MX2014008852A - Transductor capacitivo micromaquinado y metodo de manufactura del mismo. - Google Patents

Transductor capacitivo micromaquinado y metodo de manufactura del mismo.

Info

Publication number
MX2014008852A
MX2014008852A MX2014008852A MX2014008852A MX2014008852A MX 2014008852 A MX2014008852 A MX 2014008852A MX 2014008852 A MX2014008852 A MX 2014008852A MX 2014008852 A MX2014008852 A MX 2014008852A MX 2014008852 A MX2014008852 A MX 2014008852A
Authority
MX
Mexico
Prior art keywords
depositing
manufacturing
capacitive micro
dielectric film
transducer
Prior art date
Application number
MX2014008852A
Other languages
English (en)
Inventor
Peter Dirksen
Bout Marcelis
Ruediger Mauczok
Koray Karakaya
Johan Hendrik Klootwijk
Marcel Mulder
Original Assignee
Koninkl Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Nv filed Critical Koninkl Philips Nv
Publication of MX2014008852A publication Critical patent/MX2014008852A/es

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0027—Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Acoustics & Sound (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Signal Processing (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Measuring Fluid Pressure (AREA)
  • Micromachines (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Drying Of Semiconductors (AREA)
  • Pressure Sensors (AREA)

Abstract

La presente invención se relaciona con un método de manufactura de un transductor capacitivo micromaquinado (100), en particular un CMUT, el método comprende depositar una primera capa de electrodo (10) sobre un sustrato (1), depositar una primera película de dieléctrico (20) sobre la primera capa de electrodo (10), depositar una capa de sacrificio (30) sobre la primera película de dieléctrico (20), siendo la capa de sacrificio (30) removible para formar una cavidad (35) del transductor, depositar una segunda película de dieléctrico (40) sobre la capa de sacrificio (30), depositar una segunda capa de electrodo (50) sobre la segunda película de dieléctrico (40), y formar un patrón en por lo menos una de las capas y películas depositadas (10, 20, 30, 40, 60), en donde las etapas de deposición se realizan por deposición de capa atómica. La presente invención se relaciona además con un transductor capacitivo micromaquinado (100), en particular un CMUT, manufacturado por dicho método.

Description

insufficientOCRQuality

Claims (1)

  1. insufficientOCRQuality
MX2014008852A 2012-01-27 2013-01-23 Transductor capacitivo micromaquinado y metodo de manufactura del mismo. MX2014008852A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261591308P 2012-01-27 2012-01-27
PCT/IB2013/050572 WO2013111063A1 (en) 2012-01-27 2013-01-23 Capacitive micro-machined transducer and method of manufacturing the same

Publications (1)

Publication Number Publication Date
MX2014008852A true MX2014008852A (es) 2014-10-06

Family

ID=47884432

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2014008852A MX2014008852A (es) 2012-01-27 2013-01-23 Transductor capacitivo micromaquinado y metodo de manufactura del mismo.

Country Status (8)

Country Link
US (1) US9828236B2 (es)
EP (1) EP2806983B1 (es)
JP (1) JP6190387B2 (es)
CN (1) CN104066520A (es)
BR (1) BR112014018080A8 (es)
MX (1) MX2014008852A (es)
RU (1) RU2627062C2 (es)
WO (1) WO2013111063A1 (es)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5578810B2 (ja) * 2009-06-19 2014-08-27 キヤノン株式会社 静電容量型の電気機械変換装置
WO2015043989A1 (en) * 2013-09-24 2015-04-02 Koninklijke Philips N.V. Cmut device manufacturing method, cmut device and apparatus
EP3071338B1 (en) * 2013-11-18 2022-05-11 Koninklijke Philips N.V. Ultrasound transducer assembly
KR20160006494A (ko) * 2014-07-09 2016-01-19 삼성전자주식회사 와이어 본딩을 이용한 정전용량 미세가공 초음파 변환기 프로브
EP3316791B1 (en) 2015-07-02 2020-08-05 Koninklijke Philips N.V. Multi-mode capacitive micromachined ultrasound transducer and associated devices and systems
EP3559972A1 (en) 2016-12-22 2019-10-30 Koninklijke Philips N.V. Systems and methods of operation of capacitive radio frequency micro-electromechanical switches
CN109665488A (zh) * 2018-12-29 2019-04-23 杭州士兰集成电路有限公司 Mems器件及其制造方法
WO2020163595A1 (en) * 2019-02-07 2020-08-13 Butterfly Network, Inc Bi-layer metal electrode for micromachined ultrasonic transducer devices
US11684951B2 (en) 2019-08-08 2023-06-27 Bfly Operations, Inc. Micromachined ultrasonic transducer devices having truncated circle shaped cavities

