JP2015508625A5 - - Google Patents

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Publication number
JP2015508625A5
JP2015508625A5 JP2014553833A JP2014553833A JP2015508625A5 JP 2015508625 A5 JP2015508625 A5 JP 2015508625A5 JP 2014553833 A JP2014553833 A JP 2014553833A JP 2014553833 A JP2014553833 A JP 2014553833A JP 2015508625 A5 JP2015508625 A5 JP 2015508625A5
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JP
Japan
Prior art keywords
layer
dielectric film
transducer
oxide
dielectric
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JP2014553833A
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English (en)
Japanese (ja)
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JP2015508625A (ja
JP6209537B2 (ja
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Priority claimed from PCT/IB2013/050481 external-priority patent/WO2013111040A1/en
Publication of JP2015508625A publication Critical patent/JP2015508625A/ja
Publication of JP2015508625A5 publication Critical patent/JP2015508625A5/ja
Application granted granted Critical
Publication of JP6209537B2 publication Critical patent/JP6209537B2/ja
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JP2014553833A 2012-01-27 2013-01-18 容量性マイクロマシン・トランスデューサ及びこれを製造する方法 Active JP6209537B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261591344P 2012-01-27 2012-01-27
US61/591,344 2012-01-27
PCT/IB2013/050481 WO2013111040A1 (en) 2012-01-27 2013-01-18 Capacitive micro-machined transducer and method of manufacturing the same

Publications (3)

Publication Number Publication Date
JP2015508625A JP2015508625A (ja) 2015-03-19
JP2015508625A5 true JP2015508625A5 (enExample) 2016-03-03
JP6209537B2 JP6209537B2 (ja) 2017-10-04

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ID=47780106

Family Applications (1)

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JP2014553833A Active JP6209537B2 (ja) 2012-01-27 2013-01-18 容量性マイクロマシン・トランスデューサ及びこれを製造する方法

Country Status (8)

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US (2) US9231496B2 (enExample)
EP (1) EP2806982B1 (enExample)
JP (1) JP6209537B2 (enExample)
CN (1) CN104066521B (enExample)
BR (1) BR112014018083A8 (enExample)
MX (1) MX2014008859A (enExample)
RU (1) RU2618731C2 (enExample)
WO (1) WO2013111040A1 (enExample)

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JP6069798B2 (ja) 2011-12-20 2017-02-01 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 超音波トランスデューサデバイス及びこれを製造する方法
US9231496B2 (en) * 2012-01-27 2016-01-05 Koninklijke Philips N.V. Capacitive micro-machined transducer and method of manufacturing the same
JP6416232B2 (ja) * 2013-09-24 2018-10-31 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Ｃｍｕｔデバイス製造方法、ｃｍｕｔデバイス、及び装置
JP6381195B2 (ja) * 2013-10-22 2018-08-29 キヤノン株式会社 静電容量型トランスデューサ及びその作製方法
US11766237B2 (en) 2015-07-02 2023-09-26 Philips Image Guided Therapy Corporation Multi-mode capacitive micromachined ultrasound transducer and associated devices, systems, and methods for multiple different intravascular sensing capabilities
CN107799386B (zh) 2016-09-06 2020-04-28 中芯国际集成电路制造(北京)有限公司 半导体装置及其制造方法
CN107092880B (zh) * 2017-04-14 2023-06-20 杭州士兰微电子股份有限公司 超声波指纹传感器及其制造方法
EP3788798B1 (en) * 2018-05-03 2023-07-05 BFLY Operations, Inc. Ultrasonic transducers with pressure ports
JP7688911B2 (ja) 2018-11-16 2025-06-05 ヴァーモン エス．エー． 容量性微細加工超音波トランスデューサ及びその製造方法
WO2021038300A1 (en) * 2019-08-30 2021-03-04 Vermon Sa Cmut transducer
US11988640B2 (en) * 2020-03-11 2024-05-21 Bfly Operations, Inc. Bottom electrode material stack for micromachined ultrasonic transducer devices
CN113873404A (zh) * 2021-09-29 2021-12-31 瑞声声学科技(深圳)有限公司 一种振膜及其制备方法、mems麦克风
TWI819775B (zh) * 2021-10-13 2023-10-21 台亞半導體股份有限公司 矽化物電容式微機電結構及其製造方法

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US6885056B1 (en) 2003-10-22 2005-04-26 Newport Fab, Llc High-k dielectric stack in a MIM capacitor and method for its fabrication
KR100577562B1 (ko) * 2004-02-05 2006-05-08 삼성전자주식회사 핀 트랜지스터 형성방법 및 그에 따른 구조
WO2005120130A1 (ja) * 2004-06-03 2005-12-15 Olympus Corporation 静電容量型超音波振動子とその製造方法、静電容量型超音波プローブ
JP4746291B2 (ja) * 2004-08-05 2011-08-10 オリンパス株式会社 静電容量型超音波振動子、及びその製造方法
US7172947B2 (en) * 2004-08-31 2007-02-06 Micron Technology, Inc High dielectric constant transition metal oxide materials
JP4371092B2 (ja) 2004-12-14 2009-11-25 セイコーエプソン株式会社 静電アクチュエータ、液滴吐出ヘッド及びその製造方法、液滴吐出装置並びにデバイス
US7037746B1 (en) * 2004-12-27 2006-05-02 General Electric Company Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane
ITRM20050093A1 (it) 2005-03-04 2006-09-05 Consiglio Nazionale Ricerche Procedimento micromeccanico superficiale di fabbricazione di trasduttori ultracustici capacitivi microlavorati e relativo trasduttore ultracustico capacitivo microlavorato.
JP4724505B2 (ja) * 2005-09-09 2011-07-13 株式会社日立製作所 超音波探触子およびその製造方法
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JP5305993B2 (ja) * 2008-05-02 2013-10-02 キヤノン株式会社 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子
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FR2939003B1 (fr) * 2008-11-21 2011-02-25 Commissariat Energie Atomique Cellule cmut formee d'une membrane de nano-tubes ou de nano-fils ou de nano-poutres et dispositif d'imagerie acoustique ultra haute frequence comprenant une pluralite de telles cellules
JP5547418B2 (ja) * 2009-03-19 2014-07-16 株式会社Ａｄｅｋａ 化学気相成長用原料及びこれを用いたシリコン含有薄膜形成方法
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US8794075B2 (en) * 2011-08-11 2014-08-05 Nxp, B.V. Multilayered NONON membrane in a MEMS sensor
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US20130187236A1 (en) * 2012-01-20 2013-07-25 Globalfoundries Inc. Methods of Forming Replacement Gate Structures for Semiconductor Devices
US9231496B2 (en) * 2012-01-27 2016-01-05 Koninklijke Philips N.V. Capacitive micro-machined transducer and method of manufacturing the same
US20130270647A1 (en) * 2012-04-17 2013-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for nfet with high k metal gate
US8846468B2 (en) * 2012-12-17 2014-09-30 Intermolecular, Inc. Methods to improve leakage of high K materials

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