WO2015045846A1 - 半導体チップ封止用熱硬化性樹脂シート及び半導体パッケージの製造方法 - Google Patents
半導体チップ封止用熱硬化性樹脂シート及び半導体パッケージの製造方法 Download PDFInfo
- Publication number
- WO2015045846A1 WO2015045846A1 PCT/JP2014/073755 JP2014073755W WO2015045846A1 WO 2015045846 A1 WO2015045846 A1 WO 2015045846A1 JP 2014073755 W JP2014073755 W JP 2014073755W WO 2015045846 A1 WO2015045846 A1 WO 2015045846A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resin sheet
- semiconductor chip
- sealing
- semiconductor
- thermosetting
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 152
- 229920005989 resin Polymers 0.000 title claims abstract description 148
- 239000011347 resin Substances 0.000 title claims abstract description 148
- 238000007789 sealing Methods 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000003860 storage Methods 0.000 claims abstract description 25
- 230000009477 glass transition Effects 0.000 claims abstract description 16
- 230000004913 activation Effects 0.000 claims abstract description 15
- 229920001187 thermosetting polymer Polymers 0.000 claims description 70
- 239000003822 epoxy resin Substances 0.000 claims description 37
- 229920000647 polyepoxide Polymers 0.000 claims description 37
- 239000011256 inorganic filler Substances 0.000 claims description 30
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 23
- 229920003986 novolac Polymers 0.000 claims description 23
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000003795 chemical substances by application Substances 0.000 claims description 17
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 8
- 125000002883 imidazolyl group Chemical group 0.000 claims description 2
- 238000001029 thermal curing Methods 0.000 abstract 1
- 238000001723 curing Methods 0.000 description 38
- 230000008569 process Effects 0.000 description 24
- 239000006087 Silane Coupling Agent Substances 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 18
- 239000010410 layer Substances 0.000 description 14
- 238000005259 measurement Methods 0.000 description 14
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 12
- 238000010330 laser marking Methods 0.000 description 10
- 238000000227 grinding Methods 0.000 description 9
- 238000004898 kneading Methods 0.000 description 9
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 7
- 229920005992 thermoplastic resin Polymers 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000005350 fused silica glass Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 125000003700 epoxy group Chemical group 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 239000000806 elastomer Substances 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- UHKPXKGJFOKCGG-UHFFFAOYSA-N 2-methylprop-1-ene;styrene Chemical compound CC(C)=C.C=CC1=CC=CC=C1.C=CC1=CC=CC=C1 UHKPXKGJFOKCGG-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229920006243 acrylic copolymer Polymers 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 2
- 125000001951 carbamoylamino group Chemical group C(N)(=O)N* 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 238000001938 differential scanning calorimetry curve Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 2
- 229910000000 metal hydroxide Inorganic materials 0.000 description 2
- 150000004692 metal hydroxides Chemical class 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical class CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 239000013034 phenoxy resin Substances 0.000 description 2
- 229920006287 phenoxy resin Polymers 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 229920002577 polybenzoxazole Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 125000005504 styryl group Chemical group 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 125000000101 thioether group Chemical group 0.000 description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 description 2
- 229920000428 triblock copolymer Polymers 0.000 description 2
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- LTQBNYCMVZQRSD-UHFFFAOYSA-N (4-ethenylphenyl)-trimethoxysilane Chemical compound CO[Si](OC)(OC)C1=CC=C(C=C)C=C1 LTQBNYCMVZQRSD-UHFFFAOYSA-N 0.000 description 1
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- GIWQSPITLQVMSG-UHFFFAOYSA-N 1,2-dimethylimidazole Chemical compound CC1=NC=CN1C GIWQSPITLQVMSG-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- XZKLXPPYISZJCV-UHFFFAOYSA-N 1-benzyl-2-phenylimidazole Chemical compound C1=CN=C(C=2C=CC=CC=2)N1CC1=CC=CC=C1 XZKLXPPYISZJCV-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- SESYNEDUKZDRJL-UHFFFAOYSA-N 3-(2-methylimidazol-1-yl)propanenitrile Chemical compound CC1=NC=CN1CCC#N SESYNEDUKZDRJL-UHFFFAOYSA-N 0.000 description 1
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 1
- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 description 1
- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- OKWYEBJNFREPEV-UHFFFAOYSA-N 3-[dimethoxy(phenylmethoxy)silyl]propan-1-amine Chemical compound NCCC[Si](OC)(OC)OCC1=CC=CC=C1 OKWYEBJNFREPEV-UHFFFAOYSA-N 0.000 description 1
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical group CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 1
- PRKPGWQEKNEVEU-UHFFFAOYSA-N 4-methyl-n-(3-triethoxysilylpropyl)pentan-2-imine Chemical compound CCO[Si](OCC)(OCC)CCCN=C(C)CC(C)C PRKPGWQEKNEVEU-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 229920009204 Methacrylate-butadiene-styrene Polymers 0.000 description 1
- 239000007977 PBT buffer Substances 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- YQGOWXYZDLJBFL-UHFFFAOYSA-N dimethoxysilane Chemical compound CO[SiH2]OC YQGOWXYZDLJBFL-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 229920006242 ethylene acrylic acid copolymer Polymers 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 229920006226 ethylene-acrylic acid Polymers 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 235000014413 iron hydroxide Nutrition 0.000 description 1
- NCNCGGDMXMBVIA-UHFFFAOYSA-L iron(ii) hydroxide Chemical compound [OH-].[OH-].[Fe+2] NCNCGGDMXMBVIA-UHFFFAOYSA-L 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 229920003049 isoprene rubber Polymers 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- HMDRAGZZZBGZJC-UHFFFAOYSA-N n-[3-[3-aminopropoxy(dimethoxy)silyl]propyl]-1-phenylprop-2-en-1-amine Chemical compound NCCCO[Si](OC)(OC)CCCNC(C=C)C1=CC=CC=C1 HMDRAGZZZBGZJC-UHFFFAOYSA-N 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- CVNKFOIOZXAFBO-UHFFFAOYSA-J tin(4+);tetrahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[Sn+4] CVNKFOIOZXAFBO-UHFFFAOYSA-J 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- VTHOKNTVYKTUPI-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSSSCCC[Si](OCC)(OCC)OCC VTHOKNTVYKTUPI-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/50—Amines
- C08G59/5046—Amines heterocyclic
- C08G59/5053—Amines heterocyclic containing only nitrogen as a heteroatom
- C08G59/5073—Amines heterocyclic containing only nitrogen as a heteroatom having two nitrogen atoms in the ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/686—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/147—Semiconductor insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
- H01L2223/54486—Located on package parts, e.g. encapsulation, leads, package substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/141—Disposition
- H01L2224/1418—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/14181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
- H01L2224/16146—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a via connection in the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73259—Bump and HDI connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92222—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92224—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a build-up interconnect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06568—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices decreasing in size, e.g. pyramidical stack
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Definitions
- the present invention relates to a thermosetting resin sheet for sealing a semiconductor chip and a method for manufacturing a semiconductor package.
- a method for manufacturing a semiconductor package a method of sealing one or a plurality of semiconductor chips fixed to a substrate or the like with a sealing resin is known.
- a sealing resin for example, a thermosetting resin sheet is known (for example, see Patent Document 1).
- Warping deformation may occur in the semiconductor package due to the volume shrinkage of the sealing resin during the thermosetting process.
- the semiconductor package cannot be sufficiently fixed to the stage (for example, adsorption fixing), and it may be difficult to grind the sealing resin of the semiconductor package.
- the thermal expansion coefficient of the sealing resin is usually larger than other elements (for example, a semiconductor chip, a substrate, etc.) that constitute the semiconductor package, the semiconductor package may be warped, which improves the reliability. There is room.
- the present invention solves the above-mentioned problems and provides a thermosetting resin sheet for sealing a semiconductor chip and a method for manufacturing a semiconductor package, which can reduce warping deformation due to volume shrinkage of the thermosetting resin sheet and is excellent in reliability and storage stability.
- the purpose is to provide.
- the activation energy (Ea) satisfies the following formula (1) and the glass transition temperature of the thermoset after thermosetting at 150 ° C. for 1 hour is 125 ° C. or higher,
- Thermosetting resin sheet for sealing a semiconductor chip satisfying the following formula (2): thermal expansion coefficient ⁇ [ppm / K] below the glass transition temperature and storage elastic modulus E ′ [GPa] at 25 ° C. of the thermoset About. 30 ⁇ Ea ⁇ 120 [kJ / mol] (1) 10,000 ⁇ ⁇ ⁇ E ′ ⁇ 300000 [Pa / K] (2)
- Ea is 120 kJ / mol or less and can be thermally cured at a relatively low temperature, warpage can be reduced. Moreover, since it is not necessary to heat for a long time in order to thermoset, it is excellent in productivity.