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050177045A1 (en) 2004-02-06 2005-08-11 Georgia Tech Research Corporation cMUT devices and fabrication methods
US7172947B2 (en) * 2004-08-31 2007-02-06 Micron Technology, Inc High dielectric constant transition metal oxide materials
CA2607885A1 (en) * 2005-05-18 2006-11-23 Kolo Technologies, Inc. Through-wafer interconnection
KR100648860B1 (ko) * 2005-09-08 2006-11-24 주식회사 하이닉스반도체 유전막 및 그 형성방법과, 상기 유전막을 구비한 반도체메모리 소자 및 그 제조방법
JP4724505B2 (ja) * 2005-09-09 2011-07-13 株式会社日立製作所 超音波探触子およびその製造方法
JP4961260B2 (ja) * 2007-05-16 2012-06-27 株式会社日立製作所 半導体装置
US20080315331A1 (en) * 2007-06-25 2008-12-25 Robert Gideon Wodnicki Ultrasound system with through via interconnect structure
US8203912B2 (en) * 2007-07-31 2012-06-19 Koninklijke Philips Electronics N.V. CMUTs with a high-k dielectric
CA2695454C (en) * 2007-08-23 2016-09-20 Purdue Research Foundation Intra-ocular pressure sensor
WO2010097729A1 (en) * 2009-02-27 2010-09-02 Koninklijke Philips Electronics, N.V. Pre-collapsed cmut with mechanical collapse retention
US8821794B2 (en) * 2008-03-31 2014-09-02 Nxp, B.V. Sensor chip and method of manufacturing the same
JP5305993B2 (ja) * 2008-05-02 2013-10-02 キヤノン株式会社 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子
RU2511671C2 (ru) 2008-09-16 2014-04-10 Конинклейке Филипс Электроникс Н.В. Емкостной микрообработанный ультразвуковой преобразователь
FR2939003B1 (fr) 2008-11-21 2011-02-25 Commissariat Energie Atomique Cellule cmut formee d'une membrane de nano-tubes ou de nano-fils ou de nano-poutres et dispositif d'imagerie acoustique ultra haute frequence comprenant une pluralite de telles cellules
JP2011054708A (ja) * 2009-09-01 2011-03-17 Elpida Memory Inc 絶縁膜およびその製造方法、半導体装置、ならびにデータ処理システム
US8617078B2 (en) * 2010-03-12 2013-12-31 Hitachi Medical Corporation Ultrasonic transducer and ultrasonic diagnostic device using same
US8530322B2 (en) * 2010-12-16 2013-09-10 Intermolecular, Inc. Method of forming stacked metal oxide layers
US20120228773A1 (en) * 2011-03-08 2012-09-13 International Business Machines Corporation Large-grain, low-resistivity tungsten on a conductive compound
US8794075B2 (en) * 2011-08-11 2014-08-05 Nxp, B.V. Multilayered NONON membrane in a MEMS sensor

Also Published As

Publication number Publication date
RU2014134901A (ru) 2016-03-27
JP6190387B2 (ja) 2017-08-30
JP2015506641A (ja) 2015-03-02
US20140332911A1 (en) 2014-11-13
BR112014018080A8 (pt) 2017-07-11
RU2627062C2 (ru) 2017-08-03
EP2806983A1 (en) 2014-12-03
BR112014018080A2 (es) 2017-06-20
US9828236B2 (en) 2017-11-28
EP2806983B1 (en) 2020-04-01
CN104066520A (zh) 2014-09-24
WO2013111063A1 (en) 2013-08-01

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