JP6077927B2 - 記憶装置 - Google Patents
記憶装置 Download PDFInfo
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- JP6077927B2 JP6077927B2 JP2013102028A JP2013102028A JP6077927B2 JP 6077927 B2 JP6077927 B2 JP 6077927B2 JP 2013102028 A JP2013102028 A JP 2013102028A JP 2013102028 A JP2013102028 A JP 2013102028A JP 6077927 B2 JP6077927 B2 JP 6077927B2
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- Prior art keywords
- transistor
- voltage
- oxide
- film
- writing
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Description
本実施の形態では、本発明の一態様に係る記憶装置について、図1乃至図3を用いて説明する。
本実施の形態では、実施の形態1に示す記憶装置100に含まれるトランジスタの断面構造の一例について、図10を用いて説明する。
110 書き込み回路
111 保持容量素子
112 定電流回路
113 オペアンプ
114 第1のトランジスタ
115 AND回路
116 NOR回路
117 第2のトランジスタ
118 第3のトランジスタ
119 バッファ
120 チャージポンプ
121 レギュレータ
150 記憶素子
151 書き込みトランジスタ
152 容量素子
160 記憶素子
161 読み出しトランジスタ
180 記憶素子
181 書き込みトランジスタ
182 容量素子
190 書き込み回路
202 トランジスタ
900 トランジスタ
901 半導体基板
902 素子分離絶縁膜
903 ドレイン領域
904 ゲート絶縁膜
905 ゲート電極
906 層間絶縁膜
907 配線
908 下地絶縁膜
909 酸化物半導体膜
910 ドレイン電極
911 ゲート絶縁膜
912 ゲート電極
913 層間絶縁膜
920 バックゲート電極
Claims (6)
- 第1の回路と、メモリセルと、を有し、
前記第1の回路は、ワード線を選択する電圧を生成する機能を有し、
前記第1の回路は、前記電圧を保持する機能を有する素子と、前記電圧を徐々に降下させる機能を有する第2の回路と、を有することを特徴とする記憶装置。 - 第1の回路と、メモリセルと、を有し、
前記メモリセルは、トランジスタと、容量素子と、を有し、
前記第1の回路は、ワード線を選択する電圧を生成する機能を有し、
前記第1の回路は、前記電圧を保持する機能を有する素子と、前記電圧を徐々に降下させる機能を有する第2の回路と、を有することを特徴とする記憶装置。 - 請求項2において、
前記トランジスタは、チャネル形成領域に酸化物半導体を有することを特徴とする記憶装置。 - 第1の回路と、メモリセルと、を有し、
前記メモリセルは、第1のトランジスタと、第2のトランジスタと、を有し、
前記第1の回路は、ワード線を選択する電圧を生成する機能を有し、
前記第1の回路は、前記電圧を保持する機能を有する素子と、前記電圧を徐々に降下させる機能を有する第2の回路と、を有することを特徴とする記憶装置。 - 請求項4において、
前記第1のトランジスタは、チャネル形成領域に酸化物半導体を有することを特徴とする記憶装置。 - 請求項4または請求項5において、
前記メモリセルは、容量素子を有することを特徴とする記憶装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013102028A JP6077927B2 (ja) | 2012-05-17 | 2013-05-14 | 記憶装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012113102 | 2012-05-17 | ||
JP2012113102 | 2012-05-17 | ||
JP2013102028A JP6077927B2 (ja) | 2012-05-17 | 2013-05-14 | 記憶装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013257933A JP2013257933A (ja) | 2013-12-26 |
JP2013257933A5 JP2013257933A5 (ja) | 2016-06-23 |
JP6077927B2 true JP6077927B2 (ja) | 2017-02-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013102028A Expired - Fee Related JP6077927B2 (ja) | 2012-05-17 | 2013-05-14 | 記憶装置 |
Country Status (2)
Country | Link |
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US (1) | US8929128B2 (ja) |
JP (1) | JP6077927B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9607991B2 (en) | 2013-09-05 | 2017-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9887212B2 (en) * | 2014-03-14 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
WO2015182000A1 (en) | 2014-05-30 | 2015-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
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2013
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US20130308372A1 (en) | 2013-11-21 |
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