WO2019044440A1 - 気相成長装置、及び、気相成長方法 - Google Patents
気相成長装置、及び、気相成長方法 Download PDFInfo
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- WO2019044440A1 WO2019044440A1 PCT/JP2018/029783 JP2018029783W WO2019044440A1 WO 2019044440 A1 WO2019044440 A1 WO 2019044440A1 JP 2018029783 W JP2018029783 W JP 2018029783W WO 2019044440 A1 WO2019044440 A1 WO 2019044440A1
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- 238000000034 method Methods 0.000 title claims abstract description 339
- 238000001947 vapour-phase growth Methods 0.000 title claims abstract description 74
- 230000008569 process Effects 0.000 claims abstract description 282
- 239000000758 substrate Substances 0.000 claims abstract description 103
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 89
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 89
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 76
- 239000010703 silicon Substances 0.000 claims abstract description 75
- 230000007246 mechanism Effects 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 claims description 478
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 144
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 78
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 75
- 239000012535 impurity Substances 0.000 claims description 69
- 229910052757 nitrogen Inorganic materials 0.000 claims description 69
- 230000002093 peripheral effect Effects 0.000 claims description 52
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 238000007740 vapor deposition Methods 0.000 claims description 22
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 7
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 238000002347 injection Methods 0.000 description 54
- 239000007924 injection Substances 0.000 description 54
- 239000013078 crystal Substances 0.000 description 33
- 238000009826 distribution Methods 0.000 description 32
- 239000002019 doping agent Substances 0.000 description 19
- 239000012159 carrier gas Substances 0.000 description 17
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 16
- 230000007423 decrease Effects 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 229910001873 dinitrogen Inorganic materials 0.000 description 8
- 239000001294 propane Substances 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000005484 gravity Effects 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000003779 heat-resistant material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/68—Crystals with laminate structure, e.g. "superlattices"
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02573—Conductivity type
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
Definitions
- the present invention relates to a vapor phase growth apparatus that supplies a gas to form a film, and a vapor phase growth method.
- a method of forming a high quality semiconductor film there is an epitaxial growth technique of growing a single crystal film on a substrate such as a wafer by vapor phase growth.
- a wafer is mounted on a substrate holding unit in a reaction chamber held at normal pressure or reduced pressure.
- a process gas such as a source gas as a raw material for film formation is supplied from the upper part of the reaction chamber to the wafer surface in the reaction chamber.
- a thermal reaction of the source gas occurs on the wafer surface, and an epitaxial single crystal film is formed on the wafer surface.
- An impurity serving as a dopant may be introduced into the epitaxial single crystal film.
- an impurity serving as a dopant may be introduced into the epitaxial single crystal film.
- Patent Document 1 discloses that when forming an epitaxial single crystal film of silicon carbide (SiC), C (carbon) / Si (silicon) different in the central portion and the outer peripheral portion of the substrate in order to make the concentration distribution of impurities uniform. A method of supplying a ratio of process gas is described.
- the problem to be solved by the present invention is to provide a vapor phase growth apparatus and a vapor phase growth method capable of improving the uniformity of the concentration distribution of impurities in a film.
- a vapor deposition apparatus is provided in a reaction chamber and the reaction chamber, and a substrate can be mounted thereon, and a holding wall capable of holding the outer periphery of the substrate with a predetermined gap.
- a first region provided on the reaction chamber and capable of supplying a first process gas to the reaction chamber; and a first process provided on the periphery of the first region.
- a second region capable of supplying a second process gas having a carbon / silicon atomic ratio higher than that of the gas to the reaction chamber, wherein an inner circumferential diameter of the second region is 75% of a diameter of the holding wall Provided in a region between the process gas supply unit and the substrate holding unit in the reaction chamber, wherein the process gas supply unit having a percentage of 130% or less and the inner peripheral diameter is the outer peripheral diameter of the second region Side wall which is at least 110% and at most 200% of the And comprising a first heater and a second heater provided between the side wall and the inner wall of the reaction chamber, and a rotation drive mechanism for rotating the substrate holder.
- the inner circumferential diameter of the second region is preferably 100% or more of the diameter of the holding wall.
- the inner circumferential diameter of the side wall is preferably 105% or more and 200% or less of the diameter of the substrate holding unit.
- the rotary drive mechanism preferably rotates the substrate at a rotational speed of 300 rpm or more and 3000 rpm or less.
