JP2015508625A5 - - Google Patents

Download PDF

Info

Publication number
JP2015508625A5
JP2015508625A5 JP2014553833A JP2014553833A JP2015508625A5 JP 2015508625 A5 JP2015508625 A5 JP 2015508625A5 JP 2014553833 A JP2014553833 A JP 2014553833A JP 2014553833 A JP2014553833 A JP 2014553833A JP 2015508625 A5 JP2015508625 A5 JP 2015508625A5
Authority
JP
Japan
Prior art keywords
layer
dielectric film
transducer
oxide
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014553833A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015508625A (ja
JP6209537B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2013/050481 external-priority patent/WO2013111040A1/en
Publication of JP2015508625A publication Critical patent/JP2015508625A/ja
Publication of JP2015508625A5 publication Critical patent/JP2015508625A5/ja
Application granted granted Critical
Publication of JP6209537B2 publication Critical patent/JP6209537B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014553833A 2012-01-27 2013-01-18 容量性マイクロマシン・トランスデューサ及びこれを製造する方法 Active JP6209537B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261591344P 2012-01-27 2012-01-27
US61/591,344 2012-01-27
PCT/IB2013/050481 WO2013111040A1 (en) 2012-01-27 2013-01-18 Capacitive micro-machined transducer and method of manufacturing the same

Publications (3)

Publication Number Publication Date
JP2015508625A JP2015508625A (ja) 2015-03-19
JP2015508625A5 true JP2015508625A5 (enExample) 2016-03-03
JP6209537B2 JP6209537B2 (ja) 2017-10-04

Family

ID=47780106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014553833A Active JP6209537B2 (ja) 2012-01-27 2013-01-18 容量性マイクロマシン・トランスデューサ及びこれを製造する方法

Country Status (8)

