CN108123039B - Mim电容器及其制作方法 - Google Patents
Mim电容器及其制作方法 Download PDFInfo
- Publication number
- CN108123039B CN108123039B CN201711353997.9A CN201711353997A CN108123039B CN 108123039 B CN108123039 B CN 108123039B CN 201711353997 A CN201711353997 A CN 201711353997A CN 108123039 B CN108123039 B CN 108123039B
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- CN
- China
- Prior art keywords
- layer
- electrode structure
- titanium nitride
- conductive
- upper electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000003990 capacitor Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000002161 passivation Methods 0.000 claims abstract description 37
- 239000003989 dielectric material Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000000149 penetrating effect Effects 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 196
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 53
- 239000004020 conductor Substances 0.000 claims description 32
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 24
- 229910052721 tungsten Inorganic materials 0.000 claims description 24
- 239000010937 tungsten Substances 0.000 claims description 24
- 239000007772 electrode material Substances 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000000034 method Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711353997.9A CN108123039B (zh) | 2017-12-15 | 2017-12-15 | Mim电容器及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711353997.9A CN108123039B (zh) | 2017-12-15 | 2017-12-15 | Mim电容器及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108123039A CN108123039A (zh) | 2018-06-05 |
CN108123039B true CN108123039B (zh) | 2020-08-28 |
Family
ID=62229156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711353997.9A Expired - Fee Related CN108123039B (zh) | 2017-12-15 | 2017-12-15 | Mim电容器及其制作方法 |
Country Status (1)
Country | Link |
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CN (1) | CN108123039B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112201643B (zh) * | 2019-07-08 | 2023-04-07 | 中芯国际集成电路制造(北京)有限公司 | 一种半导体器件及形成方法 |
CN116322297A (zh) * | 2023-05-17 | 2023-06-23 | 粤芯半导体技术股份有限公司 | Mim电容器制备方法及mim电容器 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030008467A1 (en) * | 2001-07-09 | 2003-01-09 | Chartered Semiconductor Manufacturing Ltd. | Darc layer for MIM process integration |
US20050020025A1 (en) * | 2003-06-20 | 2005-01-27 | Yoshinobu Yusa | Semiconductor device and method of manufacturing the same |
US20070230089A1 (en) * | 2006-03-14 | 2007-10-04 | United Microelectronics Corp. | Capacitor structure and fabricating method thereof |
CN101221990A (zh) * | 2007-01-09 | 2008-07-16 | 罗姆股份有限公司 | 半导体装置及其制造方法 |
US20130094120A1 (en) * | 2010-04-19 | 2013-04-18 | Taiyo Yuden Co., Ltd. | Thin-film capacitor |
US20160163848A1 (en) * | 2013-08-05 | 2016-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | MISFET Device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5406447A (en) * | 1992-01-06 | 1995-04-11 | Nec Corporation | Capacitor used in an integrated circuit and comprising opposing electrodes having barrier metal films in contact with a dielectric film |
JP2004152796A (ja) * | 2002-10-28 | 2004-05-27 | Toshiba Corp | 半導体装置及びその製造方法 |
US8629488B2 (en) * | 2008-04-23 | 2014-01-14 | Semiconductor Components Industries, Llc | Method for manufacturing an energy storage device and structure therefor |
CN104681403A (zh) * | 2013-11-26 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
US9793339B2 (en) * | 2015-01-08 | 2017-10-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing copper contamination in metal-insulator-metal (MIM) capacitors |
-
2017
- 2017-12-15 CN CN201711353997.9A patent/CN108123039B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030008467A1 (en) * | 2001-07-09 | 2003-01-09 | Chartered Semiconductor Manufacturing Ltd. | Darc layer for MIM process integration |
US20050020025A1 (en) * | 2003-06-20 | 2005-01-27 | Yoshinobu Yusa | Semiconductor device and method of manufacturing the same |
US20070230089A1 (en) * | 2006-03-14 | 2007-10-04 | United Microelectronics Corp. | Capacitor structure and fabricating method thereof |
CN101221990A (zh) * | 2007-01-09 | 2008-07-16 | 罗姆股份有限公司 | 半导体装置及其制造方法 |
US20130094120A1 (en) * | 2010-04-19 | 2013-04-18 | Taiyo Yuden Co., Ltd. | Thin-film capacitor |
US20160163848A1 (en) * | 2013-08-05 | 2016-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | MISFET Device |
Also Published As
Publication number | Publication date |
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CN108123039A (zh) | 2018-06-05 |
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TA01 | Transfer of patent application right | ||
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Effective date of registration: 20200806 Address after: 210000 Kechuang building, Futian Road, Zhetang street, Lishui Economic Development Zone, Nanjing City, Jiangsu Province Applicant after: Nanjing Lishui hi tech Venture Capital Management Co.,Ltd. Address before: 518000 Guangdong city of Shenzhen province Baoan District Fuyong Street Peace community Junfeng Industrial Zone A3 building the first floor Applicant before: SHENZHEN JINGTE SMART MANUFACTURING TECHNOLOGY Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200828 Termination date: 20201215 |