JP2015181229A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2015181229A JP2015181229A JP2015043535A JP2015043535A JP2015181229A JP 2015181229 A JP2015181229 A JP 2015181229A JP 2015043535 A JP2015043535 A JP 2015043535A JP 2015043535 A JP2015043535 A JP 2015043535A JP 2015181229 A JP2015181229 A JP 2015181229A
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- circuit
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- oxide semiconductor
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Images
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
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Abstract
Description
本実施の形態では、半導体装置の回路構成及びその動作について図1乃至図4を用いて説明する。
バッファ回路101は、マイクロコンピュータ等から端子HINに入力される信号(第1の信号)を、レベルシフト回路102を動作可能な信号に昇圧及び/又は電荷供給能力を高めた信号(第2の信号)に変換して第2の信号を出力する機能を有する回路である。第1の信号は、バッファ回路104が有するトランジスタ121及びトランジスタ122を交互に導通するための信号であり、バッファ回路101及びレベルシフト回路102で昇圧された後に、バッファ回路104へ入力される。換言すると、第1の信号は、出力端子HOUTと電気的に接続された高電位側のパワーデバイス(図示せず)の導通又は非導通を制御するための信号であり、該パワーデバイスを導通状態とする”H(高電位)”と、該パワーデバイスを非導通状態とする”L(低電位)”とを有する。
レベルシフト回路102は、バッファ回路101から出力される第2の信号を、パワーデバイスを駆動するための電圧に昇圧された第3の信号に変換する機能を有する回路である。換言すると、第3の信号は、第2の信号のレベル(電位)が高電位側へシフトされた信号である。第2の信号の有する電位は、第1の信号の有する電位よりも大きく、第3の信号の有する電位は、第2の信号の有する電位よりも大きい。
フリップフロップ回路103は、レベルシフト回路102によってレベルシフトされた第3の信号が入力され、第3の信号に応じた第4の信号をバッファ回路104へ出力する機能を有する回路である。フリップフロップ回路103は、セットリセット型のフリップフロップ回路であり、例えばトランジスタ113と電気的に接続された端子に入力される信号によってセットされ、トランジスタ114と電気的に接続された端子に入力される信号によってリセットされる。この場合、例えばトランジスタ113が導通状態であり、トランジスタ114が非導通状態であると、フリップフロップ回路103からは”L(低電位)”が出力され、トランジスタ113が非導通状態であり、トランジスタ114が導通状態であると、フリップフロップ回路103からは”H(高電位)”が出力される。
バッファ回路104は、フリップフロップ回路103の出力した第4の信号に応じた電位を、端子HOUTを介して、パワーデバイス(図示せず)に出力する機能を有する回路である。バッファ回路104は、トランジスタ121とトランジスタ122とを有する。トランジスタ121のゲートと、トランジスタ122のゲートとは、フリップフロップ回路103と電気的に接続されており、フリップフロップ回路103の出力によって導通又は非導通が制御される。また、トランジスタ121のソース又はドレインの一方は、パワーデバイスを駆動するための電圧V1が与えられた配線と電気的に接続されている。トランジスタ121のソース又はドレインの他方は、トランジスタ122のソース又はドレインの一方と電気的に接続されている。そしてトランジスタ122のソース又はドレインの他方は、パワーデバイスを駆動するための電圧V2が与えられた配線と電気的に接続されている。
本実施の形態では、実施の形態1の半導体装置において、レベルシフト回路102に含まれるトランジスタ113又はトランジスタ114として適用可能な酸化物半導体にチャネル形成領域を有するトランジスタの構成例について説明する。
本実施の形態では、本発明の一態様の半導体装置の断面構造の一例を示す。
図5に、本発明の一態様の半導体装置の断面構造の一例を示す。図5では、図1に示す半導体装置100におけるバッファ回路101、フリップフロップ回路103又はバッファ回路104に含まれるトランジスタに対応するトランジスタ610及びトランジスタ620上に、レベルシフト回路102のトランジスタ113又はトランジスタ114に対応するトランジスタ630が形成される半導体装置の構成例を示している。トランジスタ630は、酸化物半導体にチャネルが形成されるトランジスタである。
図6に、図1に示した半導体装置100の断面構造の、他の一例を示す。なお、図6では、バッファ回路101、フリップフロップ回路103又はバッファ回路104に含まれるトランジスタ70と、レベルシフト回路102に含まれるトランジスタ75の断面図を、例示している。具体的に、破線A1−A2で示す領域では、トランジスタ75とトランジスタ70の、チャネル長方向における断面構造を示しており、破線A3−A4で示す領域では、トランジスタ75とトランジスタ70の、チャネル幅方向における構造を示している。ただし、本発明の一態様では、1つのトランジスタのチャネル長方向と、別の一つのトランジスタのチャネル長方向とが、必ずしも一致していなくともよい。
