JP2011228462A - 薄膜キャパシタ - Google Patents

薄膜キャパシタ Download PDF

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Publication number
JP2011228462A
JP2011228462A JP2010096521A JP2010096521A JP2011228462A JP 2011228462 A JP2011228462 A JP 2011228462A JP 2010096521 A JP2010096521 A JP 2010096521A JP 2010096521 A JP2010096521 A JP 2010096521A JP 2011228462 A JP2011228462 A JP 2011228462A
Authority
JP
Japan
Prior art keywords
nitride
electrode
thin film
upper electrode
film capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2010096521A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011228462A5 (enExample
Inventor
Yuichi Sasajima
裕一 笹島
Ichiro Hayakawa
一郎 早川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP2010096521A priority Critical patent/JP2011228462A/ja
Priority to US13/642,004 priority patent/US20130094120A1/en
Priority to PCT/JP2011/057100 priority patent/WO2011132492A1/ja
Publication of JP2011228462A publication Critical patent/JP2011228462A/ja
Publication of JP2011228462A5 publication Critical patent/JP2011228462A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2010096521A 2010-04-19 2010-04-19 薄膜キャパシタ Withdrawn JP2011228462A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010096521A JP2011228462A (ja) 2010-04-19 2010-04-19 薄膜キャパシタ
US13/642,004 US20130094120A1 (en) 2010-04-19 2011-03-24 Thin-film capacitor
PCT/JP2011/057100 WO2011132492A1 (ja) 2010-04-19 2011-03-24 薄膜キャパシタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010096521A JP2011228462A (ja) 2010-04-19 2010-04-19 薄膜キャパシタ

Publications (2)

Publication Number Publication Date
JP2011228462A true JP2011228462A (ja) 2011-11-10
JP2011228462A5 JP2011228462A5 (enExample) 2012-08-30

Family

ID=44834028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010096521A Withdrawn JP2011228462A (ja) 2010-04-19 2010-04-19 薄膜キャパシタ

Country Status (3)

Country Link
US (1) US20130094120A1 (enExample)
JP (1) JP2011228462A (enExample)
WO (1) WO2011132492A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9818548B2 (en) 2015-01-26 2017-11-14 Tdk Corporation Thin film capacitor
US9837211B2 (en) 2015-01-26 2017-12-05 Tdk Corporation Thin film capacitor
US11476055B2 (en) 2017-07-31 2022-10-18 Murata Manufacturing Co., Ltd. Thin film capacitor and method of manufacturing the same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015133424A (ja) * 2014-01-14 2015-07-23 住友電工デバイス・イノベーション株式会社 電子部品の製造方法
US11038010B2 (en) * 2015-01-29 2021-06-15 Taiwan Semiconductor Manufacturing Company Limited Capacitor structure and method of making the same
KR101792381B1 (ko) * 2016-01-04 2017-11-01 삼성전기주식회사 전자부품 및 그 제조방법
KR102762892B1 (ko) * 2016-12-15 2025-02-07 삼성전기주식회사 박막 커패시터
CN108123039B (zh) * 2017-12-15 2020-08-28 南京溧水高新创业投资管理有限公司 Mim电容器及其制作方法
WO2025052736A1 (ja) * 2023-09-04 2025-03-13 ソニーセミコンダクタソリューションズ株式会社 光検出素子

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11126883A (ja) * 1997-10-24 1999-05-11 Sharp Corp 半導体メモリ素子
JP2001144032A (ja) * 1999-11-17 2001-05-25 Tokyo Electron Ltd ＴｉＳｉＮ薄膜およびその成膜方法、半導体装置およびその製造方法、ならびにＴｉＳｉＮ薄膜の成膜装置
JP2002246558A (ja) * 2001-02-20 2002-08-30 Sony Corp 半導体装置の製造方法
JP2003174092A (ja) * 2001-12-04 2003-06-20 Toshiba Corp 半導体装置及びその製造方法
JP2004303994A (ja) * 2003-03-31 2004-10-28 Seiko Epson Corp 強誘電体メモリ素子およびその製造方法
JP2005142322A (ja) * 2003-11-06 2005-06-02 Fujitsu Ltd キャパシタ及びその製造方法、並びに半導体装置及びその製造方法
WO2009090979A1 (ja) * 2008-01-18 2009-07-23 Tokyo Electron Limited キャパシタ、半導体装置、およびこれらの作製方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2955112B2 (ja) * 1992-03-13 1999-10-04 シャープ株式会社 光磁気記憶媒体
US6320244B1 (en) * 1999-01-12 2001-11-20 Agere Systems Guardian Corp. Integrated circuit device having dual damascene capacitor
US6278147B1 (en) * 2000-01-18 2001-08-21 International Business Machines Corporation On-chip decoupling capacitor with bottom hardmask
JP2003060054A (ja) * 2001-08-10 2003-02-28 Rohm Co Ltd 強誘電体キャパシタを有する半導体装置
KR100480641B1 (ko) * 2002-10-17 2005-03-31 삼성전자주식회사 고 커패시턴스를 지니는 금속-절연체-금속 커패시터, 이를구비하는 집적회로 칩 및 이의 제조 방법
JP4997757B2 (ja) * 2005-12-20 2012-08-08 富士通株式会社 薄膜キャパシタ及びその製造方法、電子装置並びに回路基板
JP4586732B2 (ja) * 2006-01-06 2010-11-24 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
KR100924879B1 (ko) * 2007-12-24 2009-11-02 주식회사 동부하이텍 Ｍｉｍ 구조 커패시터 제조방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11126883A (ja) * 1997-10-24 1999-05-11 Sharp Corp 半導体メモリ素子
JP2001144032A (ja) * 1999-11-17 2001-05-25 Tokyo Electron Ltd ＴｉＳｉＮ薄膜およびその成膜方法、半導体装置およびその製造方法、ならびにＴｉＳｉＮ薄膜の成膜装置
JP2002246558A (ja) * 2001-02-20 2002-08-30 Sony Corp 半導体装置の製造方法
JP2003174092A (ja) * 2001-12-04 2003-06-20 Toshiba Corp 半導体装置及びその製造方法
JP2004303994A (ja) * 2003-03-31 2004-10-28 Seiko Epson Corp 強誘電体メモリ素子およびその製造方法
JP2005142322A (ja) * 2003-11-06 2005-06-02 Fujitsu Ltd キャパシタ及びその製造方法、並びに半導体装置及びその製造方法
WO2009090979A1 (ja) * 2008-01-18 2009-07-23 Tokyo Electron Limited キャパシタ、半導体装置、およびこれらの作製方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9818548B2 (en) 2015-01-26 2017-11-14 Tdk Corporation Thin film capacitor
US9837211B2 (en) 2015-01-26 2017-12-05 Tdk Corporation Thin film capacitor
US11476055B2 (en) 2017-07-31 2022-10-18 Murata Manufacturing Co., Ltd. Thin film capacitor and method of manufacturing the same

Also Published As

Publication number Publication date
WO2011132492A1 (ja) 2011-10-27
US20130094120A1 (en) 2013-04-18

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