12-22 | 2025-10-15 | Koninklijke Philips N.V. | Systems and methods of operation of capacitive radio frequency micro-electromechanical switches |
| JP2021522734A (ja) * | 2018-05-03 | 2021-08-30 | バタフライ ネットワーク，インコーポレイテッド | Ｃｍｏｓセンサ上の超音波トランスデューサ用の圧力ポート |
| US12253391B2 (en) | 2018-05-24 | 2025-03-18 | The Research Foundation For The State University Of New York | Multielectrode capacitive sensor without pull-in risk |
| CN109665488B (zh) * | 2018-12-29 | 2024-07-19 | 杭州士兰集成电路有限公司 | Mems器件及其制造方法 |
| TW202045099A (zh) | 2019-02-07 | 2020-12-16 | 美商蝴蝶網路公司 | 用於微加工超音波傳感器裝置的雙層金屬電極 |
| US11684951B2 (en) | 2019-08-08 | 2023-06-27 | Bfly Operations, Inc. | Micromachined ultrasonic transducer devices having truncated circle shaped cavities |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007528153A (ja) * | 2004-02-06 | 2007-10-04 | ジョージア テック リサーチ コーポレイション | Ｃｍｕｔデバイス及び製造方法 |
| US7172947B2 (en) * | 2004-08-31 | 2007-02-06 | Micron Technology, Inc | High dielectric constant transition metal oxide materials |
| CA2607885A1 (en) * | 2005-05-18 | 2006-11-23 | Kolo Technologies, Inc. | Through-wafer interconnection |
| KR100648860B1 (ko) | 2005-09-08 | 2006-11-24 | 주식회사 하이닉스반도체 | 유전막 및 그 형성방법과, 상기 유전막을 구비한 반도체메모리 소자 및 그 제조방법 |
| JP4724505B2 (ja) * | 2005-09-09 | 2011-07-13 | 株式会社日立製作所 | 超音波探触子およびその製造方法 |
| JP4961260B2 (ja) * | 2007-05-16 | 2012-06-27 | 株式会社日立製作所 | 半導体装置 |
| US20080315331A1 (en) * | 2007-06-25 | 2008-12-25 | Robert Gideon Wodnicki | Ultrasound system with through via interconnect structure |
| EP2170531A2 (en) * | 2007-07-31 | 2010-04-07 | Koninklijke Philips Electronics N.V. | Cmuts with a high-k dielectric |
| CA2695454C (en) * | 2007-08-23 | 2016-09-20 | Purdue Research Foundation | Intra-ocular pressure sensor |
| US10092270B2 (en) * | 2007-09-17 | 2018-10-09 | Koninklijke Philips Electronics N.V. | Pre-collapsed CMUT with mechanical collapse retention |
| WO2009122314A1 (en) * | 2008-03-31 | 2009-10-08 | Nxp B.V. | A sensor chip and a method of manufacturing the same |
| JP5305993B2 (ja) * | 2008-05-02 | 2013-10-02 | キヤノン株式会社 | 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子 |
| EP2326432A2 (en) | 2008-09-16 | 2011-06-01 | Koninklijke Philips Electronics N.V. | Capacitive micromachined ultrasound transducer |
| FR2939003B1 (fr) * | 2008-11-21 | 2011-02-25 | Commissariat Energie Atomique | Cellule cmut formee d'une membrane de nano-tubes ou de nano-fils ou de nano-poutres et dispositif d'imagerie acoustique ultra haute frequence comprenant une pluralite de telles cellules |
| JP2011054708A (ja) | 2009-09-01 | 2011-03-17 | Elpida Memory Inc | 絶縁膜およびその製造方法、半導体装置、ならびにデータ処理システム |
| US8617078B2 (en) * | 2010-03-12 | 2013-12-31 | Hitachi Medical Corporation | Ultrasonic transducer and ultrasonic diagnostic device using same |
| US8530322B2 (en) * | 2010-12-16 | 2013-09-10 | Intermolecular, Inc. | Method of forming stacked metal oxide layers |
| US20120228773A1 (en) * | 2011-03-08 | 2012-09-13 | International Business Machines Corporation | Large-grain, low-resistivity tungsten on a conductive compound |
| US8794075B2 (en) * | 2011-08-11 | 2014-08-05 | Nxp, B.V. | Multilayered NONON membrane in a MEMS sensor |
-
2013
- 2013-01-23 CN CN201380006571.XA patent/CN104066520A/zh active Pending