- the process gas supply unit is provided around the second region, and can supply a third process gas to the region between the sidewall and the second heater. It is preferable that the side wall has a third region, and the side wall has a gas passage hole that allows the third process gas to pass from the outside of the side wall to the inside of the side wall.
- the third process gas is preferably argon gas.
- a substrate is rotated at a rotational speed of 300 rpm or more, the substrate is heated, and a first process gas is supplied toward the substrate at a first flow rate.
- the flow velocity, the second flow velocity, and the rotational velocity are controlled to form a flow in which the second process gas is drawn toward the center of the substrate, thereby forming a silicon carbide film on the surface of the substrate.
- a substrate is rotated at a rotational speed of 300 rpm or more, the substrate is heated, and carbon, silicon, and n-type impurities are directed to the substrate. And supplying carbon, silicon, and n-type impurities in a region outside the region where the first process gas is supplied toward the substrate, and the first process gas is supplied to the substrate. And supplying a second process gas having a high carbon / silicon atomic ratio to the surface of the substrate while the effective carbon / silicon atomic ratio of the process gas directly above the surface of the substrate is less than one.
- a third process gas containing carbon, silicon and n-type impurities is supplied to the substrate, and the third process gas is supplied to the substrate Area outside the area
- a second silicon carbide film having an n-type impurity concentration lower than that of the first silicon carbide film is formed on the surface of the substrate in a state where the carbon / silicon atomic ratio is 1 or more.
- a vapor phase growth apparatus and a vapor phase growth method capable of improving the uniformity of the concentration distribution of impurities in a film.
- FIG. 6 is a schematic cross-sectional view showing another specific example of the process gas supply unit of the first embodiment. Explanatory drawing of the dimension of the member of the vapor phase growth apparatus of 1st Embodiment. Explanatory drawing of the flow in the reaction chamber of the process gas of the vapor phase growth method of 1st Embodiment. Explanatory drawing of the problem at the time of forming a SiC film.
- FIG. 6 is a view showing the relationship between the parameters of the vapor phase growth method of the first embodiment and the distribution of impurity concentration in the wafer surface.
- the gravity direction in the state where the vapor deposition apparatus is installed so as to be able to form a film is defined as “down”, and the opposite direction is defined as “up”. Therefore, “lower” means the position in the direction of gravity with respect to the reference, and “lower” means the direction of gravity with respect to the reference. And “upper part” means a position opposite to the gravity direction with respect to the reference, and “upper” means the opposite direction to the gravity direction with respect to the reference. Also, “longitudinal direction” is the direction of gravity.
- process gas is a general term for gases used for film formation on a substrate, and for example, source gas, assist gas, dopant gas, carrier gas, and mixtures thereof It is a concept that includes gas.
- the vapor phase growth apparatus is provided in a reaction chamber and a reaction chamber, has a holding wall which can hold a substrate and can hold the outer periphery of the substrate with a predetermined gap.
- a substrate holding portion a first region provided above the reaction chamber and capable of supplying a first process gas to the reaction chamber, and carbon / silicon provided around the first region and being higher than the first process gas
- a second region capable of supplying a second process gas having a high atomic ratio to the reaction chamber, wherein the inner peripheral diameter of the second region is 75% or more and 130% or less of the diameter of the holding wall
- a sidewall provided in an area between the process gas supply unit and the substrate holding unit in the reaction chamber and having an inner diameter of 110% or more and 200% or less of an outer diameter of the second region;
- a first heater provided below the holding portion, and a first heater provided between the side wall and the inner wall of the reaction chamber Comprising a heater, and a rotary drive mechanism for rotating the substrate holding portion.
- the substrate is rotated at a rotational speed of 300 rpm or more, the substrate is heated, the first process gas is supplied toward the substrate at the first flow rate, and the substrate is A second process gas having a carbon / silicon atomic ratio higher than the first process gas at a second flow rate in a region outside the first process gas,
- the flow rate of 2 and the rotational speed are controlled to form a flow in which the second process gas is drawn toward the center of the substrate to form a silicon carbide film on the surface of the substrate.
- FIG. 1 is a schematic cross-sectional view of the vapor phase growth apparatus of the first embodiment.
- the vapor phase growth apparatus 100 of the first embodiment is, for example, a single wafer type epitaxial growth apparatus for epitaxially growing a single crystal SiC film on a single crystal SiC substrate.
