JP2015149650A - ミリ波帯用半導体パッケージおよびミリ波帯用半導体装置 - Google Patents
ミリ波帯用半導体パッケージおよびミリ波帯用半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 239000002184 metal Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 27
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 abstract 5
- 239000010949 copper Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000005404 monopole Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- H01L2924/151—Die mounting substrate
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- H01L2924/1903—Structure including wave guides
Abstract
【解決手段】実施形態に係るミリ波帯用半導体パッケージは、金属製の基体、回路基板、および金属製の蓋体、を具備する。前記基体は、第1の貫通孔および第2の貫通孔を有する。前記回路基板は、前記基体上に配置されており、表面には、入力用信号線路および出力用信号線路が設けられている。前記蓋体は、前記回路基板上に配置されており、第1の非貫通穴および第2の非貫通穴を有する。この蓋体は、前記第1の非貫通穴が前記基体の前記第1の貫通孔の直上に配置されるとともに、前記第2の非貫通穴が前記基体の前記第2の貫通孔の直上に配置されるように前記回路基板上に配置される。そして、前記第1の非貫通穴および前記第1の貫通孔は第1の導波管を構成するとともに、前記第2の非貫通穴および前記第2の貫通孔は第2の導波管を構成する。
【選択図】図6
Description
11・・・半導体チップ
12・・・導波管
12a・・・第1の導波管
12b・・・第2の導波管
13・・・ワイヤー
14・・・ネジ孔
15・・・チップマウントプレート
16・・・チップカバー体
20・・・ミリ波帯用半導体パッケージ
21・・・基体
21a・・・基体の表面
21b・・・基体の第1の側面
21c・・・基体の第2の側面
22・・・信号線路
22a・・・入力用信号線路
22b・・・出力用信号線路
23・・・回路基板
24・・・蓋体
25・・・誘電体基板
26・・・第1の貫通孔
27・・・第2の貫通孔
28・・・貫通孔
29・・・バイアス供給線路
30・・・第1の接地パターン
31・・・表面導波領域
32・・・第2の接地パターン
33・・・裏面導波領域
34・・・リング状の領域
35・・・第1の非貫通穴
36・・・第2の非貫通穴
37・・・第1の凹部
38・・・第2の凹部
Claims (10)
- 第1の貫通孔および第2の貫通孔を有する金属製の基体と、
この基体上に配置され、表面に入力用信号線路および出力用信号線路が設けられた回路基板と、
この回路基板上に配置され、第1の非貫通穴および第2の非貫通穴を有する金属製の蓋体と、
を具備し、
前記蓋体は、前記第1の非貫通穴が前記基体の前記第1の貫通孔の直上に配置されるとともに、前記第2の非貫通穴が前記基体の前記第2の貫通孔の直上に配置されるように前記回路基板上に配置され、
前記第1の非貫通穴および前記第1の貫通孔は第1の導波管を構成するとともに、前記第2の非貫通穴および前記第2の貫通孔は第2の導波管を構成することを特徴とするミリ波帯用半導体パッケージ。 - 前記基体の前記第1の貫通孔および前記第2の貫通孔はそれぞれ、表面から側面に向かって前記基体を貫通するL字状の貫通孔であることを特徴とする請求項1に記載のミリ波帯用半導体パッケージ。
- 前記基体の前記第1の貫通孔および前記第2の貫通孔はそれぞれ、E面ベンド型の貫通孔であることを特徴とする請求項1または2に記載のミリ波帯用半導体パッケージ。
- 前記入力用信号線路の一方の端部は、前記第1の導波管内にλ/4の長さだけ挿入されるとともに、
前記出力用信号線路の一方の端部は、前記第2の導波管内にλ/4の長さだけ挿入されることを特徴とする請求項1乃至3のいずれかに記載のミリ波帯用半導体パッケージ。 - 前記第1の非貫通孔は、この底面が、前記入力用信号線路から上方にλ/4の長さだけ離間した位置に配置されるように設けられているとともに、
前記第2の非貫通孔は、この底面が、前記出力用信号線路から上方にλ/4の長さだけ離間した位置に配置されるように設けられていることを特徴とする請求項1乃至4のいずれかに記載のミリ波帯用半導体パッケージ。 - 第1の貫通孔および第2の貫通孔を有する金属製の基体と、
この基体上に配置され、一部に貫通孔を有し、表面に入力用信号線路および出力用信号線路が設けられた回路基板と、
この回路基板上に配置され、第1の非貫通穴および第2の非貫通穴を有する金属製の蓋体と、
前記回路基板の貫通孔内に配置されるように前記基体の表面上に載置され、前記入力用信号線路および前記出力用信号線路に電気的に接続された半導体チップと、
を具備し、
前記蓋体は、前記第1の非貫通穴が前記基体の前記第1の貫通孔の直上に配置されるとともに、前記第2の非貫通穴が前記基体の前記第2の貫通孔の直上に配置されるように前記回路基板上に配置され、
前記第1の非貫通穴および前記第1の貫通孔は第1の導波管を構成するとともに、前記第2の非貫通穴および前記第2の貫通孔は第2の導波管を構成することを特徴とするミリ波帯用半導体装置。 - 前記基体の前記第1の貫通孔および前記第2の貫通孔はそれぞれ、表面から側面に向かって前記基体を貫通するL字状の貫通孔であることを特徴とする請求項6に記載のミリ波帯用半導体装置。
- 前記基体の前記第1の貫通孔および前記第2の貫通孔はそれぞれ、E面ベンド型の貫通孔であることを特徴とする請求項6または7に記載のミリ波帯用半導体装置。
- 前記入力用信号線路の一方の端部は、前記第1の導波管内にλ/4の長さだけ挿入されるとともに、
前記出力用信号線路の一方の端部は、前記第2の導波管内にλ/4の長さだけ挿入されることを特徴とする請求項6乃至8のいずれかに記載のミリ波帯用半導体装置。 - 前記第1の非貫通孔は、この底面が、前記入力用信号線路から上方にλ/4の長さだけ離間した位置に配置されるように設けられているとともに、
