MX2014008859A - Transductor micro-mecanizado capacitivo y metodo para la fabricacion del mismo. - Google Patents
Transductor micro-mecanizado capacitivo y metodo para la fabricacion del mismo.Info
- Publication number
- MX2014008859A MX2014008859A MX2014008859A MX2014008859A MX2014008859A MX 2014008859 A MX2014008859 A MX 2014008859A MX 2014008859 A MX2014008859 A MX 2014008859A MX 2014008859 A MX2014008859 A MX 2014008859A MX 2014008859 A MX2014008859 A MX 2014008859A
- Authority
- MX
- Mexico
- Prior art keywords
- layer
- electrode
- dielectric
- dielectric film
- cmut
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 84
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000000151 deposition Methods 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 36
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 20
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- HTXDPTMKBJXEOW-UHFFFAOYSA-N iridium(IV) oxide Inorganic materials O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000010909 process residue Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 239000010410 layer Substances 0.000 description 418
- 239000010408 film Substances 0.000 description 97
- 230000008569 process Effects 0.000 description 27
- 238000009413 insulation Methods 0.000 description 25
- 230000008021 deposition Effects 0.000 description 17
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 11
- 239000002346 layers by function Substances 0.000 description 11
- 239000012528 membrane Substances 0.000 description 9
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 9
- 229920001296 polysiloxane Polymers 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 101100163897 Caenorhabditis elegans asic-2 gene Proteins 0.000 description 3
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 238000002604 ultrasonography Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910000457 iridium oxide Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000037361 pathway Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 241001503987 Clematis vitalba Species 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- OWJUDUZMAXZIOA-UHFFFAOYSA-N dialuminum hafnium(4+) oxygen(2-) Chemical compound [O--].[O--].[O--].[Al+3].[Al+3].[Hf+4] OWJUDUZMAXZIOA-UHFFFAOYSA-N 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/002—Electrostatic motors
- H02N1/006—Electrostatic motors of the gap-closing type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00373—Selective deposition, e.g. printing or microcontact printing
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/06—Influence generators
- H02N1/08—Influence generators with conductive charge carrier, i.e. capacitor machines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Pressure Sensors (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Micromachines (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261591344P | 2012-01-27 | 2012-01-27 | |
| PCT/IB2013/050481 WO2013111040A1 (en) | 2012-01-27 | 2013-01-18 | Capacitive micro-machined transducer and method of manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX2014008859A true MX2014008859A (es) | 2014-10-06 |
Family
ID=47780106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2014008859A MX2014008859A (es) | 2012-01-27 | 2013-01-18 | Transductor micro-mecanizado capacitivo y metodo para la fabricacion del mismo. |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US9231496B2 (enExample) |
| EP (1) | EP2806982B1 (enExample) |
| JP (1) | JP6209537B2 (enExample) |
| CN (1) | CN104066521B (enExample) |
| BR (1) | BR112014018083A8 (enExample) |
| MX (1) | MX2014008859A (enExample) |
| RU (1) | RU2618731C2 (enExample) |
| WO (1) | WO2013111040A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6069798B2 (ja) | 2011-12-20 | 2017-02-01 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | 超音波トランスデューサデバイス及びこれを製造する方法 |