- the vapor phase growth apparatus 100 of the first embodiment includes a reaction chamber 10 and a process gas supply unit 12.
- the reaction chamber 10 includes a susceptor 14 (substrate holding unit), a rotating body 16, a rotating shaft 18, a rotation drive mechanism 20, a first heater 22, a reflector 28, a support column 30, a fixing base 32, a fixing shaft 34, a hood 40 ( Side wall, a second heater 42, and a gas outlet 44.
- the process gas supply unit 12 includes a first gas supply port 52, a second gas supply port 54, a first gas injection hole 56, and a second gas injection hole 58.
- the circular area where the first gas injection holes 56 of the process gas supply unit 12 are provided is the first area 12a
- the annular area where the second gas injection holes 58 are provided is the second area 12b. It is.
- the process gas supply unit 12 is provided on the reaction chamber 10.
- the process gas supply unit 12 has a function of supplying a process gas to the reaction chamber 10.
- the first gas supply port 52 and the second gas supply port 54 are provided in the upper part of the process gas supply unit 12.
- the first gas supply port 52 supplies, for example, the first process gas G1 into the process gas supply unit 12.
- the second gas supply port 54 supplies, for example, the second process gas G2 into the process gas supply unit 12.
- the first gas injection holes 56 and the second gas injection holes 58 are provided in the lower part of the process gas supply unit 12.
- the first gas injection holes 56 and the second gas injection holes 58 are provided to face the reaction chamber 10.
- the second gas injection holes 58 are provided around the first gas injection holes 56.
- the area where the first gas injection holes 56 of the process gas supply unit 12 are provided is the first area 12a, and the area where the second gas injection holes 58 are provided is the second area 12b. Therefore, the second area 12b is provided around the first area 12a.
- the first process gas G1 is supplied from the first gas injection holes 56 into the reaction chamber 10.
- the second process gas G2 is supplied into the reaction chamber 10 from the second gas injection holes 58.
- the first process gas G1 is supplied from the first region 12a into the reaction chamber 10
- the second process gas G2 is supplied from the second region 12b into the reaction chamber 10.
- the process gas supply unit 12 can supply process gases having different compositions to the central portion and the outer peripheral portion of the wafer W at different flow rates. ing.
- the flow velocity is determined by the flow rate of the gas introduced from the gas supply port or the flow rate of the gas passing through the gas injection holes divided by the cross-sectional area of the corresponding gas injection holes.
- the first process gas G1 is, for example, a mixture gas containing a source gas of silicon (Si), a source gas of carbon (C), a dopant gas of n-type impurities, an assist gas that suppresses clustering of silicon, and a carrier gas. It is a gas.
- the source gas of silicon is, for example, silane (SiH 4 ).
- the source gas of carbon is, for example, propane (C 3 H 8 ).
- the dopant gas of the n-type impurity is, for example, nitrogen gas.
- the assist gas is, for example, hydrogen chloride (HCl).
- the carrier gas is, for example, argon gas or hydrogen gas.
- the second process gas G2 is, for example, a mixed gas containing a silicon source gas, a carbon source gas, an n-type impurity dopant gas, an assist gas, and a carrier gas.
- the source gas of silicon is, for example, silane.
- the source gas of carbon is, for example, propane.
- the dopant gas of the n-type impurity is, for example, nitrogen gas.
- the assist gas is, for example, hydrogen chloride (HCl).
- the carrier gas is, for example, argon gas or hydrogen gas.
- the carbon / silicon atomic ratio (hereinafter also described as C / Si ratio) of the second process gas G2 is higher than the carbon / silicon atomic ratio of the first process gas G1.
- the ratio of the source gas of silicon contained in the second process gas G2 to the source gas of carbon is lower than the ratio of the source gas of silicon contained in the first process gas G1 to the source gas of carbon
- the C / Si ratio of the second process gas G2 is set to the first process gas G1 by not including the silicon source gas in the second process gas G2 and using only the carbon source gas as the source gas. It is possible to make it higher than the C / Si ratio of
- the respective process gases are all mixed to form the first process gas G1 and the second process gas G2. doing.
- the process gases may be mixed in the process gas supply unit 12 or may be mixed after being supplied to the reaction chamber 10.
- all or part of the silicon source gas, the carbon source gas, the dopant gas of n-type impurities, and the assist gas may be separated until being supplied to the reaction chamber 10.
