JP2015508625A5 - - Google Patents

Download PDF

Info

Publication number
JP2015508625A5
JP2015508625A5 JP2014553833A JP2014553833A JP2015508625A5 JP 2015508625 A5 JP2015508625 A5 JP 2015508625A5 JP 2014553833 A JP2014553833 A JP 2014553833A JP 2014553833 A JP2014553833 A JP 2014553833A JP 2015508625 A5 JP2015508625 A5 JP 2015508625A5
Authority
JP
Japan
Prior art keywords
layer
dielectric film
transducer
oxide
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014553833A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015508625A (ja
JP6209537B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2013/050481 external-priority patent/WO2013111040A1/en
Publication of JP2015508625A publication Critical patent/JP2015508625A/ja
Publication of JP2015508625A5 publication Critical patent/JP2015508625A5/ja
Application granted granted Critical
Publication of JP6209537B2 publication Critical patent/JP6209537B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014553833A 2012-01-27 2013-01-18 容量性マイクロマシン・トランスデューサ及びこれを製造する方法 Active JP6209537B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261591344P 2012-01-27 2012-01-27
US61/591,344 2012-01-27
PCT/IB2013/050481 WO2013111040A1 (en) 2012-01-27 2013-01-18 Capacitive micro-machined transducer and method of manufacturing the same

Publications (3)

Publication Number Publication Date
JP2015508625A JP2015508625A (ja) 2015-03-19
JP2015508625A5 true JP2015508625A5 (enExample) 2016-03-03
JP6209537B2 JP6209537B2 (ja) 2017-10-04

Family

ID=47780106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014553833A Active JP6209537B2 (ja) 2012-01-27 2013-01-18 容量性マイクロマシン・トランスデューサ及びこれを製造する方法

Country Status (8)