- thermosetting resin sheet can be thermally cured after following the unevenness (unevenness formed by a semiconductor chip or the like) by heating. As a result, the generation of voids can be reduced. Also, the storage stability is good.
- the thermal expansion coefficient ⁇ below the glass transition temperature of the thermoset and the storage elastic modulus E ′ at 25 ° C. of the thermoset satisfy the above formula (2). For this reason, the thermal stress which arises by the difference in a thermal expansion coefficient can be relieved, and the semiconductor package excellent in reliability can be obtained.
- the thermal expansion coefficient ⁇ becomes low and the thermal expansion behavior of the thermosetting resin sheet is suppressed, so that mechanical damage to other elements (for example, a semiconductor chip, a substrate, etc.) constituting the semiconductor package can be reduced.
- thermosetting product Since the glass transition temperature of the thermosetting product is 125 ° C. or higher, a rapid change in physical properties in the normal use temperature range of the semiconductor package and the temperature range (maximum 125 ° C.) of the thermal cycle reliability test can be suppressed.
- thermosetting resin sheet for sealing a semiconductor chip of the present invention preferably contains an epoxy resin, a phenol novolac-based curing agent, an inorganic filler, and a curing accelerator.
- the inorganic filler is preferably silica having an average particle size of 0.5 ⁇ m to 50 ⁇ m.
- the curing accelerator is an imidazole curing accelerator.
- an imidazole curing accelerator By using an imidazole curing accelerator, the activation energy can be easily adjusted to 30 to 120 kJ / mol, and the curing reaction at the kneading temperature can be suppressed.
- the content of the inorganic filler is preferably 20% by volume to 90% by volume.
- the storage elastic modulus E ′ at 25 ° C. of the thermoset is preferably 3 GPa to 30 GPa.
- the thermal expansion coefficient ⁇ is preferably 3 ppm / K to 50 ppm / K.
- the present invention also includes a step (A) of forming a sealing body including the thermosetting resin sheet for sealing a semiconductor chip and one or more semiconductor chips embedded in the thermosetting resin sheet for sealing a semiconductor chip. And a step (B) of thermosetting the resin sheet of the sealing body.
- the sealing body is formed by embedding the semiconductor chip flip-chip connected to a semiconductor wafer in the thermosetting resin sheet for sealing the semiconductor chip.
- the sealing body is formed by embedding the semiconductor chip fixed to the temporarily fixing material in the thermosetting resin sheet for sealing the semiconductor chip.
- the sealing body is formed by embedding a plurality of the semiconductor chips flip-chip connected to the semiconductor wafer in the thermosetting resin sheet for sealing the semiconductor chip.
- the manufacturing method of the semiconductor package of this invention further includes the process (C) of dicing the said sealing body per target semiconductor chip after the said process (B).
- FIG. 3 is a schematic cross-sectional view of a resin sheet according to Embodiment 1.
- FIG. It is a cross-sectional schematic diagram of a semiconductor wafer on which a semiconductor chip is flip-chip mounted. It is a figure which shows typically a mode that the semiconductor chip was sealed with the resin sheet of Embodiment 1.
- FIG. It is a figure which shows typically a mode that the resin sheet part of the semiconductor package was ground. It is a figure which shows typically a mode that the semiconductor wafer part of the semiconductor package was ground. It is a figure which shows typically a mode that the rewiring layer and bump were formed in the semiconductor package. It is a figure which shows typically a mode that the semiconductor package was diced.
- FIG. 1 is a schematic cross-sectional view of a resin sheet 11 according to the first embodiment.
- supports such as a polyethylene terephthalate (PET) film may be provided on both surfaces of the resin sheet 11.
- PET polyethylene terephthalate
- a release treatment may be applied to the support.
- Resin sheet 11 has thermosetting properties.
- the activation energy (Ea) of the resin sheet 11 is 30 kJ / mol or more. Since it is 30 kJ / mol or more, the thermosetting resin sheet can be thermoset after following the unevenness (unevenness formed by a semiconductor chip or the like) by heating. As a result, the generation of voids can be reduced. Also, the storage stability is good.
- the activation energy of the resin sheet 11 is preferably 40 kJ / mol or more, more preferably 50 kJ / mol or more, and further preferably 60 kJ / mol or more.
- the activation energy of the resin sheet 11 is 120 kJ / mol or less. Since it is 120 kJ / mol or less and can be thermally cured at a relatively low temperature, warpage can be reduced. Moreover, since it is not necessary to heat for a long time in order to thermoset, it is excellent in productivity.
- the activation energy of the resin sheet 11 is preferably 100 kJ / mol or less. The activation energy can be measured by the method described in the examples.
- the activation energy of the resin sheet 11 can be controlled by the type of the curing accelerator and the amount of the curing accelerator.
- the resin sheet 11 satisfies the following formula (2). 10,000 ⁇ ⁇ ⁇ E ′ ⁇ 300000 [Pa / K] (2)
- (alpha) is a thermal expansion coefficient [ppm / K] in below the glass transition temperature of the thermosetting material after heat-curing at 150 degreeC for 1 hour.
- E ′ is the storage elastic modulus [GPa] at 25 ° C. of the thermoset after thermosetting at 150 ° C. for 1 hour.
- the thermal stress caused by the difference in thermal expansion coefficient can be alleviated.
- the thermal expansion coefficient ⁇ becomes low and the thermal expansion behavior of the resin sheet 11 is suppressed, so that mechanical damage to other elements (for example, a semiconductor chip, a substrate, etc.) constituting the semiconductor package can be reduced.
- ⁇ ⁇ E ′ is preferably 100,000 Pa / K or more. ⁇ ⁇ E ′ is preferably 200,000 Pa / K or less.
- the storage elastic modulus E ′ is preferably 3 GPa or more, more preferably 10 GPa or more, and further preferably 15 GPa or more. When it is 3 GPa or more, the thermal stress relaxation effect is high.
- the upper limit of the storage elastic modulus E ′ is not particularly limited, and is, for example, 30 GPa or less, preferably 25 GPa or less.
- the storage elastic modulus E ′ can be measured by the method described in the examples.
- the storage elastic modulus E ′ of the resin sheet 11 can be controlled by the content of the inorganic filler and the content of the thermoplastic resin.
- the storage elastic modulus E ′ can be increased by increasing the content of the inorganic filler and increasing the content of the thermoplastic resin.
- the thermal expansion coefficient ⁇ is preferably 50 ppm / K or less, more preferably 20 ppm / K or less, and still more preferably 15 ppm / K or less.
- concentration is 50 ppm / K or less, the thermal stress relaxation effect is high.
- the lower limit of the thermal expansion coefficient ⁇ is not particularly limited, and is, for example, 3 ppm / K or more.
- the thermal expansion coefficient ⁇ can be measured by the method described in the examples.
- the thermal expansion coefficient ⁇ of the resin sheet 11 can be controlled by the content of the inorganic filler.
- the thermal expansion coefficient ⁇ can be reduced by increasing the content of the inorganic filler.
- the glass transition temperature (Tg) of the thermoset after the resin sheet 11 is thermoset at 150 ° C. for 1 hour is 125 ° C. or higher.
- the upper limit of the glass transition temperature of the thermoset is not particularly limited, and is, for example, 180 ° C. or lower, preferably 160 ° C. or lower.
- the glass transition temperature can be measured by the method described in the examples.
- the glass transition temperature of the thermoset of the resin sheet 11 can be controlled by the crosslink density due to the functional groups of the thermosetting resin (for example, epoxy resin or phenol resin).
- the glass transition temperature can be increased by applying a thermosetting resin having a large number of functional groups in the molecule.
- the resin sheet 11 preferably contains an epoxy resin.
- the epoxy resin is not particularly limited.
- triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
- the epoxy resin is solid at room temperature having an epoxy equivalent of 150 to 250 and a softening point or melting point of 50 to 130 ° C.
- the epoxy resin is solid at room temperature having an epoxy equivalent of 150 to 250 and a softening point or melting point of 50 to 130 ° C.
- triphenylmethane type epoxy resin, cresol novolac type epoxy resin, and biphenyl type epoxy resin are more preferable from the viewpoint of reliability.
- bisphenol F type epoxy resin is preferable.
- the resin sheet 11 preferably contains a phenol novolac curing agent.
- a phenol novolac resin can be suitably used.
- a phenol novolak resin having a biphenylaralkyl skeleton can be particularly preferably used.
- curing agent may be used independently and may be used together 2 or more types.
- phenol novolac-based curing agent it is preferable to use one having a hydroxyl group equivalent of 70 to 250 and a softening point of 50 to 110 ° C. from the viewpoint of reactivity with the epoxy resin.
- the total content of the epoxy resin and the phenol novolac curing agent in the resin sheet 11 is preferably 5% by weight or more. Adhesive strength with respect to a semiconductor chip etc. is acquired favorably as it is 5 weight% or more.