本実施の形態では、上述の実施の形態で説明した半導体装置を電子部品に適用する例、及び該電子部品を具備する電子機器に適用する例について、図10、図11を用いて説明する。
75 トランジスタ
90 トランジスタ
90B トランジスタ
91 絶縁膜
92a 酸化物半導体膜
92b 酸化物半導体膜
92c 酸化物半導体膜
93 導電膜
94 導電膜
95 絶縁膜
96 導電膜
96b 導電膜
97 基板
100 半導体装置
101 バッファ回路
102 レベルシフト回路
103 フリップフロップ回路
104 バッファ回路
105 バッファ回路
107 パルス発生回路
111 抵抗素子
112 抵抗素子
113 トランジスタ
114 トランジスタ
121 トランジスタ
122 トランジスタ
131 トランジスタ
132 トランジスタ
133 トランジスタ
134 トランジスタ
135 トランジスタ
136 トランジスタ
142 インバータ回路
150 半導体装置
160 半導体装置
201 バッファ回路
202 バッファ回路
221 トランジスタ
222 トランジスタ
300 半導体装置
400 基板
401 素子分離領域
402 不純物領域
403 不純物領域
404 チャネル形成領域
405 絶縁膜
406 ゲート電極
411 絶縁膜
412 導電膜
413 導電膜
414 導電膜
416 導電膜
417 導電膜
418 導電膜
420 絶縁膜
421 絶縁膜
422 絶縁膜
430 半導体膜
430a 酸化物半導体膜
430c 酸化物半導体膜
431 ゲート絶縁膜
432 導電膜
433 導電膜
434 ゲート電極
601 半導体基板
610 トランジスタ
602 素子分離領域
611 絶縁膜
612 絶縁膜
613 絶縁膜
614 絶縁膜
615 絶縁膜
620 トランジスタ
625a 導電膜
625b 導電膜
625c 導電膜
625d 導電膜
630 トランジスタ
634a 導電膜
634b 導電膜
634c 導電膜
640 導電膜
642 導電膜
644 導電膜
662 ゲート絶縁膜
700 電子部品
701 半導体膜
702 プリント基板
703 半導体装置
704 実装基板
705 リード
710 領域
711 領域
721 導電膜
722 導電膜
731 ゲート電極
732 絶縁膜
1010 電動自転車
1011 モーター部
1012 バッテリー
1013 駆動回路
1020 電気自動車
1021 モーター部
1022 バッテリー
1023 駆動回路
Claims (6)
- 第1の回路と、第2の回路と、第3の回路と、第4の回路とを有し、
前記第1の回路は、第1の信号を第2の信号へと変換して第2の信号を出力する機能を有し、
前記第2の回路は、前記第2の信号を第3の信号へと変換して第3の信号を出力する機能を有し、
前記第3の回路は、前記第3の信号に応じた第4の信号を出力する機能を有し、
前記第4の回路は、前記第4の信号に応じた第1の電位又は第2の電位を出力する機能を有し、
前記第2の回路は、第1のトランジスタと、第2のトランジスタと、第1の抵抗素子と、第2の抵抗素子とを有し、
前記第1のトランジスタのソース又はドレインの一方は、前記第1の抵抗素子の一方の端子と電気的に接続され、
前記第2のトランジスタのソース又はドレインの一方は、前記第2の抵抗素子の一方の端子と電気的に接続され、
前記第1のトランジスタのチャネルは、酸化物半導体を有し、
前記第2のトランジスタのチャネルは、酸化物半導体を有する半導体装置。 - 第1の回路と、第2の回路と、第3の回路と、第4の回路とを有し、
前記第1の回路は、第1の信号を第2の信号へと変換して第2の信号を出力する機能を有し、
前記第2の回路は、前記第2の信号を第3の信号へと変換して第3の信号を出力する機能を有し、
前記第3の回路は、前記第3の信号に応じた第4の信号を出力する機能を有し、
前記第4の回路は、前記第4の信号に応じた第1の電位又は第2の電位を出力する機能を有し、
前記第2の回路は、第1のトランジスタと、第2のトランジスタと、第1の抵抗素子と、第2の抵抗素子とを有し、
前記第4の回路は、第3のトランジスタと、第4のトランジスタとを有し、
前記第1のトランジスタのソース又はドレインの一方は、前記第1の抵抗素子の一方の端子と電気的に接続され、
前記第2のトランジスタのソース又はドレインの一方は、前記第2の抵抗素子の一方の端子と電気的に接続され、
前記第1の抵抗素子の他方の端子は、第1の配線と電気的に接続され、
前記第2の抵抗素子の他方の端子は、前記第1の配線と電気的に接続され、
前記第3のトランジスタのゲートは、前記第3の回路と電気的に接続され、
前記第3のトランジスタのソース又はドレインの一方は、前記第4のトランジスタのソース又はドレインの一方と電気的に接続され、
前記第3のトランジスタのソース又はドレインの他方は、前記第1の配線と電気的に接続され、
前記第4のトランジスタのゲートは、前記第3の回路と電気的に接続され、
前記第4のトランジスタのソース又はドレインの他方は、第2の配線と電気的に接続され、
前記第1のトランジスタのチャネルは、酸化物半導体を有し、
前記第2のトランジスタのチャネルは、酸化物半導体を有し、
前記第3のトランジスタのチャネルは、シリコンを有し、
前記第4のトランジスタのチャネルは、シリコンを有する半導体装置。 - 請求項2において、
前記第3のトランジスタと、前記第4のトランジスタとの上方に絶縁膜を有し、
前記絶縁膜の上方に、前記第1のトランジスタと、前記第2のトランジスタとを有する半導体装置。 - 請求項1乃至3のいずれか一において、
前記第2の信号は、前記第1の信号が有する電位よりも高い電位を有し、
前記第3の信号は、前記第2の信号が有する電位よりも高い電位を有すること半導体装置。 - 請求項1乃至4のいずれか一において、
第5の回路を有し、
前記第5の回路は、前記第4の信号を、前記第4の信号が有する電位よりも高い電位を有する第5の信号に変換して、前記第4の回路に出力する機能を有する半導体装置。 - 請求項1乃至5のいずれか一において、
前記第1のトランジスタのチャネルは、インジウムと、ガリウムと、亜鉛とを有し、