| US9231496B2 (en) * | 2012-01-27 | 2016-01-05 | Koninklijke Philips N.V. | Capacitive micro-machined transducer and method of manufacturing the same |
| CN105592940B (zh) * | 2013-09-24 | 2018-09-25 | 皇家飞利浦有限公司 | Cmut装置制造方法、cmut装置和设备 |
| JP6381195B2 (ja) * | 2013-10-22 | 2018-08-29 | キヤノン株式会社 | 静電容量型トランスデューサ及びその作製方法 |
| JP6932085B2 (ja) | 2015-07-02 | 2021-09-08 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | マルチモード容量性マイクロマシン超音波トランスデューサ並びに関連するデバイス、システム及び方法 |
| CN107799386B (zh) * | 2016-09-06 | 2020-04-28 | 中芯国际集成电路制造(北京)有限公司 | 半导体装置及其制造方法 |
| CN107092880B (zh) * | 2017-04-14 | 2023-06-20 | 杭州士兰微电子股份有限公司 | 超声波指纹传感器及其制造方法 |
| WO2019213388A1 (en) * | 2018-05-03 | 2019-11-07 | Butterfly Network, Inc. | Pressure port for ultrasonic transducer on cmos sensor |
| US12350710B2 (en) | 2018-11-16 | 2025-07-08 | Vermon S.A. | Capacitive micromachined ultrasonic transducer and method of manufacturing the same |
| CN114302774B (zh) * | 2019-08-30 | 2023-05-23 | 维蒙股份公司 | Cmut换能器 |
| US11988640B2 (en) * | 2020-03-11 | 2024-05-21 | Bfly Operations, Inc. | Bottom electrode material stack for micromachined ultrasonic transducer devices |
| CN113873404A (zh) * | 2021-09-29 | 2021-12-31 | 瑞声声学科技(深圳)有限公司 | 一种振膜及其制备方法、mems麦克风 |
| TWI819775B (zh) * | 2021-10-13 | 2023-10-21 | 台亞半導體股份有限公司 | 矽化物電容式微機電結構及其製造方法 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6831394B2 (en) * | 2002-12-11 | 2004-12-14 | General Electric Company | Backing material for micromachined ultrasonic transducer devices |
| US6885056B1 (en) | 2003-10-22 | 2005-04-26 | Newport Fab, Llc | High-k dielectric stack in a MIM capacitor and method for its fabrication |
| KR100577562B1 (ko) * | 2004-02-05 | 2006-05-08 | 삼성전자주식회사 | 핀 트랜지스터 형성방법 및 그에 따른 구조 |
| WO2005120130A1 (ja) * | 2004-06-03 | 2005-12-15 | Olympus Corporation | 静電容量型超音波振動子とその製造方法、静電容量型超音波プローブ |
| JP4746291B2 (ja) * | 2004-08-05 | 2011-08-10 | オリンパス株式会社 | 静電容量型超音波振動子、及びその製造方法 |
| US7172947B2 (en) * | 2004-08-31 | 2007-02-06 | Micron Technology, Inc | High dielectric constant transition metal oxide materials |
| JP4371092B2 (ja) * | 2004-12-14 | 2009-11-25 | セイコーエプソン株式会社 | 静電アクチュエータ、液滴吐出ヘッド及びその製造方法、液滴吐出装置並びにデバイス |
| US7037746B1 (en) * | 2004-12-27 | 2006-05-02 | General Electric Company | Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane |
| ITRM20050093A1 (it) | 2005-03-04 | 2006-09-05 | Consiglio Nazionale Ricerche | Procedimento micromeccanico superficiale di fabbricazione di trasduttori ultracustici capacitivi microlavorati e relativo trasduttore ultracustico capacitivo microlavorato. |
| JP4724505B2 (ja) * | 2005-09-09 | 2011-07-13 | 株式会社日立製作所 | 超音波探触子およびその製造方法 |
| WO2008039845A2 (en) * | 2006-09-26 | 2008-04-03 | Applied Materials, Inc. | Fluorine plasma treatment of high-k gate stack for defect passivation |
| US8736000B1 (en) * | 2006-10-19 | 2014-05-27 | Sandia Corporation | Capacitive chemical sensor |
| JP4961260B2 (ja) | 2007-05-16 | 2012-06-27 | 株式会社日立製作所 | 半導体装置 |
| CN101772383B (zh) * | 2007-07-31 | 2011-11-02 | 皇家飞利浦电子股份有限公司 | 具有高k电介质的cmut |
| WO2009037655A2 (en) | 2007-09-17 | 2009-03-26 | Koninklijke Philips Electronics, N.V. | Production of pre-collapsed capacitive micro-machined ultrasonic transducers and applications thereof |
| JP5408937B2 (ja) * | 2007-09-25 | 2014-02-05 | キヤノン株式会社 | 電気機械変換素子及びその製造方法 |
| US8008842B2 (en) * | 2007-10-26 | 2011-08-30 | Trs Technologies, Inc. | Micromachined piezoelectric ultrasound transducer arrays |
| JP5833312B2 (ja) * | 2007-12-14 | 2015-12-16 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | 輪郭成形基板を含む崩壊モードで動作可能なｃＭＵＴ |
| JP5305993B2 (ja) * | 2008-05-02 | 2013-10-02 | キヤノン株式会社 | 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子 |
| US9132693B2 (en) * | 2008-09-16 | 2015-09-15 | Koninklijke Philps N.V. | Capacitive micromachine ultrasound transducer |