- the total content of the epoxy resin and the phenol novolac curing agent in the resin sheet 11 is preferably 40% by weight or less, and more preferably 20% by weight or less. If it is 40% by weight or less, the hygroscopicity can be kept low.
- the blending ratio of the epoxy resin and the phenol novolac curing agent is such that the total number of hydroxyl groups in the phenol novolac curing agent is 0.7 to 1.5 with respect to 1 equivalent of the epoxy group in the epoxy resin. It is preferable to blend so as to be equivalent, more preferably 0.9 to 1.2 equivalent.
- the resin sheet 11 preferably contains a curing accelerator.
- the curing accelerator is not particularly limited as long as the curing of the epoxy resin and the phenol novolac curing agent proceeds.
- 2-methylimidazole (trade name; 2MZ), 2-undecylimidazole (trade name; C11-Z), 2-heptadecylimidazole (trade name; C17Z), 1,2-dimethylimidazole (trade name; 1.2DMZ), 2-ethyl-4-methylimidazole (trade name; 2E4MZ), 2-phenyl Imidazole (trade name; 2PZ), 2-phenyl-4-methylimidazole (trade name; 2P4MZ), 1-benzyl-2-methylimidazole (trade name; 1B2MZ), 1-benzyl-2-phenylimidazole (trade name; 1B2PZ), 1-cyanoethyl-2-methylimidazole (trade name; 2MZ-CN), 1 Cyanoethyl-2-undecylimidazole (trade name; C
- an imidazole-based curing accelerator is preferable because the activation energy can be easily adjusted to 30 to 80 kJ / mol and the curing reaction at the kneading temperature can be suppressed, and 2-phenyl-4,5-dihydroxymethylimidazole is preferable.
- 2,4-diamino-6- [2′-ethyl-4′-methylimidazolyl- (1 ′)]-ethyl-s-triazine is more preferred, and 2-phenyl-4,5-dihydroxymethylimidazole is more preferred.
- the content of the curing accelerator is preferably 0.2 parts by weight or more, more preferably 0.5 parts by weight or more, still more preferably 0.8 parts by weight with respect to a total of 100 parts by weight of the epoxy resin and the phenol novolac curing agent. It is more than part by weight. When it is 0.2 parts by weight or more, the activation energy can be easily adjusted to 80 kJ / mol or less.
- the content of the curing accelerator is preferably 5 parts by weight or less, more preferably 2 parts by weight or less with respect to 100 parts by weight of the total of the epoxy resin and the phenol novolac curing agent. Activation energy can be easily adjusted to 30 kJ / mol or more as it is 5 weight part or less.
- the resin sheet 11 preferably contains a thermoplastic resin (elastomer).
- Thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplasticity.
- MBS resin methyl methacrylate-butadiene-styrene copolymer
- the content of the thermoplastic resin in the resin sheet 11 is preferably 1% by weight or more.
- flexibility and flexibility can be provided as it is 1 weight% or more.
- the content of the thermoplastic resin in the resin sheet 11 is preferably 30% by weight or less. Adhesive force with respect to a semiconductor chip etc. is acquired favorably as it is 30 weight% or less.
- the resin sheet 11 preferably contains an inorganic filler.
- the storage elastic modulus E ′ can be increased and the thermal expansion coefficient ⁇ can be reduced.
- the inorganic filler examples include quartz glass, talc, silica (such as fused silica and crystalline silica), alumina, aluminum nitride, silicon nitride, and boron nitride.
- silica and alumina are preferable and silica is more preferable because the thermal expansion coefficient can be satisfactorily reduced.
- Silica is preferably fused silica and more preferably spherical fused silica because it is excellent in fluidity.
- the average particle diameter of the inorganic filler is preferably 0.5 ⁇ m or more, more preferably 5 ⁇ m or more. When it is 0.5 ⁇ m or more, it is easy to obtain flexibility and flexibility of the resin sheet 11.
- the average particle diameter of the inorganic filler is preferably 50 ⁇ m or less, more preferably 30 ⁇ m or less. When it is 50 ⁇ m or less, it is easy to increase the filling rate of the inorganic filler.
- the average particle size can be derived by, for example, using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
- the inorganic filler is preferably treated (pretreated) with a silane coupling agent. Thereby, the wettability with resin can be improved and the dispersibility of an inorganic filler can be improved.
- the silane coupling agent is a compound having a hydrolyzable group and an organic functional group in the molecule.
- hydrolyzable group examples include an alkoxy group having 1 to 6 carbon atoms such as a methoxy group and an ethoxy group, an acetoxy group, and a 2-methoxyethoxy group.
- a methoxy group is preferable because it easily removes volatile components such as alcohol generated by hydrolysis.
- organic functional group examples include vinyl group, epoxy group, styryl group, methacryl group, acrylic group, amino group, ureido group, mercapto group, sulfide group, and isocyanate group.
- an epoxy group is preferable because it easily reacts with an epoxy resin and a phenol novolac curing agent.
- silane coupling agent examples include vinyl group-containing silane coupling agents such as vinyltrimethoxysilane and vinyltriethoxysilane; 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropylmethyl Epoxy group-containing silane coupling agents such as dimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane; p-styryltrimethoxysilane, etc.
- vinyl group-containing silane coupling agents such as vinyltrimethoxysilane and vinyltriethoxysilane
- 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane 3-glycidoxypropylmethyl Epoxy group-containing silane coupling agents such as dimethoxysilane, 3-glycidoxypropyl
- Styryl group-containing silane coupling agent 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltri Methacrylic group-containing silane coupling agents such as toxisilane; Acrylic group-containing silane coupling agents such as 3-acryloxypropyltrimethoxysilane; N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (Aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine, N Amino group-containing silane coupling agents such as phenyl-3-a
- the method for treating the inorganic filler with the silane coupling agent is not particularly limited, and is a wet method in which the inorganic filler and the silane coupling agent are mixed in a solvent, and the inorganic filler and the silane coupling agent are treated in a gas phase. And dry method.
- the treatment amount of the silane coupling agent is not particularly limited, but it is preferable to treat 0.1 to 1 part by weight of the silane coupling agent with respect to 100 parts by weight of the untreated inorganic filler.
- the content of the inorganic filler in the resin sheet 11 is preferably 20% by volume or more, more preferably 70% by volume or more, and further preferably 74% by volume or more. If it is 20% by volume or more, ⁇ ⁇ E ′ can be easily adjusted to 10000 Pa / K or more. On the other hand, the content of the inorganic filler is preferably 90% by volume or less, and more preferably 85% by volume or less. When it is 90% by volume or less, good unevenness followability can be obtained. Further, ⁇ ⁇ E ′ can be easily adjusted to 300000 Pa / K or less.
- the content of the inorganic filler can be explained by using “wt%” as a unit.
- the content of silica will be described in units of “% by weight”. Since silica usually has a specific gravity of 2.2 g / cm 3 , the preferred range of the silica content (% by weight) is, for example, as follows. That is, the content of silica in the resin sheet 11 is preferably 81% by weight or more, and more preferably 84% by weight or more. 94 weight% or less is preferable and, as for content of the silica in the resin sheet 11, 91 weight% or less is more preferable.
- the preferred range of the alumina content is, for example, as follows. That is, the content of alumina in the resin sheet 11 is preferably 88% by weight or more, and more preferably 90% by weight or more. 97 weight% or less is preferable and, as for content of the alumina in the resin sheet 11, 95 weight% or less is more preferable.
- Resin sheet 11 may contain, in addition to the above components, compounding agents generally used in the production of sealing resins, for example, flame retardant components, pigments, silane coupling agents, and the like.
- the flame retardant component for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complex metal hydroxide, phosphazene compounds, and the like can be used. Of these, phosphazene compounds are preferred because they are excellent in flame retardancy and strength after curing.
- the pigment is not particularly limited, and examples thereof include carbon black.
- the manufacturing method of the resin sheet 11 is not particularly limited, the kneaded material obtained by kneading the respective components (for example, epoxy resin, phenol novolac curing agent, inorganic filler, curing accelerator, etc.) is plastically processed into a sheet shape. Is preferred. Thereby, the inorganic filler can be highly filled and the thermal expansion coefficient can be designed low.
- the respective components for example, epoxy resin, phenol novolac curing agent, inorganic filler, curing accelerator, etc.
- a kneaded product is prepared by melt-kneading an epoxy resin, a phenol novolac-based curing agent, an inorganic filler, a curing accelerator, and the like with a known kneader such as a mixing roll, a pressure kneader, an extruder,
- the obtained kneaded material is plastically processed into a sheet shape.
- the upper limit of the temperature is preferably 140 ° C. or less, and more preferably 130 ° C. or less.
- the lower limit of the temperature is preferably equal to or higher than the softening point of each component described above, for example, 30 ° C or higher, and preferably 50 ° C or higher.