前記第2のトランジスタのチャネルは、インジウムと、ガリウムと、亜鉛とを有する半導体装置。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022016470A (ja) * | 2015-12-29 | 2022-01-21 | 株式会社半導体エネルギー研究所 | トランジスタ |
JP2022524349A (ja) * | 2019-03-07 | 2022-05-02 | 華為技術有限公司 | チップ、信号レベルシフタ回路、及び電子装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9537478B2 (en) * | 2014-03-06 | 2017-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6830765B2 (ja) | 2015-06-08 | 2021-02-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10355673B2 (en) | 2016-09-29 | 2019-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
JP6817081B2 (ja) * | 2017-01-17 | 2021-01-20 | エイブリック株式会社 | レベルシフト回路 |
JP2018129727A (ja) * | 2017-02-09 | 2018-08-16 | エイブリック株式会社 | レベルシフタ |
CN112805592A (zh) * | 2018-10-11 | 2021-05-14 | 株式会社半导体能源研究所 | 驾驶员报警系统 |
US20220102271A1 (en) * | 2020-09-25 | 2022-03-31 | Intel Corporation | Tunable resistance thin film resistor for integrated circuits |
KR20230048932A (ko) * | 2021-10-05 | 2023-04-12 | 주식회사 엘엑스세미콘 | 레벨 쉬프터, 레벨 쉬프터의 구동 방법, 레벨 쉬프터를 포함하는 게이트 드라이버, 및 게이트 드라이버의 구동 방법 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003101391A (ja) * | 2001-07-19 | 2003-04-04 | Mitsubishi Electric Corp | 半導体装置 |
JP2004120152A (ja) * | 2002-09-25 | 2004-04-15 | Mitsubishi Electric Corp | 駆動回路及び半導体装置 |
JP2004222256A (ja) * | 2002-12-25 | 2004-08-05 | Semiconductor Energy Lab Co Ltd | 半導体装置およびこれを用いた表示装置並びに電子機器 |
US20100244017A1 (en) * | 2009-03-31 | 2010-09-30 | Randy Hoffman | Thin-film transistor (tft) with an extended oxide channel |
JP2011049741A (ja) * | 2009-08-26 | 2011-03-10 | Sharp Corp | 半導体装置および電子機器 |
JP2011124557A (ja) * | 2009-11-13 | 2011-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2011227479A (ja) * | 2010-03-31 | 2011-11-10 | Semiconductor Energy Lab Co Ltd | 半導体表示装置 |
JP2012175437A (ja) * | 2011-02-22 | 2012-09-10 | Rohm Co Ltd | 信号伝達回路及びこれを用いたスイッチ駆動装置 |
Family Cites Families (127)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2007101A (en) | 1935-02-19 | 1935-07-02 | Arthur L Vonderembse | Keyhole illuminator |
US4288862A (en) * | 1977-12-21 | 1981-09-08 | Nippon Telegraph And Telephone Public Corp. | Memory circuit |
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
US4963756A (en) * | 1989-10-13 | 1990-10-16 | Hewlett-Packard Company | Focused line identifier for a bar code reader |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
DE69635107D1 (de) | 1995-08-03 | 2005-09-29 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit einem transparenten schaltungselement |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP3024941B2 (ja) * | 1996-11-26 | 2000-03-27 | 株式会社サワタ建材社 | 天井材取付装置 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP4462776B2 (ja) * | 2001-03-13 | 2010-05-12 | 三菱電機株式会社 | 電力変換装置および信号レベル変換装置 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP4382312B2 (ja) | 2001-09-05 | 2009-12-09 | 三菱電機株式会社 | 駆動制御装置、電力変換装置、電力変換装置の制御方法、および電力変換装置の使用方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4094984B2 (ja) | 2003-04-24 | 2008-06-04 | 三菱電機株式会社 | 半導体装置 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