- the first gas injection holes 56 it is possible to provide a plurality of types of gas injection holes as the first gas injection holes 56, and to supply different types of process gases from the respective gas injection holes.
- FIG. 2 is a schematic cross-sectional view showing another specific example of the process gas supply unit of the first embodiment.
- the process gas supply unit 72 includes a silicon source gas supply port 82, a carbon source gas supply port 84, a first separation chamber 83, a second separation chamber 85, a silicon source gas injection hole 86, and a carbon source gas injection. It has a hole 88.
- the silicon source gas and the carbon source gas are mixed in the reaction chamber 10 after being supplied.
- the C / Si ratio introduced into the reaction chamber 10 can be changed by adjusting the flow rate of the gas supplied to the source gas injection holes 88 of carbon and the source gas injection holes 86 of silicon. It is possible. Further, by changing the density (the number of gas injection holes per unit area) of the source gas injection holes 88 of carbon and the source gas injection holes 86 of silicon in the first region 12a and the second region 12b, the first It is possible to change the C / Si ratio in the region 12a and the second region 12b (make the C / Si ratio of the second region 12b higher than the C / Si ratio of the first region 12a).
- the cross-sectional area of the silicon source gas injection holes 86 of the carbon source gas injection holes 88 in the first area 12 a and the second area 12 b is adjusted to make the first areas 12 a and the second It is possible to change the C / Si ratio in the region 12b (make the C / Si ratio in the second region 12b higher than the C / Si ratio in the first region 12a).
- the reaction chamber 10 is made of, for example, stainless steel.
- the reaction chamber 10 has a cylindrical inner wall 10a.
- a SiC film is formed on the wafer W.
- the susceptor 14 is provided inside the reaction chamber 10.
- a wafer W which is an example of a substrate, can be mounted on the susceptor 14.
- the susceptor 14 may have an opening at its center.
- the susceptor 14 has a holding wall 14 a that can hold the outer periphery of the wafer W with a predetermined gap.
- the holding wall 14 a suppresses the horizontal movement of the wafer W.
- the difference between the diameter of the holding wall 14a and the diameter of the wafer W is, for example, 3 mm or less.
- the susceptor 14 is formed of, for example, a highly heat resistant material such as SiC or carbon or carbon coated with SiC or TaC.
- the susceptor 14 is fixed to the top of the rotating body 16.
- the rotating body 16 is fixed to the rotating shaft 18.
- the susceptor 14 is indirectly fixed to the rotating shaft 18.
- the rotation shaft 18 is rotatable by the rotation drive mechanism 20.
- the rotation drive mechanism 20 can rotate the susceptor 14 by rotating the rotation shaft 18.
- the wafer W placed on the susceptor 14 can be rotated by rotating the susceptor 14.
- the wafer W is rotated at a rotational speed of 300 rpm or more and 3000 rpm or less.
- the rotation drive mechanism 20 is configured of, for example, a motor and a bearing.
- the first heater 22 is provided below the susceptor 14.
- the first heater 22 is provided in the rotating body 16.
- the first heater 22 heats the wafer W held by the susceptor 14 from below.
- the first heater 22 is, for example, a resistance heater.
- the first heater 22 is, for example, a disk-shaped to which a comb-shaped pattern is applied.
- the reflector 28 is provided below the first heater 22.
- a first heater 22 is provided between the reflector 28 and the susceptor 14.
- the reflector 28 reflects the heat radiated downward from the first heater 22 to improve the heating efficiency of the wafer W. Also, the reflector 28 prevents the members below the reflector 28 from being heated.
- the reflector 28 has, for example, a disk shape.
- the reflector 28 is formed of, for example, a highly heat resistant material such as carbon coated with SiC.
- the reflector 28 is fixed to the fixed base 32 by, for example, a plurality of support posts 30.
- the fixed base 32 is supported by, for example, a fixed shaft 34.
- a push-up pin (not shown) is provided in the rotating body 16 in order to detach the susceptor 14 from the rotating body 16.
- the push-up pin penetrates, for example, the reflector 28 and the first heater 22.
- the second heater 42 is provided between the hood 40 and the inner wall 10 a of the reaction chamber 10.
- the second heater 42 heats the wafer W held by the susceptor 14 from above.
- the second heater 42 is, for example, a resistance heater.