- the kneading time is preferably 1 to 30 minutes.
- the kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere), and the pressure under reduced pressure conditions is, for example, 1 ⁇ 10 ⁇ 4 to 0.1 kg / cm 2 .
- the kneaded material after melt-kneading is preferably subjected to plastic working in a high temperature state without cooling.
- the plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendering method.
- the plastic working temperature is preferably not less than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C. in consideration of the thermosetting property and moldability of the epoxy resin. is there.
- the thickness of the resin sheet 11 is not particularly limited, but is preferably 100 ⁇ m or more, more preferably 150 ⁇ m or more. Moreover, the thickness of the resin sheet 11 becomes like this. Preferably it is 2000 micrometers or less, More preferably, it is 1000 micrometers or less. A semiconductor chip can be favorably sealed as it is in the above-mentioned range.
- the resin sheet 11 is a single layer
- the resin sheet 11 is not limited to this, A multilayer may be sufficient.
- Resin sheet 11 is used to seal the semiconductor chip.
- a semiconductor package can be obtained by performing the following steps.
- a semiconductor wafer 12 on which a plurality of semiconductor chips 13 are flip-chip mounted is prepared (see FIG. 2).
- bumps 13 a are formed on the circuit formation surface (active surface) of the semiconductor chip 13.
- an electrode 12 a is formed on the circuit forming surface (active surface) of the semiconductor wafer 12.
- the semiconductor chip 13 and the semiconductor wafer 12 are usually electrically connected.
- FIG. 2 shows an example in which the semiconductor chip 13 and the semiconductor wafer 12 are electrically connected through bumps 13a and electrodes 12a.
- a known apparatus such as a flip chip bonder or a die bonder can be used for mounting the semiconductor chip 13 on the semiconductor wafer 12.
- an underfill material 14 is filled between the semiconductor chip 13 and the semiconductor wafer 12 as necessary.
- the sealing step the semiconductor chip 13 is sealed with the resin sheet 11 (see FIG. 3). Thereby, the sealing body 15 (semiconductor package 15) provided with the semiconductor chip 13 embedded in the resin sheet 11 and the resin sheet 11 is obtained.
- the sealing body 15 semiconductor package 15
- the semiconductor wafer 12 and the flip-chip connection to the semiconductor wafer 12 are performed.
- a method of embedding the semiconductor chip 13 in the resin sheet 11 by hot pressing a laminated body including the semiconductor chip 13 and the resin sheet 11 disposed on the semiconductor chip 13 by a parallel plate method may be used.
- the temperature is, for example, 40 to 100 ° C., preferably 50 to 90 ° C.
- the pressure is, for example, 0.1 to 10 MPa, preferably 0. 5 to 8 MPa
- the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes.
- it is preferable to press under reduced pressure conditions for example, 0.1 to 5 kPa).
- thermosetting process The resin sheet 11 of the sealing body 15 is thermoset.
- thermosetting treatment are not particularly limited, but are as follows, for example.
- the heating temperature is preferably 100 ° C. or higher, more preferably 120 ° C. or higher.
- the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower.
- the heating time is preferably 10 minutes or more, more preferably 30 minutes or more.
- the upper limit of the heating time is preferably 300 minutes or less, more preferably 180 minutes or less.
- you may pressurize as needed Preferably it is 0.1 Mpa or more, More preferably, it is 0.5 Mpa or more.
- the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.
- the resin sheet 11 of the sealing body 15 is ground (see FIG. 4).
- the grinding method include a grinding method using a grindstone that rotates at high speed.
- the semiconductor wafer 12 of the sealing body 15 is ground.
- Vias 12b can be formed by grinding (see FIG. 5). Examples of the grinding method include a grinding method using a grindstone that rotates at high speed.
- a rewiring layer 22 having wirings 21 is formed on the sealing body 15 as necessary (see FIG. 6).
- bumps 23 are formed on the wirings 21 as necessary.
- FIG. 6 shows an example in which the via 12b and the wiring 21 are connected.
- the sealing body 15 is diced (see FIG. 7). Thereby, the chip-shaped semiconductor package 16 can be obtained.
- the sealing body 15 or the semiconductor package 16 is mounted on the substrate.
- Laser marking can be performed on the sealing body 15 or the semiconductor package 16 at an arbitrary timing. For example, laser marking may be performed on the sealing body 15 before thermosetting, laser marking may be performed on the sealing body 15 after thermosetting, or laser marking may be performed on the semiconductor package 16.
- a semiconductor package can be obtained by performing the following steps. The following steps are suitable for manufacturing a fan-out type wafer level package (WLP).
- WLP fan-out type wafer level package
- the plurality of semiconductor chips 13 are fixed to the temporary fixing material 41 (see FIG. 8). At this time, if necessary, the semiconductor chip 13 is arranged and fixed so that the circuit forming surface of the semiconductor chip 13 faces the temporary fixing material 41.
- a known device such as a flip chip bonder or a die bonder can be used.
- the temporary fixing material 41 usually has a support 42 and an adhesive layer 43 laminated on the support 42.
- the pressure-sensitive adhesive layer 43 is not particularly limited, but a heat-peelable pressure-sensitive adhesive layer, a radiation curable pressure-sensitive adhesive layer, or the like is usually used because it can be easily peeled off.
- the material for the support 42 is not particularly limited. For example, metal materials such as SUS, plastic materials such as polyimide, polyamideimide, polyetheretherketone, and polyethersulfone.
- the sealing step the semiconductor chip 13 is sealed with the resin sheet 11 (see FIG. 9). Thereby, the sealing body 51 provided with the semiconductor chip 13 embedded in the resin sheet 11 and the resin sheet 11 is obtained.
- the temporary fixing material 41 and the temporary fixing material 41 are placed on the temporary fixing material 41.
- a method of embedding the semiconductor chip 13 in the resin sheet 11 by hot pressing a laminated body including the arranged semiconductor chip 13 and the resin sheet 11 arranged on the semiconductor chip 13 by a parallel plate method may be used.
- the hot press conditions for embedding the semiconductor chip 13 in the resin sheet 11 the contents described in the above-described manufacturing method can be adopted.
- the sealing body 51 is thermally cured (the resin sheet 11 of the sealing body 51 is thermally cured).
- thermosetting treatment The conditions described in the above-mentioned manufacturing method can be adopted as the conditions for the thermosetting treatment.
- the temporarily fixing material 41 is peeled from the sealing body 51 (see FIG. 10).
- the peeling method is not particularly limited, it is preferable to peel the adhesive layer 43 after reducing the adhesive strength.
- the pressure-sensitive adhesive layer 43 is a heat-peelable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 43 is heated and peeled after the pressure-sensitive adhesive force of the pressure-sensitive adhesive layer 43 is reduced.
- the resin sheet 11 of the sealing body 51 is ground as needed (refer FIG. 11).
- the grinding method include a grinding method using a grindstone that rotates at high speed.
- FIG. 12 shows an example in which the rewiring 52 and the semiconductor chip 13 are connected.
- an insulating layer such as polyimide or polybenzoxazole (PBO) is formed on the surface of the sealing body 51 where the rewiring 52 is formed.
- the insulating layer can be formed, for example, by laminating a film such as a dry film resist.
- the bumping process can be performed by a known method such as solder ball or solder plating.
- Dicing process Dicing of the sealing body 51 including the semiconductor chip 13, the resin sheet 11, the rewiring 52, and the like may be performed (see FIG. 13). As described above, the semiconductor package 61 in which the wiring is drawn outside the chip region can be obtained. In addition, you may use the sealing body 51 as a semiconductor package as it is, without dicing.
- the semiconductor package 61 is mounted on the substrate as necessary.
- Laser marking can be performed on the sealing body 51 or the semiconductor package 61 at an arbitrary timing. For example, laser marking may be performed on the sealing body 51 before thermosetting, laser marking may be performed on the sealing body 51 after thermosetting, or laser marking may be performed on the semiconductor package 61.
- the step (A) of forming the sealing body 15, 51 including the resin sheet 11 and one or more semiconductor chips 13 embedded in the resin sheet 11, and the resin sheet of the sealing body 15, 51 The semiconductor packages 16 and 61 can be manufactured by a method including the step (B) of thermally curing the semiconductor 11.
- the sealing body 15 may be formed by embedding the semiconductor chip 13 flip-chip connected to the semiconductor wafer 12 in the resin sheet 11. At this time, in the step (A), a plurality of semiconductor chips 13 flip-chip connected to the semiconductor wafer 12 can be embedded in the resin sheet 11 to form the sealing body 15. And the said method may further include the process (C) of dicing the sealing body 15 for the target semiconductor chip unit after a process (B).
- the sealing body 51 may be formed by embedding the semiconductor chip 13 fixed to the temporarily fixing material 41 in the resin sheet 11.
