JP2015073000A - 成膜装置及び成膜方法 - Google Patents
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
- C23C16/466—Cooling of the substrate using thermal contact gas
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Abstract
【解決手段】成膜装置は、基板上に成膜を行う成膜室と、前記成膜室の側壁内側に設けられる円筒型のライナと、前記成膜室の上部に設けられ、前記ライナの内側にプロセスガスを供給する第1ガス噴出孔を有するプロセスガス供給部と、前記成膜室内で前記ライナの外側に設けられ、前記基板を上方から加熱する第1ヒータと、前記基板を下方から加熱する第2ヒータと、前記第1ガス噴出孔よりも前記成膜室の側壁側にシールドガスを供給する複数の第2ガス噴出孔を有するシールドガス供給部と、を備える。
【選択図】図1
Description
101 基板
103 チャンバ
103a 側壁(内壁)
124 シャワープレート
129 ガス噴出孔
150 噴き出し部
151 ガス噴出孔
Claims (8)
- 基板上に成膜を行う成膜室と、
前記成膜室の側壁内側に設けられる円筒型のライナと、
前記成膜室の上部に設けられ、前記ライナの内側にプロセスガスを供給する第1ガス噴出孔を有するプロセスガス供給部と、
前記成膜室内で前記ライナの外側に設けられ、前記基板を上方から加熱する第1ヒータと、
前記基板を下方から加熱する第2ヒータと、
前記第1ガス噴出孔よりも前記成膜室の側壁側にシールドガスを供給する複数の第2ガス噴出孔を有するシールドガス供給部と、
を備える成膜装置。 - 前記シールドガスは、水素ガス、アルゴンガス、及びヘリウムガスのうち少なくとも一種のガスからなることを特徴とする請求項1に記載の成膜装置。
- 前記シールドガスを切り替えて供給するガス切替部をさらに備え、
前記ガス切替部は、前記成膜室内の昇温時にアルゴンガスを供給し、前記成膜室内の冷却時に水素ガス及びヘリウムガスのうち少なくとも一種を供給することを特徴とする請求項1又は請求項2に記載の成膜装置。 - 前記プロセスガス供給部は、水平方向に配置され、複数の前記第1ガス噴出孔と接続される複数のガス流路を有するシャワープレートを備えることを特徴とする請求項1乃至3のいずれか1項に記載の成膜装置。
- 前記プロセスガス供給部は、SiCソースガス、又はエッチングガスを含むガスを供給することを特徴とする請求項1乃至4のいずれか1項に記載の成膜装置。
- 成膜室内にSiC基板を搬入し、
前記成膜室の上部に設けられたシャワープレートを介して、前記成膜室内に、SiCソースガスを含むプロセスガスを供給して、前記SiC基板上への成膜を行い、
前記シャワープレートよりも前記成膜室の側壁側にシールドガスを噴き出すことを特徴とする成膜方法。 - 前記シールドガスは、水素ガス、アルゴンガス、及びヘリウムガスのうち少なくとも一種のガスからなることを特徴とする請求項6に記載の成膜方法。
- 前記シールドガスとして、前記成膜室内の昇温時にアルゴンガスを供給し、前記成膜室内の冷却時に水素ガス及びヘリウムガスのうち少なくとも一種を供給することを特徴とする請求項6又は請求項7に記載の成膜方法。
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JP2013207534A JP6158025B2 (ja) | 2013-10-02 | 2013-10-02 | 成膜装置及び成膜方法 |
US14/473,157 US9518322B2 (en) | 2013-10-02 | 2014-08-29 | Film formation apparatus and film formation method |
TW103132791A TWI583822B (zh) | 2013-10-02 | 2014-09-23 | Film forming apparatus and film forming method |
KR1020140128969A KR101758433B1 (ko) | 2013-10-02 | 2014-09-26 | 성막 장치 및 성막 방법 |
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JP2013207534A JP6158025B2 (ja) | 2013-10-02 | 2013-10-02 | 成膜装置及び成膜方法 |
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JP2015073000A true JP2015073000A (ja) | 2015-04-16 |
JP6158025B2 JP6158025B2 (ja) | 2017-07-05 |
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JP (1) | JP6158025B2 (ja) |
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Cited By (4)
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WO2019044440A1 (ja) * | 2017-09-01 | 2019-03-07 | 株式会社ニューフレアテクノロジー | 気相成長装置、及び、気相成長方法 |
US10287684B2 (en) * | 2014-07-08 | 2019-05-14 | Kokusai Electric Corporation | Substrate processing apparatus |
JP2020031200A (ja) * | 2018-08-24 | 2020-02-27 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
JP7439056B2 (ja) | 2018-09-07 | 2024-02-27 | アイクストロン、エスイー | Cvdリアクタの設定又は稼動方法 |
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US10157755B2 (en) * | 2015-10-01 | 2018-12-18 | Lam Research Corporation | Purge and pumping structures arranged beneath substrate plane to reduce defects |
DE102017203255B4 (de) | 2016-03-02 | 2024-06-13 | Veeco Instruments Inc. | Reaktor zur Verwendung bei einem System einer chemischen Dampfabscheidung und Verfahren zum Betreiben eines Systems einer chemischen Dampfabscheidung |
JP6789774B2 (ja) * | 2016-11-16 | 2020-11-25 | 株式会社ニューフレアテクノロジー | 成膜装置 |
US20210071296A1 (en) * | 2019-09-06 | 2021-03-11 | Asm Ip Holding B.V. | Exhaust component cleaning method and substrate processing apparatus including exhaust component |
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US20220134359A1 (en) * | 2020-10-30 | 2022-05-05 | Kabushiki Kaisha Toshiba | Rectifying plate, fluid-introducing apparatus, and film-forming apparatus |
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US9518322B2 (en) | 2016-12-13 |
KR20150039560A (ko) | 2015-04-10 |
JP6158025B2 (ja) | 2017-07-05 |
TWI583822B (zh) | 2017-05-21 |
KR101758433B1 (ko) | 2017-07-14 |
US20150090693A1 (en) | 2015-04-02 |
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