JP2015086359A - 半導体チップ封止用熱硬化性樹脂シート及び半導体パッケージの製造方法 - Google Patents
半導体チップ封止用熱硬化性樹脂シート及び半導体パッケージの製造方法 Download PDFInfo
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- JP2015086359A JP2015086359A JP2014167223A JP2014167223A JP2015086359A JP 2015086359 A JP2015086359 A JP 2015086359A JP 2014167223 A JP2014167223 A JP 2014167223A JP 2014167223 A JP2014167223 A JP 2014167223A JP 2015086359 A JP2015086359 A JP 2015086359A
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- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】 本発明は、活性化エネルギー(Ea)が下記式(1)を満たし、かつ150℃で1時間熱硬化処理した後の熱硬化物のガラス転移温度が125℃以上であり、前記熱硬化物の前記ガラス転移温度以下における熱膨張係数α[ppm/K]及び前記熱硬化物の25℃における貯蔵弾性率E’[GPa]が下記式(2)を満たす半導体チップ封止用熱硬化性樹脂シートに関する。
30≦Ea≦120[kJ/mol] ・・・(1)
10000≦α×E’≦300000[Pa/K] ・・・(2)
【選択図】 図1
Description
30≦Ea≦120[kJ/mol] ・・・(1)
10000≦α×E’≦300000[Pa/K] ・・・(2)
なお、熱硬化物のガラス転移温度は125℃以上であるので、半導体パッケージの通常の使用温度範囲及び熱サイクル信頼性試験の温度範囲(最大125℃)における急激な物性変化を抑制できる。
図1は、実施形態1の樹脂シート11の断面模式図である。なお、樹脂シート11の両面には、ポリエチレンテレフタレート(PET)フィルムなどの支持体が設けられていてもよい。樹脂シート11からの剥離を容易に行うために、支持体には離型処理が施されていてもよい。
なお、活性化エネルギーは実施例に記載の方法で測定できる。
10000≦α×E’≦300000[Pa/K] ・・・(2)
上記式(2)において、αは、150℃で1時間熱硬化処理した後の熱硬化物のガラス転移温度以下における熱膨張係数[ppm/K]である。
上記式(2)において、E’は150℃で1時間熱硬化処理した後の熱硬化物の25℃における貯蔵弾性率[GPa]である。
なお、貯蔵弾性率E’は実施例に記載の方法で測定できる。
なお、熱膨張係数αは実施例に記載の方法で測定できる。
なお、ガラス転移温度は実施例に記載の方法で測定できる。
なお、平均粒子径は、例えば、母集団から任意に抽出される試料を用い、レーザー回折散乱式粒度分布測定装置を用いて測定することにより導き出すことができる。
シリカは通常、比重2.2g/cm3であるので、シリカの含有量(重量%)の好適範囲は例えば以下のとおりである。
すなわち、樹脂シート11中のシリカの含有量は、81重量%以上が好ましく、84重量%以上がより好ましい。樹脂シート11中のシリカの含有量は、94重量%以下が好ましく、91重量%以下がより好ましい。
すなわち、樹脂シート11中のアルミナの含有量は、88重量%以上が好ましく、90重量%以上がより好ましい。樹脂シート11中のアルミナの含有量は、97重量%以下が好ましく、95重量%以下がより好ましい。
例えば、以下の工程を行うことで半導体パッケージを得ることができる。
準備工程では、複数の半導体チップ13をフリップチップ実装する半導体ウェハ12を準備する(図2参照)。通常、半導体チップ13の回路形成面(活性面)には、バンプ13aが形成されている。また、通常、半導体ウェハ12の回路形成面(活性面)には、電極12aが形成されている。半導体チップ13と半導体ウェハ12とは、通常、電気的に接続されている。図2では、半導体チップ13と半導体ウェハ12とは、バンプ13aと電極12aを介して電気的に接続されている例を示している。半導体チップ13の半導体ウェハ12への搭載には、フリップチップボンダーやダイボンダーなどの公知の装置を用いることができる。また、必要に応じて、半導体チップ13と半導体ウェハ12の間にアンダーフィル材14を充填する。
