BR112014018083A8 - Método para a fabricação de um transdutor capacitivo micro-usinado, em particular um cmut e transdutor capacitivo micro-usinado, em particular um cmut - Google Patents
Método para a fabricação de um transdutor capacitivo micro-usinado, em particular um cmut e transdutor capacitivo micro-usinado, em particular um cmutInfo
- Publication number
- BR112014018083A8 BR112014018083A8 BR112014018083A BR112014018083A BR112014018083A8 BR 112014018083 A8 BR112014018083 A8 BR 112014018083A8 BR 112014018083 A BR112014018083 A BR 112014018083A BR 112014018083 A BR112014018083 A BR 112014018083A BR 112014018083 A8 BR112014018083 A8 BR 112014018083A8
- Authority
- BR
- Brazil
- Prior art keywords
- cmut
- micro
- capacitive transducer
- machining
- layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 5
- 238000005459 micromachining Methods 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000151 deposition Methods 0.000 abstract 6
- 238000000231 atomic layer deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/002—Electrostatic motors
- H02N1/006—Electrostatic motors of the gap-closing type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00373—Selective deposition, e.g. printing or microcontact printing
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/06—Influence generators
- H02N1/08—Influence generators with conductive charge carrier, i.e. capacitor machines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Pressure Sensors (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Micromachines (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261591344P | 2012-01-27 | 2012-01-27 | |
| PCT/IB2013/050481 WO2013111040A1 (en) | 2012-01-27 | 2013-01-18 | Capacitive micro-machined transducer and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| BR112014018083A2 BR112014018083A2 (enExample) | 2017-06-20 |
| BR112014018083A8 true BR112014018083A8 (pt) | 2017-07-11 |
Family
ID=47780106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR112014018083A BR112014018083A8 (pt) | 2012-01-27 | 2013-01-18 | Método para a fabricação de um transdutor capacitivo micro-usinado, em particular um cmut e transdutor capacitivo micro-usinado, em particular um cmut |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US9231496B2 (enExample) |
| EP (1) | EP2806982B1 (enExample) |
| JP (1) | JP6209537B2 (enExample) |
| CN (1) | CN104066521B (enExample) |
| BR (1) | BR112014018083A8 (enExample) |
| MX (1) | MX2014008859A (enExample) |
| RU (1) | RU2618731C2 (enExample) |
| WO (1) | WO2013111040A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6069798B2 (ja) * | 2011-12-20 | 2017-02-01 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 超音波トランスデューサデバイス及びこれを製造する方法 |
| MX2014008859A (es) * | 2012-01-27 | 2014-10-06 | Koninkl Philips Nv | Transductor micro-mecanizado capacitivo y metodo para la fabricacion del mismo. |
| US10293375B2 (en) * | 2013-09-24 | 2019-05-21 | Koninklijke Philips N.V. | CMUT device manufacturing method, CMUT device and apparatus |
| JP6381195B2 (ja) | 2013-10-22 | 2018-08-29 | キヤノン株式会社 | 静電容量型トランスデューサ及びその作製方法 |
| CN107735032B (zh) | 2015-07-02 | 2021-09-21 | 皇家飞利浦有限公司 | 多模式电容式微加工超声换能器以及相关联的设备、系统和方法 |