- Epoxy resin A YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 200 g / eq. Softening point 80 ° C.)
- Epoxy resin B EPPN501-HY manufactured by Nippon Kayaku Co., Ltd. (epoxy equivalent 169 g / eq. Softening point 60 ° C.)
- Phenol resin A MEH-7851-SS manufactured by Meiwa Kasei Co., Ltd. (phenol novolac resin having a biphenylaralkyl skeleton, hydroxyl group equivalent 203 g / eq.
- Phenol resin B MEH-7500-3S (phenol novolac resin, hydroxyl group equivalent 103 g / eq. Softening point 83 ° C.) manufactured by Meiwa Kasei Co., Ltd.
- Curing accelerator A 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
- Curing accelerator B TPP-K (tetraphenylphosphonium tetraphenylborate) manufactured by Hokuko Chemical Co., Ltd.
- Curing accelerator C 2E4MZ-A (2,4-diamino-6- [2′-ethyl-4′-methylimidazolyl- (1 ′)]-ethyl-s-triazine) manufactured by Shikoku Kasei Kogyo Co., Ltd.
- Elastomer A SIBSTAR 072T (styrene-isobutylene-styrene triblock copolymer) manufactured by Kaneka Corporation
- Inorganic filler B SO-25R manufactured by Admatechs (spherical fused silica powder, average particle size 0.5 ⁇ m)
- Silane coupling agent KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd.
- Carbon black # 20 manufactured by Mitsubishi Chemical
- each component is blended with a mixer, melt kneaded for 2 minutes at 120 ° C. with a twin-screw kneader, and then extruded from a T-die to produce a resin sheet having a thickness of 500 ⁇ m. did.
- the resin sheet was thermally cured by heat treatment at 150 ° C. for 1 hour, and then cut into a strip shape having a thickness of 200 ⁇ m, a length of 40 mm (measurement length), and a width of 10 mm with a cutter knife, and a solid viscoelasticity measuring device (RSAIII, Rheo) (Metric Scientific Co., Ltd.) was used to measure the storage elastic modulus and loss elastic modulus at ⁇ 50 to 300 ° C.
- the measurement conditions were a frequency of 1 Hz and a heating rate of 10 ° C./min.
- the glass transition temperature was obtained by calculating the value of tan ⁇ (G ′′ (loss elastic modulus) / G ′ (storage elastic modulus)).
- a temporary fixing adhesive sheet (No. 3195V manufactured by Nitto Denko Corporation) is laminated on a carrier (300 mm ⁇ 400 mm ⁇ 1.4 mm thick glass plate (Tempax glass)), and further 6 mm ⁇ 6 mm ⁇ 200 ⁇ m thickness on the temporary fixing adhesive sheet.
- a resin sheet was laminated on the semiconductor elements arranged at intervals of 9 mm and heated at 150 ° C. for 1 hour. After the resin sheet was peeled from the carrier, the amount of warpage of the resin sheet was measured, and when it was 1 mm or less, it was determined as ⁇ , and when it was larger than 1 mm, it was determined as x.
- a temporary fixing pressure-sensitive adhesive sheet (No. 3195V manufactured by Nitto Denko Corporation) is laminated on a carrier (300 mm ⁇ 400 mm ⁇ 1.4 mm thick glass plate (Tempax glass)), and further 6 mm ⁇ 6 mm ⁇ 200 ⁇ m thickness on the temporary fixing pressure-sensitive adhesive sheet.
- a resin sheet was laminated on the semiconductor elements arranged at intervals of 9 mm and heated at 150 ° C. for 1 hour. After peeling the resin sheet from the carrier, the chip peripheral part (semiconductor element peripheral part) of the resin sheet was observed. The case where there was no void in the periphery of the chip was determined as ⁇ , and the case where there was a void was determined as x.
- a temporary fixing pressure-sensitive adhesive sheet (No. 3195V manufactured by Nitto Denko Corporation) is laminated on a carrier (300 mm ⁇ 400 mm ⁇ 1.4 mm thick glass plate (Tempax glass)), and further 6 mm ⁇ 6 mm ⁇ 200 ⁇ m thickness on the temporary fixing pressure-sensitive adhesive sheet.
- a resin sheet was laminated on the semiconductor elements arranged at intervals of 9 mm and heated at 150 ° C. for 1 hour. Thereafter, the laminate (molded product) was separated into individual pieces to obtain a semiconductor package.
- a thermal cycle test (temperature: ⁇ 50 ° C. to 125 ° C., 1 cycle for 1 hour) was performed on the obtained semiconductor package.
- thermosetting reaction advanced by the comparatively low-temperature heat processing (heat processing at 110 degreeC for 5 hours).
- the resin sheet followed the unevenness
- a crack and peeling did not arise in the heat cycle test.
- fill either of the said Formula (1) and the said Formula (2) either performance was inferior.
- the progress of the thermosetting reaction was fast, and the chip peripheral part could not be filled with the resin sheet.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Ceramic Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Epoxy Resins (AREA)
- Wire Bonding (AREA)
Abstract
Description
30≦Ea≦120[kJ/mol] ・・・(1)
10000≦α×E’≦300000[Pa/K] ・・・(2)
なお、熱硬化物のガラス転移温度は125℃以上であるので、半導体パッケージの通常の使用温度範囲及び熱サイクル信頼性試験の温度範囲(最大125℃)における急激な物性変化を抑制できる。
図1は、実施形態1の樹脂シート11の断面模式図である。なお、樹脂シート11の両面には、ポリエチレンテレフタレート(PET)フィルムなどの支持体が設けられていてもよい。樹脂シート11からの剥離を容易に行うために、支持体には離型処理が施されていてもよい。
なお、活性化エネルギーは実施例に記載の方法で測定できる。
10000≦α×E’≦300000[Pa/K] ・・・(2)
上記式(2)において、αは、150℃で1時間熱硬化処理した後の熱硬化物のガラス転移温度以下における熱膨張係数[ppm/K]である。
上記式(2)において、E’は150℃で1時間熱硬化処理した後の熱硬化物の25℃における貯蔵弾性率[GPa]である。