Country Link
US (2) US9231496B2 (enExample)
EP (1) EP2806982B1 (enExample)
JP (1) JP6209537B2 (enExample)
CN (1) CN104066521B (enExample)
BR (1) BR112014018083A8 (enExample)
MX (1) MX2014008859A (enExample)
RU (1) RU2618731C2 (enExample)
WO (1) WO2013111040A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6069798B2 (ja) * 2011-12-20 2017-02-01 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 超音波トランスデューサデバイス及びこれを製造する方法
MX2014008859A (es) * 2012-01-27 2014-10-06 Koninkl Philips Nv Transductor micro-mecanizado capacitivo y metodo para la fabricacion del mismo.
US10293375B2 (en) * 2013-09-24 2019-05-21 Koninklijke Philips N.V. CMUT device manufacturing method, CMUT device and apparatus
JP6381195B2 (ja) 2013-10-22 2018-08-29 キヤノン株式会社 静電容量型トランスデューサ及びその作製方法
CN107735032B (zh) 2015-07-02 2021-09-21 皇家飞利浦有限公司 多模式电容式微加工超声换能器以及相关联的设备、系统和方法
CN107799386B (zh) * 2016-09-06 2020-04-28 中芯国际集成电路制造(北京)有限公司 半导体装置及其制造方法
CN107092880B (zh) * 2017-04-14 2023-06-20 杭州士兰微电子股份有限公司 超声波指纹传感器及其制造方法
TW202000137A (zh) * 2018-05-03 2020-01-01 美商蝴蝶網路公司 互補式金屬氧化物半導體感測器上超音波換能器的壓力口
CN113316486B (zh) 2018-11-16 2022-10-18 维蒙股份公司 电容式微机械超声换能器及其制造方法
US12427544B2 (en) * 2019-08-30 2025-09-30 Vermon Sa CMUT transducer
US11988640B2 (en) * 2020-03-11 2024-05-21 Bfly Operations, Inc. Bottom electrode material stack for micromachined ultrasonic transducer devices
CN113873404A (zh) * 2021-09-29 2021-12-31 瑞声声学科技(深圳)有限公司 一种振膜及其制备方法、mems麦克风
TWI819775B (zh) * 2021-10-13 2023-10-21 台亞半導體股份有限公司 矽化物電容式微機電結構及其製造方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6831394B2 (en) * 2002-12-11 2004-12-14 General Electric Company Backing material for micromachined ultrasonic transducer devices
US6885056B1 (en) 2003-10-22 2005-04-26 Newport Fab, Llc High-k dielectric stack in a MIM capacitor and method for its fabrication
KR100577562B1 (ko) * 2004-02-05 2006-05-08 삼성전자주식회사 핀 트랜지스터 형성방법 및 그에 따른 구조
WO2005120130A1 (ja) * 2004-06-03 2005-12-15 Olympus Corporation 静電容量型超音波振動子とその製造方法、静電容量型超音波プローブ
JP4746291B2 (ja) * 2004-08-05 2011-08-10 オリンパス株式会社 静電容量型超音波振動子、及びその製造方法
US7172947B2 (en) * 2004-08-31 2007-02-06 Micron Technology, Inc High dielectric constant transition metal oxide materials
JP4371092B2 (ja) * 2004-12-14 2009-11-25 セイコーエプソン株式会社 静電アクチュエータ、液滴吐出ヘッド及びその製造方法、液滴吐出装置並びにデバイス
US7037746B1 (en) * 2004-12-27 2006-05-02 General Electric Company Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane
ITRM20050093A1 (it) 2005-03-04 2006-09-05 Consiglio Nazionale Ricerche Procedimento micromeccanico superficiale di fabbricazione di trasduttori ultracustici capacitivi microlavorati e relativo trasduttore ultracustico capacitivo microlavorato.
JP4724505B2 (ja) * 2005-09-09 2011-07-13 株式会社日立製作所 超音波探触子およびその製造方法
WO2008039845A2 (en) * 2006-09-26 2008-04-03 Applied Materials, Inc. Fluorine plasma treatment of high-k gate stack for defect passivation
US8736000B1 (en) * 2006-10-19 2014-05-27 Sandia Corporation Capacitive chemical sensor
JP4961260B2 (ja) * 2007-05-16 2012-06-27 株式会社日立製作所 半導体装置
EP2170531A2 (en) * 2007-07-31 2010-04-07 Koninklijke Philips Electronics N.V. Cmuts with a high-k dielectric
WO2009037655A2 (en) * 2007-09-17 2009-03-26 Koninklijke Philips Electronics, N.V. Production of pre-collapsed capacitive micro-machined ultrasonic transducers and applications thereof
JP5408937B2 (ja) * 2007-09-25 2014-02-05 キヤノン株式会社 電気機械変換素子及びその製造方法
US8008842B2 (en) * 2007-10-26 2011-08-30 Trs Technologies, Inc. Micromachined piezoelectric ultrasound transducer arrays
WO2009077961A2 (en) * 2007-12-14 2009-06-25 Koninklijke Philips Electronics, N.V. Collapsed mode operable cmut including contoured substrate
JP5305993B2 (ja) * 2008-05-02 2013-10-02 キヤノン株式会社 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子
EP2326432A2 (en) * 2008-09-16 2011-06-01 Koninklijke Philips Electronics N.V. Capacitive micromachined ultrasound transducer
FR2939003B1 (fr) * 2008-11-21 2011-02-25 Commissariat Energie Atomique Cellule cmut formee d'une membrane de nano-tubes ou de nano-fils ou de nano-poutres et dispositif d'imagerie acoustique ultra haute frequence comprenant une pluralite de telles cellules
JP5547418B2 (ja) * 2009-03-19 2014-07-16 株式会社Ａｄｅｋａ 化学気相成長用原料及びこれを用いたシリコン含有薄膜形成方法
US20110065276A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US8188786B2 (en) * 2009-09-24 2012-05-29 International Business Machines Corporation Modularized three-dimensional capacitor array
CN102870245B (zh) * 2010-05-07 2015-07-29 独立行政法人科学技术振兴机构 功能设备的制造方法、场效应晶体管和薄膜晶体管
US8794075B2 (en) * 2011-08-11 2014-08-05 Nxp, B.V. Multilayered NONON membrane in a MEMS sensor
US9368603B2 (en) * 2011-09-15 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Contact for high-k metal gate device
US20130187236A1 (en) * 2012-01-20 2013-07-25 Globalfoundries Inc. Methods of Forming Replacement Gate Structures for Semiconductor Devices
MX2014008859A (es) * 2012-01-27 2014-10-06 Koninkl Philips Nv Transductor micro-mecanizado capacitivo y metodo para la fabricacion del mismo.
US20130270647A1 (en) * 2012-04-17 2013-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for nfet with high k metal gate
US8846468B2 (en) * 2012-12-17 2014-09-30 Intermolecular, Inc. Methods to improve leakage of high K materials

Similar Documents

Publication Publication Date Title
JP2015508625A5 (enExample)
JP2015506641A5 (enExample)
RU2014134810A (ru) Емкостной преобразователь, полученный микрообработкой, и способ его изготовления
JP2015536622A5 (enExample)
RU2014134901A (ru) Емкостной преобразователь, полученный микрообработкой, и способ его изготовления
JP2020536238A5 (enExample)
JP2013207086A5 (enExample)
JP2007537595A5 (enExample)
JP2014131025A5 (enExample)
JP2013168419A5 (enExample)
JP2013001009A5 (enExample)
JP2011100994A5 (ja) 半導体装置の作製方法
JP2013093546A5 (enExample)
JP2015019057A5 (enExample)
JP2006126817A5 (enExample)
WO2016100303A3 (en) Photolithography based fabrication of 3d structures
WO2012102939A3 (en) Electromechanical devices with variable mechanical layers
CN104347727A (zh) 薄膜晶体管及其制造方法以及存储电容器与半导体元件
JP2014187181A5 (enExample)
JP2012191185A5 (ja) 半導体装置の作製方法
JP2011228462A5 (enExample)
EP2866128A3 (en) Touch panel
MX2016006195A (es) Acristalamiento que comprende un sustrato recubierto con una pila que comprende una capa funcional formada de plata y una capa inferior de bloqueo grueso formada de tiox.
JP2012069938A5 (enExample)
GB201207764D0 (en) Coated structured surfaces