前記第2の非貫通孔は、この底面が、前記出力用信号線路から上方にλ/4の長さだけ離間した位置に配置されるように設けられていることを特徴とする請求項6乃至9のいずれかに記載のミリ波帯用半導体装置。
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JP2014022066A JP2015149650A (ja) | 2014-02-07 | 2014-02-07 | ミリ波帯用半導体パッケージおよびミリ波帯用半導体装置 |
US14/334,867 US9343793B2 (en) | 2014-02-07 | 2014-07-18 | Millimeter wave bands semiconductor package |
EP14177873.8A EP2911236B1 (en) | 2014-02-07 | 2014-07-21 | Millimeter wave bands semiconductor device |
TW103129717A TWI569379B (zh) | 2014-02-07 | 2014-08-28 | Semiconductor package for semiconductor and millimeter wavelength bands |
KR1020140116105A KR101621621B1 (ko) | 2014-02-07 | 2014-09-02 | 밀리파대용 반도체 패키지 및 밀리파대용 반도체 장치 |
CN201410453175.8A CN104835807A (zh) | 2014-02-07 | 2014-09-05 | 毫米波段用半导体封装件以及毫米波段用半导体装置 |
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EP (1) | EP2911236B1 (ja) |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5235300A (en) * | 1992-03-16 | 1993-08-10 | Trw Inc. | Millimeter module package |
JPH0926457A (ja) * | 1995-07-12 | 1997-01-28 | Mitsubishi Electric Corp | 半導体素子評価装置 |
US6040739A (en) * | 1998-09-02 | 2000-03-21 | Trw Inc. | Waveguide to microstrip backshort with external spring compression |
JP2001267814A (ja) * | 2000-03-15 | 2001-09-28 | Kyocera Corp | 配線基板、並びに配線基板と導波管との接続構造 |
JP2006507740A (ja) * | 2002-11-22 | 2006-03-02 | ユナイテッド モノリシック セミコンダクターズ エスアーエス | ミリメートル周波数でのアプリケーション用パッケージ電子部品 |
JP2011120155A (ja) * | 2009-12-07 | 2011-06-16 | Japan Radio Co Ltd | マイクロストリップ線路−導波管変換器 |
JP2015149420A (ja) * | 2014-02-07 | 2015-08-20 | 株式会社東芝 | ミリ波帯用半導体パッケージおよびミリ波帯用半導体装置 |
Family Cites Families (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3103454A (en) | 1957-10-01 | 1963-09-10 | Paocsssl | |
US4286229A (en) * | 1979-11-26 | 1981-08-25 | The United States Of America As Represented By The Secretary Of The Navy | Waveguide structure for selectively coupling multiple frequency oscillators to an output port |
JPS6286841A (ja) | 1985-10-14 | 1987-04-21 | Mitsubishi Electric Corp | 高周波混成集積回路 |
JPH07221223A (ja) | 1994-02-03 | 1995-08-18 | Mitsubishi Electric Corp | 半導体装置,及び混成集積回路装置 |
US6969635B2 (en) * | 2000-12-07 | 2005-11-29 | Reflectivity, Inc. | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
JPH1065038A (ja) * | 1996-08-22 | 1998-03-06 | Mitsubishi Electric Corp | ミリ波デバイス用パッケージ |
JP3791077B2 (ja) | 1996-12-11 | 2006-06-28 | 三菱電機株式会社 | 高周波気密モジュール |
JP3464118B2 (ja) | 1997-04-25 | 2003-11-05 | 京セラ株式会社 | 高周波用パッケージの接続構造 |
EP0874415B1 (en) | 1997-04-25 | 2006-08-23 | Kyocera Corporation | High-frequency package |
JPH1174396A (ja) * | 1997-08-28 | 1999-03-16 | Kyocera Corp | 高周波用入出力端子ならびに高周波用半導体素子収納用パッケージ |
JP3209183B2 (ja) * | 1998-07-08 | 2001-09-17 | 日本電気株式会社 | 高周波信号用集積回路パッケージ及びその製造方法 |
JP2000151222A (ja) | 1998-11-13 | 2000-05-30 | Nec Corp | 高周波モジュール |
JP3538045B2 (ja) * | 1998-12-09 | 2004-06-14 | 三菱電機株式会社 | Rf回路モジュール |
JP3204241B2 (ja) | 1999-02-19 | 2001-09-04 | 日本電気株式会社 | 導波管接続パッケージ |