| CN107799386B (zh) * | 2016-09-06 | 2020-04-28 | 中芯国际集成电路制造(北京)有限公司 | 半导体装置及其制造方法 |
| CN107092880B (zh) * | 2017-04-14 | 2023-06-20 | 杭州士兰微电子股份有限公司 | 超声波指纹传感器及其制造方法 |
| TW202000137A (zh) * | 2018-05-03 | 2020-01-01 | 美商蝴蝶網路公司 | 互補式金屬氧化物半導體感測器上超音波換能器的壓力口 |
| CN113316486B (zh) | 2018-11-16 | 2022-10-18 | 维蒙股份公司 | 电容式微机械超声换能器及其制造方法 |
| US12427544B2 (en) * | 2019-08-30 | 2025-09-30 | Vermon Sa | CMUT transducer |
| US11988640B2 (en) * | 2020-03-11 | 2024-05-21 | Bfly Operations, Inc. | Bottom electrode material stack for micromachined ultrasonic transducer devices |
| CN113873404A (zh) * | 2021-09-29 | 2021-12-31 | 瑞声声学科技(深圳)有限公司 | 一种振膜及其制备方法、mems麦克风 |
| TWI819775B (zh) * | 2021-10-13 | 2023-10-21 | 台亞半導體股份有限公司 | 矽化物電容式微機電結構及其製造方法 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6831394B2 (en) * | 2002-12-11 | 2004-12-14 | General Electric Company | Backing material for micromachined ultrasonic transducer devices |
| US6885056B1 (en) | 2003-10-22 | 2005-04-26 | Newport Fab, Llc | High-k dielectric stack in a MIM capacitor and method for its fabrication |
| KR100577562B1 (ko) * | 2004-02-05 | 2006-05-08 | 삼성전자주식회사 | 핀 트랜지스터 형성방법 및 그에 따른 구조 |
| WO2005120130A1 (ja) * | 2004-06-03 | 2005-12-15 | Olympus Corporation | 静電容量型超音波振動子とその製造方法、静電容量型超音波プローブ |
| JP4746291B2 (ja) * | 2004-08-05 | 2011-08-10 | オリンパス株式会社 | 静電容量型超音波振動子、及びその製造方法 |
| US7172947B2 (en) * | 2004-08-31 | 2007-02-06 | Micron Technology, Inc | High dielectric constant transition metal oxide materials |
| JP4371092B2 (ja) * | 2004-12-14 | 2009-11-25 | セイコーエプソン株式会社 | 静電アクチュエータ、液滴吐出ヘッド及びその製造方法、液滴吐出装置並びにデバイス |
| US7037746B1 (en) * | 2004-12-27 | 2006-05-02 | General Electric Company | Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane |
| ITRM20050093A1 (it) | 2005-03-04 | 2006-09-05 | Consiglio Nazionale Ricerche | Procedimento micromeccanico superficiale di fabbricazione di trasduttori ultracustici capacitivi microlavorati e relativo trasduttore ultracustico capacitivo microlavorato. |
| JP4724505B2 (ja) * | 2005-09-09 | 2011-07-13 | 株式会社日立製作所 | 超音波探触子およびその製造方法 |
| WO2008039845A2 (en) * | 2006-09-26 | 2008-04-03 | Applied Materials, Inc. | Fluorine plasma treatment of high-k gate stack for defect passivation |
| US8736000B1 (en) * | 2006-10-19 | 2014-05-27 | Sandia Corporation | Capacitive chemical sensor |
| JP4961260B2 (ja) * | 2007-05-16 | 2012-06-27 | 株式会社日立製作所 | 半導体装置 |
| EP2170531A2 (en) * | 2007-07-31 | 2010-04-07 | Koninklijke Philips Electronics N.V. | Cmuts with a high-k dielectric |
| WO2009037655A2 (en) * | 2007-09-17 | 2009-03-26 | Koninklijke Philips Electronics, N.V. | Production of pre-collapsed capacitive micro-machined ultrasonic transducers and applications thereof |
| JP5408937B2 (ja) * | 2007-09-25 | 2014-02-05 | キヤノン株式会社 | 電気機械変換素子及びその製造方法 |
| US8008842B2 (en) * | 2007-10-26 | 2011-08-30 | Trs Technologies, Inc. | Micromachined piezoelectric ultrasound transducer arrays |
| WO2009077961A2 (en) * | 2007-12-14 | 2009-06-25 | Koninklijke Philips Electronics, N.V. | Collapsed mode operable cmut including contoured substrate |
| JP5305993B2 (ja) * | 2008-05-02 | 2013-10-02 | キヤノン株式会社 | 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子 |