封止工程では、半導体チップ13を樹脂シート11で封止する(図3参照)。これにより、樹脂シート11及び樹脂シート11に埋め込まれた半導体チップ13を備える封止体15(半導体パッケージ15)を得る。半導体チップ13を樹脂シート11で封止する方法としては、例えば、半導体ウェハ12にフリップチップ接続された半導体チップ13上に樹脂シート11を積層した後、半導体ウェハ12、半導体ウェハ12にフリップチップ接続された半導体チップ13及び半導体チップ13上に配置された樹脂シート11を備える積層体を平行平板方式で熱プレスすることにより、樹脂シート11に半導体チップ13を埋め込む方法などが挙げられる。
封止体15の樹脂シート11を熱硬化する。
加熱時間が、好ましくは10分以上、より好ましくは30分以上である。一方、加熱時間の上限が、好ましくは300分以下、より好ましくは180分以下である。また、必要に応じて加圧してもよく、好ましくは0.1MPa以上、より好ましくは0.5MPa以上である。一方、上限は好ましくは10MPa以下、より好ましくは5MPa以下である。
必要に応じて、封止体15の樹脂シート11を研削する(図4参照)。研削方法としては、例えば、高速回転する砥石を用いるグラインディング法などが挙げられる。
必要に応じて、封止体15の半導体ウェハ12を研削する。研削により、ビア(Via)12bを形成できる(図5参照)。研削方法としては、例えば、高速回転する砥石を用いるグラインディング法などが挙げられる。次いで、必要に応じて、封止体15に配線21を有する再配線層22を形成する(図6参照)。次いで、必要に応じて、配線21上にバンプ23を形成する。図6では、ビア12bと配線21とが接続されている例を示している。
必要に応じて、封止体15のダイシングを行う(図7参照)。これにより、チップ状の半導体パッケージ16を得ることができる。
必要に応じて、封止体15又は半導体パッケージ16を基板に実装する。
レーザーマーキングは、封止体15又は半導体パッケージ16に任意のタイミングで行うことができる。例えば、熱硬化前の封止体15にレーザーマーキングを行ってもよく、熱硬化後の封止体15にレーザーマーキングを行ってもよく、半導体パッケージ16にレーザーマーキングを行ってもよい。
例えば、以下の工程を行うことでも半導体パッケージを得ることができる。以下の工程は、Fan−out(ファンアウト)型ウェハレベルパッケージ(WLP)の製造に好適である。
まず、仮固定材41に複数の半導体チップ13を固定する(図8参照)。このとき、必要に応じて、半導体チップ13の回路形成面が仮固定材41と対向するように配置固定する。半導体チップ13の固定には、フリップチップボンダーやダイボンダーなどの公知の装置を用いることができる。
封止工程では、半導体チップ13を樹脂シート11で封止する(図9参照)。これにより、樹脂シート11及び樹脂シート11に埋め込まれた半導体チップ13を備える封止体51を得る。半導体チップ13を樹脂シート11で封止する方法としては、例えば、仮固定材41上に配置された半導体チップ13上に樹脂シート11を積層した後、仮固定材41、仮固定材41上に配置された半導体チップ13及び半導体チップ13上に配置された樹脂シート11を備える積層体を平行平板方式で熱プレスすることにより、樹脂シート11に半導体チップ13を埋め込む方法などが挙げられる。
封止体51を熱硬化する(封止体51の樹脂シート11を熱硬化する)。
次いで、封止体51から仮固定材41を剥離する(図10参照)。剥離方法は特に限定されないが、粘着剤層43の粘着力を低下させた後に剥離することが好ましい。例えば、粘着剤層43が熱剥離性粘着剤層である場合、粘着剤層43を加熱し、粘着剤層43の粘着力を低下させた後に剥離する。
次いで、必要に応じて、封止体51の樹脂シート11を研削する(図11参照)。研削方法としては、例えば、高速回転する砥石を用いるグラインディング法などが挙げられる。
次いで、セミアディティブ法などを利用して、封止体51に再配線52を形成する(図12参照)。図12では、再配線52と半導体チップ13とが接続されている例を示している。