EP1737044B1 (en) | 2004-03-12 | 2014-12-10 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
AU2005302962B2 (en) | 2004-11-10 | 2009-05-07 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
US7863611B2 (en) * | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
CA2585071A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Field effect transistor employing an amorphous oxide |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7872259B2 (en) | 2004-11-10 | 2011-01-18 | Canon Kabushiki Kaisha | Light-emitting device |
US7199617B1 (en) | 2004-11-12 | 2007-04-03 | Intel Corporation | Level shifter |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI505473B (zh) | 2005-01-28 | 2015-10-21 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI445178B (zh) | 2005-01-28 | 2014-07-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
EP1998375A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101117948B1 (ko) | 2005-11-15 | 2012-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 디스플레이 장치 제조 방법 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
US7443202B2 (en) | 2006-06-02 | 2008-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic apparatus having the same |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
US8274078B2 (en) | 2007-04-25 | 2012-09-25 | Canon Kabushiki Kaisha | Metal oxynitride semiconductor containing zinc |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
US8094505B2 (en) * | 2009-10-09 | 2012-01-10 | Intel Corporation | Method and system to lower the minimum operating voltage of a memory array |
WO2011052366A1 (en) | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Voltage regulator circuit |
CN105353551A (zh) * | 2009-12-28 | 2016-02-24 | 株式会社半导体能源研究所 | 液晶显示装置及电子设备 |
KR101625935B1 (ko) * | 2010-01-05 | 2016-05-31 | 삼성전자주식회사 | 차지 펌프 회로와 이를 포함하는 장치들 |
JP6030334B2 (ja) | 2011-05-20 | 2016-11-24 | 株式会社半導体エネルギー研究所 | 記憶装置 |
TWI580189B (zh) | 2011-12-23 | 2017-04-21 | 半導體能源研究所股份有限公司 | 位準位移電路及半導體積體電路 |
US20140002140A1 (en) * | 2012-06-28 | 2014-01-02 | Yen-Ping Wang | Level shifter capable of pulse filtering and bridge driver using the same |
US8933533B2 (en) * | 2012-07-05 | 2015-01-13 | Infineon Technologies Austria Ag | Solid-state bidirectional switch having a first and a second power-FET |
US8791723B2 (en) * | 2012-08-17 | 2014-07-29 | Alpha And Omega Semiconductor Incorporated | Three-dimensional high voltage gate driver integrated circuit |
