JP2011228462A5 - - Google Patents

Download PDF

Info

Publication number
JP2011228462A5
JP2011228462A5 JP2010096521A JP2010096521A JP2011228462A5 JP 2011228462 A5 JP2011228462 A5 JP 2011228462A5 JP 2010096521 A JP2010096521 A JP 2010096521A JP 2010096521 A JP2010096521 A JP 2010096521A JP 2011228462 A5 JP2011228462 A5 JP 2011228462A5
Authority
JP
Japan
Prior art keywords
thin film
film capacitor
layer
nitride
capacitor according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2010096521A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011228462A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010096521A priority Critical patent/JP2011228462A/ja
Priority claimed from JP2010096521A external-priority patent/JP2011228462A/ja
Priority to US13/642,004 priority patent/US20130094120A1/en
Priority to PCT/JP2011/057100 priority patent/WO2011132492A1/ja
Publication of JP2011228462A publication Critical patent/JP2011228462A/ja
Publication of JP2011228462A5 publication Critical patent/JP2011228462A5/ja
Withdrawn legal-status Critical Current

Links

JP2010096521A 2010-04-19 2010-04-19 薄膜キャパシタ Withdrawn JP2011228462A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010096521A JP2011228462A (ja) 2010-04-19 2010-04-19 薄膜キャパシタ
US13/642,004 US20130094120A1 (en) 2010-04-19 2011-03-24 Thin-film capacitor
PCT/JP2011/057100 WO2011132492A1 (ja) 2010-04-19 2011-03-24 薄膜キャパシタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010096521A JP2011228462A (ja) 2010-04-19 2010-04-19 薄膜キャパシタ

Publications (2)

Publication Number Publication Date
JP2011228462A JP2011228462A (ja) 2011-11-10
JP2011228462A5 true JP2011228462A5 (enExample) 2012-08-30

Family

ID=44834028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010096521A Withdrawn JP2011228462A (ja) 2010-04-19 2010-04-19 薄膜キャパシタ

Country Status (3)

Country Link
US (1) US20130094120A1 (enExample)
JP (1) JP2011228462A (enExample)
WO (1) WO2011132492A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015133424A (ja) * 2014-01-14 2015-07-23 住友電工デバイス・イノベーション株式会社 電子部品の製造方法
JP6736892B2 (ja) 2015-01-26 2020-08-05 Tdk株式会社 薄膜キャパシタ
JP6736891B2 (ja) 2015-01-26 2020-08-05 Tdk株式会社 薄膜キャパシタ
US11038010B2 (en) * 2015-01-29 2021-06-15 Taiwan Semiconductor Manufacturing Company Limited Capacitor structure and method of making the same
KR101792381B1 (ko) * 2016-01-04 2017-11-01 삼성전기주식회사 전자부품 및 그 제조방법
KR102762892B1 (ko) * 2016-12-15 2025-02-07 삼성전기주식회사 박막 커패시터
CN110800098B (zh) 2017-07-31 2023-09-22 株式会社村田制作所 薄膜电容器及其制造方法
CN108123039B (zh) * 2017-12-15 2020-08-28 南京溧水高新创业投资管理有限公司 Mim电容器及其制作方法
WO2025052736A1 (ja) * 2023-09-04 2025-03-13 ソニーセミコンダクタソリューションズ株式会社 光検出素子

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2955112B2 (ja) * 1992-03-13 1999-10-04 シャープ株式会社 光磁気記憶媒体
JP3542704B2 (ja) * 1997-10-24 2004-07-14 シャープ株式会社 半導体メモリ素子
JP2001144032A (ja) * 1999-11-17 2001-05-25 Tokyo Electron Ltd ＴｉＳｉＮ薄膜およびその成膜方法、半導体装置およびその製造方法、ならびにＴｉＳｉＮ薄膜の成膜装置
US6320244B1 (en) * 1999-01-12 2001-11-20 Agere Systems Guardian Corp. Integrated circuit device having dual damascene capacitor
US6278147B1 (en) * 2000-01-18 2001-08-21 International Business Machines Corporation On-chip decoupling capacitor with bottom hardmask
JP2002246558A (ja) * 2001-02-20 2002-08-30 Sony Corp 半導体装置の製造方法
JP2003060054A (ja) * 2001-08-10 2003-02-28 Rohm Co Ltd 強誘電体キャパシタを有する半導体装置
JP2003174092A (ja) * 2001-12-04 2003-06-20 Toshiba Corp 半導体装置及びその製造方法
KR100480641B1 (ko) * 2002-10-17 2005-03-31 삼성전자주식회사 고 커패시턴스를 지니는 금속-절연체-금속 커패시터, 이를구비하는 집적회로 칩 및 이의 제조 방법
JP2004303994A (ja) * 2003-03-31 2004-10-28 Seiko Epson Corp 強誘電体メモリ素子およびその製造方法
JP4475919B2 (ja) * 2003-11-06 2010-06-09 富士通株式会社 デカップリングキャパシタ及びその製造方法
JP4997757B2 (ja) * 2005-12-20 2012-08-08 富士通株式会社 薄膜キャパシタ及びその製造方法、電子装置並びに回路基板
JP4586732B2 (ja) * 2006-01-06 2010-11-24 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
KR100924879B1 (ko) * 2007-12-24 2009-11-02 주식회사 동부하이텍 Ｍｉｍ 구조 커패시터 제조방법
WO2009090979A1 (ja) * 2008-01-18 2009-07-23 Tokyo Electron Limited キャパシタ、半導体装置、およびこれらの作製方法

Similar Documents

Publication Publication Date Title
JP2011228462A5 (enExample)
WO2012100133A3 (en) Electrode compositions for use with analyte sensors
MX2014008572A (es) Substrato proporcionado con una pila que tiene propiedades termicas y que comprende cuatro peliculas de metal funcionales.
JP2010134466A5 (ja) 液晶表示装置の作製方法
CA2864844C (en) Coating with conductive and corrosion resistance characteristics
JP2012098628A5 (enExample)
JP2015529934A5 (enExample)
JP2010198007A5 (enExample)
JP2013080887A5 (enExample)
JP2014096359A5 (ja) 電極材料
JP2011100990A5 (ja) 半導体装置
JP2013080886A5 (enExample)
JP2010258482A5 (enExample)
WO2010002516A3 (en) Low-cost double structure substrates and methods for their manufacture
JP2015025196A5 (enExample)
EP2423949A3 (en) Multi-layer via-less thin film resistor and manufacturing method therefor
WO2007117998A3 (en) Capacitor electrodes produced with atomic layer deposition for use in implantable medical devices
WO2011030049A3 (fr) Materiau et vitrage comprenant ce materiau
JP2014131025A5 (enExample)
TW201613106A (en) Semiconductor device and method for manufacturing the semiconductor device
JP2011100877A5 (enExample)
MX374442B (es) Sustrato que tiene una multicapa con propiedades termicas y una capa de absorcion.
EP2533280A3 (en) Semiconductor device
JP2017503880A5 (enExample)
JP2011222805A5 (enExample)