半導体チップ13、樹脂シート11及び再配線52などを備える封止体51のダイシングを行ってもよい(図13参照)。以上により、チップ領域の外側に配線を引き出した半導体パッケージ61得ることができる。なお、ダイシングせずに封止体51をそのまま半導体パッケージとして使用してもよい。
必要に応じて、半導体パッケージ61を基板に実装する。
レーザーマーキングは、封止体51又は半導体パッケージ61に任意のタイミングで行うことができる。例えば、熱硬化前の封止体51にレーザーマーキングを行ってもよく、熱硬化後の封止体51にレーザーマーキングを行ってもよく、半導体パッケージ61にレーザーマーキングを行ってもよい。
エポキシ樹脂A:新日鐵化学(株)製のYSLV−80XY(ビスフェノールF型エポキシ樹脂、エポキン当量200g/eq.軟化点80℃)
エポキシ樹脂B:日本化薬社製のEPPN501−HY(エポキシ当量169g/eq.軟化点60℃)
フェノール樹脂A:明和化成社製のMEH−7851−SS(ビフェニルアラルキル骨格を有するフェノールノボラック樹脂、水酸基当量203g/eq.軟化点67℃)
フェノール樹脂B:明和化成社製のMEH−7500−3S(フェノールノボラック樹脂、水酸基当量103g/eq.軟化点83℃)
硬化促進剤A:四国化成工業社製の2PHZ−PW(2−フェニル−4,5−ジヒドロキシメチルイミダゾール)
硬化促進剤B:北興化学工業社製のTPP−K(テトラフェニルホスホニウムテトラフェニルボレート)
硬化促進剤C:四国化成工業社製の2E4MZ−A(2,4−ジアミノ−6−[2’−エチル−4’−メチルイミダゾリル−(1’)]−エチル−s−トリアジン)
エラストマーA:カネカ社製のSIBSTAR 072T(スチレン−イソブチレン−スチレントリブロック共重合体)
エラストマーB:下記合成例1により得られたアクリル共重合体(ブチルアクリレート:アクリロニトリル:グリシジルメタクリレート=85:8:7重量%からなる共重合体、重量平均分子量80万)
無機充填材A:電気化学工業社製のFB−9454(球状溶融シリカ粉末、平均粒子径20μm)
無機充填材B:アドマテックス社製のSO−25R(球状溶融シリカ粉末、平均粒子径0.5μm)
シランカップリング剤:信越化学社製のKBM−403(3−グリシドキシプロピルトリメトキシシラン)
カーボンブラック:三菱化学社製の#20
ブチルアクリレート、アクリロニトリル、グリシジルメタクリレートを85:8:7の仕込み重量比率にて、2,2’−アゾビスイソブチロニトリルを重合開始剤に用い、メチルエチルケトン中で窒素気流下、70℃で5時間と80℃で1時間のラジカル重合を行うことにより、上記アクリル共重合体を得た。
表1に記載の配合比に従い、各成分をミキサーにてブレンドし、2軸混練機により120℃で2分間溶融混練し、続いてTダイから押出しすることにより、厚さ500μmの樹脂シートを作製した。
得られた樹脂シートを用いて下記の評価を行った。結果を表1に示す。
活性化エネルギーは、Friedman(フリードマン)法を用いて、以下の手順で算出した。
まず、樹脂シートを10mg秤量した。10mgの樹脂シートについて、装置名:Q2000(TA インスツルメンツ社製)を用いて、昇温速度1degC/min、2degC/min、5degC/min及び10degC/minでDSC測定して、DSC曲線を得た。
得られたDSC曲線において、発熱ピークにおける積分値がピーク全体において20%に達する温度をT1、60%に達する温度をT2とし、T1からT2まで昇温するのにかかった時間をdtとして、ln(dα/dt)を算出した(dα=0.6−0.2=0.4)。
得られたln(dα/dt)を各測定条件における1/T2軸でプロットし、各プロットから最小二乗法を用いてグラフ(直線)の傾きを算出した。グラフの傾きがEa/Rとなるので、これを利用してEaを算出した(下記式参照)。
樹脂シートを150℃で1時間熱硬化処理してから、固体粘弾性測定装置(レオメトリックサイエンティック社製:形式:RSA−III)を用いて貯蔵弾性率を測定した。すなわち、サンプルサイズを長さ40mm×幅10mm×厚さ200μmとし、測定試料をフィルム引っ張り測定用治具にセットし−50〜300℃の温度域での引張貯蔵弾性率及び損失弾性率を、周波数1Hz、昇温速度10℃/minの条件下で測定し、25℃での貯蔵弾性率(E’)を読み取ることにより得た。
