BR112014018080A8 - Método de fabricação de um transdutor microusinado capacitivo, e, transdutor microusinado capacitivo - Google Patents

Método de fabricação de um transdutor microusinado capacitivo, e, transdutor microusinado capacitivo

Info

Publication number
BR112014018080A8
BR112014018080A8 BR112014018080A BR112014018080A BR112014018080A8 BR 112014018080 A8 BR112014018080 A8 BR 112014018080A8 BR 112014018080 A BR112014018080 A BR 112014018080A BR 112014018080 A BR112014018080 A BR 112014018080A BR 112014018080 A8 BR112014018080 A8 BR 112014018080A8
Authority
BR
Brazil
Prior art keywords
transducer
capacitive
manufacturing
micromachining
dielectric film
Prior art date
Application number
BR112014018080A
Other languages
English (en)
Other versions
BR112014018080A2 (pt
Inventor
Marcelis Bout
Dirksen Peter
Mauczok Ruediger
Karakaya Koray
Hendrik Klootwijk Johan
Mulder Marcel
Original Assignee
Koninklijke Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Nv filed Critical Koninklijke Philips Nv
Publication of BR112014018080A2 publication Critical patent/BR112014018080A2/pt
Publication of BR112014018080A8 publication Critical patent/BR112014018080A8/pt

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0027—Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Measuring Fluid Pressure (AREA)
  • Drying Of Semiconductors (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)

Abstract

MÉTODO DE FABRICAÇÃO DE UM TRANSDUTOR MICROUSINADO CAPACITIVO, E, TRANSDUTOR MICROUSINADO CAPACITIVO. A presente invenção se refere a um método de fabricação de um transdutor microusinado capacitivo (100), em particular, um CMUT, o método compreendendo depositar uma primeira camada de eletrodo (10) em um substrato (1), depositar um primeiro filme dielétrico (20) na primeira camada de eletrodo (10), depositar uma camada sacrificial (30) no primeiro filme dielétrico (20), a camada sacrificial (30) sendo removível para formação de uma cavidade (35) do transdutor, depositar um segundo filme dielétrico (40) na camada sacrificial (30), depositar uma segunda camada de eletrodo (50) no segundo filme dielétrico (40) e padronizar pelo menos um(a) das camadas e dos filmes depositados (10, 20, 30, 40, 50), em que as etapas de depósito são realizadas por Deposição de Camada Atômica. A presente invenção ainda se refere a um transdutor microusinado capacitivo (100), em particular, um CMUT, fabricado por tal método.
BR112014018080A 2012-01-27 2013-01-23 Método de fabricação de um transdutor microusinado capacitivo, e, transdutor microusinado capacitivo BR112014018080A8 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261591308P 2012-01-27 2012-01-27
PCT/IB2013/050572 WO2013111063A1 (en) 2012-01-27 2013-01-23 Capacitive micro-machined transducer and method of manufacturing the same

Publications (2)

Publication Number Publication Date
BR112014018080A2 BR112014018080A2 (pt) 2017-06-20
BR112014018080A8 true BR112014018080A8 (pt) 2017-07-11

Family

ID=47884432

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112014018080A BR112014018080A8 (pt) 2012-01-27 2013-01-23 Método de fabricação de um transdutor microusinado capacitivo, e, transdutor microusinado capacitivo

Country Status (8)

Country Link
US (1) US9828236B2 (pt)
EP (1) EP2806983B1 (pt)
JP (1) JP6190387B2 (pt)
CN (1) CN104066520A (pt)
BR (1) BR112014018080A8 (pt)
MX (1) MX2014008852A (pt)
RU (1) RU2627062C2 (pt)
WO (1) WO2013111063A1 (pt)