| EP2326432A2 (en) * | 2008-09-16 | 2011-06-01 | Koninklijke Philips Electronics N.V. | Capacitive micromachined ultrasound transducer |
| FR2939003B1 (fr) * | 2008-11-21 | 2011-02-25 | Commissariat Energie Atomique | Cellule cmut formee d'une membrane de nano-tubes ou de nano-fils ou de nano-poutres et dispositif d'imagerie acoustique ultra haute frequence comprenant une pluralite de telles cellules |
| JP5547418B2 (ja) * | 2009-03-19 | 2014-07-16 | 株式会社Adeka | 化学気相成長用原料及びこれを用いたシリコン含有薄膜形成方法 |
| US20110065276A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| US8188786B2 (en) * | 2009-09-24 | 2012-05-29 | International Business Machines Corporation | Modularized three-dimensional capacitor array |
| CN102870245B (zh) * | 2010-05-07 | 2015-07-29 | 独立行政法人科学技术振兴机构 | 功能设备的制造方法、场效应晶体管和薄膜晶体管 |
| US8794075B2 (en) * | 2011-08-11 | 2014-08-05 | Nxp, B.V. | Multilayered NONON membrane in a MEMS sensor |
| US9368603B2 (en) * | 2011-09-15 | 2016-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact for high-k metal gate device |
| US20130187236A1 (en) * | 2012-01-20 | 2013-07-25 | Globalfoundries Inc. | Methods of Forming Replacement Gate Structures for Semiconductor Devices |
| MX2014008859A (es) * | 2012-01-27 | 2014-10-06 | Koninkl Philips Nv | Transductor micro-mecanizado capacitivo y metodo para la fabricacion del mismo. |
| US20130270647A1 (en) * | 2012-04-17 | 2013-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for nfet with high k metal gate |
| US8846468B2 (en) * | 2012-12-17 | 2014-09-30 | Intermolecular, Inc. | Methods to improve leakage of high K materials |
-
2013
- 2013-01-18 MX MX2014008859A patent/MX2014008859A/es unknown
- 2013-01-18 JP JP2014553833A patent/JP6209537B2/ja active Active
- 2013-01-18 US US14/369,341 patent/US9231496B2/en active Active
- 2013-01-18 RU RU2014134810A patent/RU2618731C2/ru not_active IP Right Cessation
- 2013-01-18 BR BR112014018083A patent/BR112014018083A8/pt not_active IP Right Cessation
- 2013-01-18 WO PCT/IB2013/050481 patent/WO2013111040A1/en not_active Ceased
- 2013-01-18 CN CN201380006576.2A patent/CN104066521B/zh active Active
- 2013-01-18 EP EP13707213.8A patent/EP2806982B1/en active Active
-
2015
- 2015-02-18 US US14/624,945 patent/US10008958B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015508625A (ja) | 2015-03-19 |
| US10008958B2 (en) | 2018-06-26 |
| WO2013111040A1 (en) | 2013-08-01 |
| MX2014008859A (es) | 2014-10-06 |
| US20150162852A1 (en) | 2015-06-11 |
| CN104066521A (zh) | 2014-09-24 |
| CN104066521B (zh) | 2017-07-11 |
| US9231496B2 (en) | 2016-01-05 |
| JP6209537B2 (ja) | 2017-10-04 |
| RU2014134810A (ru) | 2016-03-20 |
| EP2806982A1 (en) | 2014-12-03 |
| US20140375168A1 (en) | 2014-12-25 |
| RU2618731C2 (ru) | 2017-05-11 |
| BR112014018083A2 (enExample) | 2017-06-20 |
| EP2806982B1 (en) | 2020-03-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
| B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] |
Free format text: REFERENTE A 7A ANUIDADE. |
|
| B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2549 DE 12-11-2019 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |