BR112014018083A8 - Método para a fabricação de um transdutor capacitivo micro-usinado, em particular um cmut e transdutor capacitivo micro-usinado, em particular um cmut - Google Patents

Método para a fabricação de um transdutor capacitivo micro-usinado, em particular um cmut e transdutor capacitivo micro-usinado, em particular um cmut

Info

Publication number
BR112014018083A8
BR112014018083A8 BR112014018083A BR112014018083A BR112014018083A8 BR 112014018083 A8 BR112014018083 A8 BR 112014018083A8 BR 112014018083 A BR112014018083 A BR 112014018083A BR 112014018083 A BR112014018083 A BR 112014018083A BR 112014018083 A8 BR112014018083 A8 BR 112014018083A8
Authority
BR
Brazil
Prior art keywords
cmut
micro
capacitive transducer
machining
layer
Prior art date
Application number
BR112014018083A
Other languages
English (en)
Other versions
BR112014018083A2 (pt
Inventor
Hendrik Klootwijk Johan
Marcelis Bout
Dirksen Peter
Karakaya Koray
Mulder Marcel
Mauczok Ruediger
Original Assignee
Koninklijke Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Nv filed Critical Koninklijke Philips Nv
Publication of BR112014018083A2 publication Critical patent/BR112014018083A2/pt
Publication of BR112014018083A8 publication Critical patent/BR112014018083A8/pt

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/002—Electrostatic motors
    • H02N1/006—Electrostatic motors of the gap-closing type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/00373—Selective deposition, e.g. printing or microcontact printing
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/06—Influence generators
    • H02N1/08—Influence generators with conductive charge carrier, i.e. capacitor machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Pressure Sensors (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Micromachines (AREA)

Abstract

MÉTODO PARA A FABRICAÇÃO DE UM TRANSDUTOR CAPACITIVO MICRO-USINADO, EM PARTICULAR UM CMUT E TRANSDUTOR CAPACITIVO MICRO-USINADO, EM PARTICULAR UM CMUT. A presente invenção se refere a um método para a fabricação de um transdutor capacitivo micro-usinado (100), em particular um CMUT, o método compreendendo depositar uma primeira camada de eletrodo (10) em um substrato (1), depositar um primeiro filme dielétrico (20) na primeira camada de eletrodo (10), depositar uma camada de sacrifício (30) no primeiro filme dielétrico (20), a camada de sacrifício (30) sendo removível para a formação de uma cavidade (35) do transdutor, depositar um segundo filme dielétrico (40) na camada de sacrifício (30), e depositar uma segunda camada de eletrodo (50) no segundo filme dielétrico (40), em que o primeiro filme dielétrico (20) e/ou o segundo filme dielétrico (40) compreendem uma primeira camada compreendendo um óxido, uma segunda camada compreendendo um material com alto k, e uma terceira camada compreendendo um óxido, e em que as etapas de depósito são feitas por Deposição de Camada Atômica. A presente invenção ainda se refere a um transdutor capacitivo micro-usinado (100), em particular um CMUT, fabricado por esse método.
BR112014018083A 2012-01-27 2013-01-18 Método para a fabricação de um transdutor capacitivo micro-usinado, em particular um cmut e transdutor capacitivo micro-usinado, em particular um cmut BR112014018083A8 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261591344P 2012-01-27 2012-01-27
PCT/IB2013/050481 WO2013111040A1 (en) 2012-01-27 2013-01-18 Capacitive micro-machined transducer and method of manufacturing the same

Publications (2)

Publication Number Publication Date
BR112014018083A2 BR112014018083A2 (pt) 2017-06-20
BR112014018083A8 true BR112014018083A8 (pt) 2017-07-11

Family

ID=47780106

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112014018083A BR112014018083A8 (pt) 2012-01-27 2013-01-18 Método para a fabricação de um transdutor capacitivo micro-usinado, em particular um cmut e transdutor capacitivo micro-usinado, em particular um cmut

Country Status (8)

Country Link
US (2) US9231496B2 (pt)
EP (1) EP2806982B1 (pt)
JP (1) JP6209537B2 (pt)
CN (1) CN104066521B (pt)
BR (1) BR112014018083A8 (pt)
MX (1) MX2014008859A (pt)
RU (1) RU2618731C2 (pt)
WO (1) WO2013111040A1 (pt)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2607720C2 (ru) 2011-12-20 2017-01-10 Конинклейке Филипс Н.В. Устройство ультразвукового преобразователя и способ его изготовления
JP6209537B2 (ja) * 2012-01-27 2017-10-04 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 容量性マイクロマシン・トランスデューサ及びこれを製造する方法
JP6416232B2 (ja) * 2013-09-24 2018-10-31 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Ｃｍｕｔデバイス製造方法、ｃｍｕｔデバイス、及び装置
JP6381195B2 (ja) 2013-10-22 2018-08-29 キヤノン株式会社 静電容量型トランスデューサ及びその作製方法
JP6932085B2 (ja) 2015-07-02 2021-09-08 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． マルチモード容量性マイクロマシン超音波トランスデューサ並びに関連するデバイス、システム及び方法
CN107799386B (zh) 2016-09-06 2020-04-28 中芯国际集成电路制造(北京)有限公司 半导体装置及其制造方法
CN107092880B (zh) * 2017-04-14 2023-06-20 杭州士兰微电子股份有限公司 超声波指纹传感器及其制造方法
US20220274134A1 (en) * 2019-08-30 2022-09-01 Vermon Sa Cmut transducer
US11988640B2 (en) * 2020-03-11 2024-05-21 Bfly Operations, Inc. Bottom electrode material stack for micromachined ultrasonic transducer devices
CN113873404A (zh) * 2021-09-29 2021-12-31 瑞声声学科技(深圳)有限公司 一种振膜及其制备方法、mems麦克风

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6831394B2 (en) * 2002-12-11 2004-12-14 General Electric Company Backing material for micromachined ultrasonic transducer devices
US6885056B1 (en) 2003-10-22 2005-04-26 Newport Fab, Llc High-k dielectric stack in a MIM capacitor and method for its fabrication
KR100577562B1 (ko) * 2004-02-05 2006-05-08 삼성전자주식회사 핀 트랜지스터 형성방법 및 그에 따른 구조
JP4347885B2 (ja) * 2004-06-03 2009-10-21 オリンパス株式会社 静電容量型超音波振動子の製造方法、当該製造方法によって製造された静電容量型超音波振動子を備えた超音波内視鏡装置、静電容量型超音波プローブおよび静電容量型超音波振動子
JP4746291B2 (ja) * 2004-08-05 2011-08-10 オリンパス株式会社 静電容量型超音波振動子、及びその製造方法
US7172947B2 (en) * 2004-08-31 2007-02-06 Micron Technology, Inc High dielectric constant transition metal oxide materials
JP4371092B2 (ja) 2004-12-14 2009-11-25 セイコーエプソン株式会社 静電アクチュエータ、液滴吐出ヘッド及びその製造方法、液滴吐出装置並びにデバイス
US7037746B1 (en) * 2004-12-27 2006-05-02 General Electric Company Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane
ITRM20050093A1 (it) 2005-03-04 2006-09-05 Consiglio Nazionale Ricerche Procedimento micromeccanico superficiale di fabbricazione di trasduttori ultracustici capacitivi microlavorati e relativo trasduttore ultracustico capacitivo microlavorato.
JP4724505B2 (ja) * 2005-09-09 2011-07-13 株式会社日立製作所 超音波探触子およびその製造方法
US7902018B2 (en) * 2006-09-26 2011-03-08 Applied Materials, Inc. Fluorine plasma treatment of high-k gate stack for defect passivation
US8736000B1 (en) * 2006-10-19 2014-05-27 Sandia Corporation Capacitive chemical sensor
JP4961260B2 (ja) * 2007-05-16 2012-06-27 株式会社日立製作所 半導体装置
US8203912B2 (en) * 2007-07-31 2012-06-19 Koninklijke Philips Electronics N.V. CMUTs with a high-k dielectric
CN101969856B (zh) * 2007-09-17 2013-06-05 皇家飞利浦电子股份有限公司 预塌陷的电容微机械超声传感器的制造及其应用
JP5408937B2 (ja) * 2007-09-25 2014-02-05 キヤノン株式会社 電気機械変換素子及びその製造方法
US8008842B2 (en) * 2007-10-26 2011-08-30 Trs Technologies, Inc. Micromachined piezoelectric ultrasound transducer arrays
WO2009077961A2 (en) * 2007-12-14 2009-06-25 Koninklijke Philips Electronics, N.V. Collapsed mode operable cmut including contoured substrate
JP5305993B2 (ja) * 2008-05-02 2013-10-02 キヤノン株式会社 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子
CN102159334A (zh) * 2008-09-16 2011-08-17 皇家飞利浦电子股份有限公司 电容性微机械加工的超声换能器
FR2939003B1 (fr) * 2008-11-21 2011-02-25 Commissariat Energie Atomique Cellule cmut formee d'une membrane de nano-tubes ou de nano-fils ou de nano-poutres et dispositif d'imagerie acoustique ultra haute frequence comprenant une pluralite de telles cellules
JP5547418B2 (ja) * 2009-03-19 2014-07-16 株式会社Ａｄｅｋａ 化学気相成長用原料及びこれを用いたシリコン含有薄膜形成方法
US20110065276A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US8188786B2 (en) * 2009-09-24 2012-05-29 International Business Machines Corporation Modularized three-dimensional capacitor array
CN102870245B (zh) * 2010-05-07 2015-07-29 独立行政法人科学技术振兴机构 功能设备的制造方法、场效应晶体管和薄膜晶体管
US8794075B2 (en) * 2011-08-11 2014-08-05 Nxp, B.V. Multilayered NONON membrane in a MEMS sensor
US9368603B2 (en) * 2011-09-15 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Contact for high-k metal gate device
US20130187236A1 (en) * 2012-01-20 2013-07-25 Globalfoundries Inc. Methods of Forming Replacement Gate Structures for Semiconductor Devices
JP6209537B2 (ja) * 2012-01-27 2017-10-04 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 容量性マイクロマシン・トランスデューサ及びこれを製造する方法
US20130270647A1 (en) * 2012-04-17 2013-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for nfet with high k metal gate
US8846468B2 (en) * 2012-12-17 2014-09-30 Intermolecular, Inc. Methods to improve leakage of high K materials

Also Published As

Publication number Publication date
JP6209537B2 (ja) 2017-10-04
EP2806982B1 (en) 2020-03-11
EP2806982A1 (en) 2014-12-03
CN104066521A (zh) 2014-09-24
US20150162852A1 (en) 2015-06-11
CN104066521B (zh) 2017-07-11
US20140375168A1 (en) 2014-12-25
RU2618731C2 (ru) 2017-05-11
JP2015508625A (ja) 2015-03-19
US10008958B2 (en) 2018-06-26
US9231496B2 (en) 2016-01-05
WO2013111040A1 (en) 2013-08-01
BR112014018083A2 (pt) 2017-06-20
RU2014134810A (ru) 2016-03-20
MX2014008859A (es) 2014-10-06

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Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 7A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2549 DE 12-11-2019 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.