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* Cited by examiner, † Cited by third party
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JP5578810B2 (ja) * 2009-06-19 2014-08-27 キヤノン株式会社 静電容量型の電気機械変換装置
JP6416232B2 (ja) * 2013-09-24 2018-10-31 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Ｃｍｕｔデバイス製造方法、ｃｍｕｔデバイス、及び装置
US20160296207A1 (en) * 2013-11-18 2016-10-13 Koninklijke Philips N.V. Ultrasound transducer assembly
KR20160006494A (ko) * 2014-07-09 2016-01-19 삼성전자주식회사 와이어 본딩을 이용한 정전용량 미세가공 초음파 변환기 프로브
JP6932085B2 (ja) 2015-07-02 2021-09-08 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． マルチモード容量性マイクロマシン超音波トランスデューサ並びに関連するデバイス、システム及び方法
WO2018115226A1 (en) 2016-12-22 2018-06-28 Koninklijke Philips N.V. Systems and methods of operation of capacitive radio frequency micro-electromechanical switches
CN109665488A (zh) * 2018-12-29 2019-04-23 杭州士兰集成电路有限公司 Mems器件及其制造方法
US11766696B2 (en) 2019-02-07 2023-09-26 Bfly Operations, Inc. Bi-layer metal electrode for micromachined ultrasonic transducer devices
US11684951B2 (en) 2019-08-08 2023-06-27 Bfly Operations, Inc. Micromachined ultrasonic transducer devices having truncated circle shaped cavities

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JP2007528153A (ja) * 2004-02-06 2007-10-04 ジョージア テック リサーチ コーポレイション Ｃｍｕｔデバイス及び製造方法
US7172947B2 (en) * 2004-08-31 2007-02-06 Micron Technology, Inc High dielectric constant transition metal oxide materials
EP1883956A4 (en) * 2005-05-18 2011-03-23 Kolo Technologies Inc BY-THE-WAFER CONNECTION
KR100648860B1 (ko) 2005-09-08 2006-11-24 주식회사 하이닉스반도체 유전막 및 그 형성방법과, 상기 유전막을 구비한 반도체메모리 소자 및 그 제조방법
JP4724505B2 (ja) * 2005-09-09 2011-07-13 株式会社日立製作所 超音波探触子およびその製造方法
JP4961260B2 (ja) * 2007-05-16 2012-06-27 株式会社日立製作所 半導体装置
US20080315331A1 (en) * 2007-06-25 2008-12-25 Robert Gideon Wodnicki Ultrasound system with through via interconnect structure
US8203912B2 (en) * 2007-07-31 2012-06-19 Koninklijke Philips Electronics N.V. CMUTs with a high-k dielectric
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JP5305993B2 (ja) * 2008-05-02 2013-10-02 キヤノン株式会社 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子
CN102159334A (zh) 2008-09-16 2011-08-17 皇家飞利浦电子股份有限公司 电容性微机械加工的超声换能器
FR2939003B1 (fr) 2008-11-21 2011-02-25 Commissariat Energie Atomique Cellule cmut formee d'une membrane de nano-tubes ou de nano-fils ou de nano-poutres et dispositif d'imagerie acoustique ultra haute frequence comprenant une pluralite de telles cellules
KR101689346B1 (ko) * 2009-02-27 2016-12-23 코닌클리케 필립스 엔.브이. 기계적 붕괴 보유를 갖는 사전 붕괴된 ｃｍｕｔ
JP2011054708A (ja) * 2009-09-01 2011-03-17 Elpida Memory Inc 絶縁膜およびその製造方法、半導体装置、ならびにデータ処理システム
JP5355777B2 (ja) * 2010-03-12 2013-11-27 株式会社日立メディコ 超音波トランスデューサおよびそれを用いた超音波診断装置
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US20120228773A1 (en) * 2011-03-08 2012-09-13 International Business Machines Corporation Large-grain, low-resistivity tungsten on a conductive compound
US8794075B2 (en) * 2011-08-11 2014-08-05 Nxp, B.V. Multilayered NONON membrane in a MEMS sensor

Also Published As

Publication number Publication date
CN104066520A (zh) 2014-09-24
BR112014018080A2 (pt) 2017-06-20
JP2015506641A (ja) 2015-03-02
JP6190387B2 (ja) 2017-08-30
MX2014008852A (es) 2014-10-06
RU2014134901A (ru) 2016-03-27
EP2806983B1 (en) 2020-04-01
US20140332911A1 (en) 2014-11-13
US9828236B2 (en) 2017-11-28
EP2806983A1 (en) 2014-12-03
RU2627062C2 (ru) 2017-08-03
WO2013111063A1 (en) 2013-08-01

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Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 7A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2550 DE 19-11-2019 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.