- the hood 40 is provided in an area between the process gas supply unit 12 and the susceptor 14 in the reaction chamber 10.
- the hood 40 is, for example, cylindrical.
- the hood 40 has a function of preventing the first process gas G1 and the second process gas G2 from coming into contact with the second heater 42.
- the hood 40 is formed of, for example, a highly heat resistant material such as carbon coated with SiC.
- the gas outlet 44 is provided at the bottom of the reaction chamber 10.
- the gas discharge port 44 discharges the excess reaction product after the source gas has reacted on the surface of the wafer W and the excess process gas to the outside of the reaction chamber 10.
- the gas discharge port 44 is connected to, for example, a vacuum pump (not shown).
- reaction chamber 10 is provided with a wafer inlet / outlet and a gate valve (not shown).
- the wafer W can be carried into the reaction chamber 10 or carried out of the reaction chamber 10 by the wafer inlet / outlet and the gate valve.
- FIG. 3 is an explanatory view of dimensions of members of the vapor phase growth apparatus of the first embodiment.
- FIG. 3 shows a part of the process gas supply unit 12, the hood 40, the susceptor 14, and the wafer W mounted on the susceptor 14.
- the upper view of FIG. 3 is a sectional view, and the lower view is a plan view.
- the first area 12a and the second area 12b are hatched.
- the wafer W in which the orientation flat and the notch are omitted is indicated by a dotted line.
- the inner circumferential diameter of the second region 12b is d1.
- the inner circumferential diameter of the second region 12 b is defined by the diameter of a circle inscribed in the innermost injection hole of the second gas injection holes 58.
- the outer peripheral diameter of the second region 12b is d2.
- the outer peripheral diameter of the second region 12 b is defined by the diameter of a circle circumscribed to the outermost one of the second gas ejection holes 58.
- the diameter of the holding wall 14a of the susceptor 14 is d3.
- the diameter of the susceptor 14 is d4.
- the inner circumferential diameter of the hood 40 is d5.
- the inner circumferential diameter d1 of the second region 12b is 75% or more and 130% or less of the diameter d3 of the holding wall 14a.
- the outer peripheral diameter d2 of the second region 12b is, for example, larger than the diameter d3 of the holding wall 14a.
- the inner diameter d5 of the hood 40 is 110% or more and 200% or less of the outer diameter d2 of the second region 12b.
- the inner diameter d5 of the hood 40 is preferably 105% or more and 200% or less of the diameter d4 of the susceptor 14.
- the vapor phase growth method of the first embodiment uses the epitaxial growth apparatus shown in FIG. A case where a single crystal SiC film doped with nitrogen as an n-type impurity is formed on the surface of a single crystal SiC wafer will be described as an example.
- Wafer W is single crystal SiC.
- the wafer W is rotated by the rotation drive mechanism 20 at a rotational speed of 300 rpm or more. Then, the wafer W is heated by the first heater 22 and the second heater 42.
- the first process gas G1 is supplied from the first region 12a of the process gas supply unit 12 toward the central portion of the surface of the wafer W at a first flow rate.
- the first process gas G1 ejected from the first gas ejection holes 56 forms a laminar flow from the process gas supply unit 12 toward the surface of the wafer W.
- the second process gas G2 is supplied from the second area 12b of the process gas supply unit 12 at a second flow rate toward the area outside the central portion of the wafer W.
- the second process gas G2 is supplied to an area outside the wafer W than the first process gas G1.
- the second process gas G2 ejected from the second gas ejection holes 58 forms a laminar flow from the process gas supply unit 12 toward the surface of the wafer W.
- the first flow velocity and the second flow velocity are, for example, 0.2 m / sec or more and 1.0 m / sec or less.
- the first process gas G1 is, for example, a mixed gas containing a silicon source gas, a carbon source gas, an n-type impurity dopant gas, an assist gas, and a carrier gas.
- the source gas of silicon is, for example, silane (SiH 4 ).
- the source gas of carbon is, for example, propane (C 3 H 8 ).
- the dopant gas of the n-type impurity is, for example, nitrogen gas.
- the assist gas is, for example, hydrogen chloride (HCl) gas.
- the carrier gas is, for example, argon gas or hydrogen gas.
- the second process gas G2 is, for example, a mixed gas containing a silicon source gas, a carbon source gas, an n-type impurity dopant gas, and a carrier gas.
- the source gas of silicon is, for example, silane.
