RU2627062C2 - Емкостной преобразователь, полученный микрообработкой, и способ его изготовления - Google Patents

Емкостной преобразователь, полученный микрообработкой, и способ его изготовления Download PDF

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Publication number
RU2627062C2
RU2627062C2 RU2014134901A RU2014134901A RU2627062C2 RU 2627062 C2 RU2627062 C2 RU 2627062C2 RU 2014134901 A RU2014134901 A RU 2014134901A RU 2014134901 A RU2014134901 A RU 2014134901A RU 2627062 C2 RU2627062 C2 RU 2627062C2
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RU
Russia
Prior art keywords
layer
electrode layer
dielectric
cmut
pattern
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RU2014134901A
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English (en)
Russian (ru)
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RU2014134901A (ru
Inventor
Петер ДИРКСЕН
Рюдигер МАУКЗОК
Корай КАРАКАЯ
Йохан Хендрик КЛОТВИЙК
Боут МАРСЕЛИС
Марсель МЮЛДЕР
Original Assignee
Конинклейке Филипс Н.В.
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Application filed by Конинклейке Филипс Н.В. filed Critical Конинклейке Филипс Н.В.
Publication of RU2014134901A publication Critical patent/RU2014134901A/ru
Application granted granted Critical
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0027—Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Acoustics & Sound (AREA)
  • Physics & Mathematics (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Measuring Fluid Pressure (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Drying Of Semiconductors (AREA)
  • Pressure Sensors (AREA)
RU2014134901A 2012-01-27 2013-01-23 Емкостной преобразователь, полученный микрообработкой, и способ его изготовления RU2627062C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261591308P 2012-01-27 2012-01-27
US61/591,308 2012-01-27
PCT/IB2013/050572 WO2013111063A1 (en) 2012-01-27 2013-01-23 Capacitive micro-machined transducer and method of manufacturing the same

Publications (2)

Publication Number Publication Date
RU2014134901A RU2014134901A (ru) 2016-03-27
RU2627062C2 true RU2627062C2 (ru) 2017-08-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU2014134901A RU2627062C2 (ru) 2012-01-27 2013-01-23 Емкостной преобразователь, полученный микрообработкой, и способ его изготовления

Country Status (8)

Country Link
US (1) US9828236B2 (enExample)
EP (1) EP2806983B1 (enExample)
JP (1) JP6190387B2 (enExample)
CN (1) CN104066520A (enExample)
BR (1) BR112014018080A8 (enExample)
MX (1) MX2014008852A (enExample)
RU (1) RU2627062C2 (enExample)
WO (1) WO2013111063A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2862196C1 (ru) * 2025-03-10 2026-05-18 Матвей Олегович Морозов Способ изготовления емкостного переключателя

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JP5578810B2 (ja) * 2009-06-19 2014-08-27 キヤノン株式会社 静電容量型の電気機械変換装置
CN105592940B (zh) * 2013-09-24 2018-09-25 皇家飞利浦有限公司 Cmut装置制造方法、cmut装置和设备
JP6882890B2 (ja) * 2013-11-18 2021-06-02 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 超音波トランスデューサアセンブリ
KR20160006494A (ko) * 2014-07-09 2016-01-19 삼성전자주식회사 와이어 본딩을 이용한 정전용량 미세가공 초음파 변환기 프로브
US11766237B2 (en) 2015-07-02 2023-09-26 Philips Image Guided Therapy Corporation Multi-mode capacitive micromachined ultrasound transducer and associated devices, systems, and methods for multiple different intravascular sensing capabilities
JP6998379B2 (ja) 2016-12-22 2022-01-18 コーニンクレッカ フィリップス エヌ ヴェ 容量性高周波微小電気機械スイッチのシステム及び動作方法
TW202000137A (zh) * 2018-05-03 2020-01-01 美商蝴蝶網路公司 互補式金屬氧化物半導體感測器上超音波換能器的壓力口
US12253391B2 (en) 2018-05-24 2025-03-18 The Research Foundation For The State University Of New York Multielectrode capacitive sensor without pull-in risk
CN109665488B (zh) * 2018-12-29 2024-07-19 杭州士兰集成电路有限公司 Mems器件及其制造方法
TW202045099A (zh) 2019-02-07 2020-12-16 美商蝴蝶網路公司 用於微加工超音波傳感器裝置的雙層金屬電極
US11684951B2 (en) 2019-08-08 2023-06-27 Bfly Operations, Inc. Micromachined ultrasonic transducer devices having truncated circle shaped cavities
US12611697B2 (en) 2023-09-01 2026-04-28 GE Precision Healthcare LLC Higher bandwidth micromachined transducers mixed with biasing scheme

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US20080283945A1 (en) * 2007-05-16 2008-11-20 Hitachi, Ltd Semiconductor device
US20100202254A1 (en) * 2007-07-31 2010-08-12 Koninklijke Philips Electronics N.V. Cmuts with a high-k dielectric
US20110242932A1 (en) * 2008-11-21 2011-10-06 Lebental Berengere Cmut cell formed from a membrane of nanotubes or nanowires or nanorods and device for ultra high frequency acoustic imaging including multiple cells of this kind

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JP4724505B2 (ja) * 2005-09-09 2011-07-13 株式会社日立製作所 超音波探触子およびその製造方法
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US20050177045A1 (en) * 2004-02-06 2005-08-11 Georgia Tech Research Corporation cMUT devices and fabrication methods
US20080283945A1 (en) * 2007-05-16 2008-11-20 Hitachi, Ltd Semiconductor device
US20100202254A1 (en) * 2007-07-31 2010-08-12 Koninklijke Philips Electronics N.V. Cmuts with a high-k dielectric
US20110242932A1 (en) * 2008-11-21 2011-10-06 Lebental Berengere Cmut cell formed from a membrane of nanotubes or nanowires or nanorods and device for ultra high frequency acoustic imaging including multiple cells of this kind

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2862196C1 (ru) * 2025-03-10 2026-05-18 Матвей Олегович Морозов Способ изготовления емкостного переключателя

Also Published As

Publication number Publication date
WO2013111063A1 (en) 2013-08-01
MX2014008852A (es) 2014-10-06
US9828236B2 (en) 2017-11-28
BR112014018080A2 (enExample) 2017-06-20
CN104066520A (zh) 2014-09-24
BR112014018080A8 (pt) 2017-07-11
JP6190387B2 (ja) 2017-08-30
JP2015506641A (ja) 2015-03-02
EP2806983B1 (en) 2020-04-01
RU2014134901A (ru) 2016-03-27
EP2806983A1 (en) 2014-12-03
US20140332911A1 (en) 2014-11-13

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20190124