| FR2939003B1 (fr) * | 2008-11-21 | 2011-02-25 | Commissariat Energie Atomique | Cellule cmut formee d'une membrane de nano-tubes ou de nano-fils ou de nano-poutres et dispositif d'imagerie acoustique ultra haute frequence comprenant une pluralite de telles cellules |
| JP5547418B2 (ja) * | 2009-03-19 | 2014-07-16 | 株式会社Ａｄｅｋａ | 化学気相成長用原料及びこれを用いたシリコン含有薄膜形成方法 |
| US20110065276A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| US8188786B2 (en) * | 2009-09-24 | 2012-05-29 | International Business Machines Corporation | Modularized three-dimensional capacitor array |
| US9202895B2 (en) * | 2010-05-07 | 2015-12-01 | Japan Science And Technology Agency | Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric inkjet head |
| US8794075B2 (en) * | 2011-08-11 | 2014-08-05 | Nxp, B.V. | Multilayered NONON membrane in a MEMS sensor |
| US9368603B2 (en) * | 2011-09-15 | 2016-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact for high-k metal gate device |
| US20130187236A1 (en) * | 2012-01-20 | 2013-07-25 | Globalfoundries Inc. | Methods of Forming Replacement Gate Structures for Semiconductor Devices |
| US9231496B2 (en) * | 2012-01-27 | 2016-01-05 | Koninklijke Philips N.V. | Capacitive micro-machined transducer and method of manufacturing the same |
| US20130270647A1 (en) * | 2012-04-17 | 2013-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for nfet with high k metal gate |
| US8846468B2 (en) * | 2012-12-17 | 2014-09-30 | Intermolecular, Inc. | Methods to improve leakage of high K materials |
-
2013
- 2013-01-18 US US14/369,341 patent/US9231496B2/en active Active
- 2013-01-18 WO PCT/IB2013/050481 patent/WO2013111040A1/en not_active Ceased
- 2013-01-18 RU RU2014134810A patent/RU2618731C2/ru not_active IP Right Cessation
- 2013-01-18 MX MX2014008859A patent/MX2014008859A/es unknown
- 2013-01-18 CN CN201380006576.2A patent/CN104066521B/zh active Active
- 2013-01-18 EP EP13707213.8A patent/EP2806982B1/en active Active
- 2013-01-18 BR BR112014018083A patent/BR112014018083A8/pt not_active IP Right Cessation
- 2013-01-18 JP JP2014553833A patent/JP6209537B2/ja active Active
-
2015
- 2015-02-18 US US14/624,945 patent/US10008958B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| BR112014018083A8 (pt) | 2017-07-11 |
| EP2806982B1 (en) | 2020-03-11 |
| RU2618731C2 (ru) | 2017-05-11 |
| JP2015508625A (ja) | 2015-03-19 |
| RU2014134810A (ru) | 2016-03-20 |
| CN104066521A (zh) | 2014-09-24 |
| WO2013111040A1 (en) | 2013-08-01 |
| CN104066521B (zh) | 2017-07-11 |
| BR112014018083A2 (enExample) | 2017-06-20 |
| EP2806982A1 (en) | 2014-12-03 |
| US9231496B2 (en) | 2016-01-05 |
| US10008958B2 (en) | 2018-06-26 |
| US20140375168A1 (en) | 2014-12-25 |
| JP6209537B2 (ja) | 2017-10-04 |
| US20150162852A1 (en) | 2015-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| MX2014008859A (es) | Transductor micro-mecanizado capacitivo y metodo para la fabricacion del mismo. | |
| EP2806983B1 (en) | Capacitive micro-machined transducer and method of manufacturing the same | |
| CN104812504B (zh) | 电容性微加工换能器和制造所述电容性微加工换能器的方法 | |
| US8426235B2 (en) | Method for manufacturing capacitive electromechanical transducer | |
| US9510069B2 (en) | Electromechanical transducer and method of producing the same | |
| EP2274108B1 (en) | Methods of manufacturing a capacitive electromechanical transducer | |
| CN106575673A (zh) | 密封腔体中的独立式和非独立式的基于金属和金属合金的mems结构的晶片级单片cmos集成及其形成方法 | |
| US9214622B2 (en) | Size-controllable opening and method of making same | |
| EP2938570B1 (en) | Surface charge mitigation layer for mems sensors | |
| US20240381776A1 (en) | Method for manufacturing semiconductor structure and semiconductor structure thereof | |
| Maier | Flexoelectricity in PVDF and TiOx thin films: material characterization for MEMS applications |