Country Link
US (2) US9231496B2 (enExample)
EP (1) EP2806982B1 (enExample)
JP (1) JP6209537B2 (enExample)
CN (1) CN104066521B (enExample)
BR (1) BR112014018083A8 (enExample)
MX (1) MX2014008859A (enExample)
RU (1) RU2618731C2 (enExample)
WO (1) WO2013111040A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6069798B2 (ja) 2011-12-20 2017-02-01 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 超音波トランスデューサデバイス及びこれを製造する方法
US9231496B2 (en) * 2012-01-27 2016-01-05 Koninklijke Philips N.V. Capacitive micro-machined transducer and method of manufacturing the same
CN105592940B (zh) * 2013-09-24 2018-09-25 皇家飞利浦有限公司 Cmut装置制造方法、cmut装置和设备
JP6381195B2 (ja) * 2013-10-22 2018-08-29 キヤノン株式会社 静電容量型トランスデューサ及びその作製方法
JP6932085B2 (ja) 2015-07-02 2021-09-08 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． マルチモード容量性マイクロマシン超音波トランスデューサ並びに関連するデバイス、システム及び方法
CN107799386B (zh) * 2016-09-06 2020-04-28 中芯国际集成电路制造(北京)有限公司 半导体装置及其制造方法
CN107092880B (zh) * 2017-04-14 2023-06-20 杭州士兰微电子股份有限公司 超声波指纹传感器及其制造方法
WO2019213388A1 (en) * 2018-05-03 2019-11-07 Butterfly Network, Inc. Pressure port for ultrasonic transducer on cmos sensor
US12350710B2 (en) 2018-11-16 2025-07-08 Vermon S.A. Capacitive micromachined ultrasonic transducer and method of manufacturing the same
CN114302774B (zh) * 2019-08-30 2023-05-23 维蒙股份公司 Cmut换能器
US11988640B2 (en) * 2020-03-11 2024-05-21 Bfly Operations, Inc. Bottom electrode material stack for micromachined ultrasonic transducer devices
CN113873404A (zh) * 2021-09-29 2021-12-31 瑞声声学科技(深圳)有限公司 一种振膜及其制备方法、mems麦克风
TWI819775B (zh) * 2021-10-13 2023-10-21 台亞半導體股份有限公司 矽化物電容式微機電結構及其製造方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6831394B2 (en) * 2002-12-11 2004-12-14 General Electric Company Backing material for micromachined ultrasonic transducer devices
US6885056B1 (en) 2003-10-22 2005-04-26 Newport Fab, Llc High-k dielectric stack in a MIM capacitor and method for its fabrication
KR100577562B1 (ko) * 2004-02-05 2006-05-08 삼성전자주식회사 핀 트랜지스터 형성방법 및 그에 따른 구조
WO2005120130A1 (ja) * 2004-06-03 2005-12-15 Olympus Corporation 静電容量型超音波振動子とその製造方法、静電容量型超音波プローブ
JP4746291B2 (ja) * 2004-08-05 2011-08-10 オリンパス株式会社 静電容量型超音波振動子、及びその製造方法
US7172947B2 (en) * 2004-08-31 2007-02-06 Micron Technology, Inc High dielectric constant transition metal oxide materials
JP4371092B2 (ja) * 2004-12-14 2009-11-25 セイコーエプソン株式会社 静電アクチュエータ、液滴吐出ヘッド及びその製造方法、液滴吐出装置並びにデバイス
US7037746B1 (en) * 2004-12-27 2006-05-02 General Electric Company Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane
ITRM20050093A1 (it) 2005-03-04 2006-09-05 Consiglio Nazionale Ricerche Procedimento micromeccanico superficiale di fabbricazione di trasduttori ultracustici capacitivi microlavorati e relativo trasduttore ultracustico capacitivo microlavorato.
JP4724505B2 (ja) * 2005-09-09 2011-07-13 株式会社日立製作所 超音波探触子およびその製造方法
WO2008039845A2 (en) * 2006-09-26 2008-04-03 Applied Materials, Inc. Fluorine plasma treatment of high-k gate stack for defect passivation
US8736000B1 (en) * 2006-10-19 2014-05-27 Sandia Corporation Capacitive chemical sensor
JP4961260B2 (ja) 2007-05-16 2012-06-27 株式会社日立製作所 半導体装置
CN101772383B (zh) * 2007-07-31 2011-11-02 皇家飞利浦电子股份有限公司 具有高k电介质的cmut
WO2009037655A2 (en) 2007-09-17 2009-03-26 Koninklijke Philips Electronics, N.V. Production of pre-collapsed capacitive micro-machined ultrasonic transducers and applications thereof
JP5408937B2 (ja) * 2007-09-25 2014-02-05 キヤノン株式会社 電気機械変換素子及びその製造方法
US8008842B2 (en) * 2007-10-26 2011-08-30 Trs Technologies, Inc. Micromachined piezoelectric ultrasound transducer arrays
JP5833312B2 (ja) * 2007-12-14 2015-12-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 輪郭成形基板を含む崩壊モードで動作可能なｃＭＵＴ
JP5305993B2 (ja) * 2008-05-02 2013-10-02 キヤノン株式会社 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子
US9132693B2 (en) * 2008-09-16 2015-09-15 Koninklijke Philps N.V. Capacitive micromachine ultrasound transducer
FR2939003B1 (fr) * 2008-11-21 2011-02-25 Commissariat Energie Atomique Cellule cmut formee d'une membrane de nano-tubes ou de nano-fils ou de nano-poutres et dispositif d'imagerie acoustique ultra haute frequence comprenant une pluralite de telles cellules
JP5547418B2 (ja) * 2009-03-19 2014-07-16 株式会社Ａｄｅｋａ 化学気相成長用原料及びこれを用いたシリコン含有薄膜形成方法
US20110065276A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US8188786B2 (en) * 2009-09-24 2012-05-29 International Business Machines Corporation Modularized three-dimensional capacitor array
US9202895B2 (en) * 2010-05-07 2015-12-01 Japan Science And Technology Agency Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric inkjet head
US8794075B2 (en) * 2011-08-11 2014-08-05 Nxp, B.V. Multilayered NONON membrane in a MEMS sensor
US9368603B2 (en) * 2011-09-15 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Contact for high-k metal gate device
US20130187236A1 (en) * 2012-01-20 2013-07-25 Globalfoundries Inc. Methods of Forming Replacement Gate Structures for Semiconductor Devices
US9231496B2 (en) * 2012-01-27 2016-01-05 Koninklijke Philips N.V. Capacitive micro-machined transducer and method of manufacturing the same
US20130270647A1 (en) * 2012-04-17 2013-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for nfet with high k metal gate
US8846468B2 (en) * 2012-12-17 2014-09-30 Intermolecular, Inc. Methods to improve leakage of high K materials

Similar Documents

Publication Publication Date Title
JP2015508625A5 (enExample)
JP2015506641A5 (enExample)
RU2014134810A (ru) Емкостной преобразователь, полученный микрообработкой, и способ его изготовления
JP2015536622A5 (enExample)
RU2014134901A (ru) Емкостной преобразователь, полученный микрообработкой, и способ его изготовления
JP2020536238A5 (enExample)
JP2013207086A5 (enExample)
JP2007537595A5 (enExample)
JP2014131025A5 (enExample)
JP2013168419A5 (enExample)
JP2013001009A5 (enExample)
JP2011100994A5 (ja) 半導体装置の作製方法
JP2013093546A5 (enExample)
JP2018173425A5 (enExample)
JP2011044698A5 (ja) 半導体装置の作製方法
EP2777909A3 (en) Case, method of manufacturing case, and electronic device
US20150348908A1 (en) Semiconductor device and manufacturing method of semiconductor device
JP2015019057A5 (enExample)
JP2014187181A5 (enExample)
CN104347727A (zh) 薄膜晶体管及其制造方法以及存储电容器与半导体元件
CN104812504A (zh) 电容性微加工换能器和制造所述电容性微加工换能器的方法
EP2866128A3 (en) Touch panel
MX2016006195A (es) Acristalamiento que comprende un sustrato recubierto con una pila que comprende una capa funcional formada de plata y una capa inferior de bloqueo grueso formada de tiox.
WO2015069894A3 (en) Method for depositing metal layers on germanium-containing films using metal chloride precursors
TW200732509A (en) Method of forming a metal layer over a patterned dielectric by wet chemical deposition including an electroless and a powered phase