JP3346752B2 (ja) * | 1999-11-15 | 2002-11-18 | 日本電気株式会社 | 高周波パッケージ |
US6489679B2 (en) * | 1999-12-06 | 2002-12-03 | Sumitomo Metal (Smi) Electronics Devices Inc. | High-frequency package |
JP3485520B2 (ja) | 2000-03-31 | 2004-01-13 | 日本無線株式会社 | 化合物半導体ベアチップ実装型ミリ波帯モジュール及びその製造方法 |
US6573803B1 (en) * | 2000-10-12 | 2003-06-03 | Tyco Electronics Corp. | Surface-mounted millimeter wave signal source with ridged microstrip to waveguide transition |
US6594479B2 (en) * | 2000-12-28 | 2003-07-15 | Lockheed Martin Corporation | Low cost MMW transceiver packaging |
US6627992B2 (en) * | 2001-05-21 | 2003-09-30 | Xytrans, Inc. | Millimeter wave (MMW) transceiver module with transmitter, receiver and local oscillator frequency multiplier surface mounted chip set |
US6498551B1 (en) * | 2001-08-20 | 2002-12-24 | Xytrans, Inc. | Millimeter wave module (MMW) for microwave monolithic integrated circuit (MMIC) |
JP2003209411A (ja) | 2001-10-30 | 2003-07-25 | Matsushita Electric Ind Co Ltd | 高周波モジュールおよび高周波モジュールの製造方法 |
JP3828438B2 (ja) * | 2002-03-13 | 2006-10-04 | 三菱電機株式会社 | 導波管/マイクロストリップ線路変換器 |
KR100472681B1 (ko) | 2002-10-21 | 2005-03-10 | 한국전자통신연구원 | 도파관 구조의 패키지 및 그 제조 방법 |
JP4278617B2 (ja) * | 2002-11-12 | 2009-06-17 | 富士通株式会社 | 実装構造及び電子装置 |
US7050765B2 (en) * | 2003-01-08 | 2006-05-23 | Xytrans, Inc. | Highly integrated microwave outdoor unit (ODU) |
US6900765B2 (en) * | 2003-07-23 | 2005-05-31 | The Boeing Company | Method and apparatus for forming millimeter wave phased array antenna |
TWI241050B (en) | 2003-11-25 | 2005-10-01 | Chung Shan Inst Of Science | Composite waveguide tube with pre-formed thin metal sheet lining and method for producing the same |
KR20050055204A (ko) | 2003-12-05 | 2005-06-13 | 한국전자통신연구원 | 도파관 연결 장치 |
FR2869725A1 (fr) | 2004-04-29 | 2005-11-04 | Thomson Licensing Sa | Element de transition sans contact entre un guide d'ondes et une ligne mocroruban |
FR2879830B1 (fr) | 2004-12-20 | 2007-03-02 | United Monolithic Semiconduct | Composant electronique miniature pour applications hyperfrequences |
JP4475582B2 (ja) | 2005-02-24 | 2010-06-09 | 三菱電機株式会社 | 多層高周波回路 |
JP4395103B2 (ja) * | 2005-06-06 | 2010-01-06 | 富士通株式会社 | 導波路基板および高周波回路モジュール |
JP4575247B2 (ja) | 2005-07-11 | 2010-11-04 | 株式会社東芝 | 高周波パッケージ装置 |
US7742307B2 (en) * | 2008-01-17 | 2010-06-22 | Raytheon Company | High performance power device |
US8872333B2 (en) | 2008-02-14 | 2014-10-28 | Viasat, Inc. | System and method for integrated waveguide packaging |
US8072065B2 (en) | 2008-02-14 | 2011-12-06 | Viasat, Inc. | System and method for integrated waveguide packaging |
JP5047357B2 (ja) | 2008-05-12 | 2012-10-10 | 三菱電機株式会社 | 高周波収納ケースおよび高周波モジュール |
US8093700B2 (en) * | 2008-12-16 | 2012-01-10 | Freescale Semiconductor, Inc. | Packaging millimeter wave modules |
JP5556072B2 (ja) * | 2009-01-07 | 2014-07-23 | ソニー株式会社 | 半導体装置、その製造方法、ミリ波誘電体内伝送装置 |
KR101200813B1 (ko) | 2009-01-16 | 2012-11-13 | 한양대학교 산학협력단 | 금속 나노 입자를 포함하는 플래시 기억 소자 및 그 제조 방법 |