- 2013-01-23 MX MX2014008852A patent/MX2014008852A/es unknown
- 2013-01-23 JP JP2014553838A patent/JP6190387B2/ja active Active
- 2013-01-23 RU RU2014134901A patent/RU2627062C2/ru not_active IP Right Cessation
- 2013-01-23 WO PCT/IB2013/050572 patent/WO2013111063A1/en not_active Ceased
- 2013-01-23 US US14/370,110 patent/US9828236B2/en active Active
- 2013-01-23 EP EP13709546.9A patent/EP2806983B1/en active Active
- 2013-01-23 BR BR112014018080A patent/BR112014018080A8/pt not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US9828236B2 (en) | 2017-11-28 |
| WO2013111063A1 (en) | 2013-08-01 |
| CN104066520A (zh) | 2014-09-24 |
| JP2015506641A (ja) | 2015-03-02 |
| BR112014018080A2 (enExample) | 2017-06-20 |
| BR112014018080A8 (pt) | 2017-07-11 |
| EP2806983A1 (en) | 2014-12-03 |
| RU2627062C2 (ru) | 2017-08-03 |
| EP2806983B1 (en) | 2020-04-01 |
| RU2014134901A (ru) | 2016-03-27 |
| JP6190387B2 (ja) | 2017-08-30 |
| US20140332911A1 (en) | 2014-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| MX2014008852A (es) | Transductor capacitivo micromaquinado y metodo de manufactura del mismo. | |
| WO2014080310A3 (en) | Capacitive micro-machined transducer and method of manufacturing the same | |
| EP2505548A3 (en) | Micromechanical sound transducer having a membrane support with tapered surface | |
| JP2015508625A5 (enExample) | ||
| WO2012054810A3 (en) | Manufacturing of small film strips | |
| WO2019068034A3 (en) | Nanopore device and method of manufacturing same | |
| EP3901685A3 (en) | Fabry-perot interference filter | |
| WO2011153095A3 (en) | Metal gate structures and methods for forming thereof | |
| JP2015506641A5 (enExample) | ||
| WO2017067813A3 (en) | A method of manufacturing a pellicle for a lithographic apparatus, a pellicle for a lithographic apparatus, a lithographic apparatus, a device manufacturing method, an apparatus for processing a pellicle, and a method for processing a pellicle | |
| WO2012138671A3 (en) | Highly porous ceramic material and method of use and forming same | |
| WO2012174260A3 (en) | Pinhole-free dielectric thin film fabrication | |
| JP2015042788A5 (enExample) | ||
| MX2014010874A (es) | Progresion de pasada avanzada para soldadura de aportacion. | |
| JP2014534336A5 (enExample) | ||
| JP2015536622A5 (enExample) | ||
| EP2555234A3 (en) | Electrostatic clamp, lithographic apparatus and method of manufacturing an electrostatic clamp | |
| WO2010140792A3 (en) | Method for manufacturing 3-dimensional structures using thin film with columnar nano pores and manufacture thereof | |
| EP3956912A4 (en) | ENHANCEMENTS TO ATOMIC LAYER DEPOSITION ON HIGH ASPECT RATIO ELECTRODE STRUCTURES | |
| SG10201809273VA (en) | Light wave separation lattices and methods of forming light wave separation lattices | |
| WO2014007894A3 (en) | Composites including silicon-oxy-carbide layers and methods of making the same | |
| JP2013520331A5 (enExample) | ||
| GB201020503D0 (en) | Nanopore devices | |
| WO2015090991A3 (de) | Verfahren zur herstellung strukturierter metallischer beschichtungen | |
| IT1406644B1 (it) | Substrato (fetta) di materiale semiconduttore con sovrastanti strati eteroepitassiali assumenti una struttura sandwich, idoneo per la fabbricazione di componenti elettronici ibridi. |