なお、貯蔵弾性率E’は実施例に記載の方法で測定できる。
なお、熱膨張係数αは実施例に記載の方法で測定できる。
なお、ガラス転移温度は実施例に記載の方法で測定できる。
なお、平均粒子径は、例えば、母集団から任意に抽出される試料を用い、レーザー回折散乱式粒度分布測定装置を用いて測定することにより導き出すことができる。
シリカは通常、比重2.2g/cm3であるので、シリカの含有量(重量%)の好適範囲は例えば以下のとおりである。
すなわち、樹脂シート11中のシリカの含有量は、81重量%以上が好ましく、84重量%以上がより好ましい。樹脂シート11中のシリカの含有量は、94重量%以下が好ましく、91重量%以下がより好ましい。
すなわち、樹脂シート11中のアルミナの含有量は、88重量%以上が好ましく、90重量%以上がより好ましい。樹脂シート11中のアルミナの含有量は、97重量%以下が好ましく、95重量%以下がより好ましい。
例えば、以下の工程を行うことで半導体パッケージを得ることができる。
準備工程では、複数の半導体チップ13をフリップチップ実装する半導体ウェハ12を準備する(図2参照)。通常、半導体チップ13の回路形成面(活性面)には、バンプ13aが形成されている。また、通常、半導体ウェハ12の回路形成面(活性面)には、電極12aが形成されている。半導体チップ13と半導体ウェハ12とは、通常、電気的に接続されている。図2では、半導体チップ13と半導体ウェハ12とは、バンプ13aと電極12aを介して電気的に接続されている例を示している。半導体チップ13の半導体ウェハ12への搭載には、フリップチップボンダーやダイボンダーなどの公知の装置を用いることができる。また、必要に応じて、半導体チップ13と半導体ウェハ12の間にアンダーフィル材14を充填する。
封止工程では、半導体チップ13を樹脂シート11で封止する(図3参照)。これにより、樹脂シート11及び樹脂シート11に埋め込まれた半導体チップ13を備える封止体15(半導体パッケージ15)を得る。半導体チップ13を樹脂シート11で封止する方法としては、例えば、半導体ウェハ12にフリップチップ接続された半導体チップ13上に樹脂シート11を積層した後、半導体ウェハ12、半導体ウェハ12にフリップチップ接続された半導体チップ13及び半導体チップ13上に配置された樹脂シート11を備える積層体を平行平板方式で熱プレスすることにより、樹脂シート11に半導体チップ13を埋め込む方法などが挙げられる。
封止体15の樹脂シート11を熱硬化する。
加熱時間が、好ましくは10分以上、より好ましくは30分以上である。一方、加熱時間の上限が、好ましくは300分以下、より好ましくは180分以下である。また、必要に応じて加圧してもよく、好ましくは0.1MPa以上、より好ましくは0.5MPa以上である。一方、上限は好ましくは10MPa以下、より好ましくは5MPa以下である。
必要に応じて、封止体15の樹脂シート11を研削する(図4参照)。研削方法としては、例えば、高速回転する砥石を用いるグラインディング法などが挙げられる。
必要に応じて、封止体15の半導体ウェハ12を研削する。研削により、ビア(Via)12bを形成できる(図5参照)。研削方法としては、例えば、高速回転する砥石を用いるグラインディング法などが挙げられる。次いで、必要に応じて、封止体15に配線21を有する再配線層22を形成する(図6参照)。次いで、必要に応じて、配線21上にバンプ23を形成する。図6では、ビア12bと配線21とが接続されている例を示している。
必要に応じて、封止体15のダイシングを行う(図7参照)。これにより、チップ状の半導体パッケージ16を得ることができる。
必要に応じて、封止体15又は半導体パッケージ16を基板に実装する。
レーザーマーキングは、封止体15又は半導体パッケージ16に任意のタイミングで行うことができる。例えば、熱硬化前の封止体15にレーザーマーキングを行ってもよく、熱硬化後の封止体15にレーザーマーキングを行ってもよく、半導体パッケージ16にレーザーマーキングを行ってもよい。
例えば、以下の工程を行うことでも半導体パッケージを得ることができる。以下の工程は、Fan-out(ファンアウト)型ウェハレベルパッケージ(WLP)の製造に好適である。
まず、仮固定材41に複数の半導体チップ13を固定する(図8参照)。このとき、必要に応じて、半導体チップ13の回路形成面が仮固定材41と対向するように配置固定する。半導体チップ13の固定には、フリップチップボンダーやダイボンダーなどの公知の装置を用いることができる。
封止工程では、半導体チップ13を樹脂シート11で封止する(図9参照)。これにより、樹脂シート11及び樹脂シート11に埋め込まれた半導体チップ13を備える封止体51を得る。半導体チップ13を樹脂シート11で封止する方法としては、例えば、仮固定材41上に配置された半導体チップ13上に樹脂シート11を積層した後、仮固定材41、仮固定材41上に配置された半導体チップ13及び半導体チップ13上に配置された樹脂シート11を備える積層体を平行平板方式で熱プレスすることにより、樹脂シート11に半導体チップ13を埋め込む方法などが挙げられる。
封止体51を熱硬化する(封止体51の樹脂シート11を熱硬化する)。
次いで、封止体51から仮固定材41を剥離する(図10参照)。剥離方法は特に限定されないが、粘着剤層43の粘着力を低下させた後に剥離することが好ましい。例えば、粘着剤層43が熱剥離性粘着剤層である場合、粘着剤層43を加熱し、粘着剤層43の粘着力を低下させた後に剥離する。
次いで、必要に応じて、封止体51の樹脂シート11を研削する(図11参照)。研削方法としては、例えば、高速回転する砥石を用いるグラインディング法などが挙げられる。
次いで、セミアディティブ法などを利用して、封止体51に再配線52を形成する(図12参照)。図12では、再配線52と半導体チップ13とが接続されている例を示している。
半導体チップ13、樹脂シート11及び再配線52などを備える封止体51のダイシングを行ってもよい(図13参照)。以上により、チップ領域の外側に配線を引き出した半導体パッケージ61得ることができる。なお、ダイシングせずに封止体51をそのまま半導体パッケージとして使用してもよい。
必要に応じて、半導体パッケージ61を基板に実装する。
レーザーマーキングは、封止体51又は半導体パッケージ61に任意のタイミングで行うことができる。例えば、熱硬化前の封止体51にレーザーマーキングを行ってもよく、熱硬化後の封止体51にレーザーマーキングを行ってもよく、半導体パッケージ61にレーザーマーキングを行ってもよい。
エポキシ樹脂A:新日鐵化学(株)製のYSLV-80XY(ビスフェノールF型エポキシ樹脂、エポキン当量200g/eq.軟化点80℃)
エポキシ樹脂B:日本化薬社製のEPPN501-HY(エポキシ当量169g/eq.軟化点60℃)
フェノール樹脂A:明和化成社製のMEH-7851-SS(ビフェニルアラルキル骨格を有するフェノールノボラック樹脂、水酸基当量203g/eq.軟化点67℃)
フェノール樹脂B:明和化成社製のMEH-7500-3S(フェノールノボラック樹脂、水酸基当量103g/eq.軟化点83℃)
硬化促進剤A:四国化成工業社製の2PHZ-PW(2-フェニル-4,5-ジヒドロキシメチルイミダゾール)
硬化促進剤B:北興化学工業社製のTPP-K(テトラフェニルホスホニウムテトラフェニルボレート)
硬化促進剤C:四国化成工業社製の2E4MZ-A(2,4-ジアミノ-6-[2’-エチル-4’-メチルイミダゾリル-(1’)]-エチル-s-トリアジン)
エラストマーA:カネカ社製のSIBSTAR 072T(スチレン-イソブチレン-スチレントリブロック共重合体)
エラストマーB:下記合成例1により得られたアクリル共重合体(ブチルアクリレート:アクリロニトリル:グリシジルメタクリレート=85:8:7重量%からなる共重合体、重量平均分子量80万)
無機充填材A:電気化学工業社製のFB-9454(球状溶融シリカ粉末、平均粒子径20μm)
無機充填材B:アドマテックス社製のSO-25R(球状溶融シリカ粉末、平均粒子径0.5μm)
シランカップリング剤:信越化学社製のKBM-403(3-グリシドキシプロピルトリメトキシシラン)
カーボンブラック:三菱化学社製の#20
ブチルアクリレート、アクリロニトリル、グリシジルメタクリレートを85:8:7の仕込み重量比率にて、2,2’-アゾビスイソブチロニトリルを重合開始剤に用い、メチルエチルケトン中で窒素気流下、70℃で5時間と80℃で1時間のラジカル重合を行うことにより、上記アクリル共重合体を得た。
表1に記載の配合比に従い、各成分をミキサーにてブレンドし、2軸混練機により120℃で2分間溶融混練し、続いてTダイから押出しすることにより、厚さ500μmの樹脂シートを作製した。
得られた樹脂シートを用いて下記の評価を行った。結果を表1に示す。
活性化エネルギーは、Friedman(フリードマン)法を用いて、以下の手順で算出した。
まず、樹脂シートを10mg秤量した。10mgの樹脂シートについて、装置名:Q2000(TA インスツルメンツ社製)を用いて、昇温速度1degC/min、2degC/min、5degC/min及び10degC/minでDSC測定して、DSC曲線を得た。
得られたDSC曲線において、発熱ピークにおける積分値がピーク全体において20%に達する温度をT1、60%に達する温度をT2とし、T1からT2まで昇温するのにかかった時間をdtとして、ln(dα/dt)を算出した(dα=0.6-0.2=0.4)。
得られたln(dα/dt)を各測定条件における1/T2軸でプロットし、各プロットから最小二乗法を用いてグラフ(直線)の傾きを算出した。グラフの傾きがEa/Rとなるので、これを利用してEaを算出した(下記式参照)。
樹脂シートを150℃で1時間熱硬化処理してから、固体粘弾性測定装置(レオメトリックサイエンティック社製:形式:RSA-III)を用いて貯蔵弾性率を測定した。すなわち、サンプルサイズを長さ40mm×幅10mm×厚さ200μmとし、測定試料をフィルム引っ張り測定用治具にセットし-50~300℃の温度域での引張貯蔵弾性率及び損失弾性率を、周波数1Hz、昇温速度10℃/minの条件下で測定し、25℃での貯蔵弾性率(E’)を読み取ることにより得た。
樹脂シートを150℃で1時間熱硬化処理した後、熱硬化物から、長さ15mm×幅5mm×厚さ200μmの測定試料を切り出した。測定試料を熱機械測定装置(ティーエーインスツルメント社製:形式Q-400EM)のフィルム引張測定用治具にセットした後、-50~300℃の温度域で、引張荷重2g、昇温速度10℃/minの条件下におき、50℃~70℃での膨張率から熱膨張係数αを算出した。
樹脂シートを150℃で1時間の加熱処理により熱硬化させ、その後厚さ200μm、長さ40mm(測定長さ)、幅10mmの短冊状にカッターナイフで切り出し、固体粘弾性測定装置(RSAIII、レオメトリックサイエンティフィック(株)製)を用いて、-50~300℃における貯蔵弾性率及び損失弾性率を測定した。測定条件は、周波数1Hz、昇温速度10℃/minとした。さらに、tanδ(G’’(損失弾性率)/G’(貯蔵弾性率))の値を算出することによりガラス転移温度を得た。
110℃で5時間加熱処理した後の樹脂シートと加熱処理前の樹脂シートについて、装置名:Q2000(TA インスツルメンツ社製)を用いて、DSC測定して、発熱量を求めた(昇温速度10℃/min)。加熱処理後の樹脂シートにおいて発熱ピークが観測されない場合、又は加熱処理後の樹脂シートの発熱量が加熱処理前の樹脂シートの発熱量の10%以下の場合を○と判定した。加熱処理後の樹脂シートの発熱量が加熱処理前の樹脂シートの発熱量の10%より大きい場合を×と判定した。