樹脂シートを150℃で1時間熱硬化処理した後、熱硬化物から、長さ15mm×幅5mm×厚さ200μmの測定試料を切り出した。測定試料を熱機械測定装置(ティーエーインスツルメント社製:形式Q−400EM)のフィルム引張測定用治具にセットした後、−50〜300℃の温度域で、引張荷重2g、昇温速度10℃/minの条件下におき、50℃〜70℃での膨張率から熱膨張係数αを算出した。
樹脂シートを150℃で1時間の加熱処理により熱硬化させ、その後厚さ200μm、長さ40mm(測定長さ)、幅10mmの短冊状にカッターナイフで切り出し、固体粘弾性測定装置(RSAIII、レオメトリックサイエンティフィック(株)製)を用いて、−50〜300℃における貯蔵弾性率及び損失弾性率を測定した。測定条件は、周波数1Hz、昇温速度10℃/minとした。さらに、tanδ(G’’(損失弾性率)/G’(貯蔵弾性率))の値を算出することによりガラス転移温度を得た。
110℃で5時間加熱処理した後の樹脂シートと加熱処理前の樹脂シートについて、装置名:Q2000(TA インスツルメンツ社製)を用いて、DSC測定して、発熱量を求めた(昇温速度10℃/min)。加熱処理後の樹脂シートにおいて発熱ピークが観測されない場合、又は加熱処理後の樹脂シートの発熱量が加熱処理前の樹脂シートの発熱量の10%以下の場合を○と判定した。加熱処理後の樹脂シートの発熱量が加熱処理前の樹脂シートの発熱量の10%より大きい場合を×と判定した。
キャリア(300mm×400mm×厚み1.4mmのガラス板(テンパックスガラス)に仮固定粘着シート(日東電工社製のNo.3195V)を積層し、さらに仮固定粘着シート上に6mm×6mm×厚み200μmの半導体素子を9mm間隔となるように配列したもの)に樹脂シートを積層し、150℃で1時間加熱した。キャリアから樹脂シートを剥離した後、樹脂シートの反り量を測定し、1mm以下である場合を○と判定し、1mmより大きいものを×と判定した。
キャリア(300mm×400mm×厚み1.4mmのガラス板(テンパックスガラス)に仮固定粘着シート(日東電工社製のNo.3195V)を積層し、さらに仮固定粘着シート上に6mm×6mm×厚み200μmの半導体素子を9mm間隔となるように配列したもの)に樹脂シートを積層し、150℃で1時間加熱した。キャリアから樹脂シートを剥離した後、樹脂シートのチップ周辺部(半導体素子周辺部)を観察した。チップ周辺部にボイドがない場合を○と判定し、ボイドがある場合を×と判定した。
キャリア(300mm×400mm×厚み1.4mmのガラス板(テンパックスガラス)に仮固定粘着シート(日東電工社製のNo.3195V)を積層し、さらに仮固定粘着シート上に6mm×6mm×厚み200μmの半導体素子を9mm間隔となるように配列したもの)に樹脂シートを積層し、150℃で1時間加熱した。その後、積層体(成形物)を個片化し、半導体パッケージを得た。得られた半導体パッケージに対し、熱サイクル試験(温度−50℃〜125℃、1サイクル1時間)を実施した。熱サイクル試験後に半導体パッケージを観察し、2000サイクル以上で樹脂の割れ及び剥離が生じなかったものを◎と判定し、1000サイクル以上で樹脂の割れ及び剥離が生じなかったものを○と判定し、樹脂の割れ又は剥離が生じたものを×と判定した。
一方、上記式(1)及び上記式(2)のいずれかを満たさない比較例では、いずれかの性能が劣っていた。例えば、比較例3は熱硬化反応の進行が速く、樹脂シートによりチップ周辺部を充填できなかった。
12 半導体ウェハ
12a 電極
12b ビア
13 半導体チップ
13a バンプ
14 アンダーフィル材
15 封止体
16 半導体パッケージ
21 配線
22 再配線層
23 バンプ
41 仮固定材
42 支持体
43 粘着剤層
51 封止体
52 再配線
53 バンプ
61 半導体パッケージ
Claims (11)
- 活性化エネルギー(Ea)が下記式(1)を満たし、かつ
150℃で1時間熱硬化処理した後の熱硬化物のガラス転移温度が125℃以上であり、
前記熱硬化物の前記ガラス転移温度以下における熱膨張係数α[ppm/K]及び前記熱硬化物の25℃における貯蔵弾性率E’[GPa]が下記式(2)を満たす半導体チップ封止用熱硬化性樹脂シート。
30≦Ea≦120[kJ/mol] ・・・(1)