JP2010238845A (ja) * | 2009-03-31 | 2010-10-21 | Oki Data Corp | 半導体装置の製造方法、半導体装置、及び、半導体複合装置 |
FR2945379B1 (fr) | 2009-05-05 | 2011-07-22 | United Monolithic Semiconductors Sa | Composant miniature hyperfrequences pour montage en surface |
KR101077011B1 (ko) * | 2009-06-09 | 2011-10-26 | 서울대학교산학협력단 | 미세가공 공동 공진기와 그 제조 방법 및 이를 이용한 대역통과 필터와 발진기 |
US8256685B2 (en) * | 2009-06-30 | 2012-09-04 | International Business Machines Corporation | Compact millimeter wave packages with integrated antennas |
KR101256556B1 (ko) * | 2009-09-08 | 2013-04-19 | 한국전자통신연구원 | 밀리미터파 대역 패치 안테나 |
US8169060B2 (en) * | 2010-03-29 | 2012-05-01 | Infineon Technologies Ag | Integrated circuit package assembly including wave guide |
JP5636834B2 (ja) * | 2010-09-10 | 2014-12-10 | 富士通株式会社 | 高周波回路用パッケージ及び高周波回路装置 |
JP5358544B2 (ja) | 2010-09-22 | 2013-12-04 | 日立オートモティブシステムズ株式会社 | 電子制御装置 |
KR101761920B1 (ko) * | 2011-02-16 | 2017-07-26 | 삼성전기주식회사 | 유전체 도파관 안테나 |
US8912634B2 (en) * | 2012-03-29 | 2014-12-16 | International Business Machines Corporation | High frequency transition matching in an electronic package for millimeter wave semiconductor dies |
US9960468B2 (en) * | 2012-09-07 | 2018-05-01 | Remec Broadband Wireless Networks, Llc | Metalized molded plastic components for millimeter wave electronics and method for manufacture |
-
2014
- 2014-02-07 JP JP2014022066A patent/JP2015149650A/ja active Pending
- 2014-07-18 US US14/334,867 patent/US9343793B2/en not_active Expired - Fee Related
- 2014-07-21 EP EP14177873.8A patent/EP2911236B1/en not_active Not-in-force
- 2014-08-28 TW TW103129717A patent/TWI569379B/zh not_active IP Right Cessation
- 2014-09-02 KR KR1020140116105A patent/KR101621621B1/ko not_active IP Right Cessation
- 2014-09-05 CN CN201410453175.8A patent/CN104835807A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5235300A (en) * | 1992-03-16 | 1993-08-10 | Trw Inc. | Millimeter module package |
JPH0926457A (ja) * | 1995-07-12 | 1997-01-28 | Mitsubishi Electric Corp | 半導体素子評価装置 |
US6040739A (en) * | 1998-09-02 | 2000-03-21 | Trw Inc. | Waveguide to microstrip backshort with external spring compression |
JP2001267814A (ja) * | 2000-03-15 | 2001-09-28 | Kyocera Corp | 配線基板、並びに配線基板と導波管との接続構造 |
JP2006507740A (ja) * | 2002-11-22 | 2006-03-02 | ユナイテッド モノリシック セミコンダクターズ エスアーエス | ミリメートル周波数でのアプリケーション用パッケージ電子部品 |
JP2011120155A (ja) * | 2009-12-07 | 2011-06-16 | Japan Radio Co Ltd | マイクロストリップ線路−導波管変換器 |
JP2015149420A (ja) * | 2014-02-07 | 2015-08-20 | 株式会社東芝 | ミリ波帯用半導体パッケージおよびミリ波帯用半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
EP2911236B1 (en) | 2016-11-30 |
US20150229014A1 (en) | 2015-08-13 |
KR20150093573A (ko) | 2015-08-18 |
TW201535619A (zh) | 2015-09-16 |
CN104835807A (zh) | 2015-08-12 |
EP2911236A1 (en) | 2015-08-26 |
TWI569379B (zh) | 2017-02-01 |
KR101621621B1 (ko) | 2016-05-16 |
US9343793B2 (en) | 2016-05-17 |
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