キャリア(300mm×400mm×厚み1.4mmのガラス板(テンパックスガラス)に仮固定粘着シート(日東電工社製のNo.3195V)を積層し、さらに仮固定粘着シート上に6mm×6mm×厚み200μmの半導体素子を9mm間隔となるように配列したもの)に樹脂シートを積層し、150℃で1時間加熱した。キャリアから樹脂シートを剥離した後、樹脂シートの反り量を測定し、1mm以下である場合を○と判定し、1mmより大きいものを×と判定した。
キャリア(300mm×400mm×厚み1.4mmのガラス板(テンパックスガラス)に仮固定粘着シート(日東電工社製のNo.3195V)を積層し、さらに仮固定粘着シート上に6mm×6mm×厚み200μmの半導体素子を9mm間隔となるように配列したもの)に樹脂シートを積層し、150℃で1時間加熱した。キャリアから樹脂シートを剥離した後、樹脂シートのチップ周辺部(半導体素子周辺部)を観察した。チップ周辺部にボイドがない場合を○と判定し、ボイドがある場合を×と判定した。
キャリア(300mm×400mm×厚み1.4mmのガラス板(テンパックスガラス)に仮固定粘着シート(日東電工社製のNo.3195V)を積層し、さらに仮固定粘着シート上に6mm×6mm×厚み200μmの半導体素子を9mm間隔となるように配列したもの)に樹脂シートを積層し、150℃で1時間加熱した。その後、積層体(成形物)を個片化し、半導体パッケージを得た。得られた半導体パッケージに対し、熱サイクル試験(温度-50℃~125℃、1サイクル1時間)を実施した。熱サイクル試験後に半導体パッケージを観察し、2000サイクル以上で樹脂の割れ及び剥離が生じなかったものを◎と判定し、1000サイクル以上で樹脂の割れ及び剥離が生じなかったものを○と判定し、樹脂の割れ又は剥離が生じたものを×と判定した。
一方、上記式(1)及び上記式(2)のいずれかを満たさない比較例では、いずれかの性能が劣っていた。例えば、比較例3は熱硬化反応の進行が速く、樹脂シートによりチップ周辺部を充填できなかった。
12 半導体ウェハ
12a 電極
12b ビア
13 半導体チップ
13a バンプ
14 アンダーフィル材
15 封止体
16 半導体パッケージ
21 配線
22 再配線層
23 バンプ
41 仮固定材
42 支持体
43 粘着剤層
51 封止体
52 再配線
53 バンプ
61 半導体パッケージ
Claims (11)
- 活性化エネルギー(Ea)が下記式(1)を満たし、かつ
150℃で1時間熱硬化処理した後の熱硬化物のガラス転移温度が125℃以上であり、
前記熱硬化物の前記ガラス転移温度以下における熱膨張係数α[ppm/K]及び前記熱硬化物の25℃における貯蔵弾性率E’[GPa]が下記式(2)を満たす半導体チップ封止用熱硬化性樹脂シート。
30≦Ea≦120[kJ/mol] ・・・(1)
10000≦α×E’≦300000[Pa/K] ・・・(2) - エポキシ樹脂、フェノールノボラック系硬化剤、無機充填材及び硬化促進剤を含む請求項1に記載の半導体チップ封止用熱硬化性樹脂シート。
- 前記無機充填材が平均粒子径0.5μm~50μmのシリカである請求項2に記載の半導体チップ封止用熱硬化性樹脂シート。
- 前記硬化促進剤がイミダゾール系硬化促進剤である請求項2又は3に記載の半導体チップ封止用熱硬化性樹脂シート。
- 前記無機充填材の含有量が20体積%~90体積%である請求項2~4のいずれかに記載の半導体チップ封止用熱硬化性樹脂シート。
- 前記熱硬化物の25℃における貯蔵弾性率E’が3GPa~30GPaである請求項1~5のいずれかに記載の半導体チップ封止用熱硬化性樹脂シート。
- 前記熱膨張係数αが3ppm/K~50ppm/Kである請求項1~6のいずれかに記載の半導体チップ封止用熱硬化性樹脂シート。
- 請求項1~7のいずれかに記載の半導体チップ封止用熱硬化性樹脂シート及び前記半導体チップ封止用熱硬化性樹脂シートに埋め込まれた1又は複数の半導体チップを備える封止体を形成する工程(A)と、
前記封止体の樹脂シートを熱硬化する工程(B)とを含む半導体パッケージの製造方法。 - 前記工程(A)において、半導体ウェハにフリップチップ接続された前記半導体チップを前記半導体チップ封止用熱硬化性樹脂シートに埋め込んで前記封止体を形成する請求項8に記載の半導体パッケージの製造方法。
- 前記工程(A)において、仮固定材に固定された前記半導体チップを前記半導体チップ封止用熱硬化性樹脂シートに埋め込んで前記封止体を形成する請求項8に記載の半導体パッケージの製造方法。
- 前記工程(A)において、前記半導体ウェハにフリップチップ接続された複数の前記半導体チップを前記半導体チップ封止用熱硬化性樹脂シートに埋め込んで前記封止体を形成し、
前記工程(B)の後、前記封止体を目的の半導体チップ単位でダイシングする工程(C)をさらに含む請求項8又は9に記載の半導体パッケージの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201480051887.5A CN105555848B (zh) | 2013-09-24 | 2014-09-09 | 半导体芯片密封用热固化性树脂片及半导体封装体的制造方法 |
US15/023,501 US9659883B2 (en) | 2013-09-24 | 2014-09-09 | Thermally curable resin sheet for sealing semiconductor chip, and method for manufacturing semiconductor package |
KR1020167009342A KR20160060073A (ko) | 2013-09-24 | 2014-09-09 | 반도체칩 밀봉용 열경화성 수지 시트 및 반도체 패키지의 제조 방법 |
SG11201602233PA SG11201602233PA (en) | 2013-09-24 | 2014-09-09 | Thermally curable resin sheet for sealing semiconductor chip, and method for manufacturing semiconductor package |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-196854 | 2013-09-24 | ||
JP2013196854 | 2013-09-24 | ||
JP2014167223A JP6320239B2 (ja) | 2013-09-24 | 2014-08-20 | 半導体チップ封止用熱硬化性樹脂シート及び半導体パッケージの製造方法 |
JP2014-167223 | 2014-08-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015045846A1 true WO2015045846A1 (ja) | 2015-04-02 |
Family
ID=52742993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2014/073755 WO2015045846A1 (ja) | 2013-09-24 | 2014-09-09 | 半導体チップ封止用熱硬化性樹脂シート及び半導体パッケージの製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9659883B2 (ja) |
JP (1) | JP6320239B2 (ja) |
KR (1) | KR20160060073A (ja) |
CN (1) | CN105555848B (ja) |
SG (1) | SG11201602233PA (ja) |
TW (1) | TW201516122A (ja) |
WO (1) | WO2015045846A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020170847A1 (ja) * | 2019-02-21 | 2020-08-27 | パナソニックIpマネジメント株式会社 | 半導体封止材料及び半導体装置 |
US20220017794A1 (en) * | 2018-12-27 | 2022-01-20 | Doosan Corporation | Non-conductive adhesive film for semiconductor package and semiconductor package manufacturing method using same |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6792322B2 (ja) * | 2015-05-12 | 2020-11-25 | 昭和電工マテリアルズ株式会社 | 半導体装置及び半導体装置の製造方法 |
TWI618615B (zh) * | 2015-08-12 | 2018-03-21 | Zhao Chang Wen | Method for forming thermosetting resin package sheet |
JP2017088759A (ja) * | 2015-11-11 | 2017-05-25 | リンテック株式会社 | 接着シート |
JP6224188B1 (ja) | 2016-08-08 | 2017-11-01 | 太陽インキ製造株式会社 | 半導体封止材 |
US10513579B2 (en) | 2016-11-02 | 2019-12-24 | Sumitomo Bakelite Co., Ltd. | Epoxy resin composition and structure |
US9865570B1 (en) * | 2017-02-14 | 2018-01-09 | Globalfoundries Inc. | Integrated circuit package with thermally conductive pillar |
JP7066975B2 (ja) * | 2017-03-10 | 2022-05-16 | 味の素株式会社 | 樹脂組成物、樹脂シート、回路基板及び半導体チップパッケージ |
TWI751331B (zh) * | 2017-05-10 | 2022-01-01 | 日商三井化學股份有限公司 | 半導體裝置的製造方法以及半導體裝置的中間體 |
CN109300794B (zh) * | 2017-07-25 | 2021-02-02 | 中芯国际集成电路制造(上海)有限公司 | 封装结构及其形成方法 |
JP6781677B2 (ja) * | 2017-08-01 | 2020-11-04 | 芝浦メカトロニクス株式会社 | 電子部品の実装装置と実装方法、およびパッケージ部品の製造方法 |
EP3706164A4 (en) * | 2017-10-31 | 2021-08-11 | Nagase ChemteX Corporation | PROCESS FOR PRODUCING A PACKAGING STRUCTURE AND SHEET USED THEREIN |
KR20200081336A (ko) | 2017-11-17 | 2020-07-07 | 린텍 가부시키가이샤 | 수지 시트 |
JP6934638B2 (ja) * | 2017-12-21 | 2021-09-15 | パナソニックIpマネジメント株式会社 | 半導体パッケージ及びプリント回路板 |