10000≦α×E’≦300000[Pa/K] ・・・(2) - エポキシ樹脂、フェノールノボラック系硬化剤、無機充填材及び硬化促進剤を含む請求項1に記載の半導体チップ封止用熱硬化性樹脂シート。
- 前記無機充填材が平均粒子径0.5μm〜50μmのシリカである請求項2に記載の半導体チップ封止用熱硬化性樹脂シート。
- 前記硬化促進剤がイミダゾール系硬化促進剤である請求項2又は3に記載の半導体チップ封止用熱硬化性樹脂シート。
- 前記無機充填材の含有量が20体積%〜90体積%である請求項2〜4のいずれかに記載の半導体チップ封止用熱硬化性樹脂シート。
- 前記熱硬化物の25℃における貯蔵弾性率E’が3GPa〜30GPaである請求項1〜5のいずれかに記載の半導体チップ封止用熱硬化性樹脂シート。
- 前記熱膨張係数αが3ppm/K〜50ppm/Kである請求項1〜6のいずれかに記載の半導体チップ封止用熱硬化性樹脂シート。
- 請求項1〜7のいずれかに記載の半導体チップ封止用熱硬化性樹脂シート及び前記半導体チップ封止用熱硬化性樹脂シートに埋め込まれた1又は複数の半導体チップを備える封止体を形成する工程(A)と、
前記封止体の樹脂シートを熱硬化する工程(B)とを含む半導体パッケージの製造方法。 - 前記工程(A)において、半導体ウェハにフリップチップ接続された前記半導体チップを前記半導体チップ封止用熱硬化性樹脂シートに埋め込んで前記封止体を形成する請求項8に記載の半導体パッケージの製造方法。
- 前記工程(A)において、仮固定材に固定された前記半導体チップを前記半導体チップ封止用熱硬化性樹脂シートに埋め込んで前記封止体を形成する請求項8に記載の半導体パッケージの製造方法。
- 前記工程(A)において、前記半導体ウェハにフリップチップ接続された複数の前記半導体チップを前記半導体チップ封止用熱硬化性樹脂シートに埋め込んで前記封止体を形成し、
前記工程(B)の後、前記封止体を目的の半導体チップ単位でダイシングする工程(C)をさらに含む請求項8又は9に記載の半導体パッケージの製造方法。
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KR20200081336A (ko) | 2017-11-17 | 2020-07-07 | 린텍 가부시키가이샤 | 수지 시트 |
JP2020105276A (ja) * | 2018-12-26 | 2020-07-09 | 東京応化工業株式会社 | 接着剤組成物、積層体、積層体の製造方法、及び電子部品の製造方法 |
JP7221046B2 (ja) | 2018-12-26 | 2023-02-13 | 東京応化工業株式会社 | 接着剤組成物、積層体、積層体の製造方法、及び電子部品の製造方法 |
JP2022515514A (ja) * | 2018-12-27 | 2022-02-18 | ドゥーサン コーポレイション | 半導体パッケージ用非導電性接着フィルム及びこれを用いる半導体パッケージの製造方法 |
JP7442533B2 (ja) | 2018-12-27 | 2024-03-04 | ドゥーサン コーポレイション | 半導体パッケージ用非導電性接着フィルム及びこれを用いる半導体パッケージの製造方法 |
WO2022190898A1 (ja) * | 2021-03-11 | 2022-09-15 | 日東電工株式会社 | 電極付き硬化樹脂シートの製造方法、電極付き硬化樹脂シート、および熱硬化性樹脂シート |
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CN105555848A (zh) | 2016-05-04 |
US20160211228A1 (en) | 2016-07-21 |
SG11201602233PA (en) | 2016-05-30 |
US9659883B2 (en) | 2017-05-23 |
TW201516122A (zh) | 2015-05-01 |
KR20160060073A (ko) | 2016-05-27 |
CN105555848B (zh) | 2019-04-23 |
WO2015045846A1 (ja) | 2015-04-02 |
JP6320239B2 (ja) | 2018-05-09 |
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