- the source gas of carbon is, for example, propane.
- the dopant gas of the n-type impurity is, for example, nitrogen gas.
- the carrier gas is, for example, argon gas or hydrogen gas.
- the C / Si ratio of the second process gas G2 supplied from the process gas supply unit 12 to the reaction chamber 10 is higher than the C / Si ratio of the first process gas G1.
- a single crystal SiC film doped with nitrogen which is an n-type impurity, is formed on the surface of the wafer W.
- the second process is performed by controlling the first flow rate of the first process gas G1, the second flow rate of the second process gas G2, and the rotation speed of the wafer W.
- the gas G2 is controlled to form a flow drawn toward the center of the wafer W.
- the first flow rate can be controlled, for example, by changing the flow rate of the process gas supplied to the first gas injection holes 56 with a mass flow controller (not shown).
- the second flow velocity can be controlled, for example, by changing the flow rate of the process gas supplied to the second gas injection holes 58 by a mass flow controller (not shown).
- the rotational speed of the wafer W can be controlled by the rotational drive mechanism 20.
- FIG. 4 is an explanatory view of the flow of the process gas in the reaction chamber of the vapor phase growth method of the first embodiment.
- the first process gas G1 ejected as a laminar flow in the vertical direction from the first region 12a is a horizontal flow toward the outside of the wafer W on the surface of the wafer W It becomes.
- the second process gas G2 ejected from the second region 12b as a laminar flow in the vertical direction flows so as to be drawn toward the center of the wafer W, and then horizontally on the surface of the wafer W toward the outside of the wafer W It becomes a flow of direction.
- the direction of flow of the second process gas G2 has a component directed toward the center of the wafer W before reaching the surface of the wafer W.
- the heating by the first heater 22 and the second heater 42 is stopped to lower the temperature of the wafer W. Thereafter, the wafer W is unloaded from the reaction chamber 10 together with the susceptor 14.
- FIG. 5 is an explanatory view of a problem when forming a SiC film.
- FIG. 5 shows the in-plane distribution of the impurity concentration when a SiC film doped with nitrogen as an n-type impurity is formed on a wafer.
- the concentration of nitrogen in the SiC film becomes high at the outer peripheral portion of the wafer W.
- the concentration distribution of n-type impurities in the SiC film becomes nonuniform, and the in-plane resistance distribution of the wafer W becomes nonuniform.
- Silicon sublimated from the deposit containing silicon adhering to the surface of the susceptor 14 outside the wafer W mixes in the process gas of the outer periphery of the wafer W as a factor contributing to the increase of nitrogen concentration in the outer periphery of the wafer W It is conceivable.
- the C / Si ratio in the process gas supplied to the outer peripheral portion of the wafer W becomes low. Nitrogen is incorporated into the crystal by entering a carbon lattice position in the SiC crystal. For this reason, when the C / Si ratio in the process gas is low, carbon is reduced, and nitrogen easily enters the carbon lattice position in the SiC crystal. Therefore, the concentration of nitrogen in the outer peripheral portion is higher than that in the central portion of the wafer W.
- the second process gas G2 having a high C / Si ratio is supplied to the outer peripheral portion of the wafer W. Furthermore, the first flow velocity of the first process gas G1 supplied to the central portion of the wafer W, the second flow velocity of the second process gas G2 supplied to the outer peripheral portion of the wafer W, and the rotation speed of the wafer W By controlling, the uniformity of the concentration distribution of n-type impurities in the SiC film is improved.
- FIG. 6 is a view showing the relationship between the parameters of the vapor phase growth method of the first embodiment and the distribution of the impurity concentration in the wafer surface.
- 6 (a) shows the C / Si ratio of the second process gas G2 as the parameter
- FIG. 6 (b) shows the rotational speed of the wafer W as the parameter
- FIG. 6 (c) shows the second process gas as the parameter This is the case of the second flow rate of G2.
- the second process has a carbon / silicon atomic ratio higher than that of the first process gas G1 in a region outside the first process gas G1.
- Supply process gas G2. Then, by controlling the first flow velocity of the first process gas G1, the second flow velocity of the second process gas G2 supplied to the outer peripheral portion of the wafer W, and the rotation speed of the wafer W, the second A flow in which the process gas G2 is drawn in toward the center of the wafer W is formed to form a SiC film. Thereby, the uniformity of the concentration distribution of n-type impurities in the SiC film is improved.