US8854104B2 (en) | 2012-12-31 | 2014-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Voltage level shifter |
US9246476B2 (en) * | 2013-05-10 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit |
US20140333598A1 (en) * | 2013-05-10 | 2014-11-13 | Pixtronix, Inc. | Display Apparatus Incorporating Varying Threshold Voltage Transistors |
KR101745753B1 (ko) * | 2013-06-21 | 2017-06-13 | 매그나칩 반도체 유한회사 | 다중 전원용 레벨 시프터 |
US9818765B2 (en) * | 2013-08-26 | 2017-11-14 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
CN105103447B (zh) * | 2013-09-27 | 2017-10-10 | 富士电机株式会社 | 驱动电路以及半导体装置 |
US9537478B2 (en) * | 2014-03-06 | 2017-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2016012893A1 (en) * | 2014-07-25 | 2016-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Oscillator circuit and semiconductor device including the same |
WO2016092416A1 (en) * | 2014-12-11 | 2016-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, and electronic device |
-
2015
- 2015-03-04 US US14/638,377 patent/US9537478B2/en active Active
- 2015-03-05 JP JP2015043535A patent/JP2015181229A/ja not_active Withdrawn
-
2016
- 2016-12-27 US US15/391,398 patent/US9818882B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003101391A (ja) * | 2001-07-19 | 2003-04-04 | Mitsubishi Electric Corp | 半導体装置 |
JP2004120152A (ja) * | 2002-09-25 | 2004-04-15 | Mitsubishi Electric Corp | 駆動回路及び半導体装置 |
JP2004222256A (ja) * | 2002-12-25 | 2004-08-05 | Semiconductor Energy Lab Co Ltd | 半導体装置およびこれを用いた表示装置並びに電子機器 |
US20100244017A1 (en) * | 2009-03-31 | 2010-09-30 | Randy Hoffman | Thin-film transistor (tft) with an extended oxide channel |
JP2011049741A (ja) * | 2009-08-26 | 2011-03-10 | Sharp Corp | 半導体装置および電子機器 |
JP2011124557A (ja) * | 2009-11-13 | 2011-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2011227479A (ja) * | 2010-03-31 | 2011-11-10 | Semiconductor Energy Lab Co Ltd | 半導体表示装置 |
JP2012175437A (ja) * | 2011-02-22 | 2012-09-10 | Rohm Co Ltd | 信号伝達回路及びこれを用いたスイッチ駆動装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022016470A (ja) * | 2015-12-29 | 2022-01-21 | 株式会社半導体エネルギー研究所 | トランジスタ |
US11757007B2 (en) | 2015-12-29 | 2023-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Metal oxide film and semiconductor device |
JP7377245B2 (ja) | 2015-12-29 | 2023-11-09 | 株式会社半導体エネルギー研究所 | トランジスタ |
JP2022524349A (ja) * | 2019-03-07 | 2022-05-02 | 華為技術有限公司 | チップ、信号レベルシフタ回路、及び電子装置 |
JP7381596B2 (ja) | 2019-03-07 | 2023-11-15 | 華為技術有限公司 | チップ、信号レベルシフタ回路、及び電子装置 |
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US9818882B2 (en) | 2017-11-14 |
US20150263723A1 (en) | 2015-09-17 |
US20170110585A1 (en) | 2017-04-20 |
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