WO2019235217A1 (ja) * | 2018-06-08 | 2019-12-12 | リンテック株式会社 | 硬化封止体の製造方法 |
CN109135191B (zh) * | 2018-08-14 | 2020-04-07 | 苏州德林泰精工科技有限公司 | 一种用于芯片堆叠封装的树脂垫片及其制备方法 |
JP7221046B2 (ja) * | 2018-12-26 | 2023-02-13 | 東京応化工業株式会社 | 接着剤組成物、積層体、積層体の製造方法、及び電子部品の製造方法 |
KR102516291B1 (ko) * | 2020-06-30 | 2023-03-31 | (주)이녹스첨단소재 | 전자장치 제조용 절연필름 |
JPWO2022190898A1 (ja) * | 2021-03-11 | 2022-09-15 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05267371A (ja) * | 1992-03-19 | 1993-10-15 | Hitachi Ltd | 樹脂封止型半導体装置 |
JP2005060584A (ja) * | 2003-08-18 | 2005-03-10 | Hitachi Chem Co Ltd | 封止用フィルム |
JP2006241449A (ja) * | 2005-02-07 | 2006-09-14 | San Nopco Ltd | 熱硬化性樹脂組成物 |
WO2006103962A1 (ja) * | 2005-03-25 | 2006-10-05 | Sumitomo Bakelite Co., Ltd. | 半導体装置、並びにバッファーコート用樹脂組成物、ダイボンド用樹脂組成物、及び封止用樹脂組成物 |
JP2012227441A (ja) * | 2011-04-21 | 2012-11-15 | Sumitomo Bakelite Co Ltd | 半導体装置の製造方法および半導体装置 |
JP2013168541A (ja) * | 2012-02-16 | 2013-08-29 | Fujitsu Ltd | 半導体装置の製造方法及び電子装置の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4038363B2 (ja) | 2000-12-25 | 2008-01-23 | 日本特殊陶業株式会社 | 配線基板 |
US7145254B2 (en) * | 2001-07-26 | 2006-12-05 | Denso Corporation | Transfer-molded power device and method for manufacturing transfer-molded power device |
JP2005302971A (ja) * | 2004-04-09 | 2005-10-27 | Toshiba Corp | 半導体チップ実装体の製造方法、半導体チップ実装体 |
JP4730652B2 (ja) | 2004-06-02 | 2011-07-20 | ナガセケムテックス株式会社 | 電子部品の製造方法 |
US20080012124A1 (en) * | 2006-05-16 | 2008-01-17 | Stapleton Russell A | Curable protectant for electronic assemblies |
CN101558490A (zh) * | 2006-12-05 | 2009-10-14 | 住友电木株式会社 | 半导体封装件、芯层材料、积层材料及密封树脂组合物 |
CN103295992A (zh) * | 2008-10-10 | 2013-09-11 | 住友电木株式会社 | 半导体装置 |
WO2011115159A1 (ja) * | 2010-03-19 | 2011-09-22 | 積水化学工業株式会社 | 硬化性組成物、ダイシング-ダイボンディングテープ、接続構造体及び粘接着剤層付き半導体チップの製造方法 |
-
2014
- 2014-08-20 JP JP2014167223A patent/JP6320239B2/ja active Active
- 2014-09-09 US US15/023,501 patent/US9659883B2/en not_active Expired - Fee Related
- 2014-09-09 KR KR1020167009342A patent/KR20160060073A/ko not_active Application Discontinuation
- 2014-09-09 WO PCT/JP2014/073755 patent/WO2015045846A1/ja active Application Filing
- 2014-09-09 SG SG11201602233PA patent/SG11201602233PA/en unknown
- 2014-09-09 CN CN201480051887.5A patent/CN105555848B/zh active Active
- 2014-09-18 TW TW103132303A patent/TW201516122A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05267371A (ja) * | 1992-03-19 | 1993-10-15 | Hitachi Ltd | 樹脂封止型半導体装置 |
JP2005060584A (ja) * | 2003-08-18 | 2005-03-10 | Hitachi Chem Co Ltd | 封止用フィルム |
JP2006241449A (ja) * | 2005-02-07 | 2006-09-14 | San Nopco Ltd | 熱硬化性樹脂組成物 |
WO2006103962A1 (ja) * | 2005-03-25 | 2006-10-05 | Sumitomo Bakelite Co., Ltd. | 半導体装置、並びにバッファーコート用樹脂組成物、ダイボンド用樹脂組成物、及び封止用樹脂組成物 |
JP2012227441A (ja) * | 2011-04-21 | 2012-11-15 | Sumitomo Bakelite Co Ltd | 半導体装置の製造方法および半導体装置 |
JP2013168541A (ja) * | 2012-02-16 | 2013-08-29 | Fujitsu Ltd | 半導体装置の製造方法及び電子装置の製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220017794A1 (en) * | 2018-12-27 | 2022-01-20 | Doosan Corporation | Non-conductive adhesive film for semiconductor package and semiconductor package manufacturing method using same |
WO2020170847A1 (ja) * | 2019-02-21 | 2020-08-27 | パナソニックIpマネジメント株式会社 | 半導体封止材料及び半導体装置 |
JPWO2020170847A1 (ja) * | 2019-02-21 | 2021-12-23 | パナソニックIpマネジメント株式会社 | 半導体封止材料及び半導体装置 |
JP7289108B2 (ja) | 2019-02-21 | 2023-06-09 | パナソニックIpマネジメント株式会社 | 半導体封止材料及び半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN105555848A (zh) | 2016-05-04 |
US20160211228A1 (en) | 2016-07-21 |
SG11201602233PA (en) | 2016-05-30 |
US9659883B2 (en) | 2017-05-23 |
TW201516122A (zh) | 2015-05-01 |
KR20160060073A (ko) | 2016-05-27 |
JP2015086359A (ja) | 2015-05-07 |
CN105555848B (zh) | 2019-04-23 |
JP6320239B2 (ja) | 2018-05-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6320239B2 (ja) | 半導体チップ封止用熱硬化性樹脂シート及び半導体パッケージの製造方法 | |
JP6259608B2 (ja) | 電子デバイス封止用樹脂シート及び電子デバイスパッケージの製造方法 | |
JP6431340B2 (ja) | 封止用熱硬化性樹脂シート及び中空パッケージの製造方法 | |
US20170032979A1 (en) | Production method for semiconductor package | |
WO2015098833A1 (ja) | 半導体パッケージの製造方法 | |
WO2014136720A1 (ja) | 半導体装置の製造方法及び熱硬化性樹脂シート | |
JP5735029B2 (ja) | 電子デバイス封止用樹脂シート及び電子デバイスパッケージの製造方法 | |
WO2015098835A1 (ja) | 半導体パッケージの製造方法 | |
TWI543312B (zh) | Method for manufacturing parts for laminated bodies and power semiconductor modules | |
WO2015019770A1 (ja) | 電子デバイス封止用樹脂シート及び電子デバイスパッケージの製造方法 | |
WO2016072236A1 (ja) | 樹脂組成物、半導体装置の製造方法及び半導体装置 | |
WO2015098838A1 (ja) | 半導体装置の製造方法及び熱硬化性樹脂シート | |
WO2015190389A1 (ja) | 電子デバイス装置の製造方法 | |
WO2015190388A1 (ja) | 封止用樹脂シート | |
JP2016204545A (ja) | 封止用樹脂シート、及び、電子デバイス装置 | |
JP6533399B2 (ja) | 封止用シートおよびパッケージの製造方法 | |
WO2016080117A1 (ja) | セパレータ付き封止用シート、及び、半導体装置の製造方法 | |
JP2023095435A (ja) | 封止用シートおよび電子素子装置 | |
JP5735030B2 (ja) | 電子デバイス封止用樹脂シート及び電子デバイスパッケージの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201480051887.5 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14847657 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15023501 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20167009342 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 14847657 Country of ref document: EP Kind code of ref document: A1 |