- the concentration distribution of the second process gas G2 only by the C / Si ratio is obtained. It is possible to improve the uniformity of the impurity concentration distribution with higher accuracy than the adjustment.
- the inner diameter d1 of the second region 12b of the vapor deposition apparatus 100 is And 75% or more and 130% or less of the diameter d3 of the holding wall 14a. If the above range is exceeded, the impurity concentration in the central portion of the wafer W may be lowered, and the impurity concentration distribution may become nonuniform. If the above range is exceeded, the amount of drawing in of the second process gas G2 may be insufficient, and the concentration distribution of impurities may be uneven.
- the inner peripheral diameter d1 of the second region 12b is preferably 100% or more of the diameter d3 of the holding wall 14a from the viewpoint of suppressing the decrease in the impurity concentration in the central portion of the wafer W.
- the inner circumferential diameter d1 of the second region 12b is preferably less than 100% of the diameter d3 of the holding wall 14a from the viewpoint of suppressing the shortage of the amount of drawing of the second process gas G2.
- the flow of the second process gas G2 toward the center of the wafer W is realized, and the impurity concentration distribution with high uniformity is realized, the inside of the hood 40
- the circumferential diameter d5 needs to be 110% or more and 200% or less of the outer circumferential diameter d2 of the second region 12b, and preferably 110% or more and 150% or less. Below the above range, the laminar flow of the second process gas G2 in the vertical direction may be disturbed by the influence of the hood 40. When the above range is exceeded, the second process gas G2 flows toward the hood 40, and it becomes difficult to realize the flow of the second process gas G2 toward the center of the wafer W.
- the inner circumferential diameter d5 of the hood 40 is equal to the diameter d4 of the susceptor 14 And 105% or more and 200% or less.
- the rotation speed of the wafer W needs to be 300 rpm or more. If the rotational speed is less than 300 rpm, the amount of drawing of the second process gas G2 toward the center of the wafer W may not be sufficient.
- first flow velocity and the second flow velocity are preferably 0.2 m / sec or more and 1.0 m / sec or less, and more preferably 0.2 m / sec or more and 0.5 m / sec or less. preferable.
- the first process gas G1 and the second process gas G2 are easily mixed, and the function of the first embodiment can not be exhibited. If the above range is exceeded, the flow of the second process gas G2 in the vertical direction becomes too fast, and the amount of drawing of the second process gas G2 toward the center of the wafer W may not be sufficient.
- the second flow rate of the second process gas G2 is 50% or more of the first flow rate of the first process gas G1. And 200% or less. From the viewpoint of increasing the drawing amount of the second process gas G2 toward the center of the wafer W, the second flow velocity of the second process gas G2 is smaller than the first flow velocity of the first process gas G1. It is preferable to do. Further, from the viewpoint of suppressing the drawing amount of the second process gas G2 toward the center of the wafer W, the second flow velocity of the second process gas G2 is higher than the first flow velocity of the first process gas G1. It is preferable to make the
- the uniformity of the concentration distribution of n-type impurities in the SiC film can be improved. It is possible. For example, in the case of reducing the diameter of the wafer W, it is preferable to reduce the inner peripheral diameter d1 of the second region 12b of the process gas supply unit 12 to increase the C / Si ratio of the outer peripheral part of the wafer W. It is not easy because the design change or replacement of the part 12 is necessary.
- FIG. 7 is an explanatory view of the flow of the process gas in the reaction chamber of the vapor phase growth method of the first embodiment.
- FIG. 7 shows the case where a film is formed on a wafer W having a diameter of about two thirds of the wafer W of FIG.
- the second process gas G2 toward the center of the wafer W is formed by increasing the rotational speed of the wafer W or reducing the second flow rate of the second process gas G2. It is possible to increase the amount of retraction. Therefore, even when the diameter of the wafer W changes, it is easy to improve the uniformity of the concentration distribution of n-type impurities in the SiC film.
- the uniformity of the concentration distribution of n-type impurities in the SiC film is improved.
- the vapor phase growth apparatus of the second embodiment is the same as that of the first embodiment except that the process gas supply unit further includes a third region, and a gas passage hole is provided on the side wall. Therefore, the contents overlapping with the first embodiment will not be partially described.
- FIG. 8 is a schematic cross-sectional view of the vapor phase growth apparatus of the second embodiment.
- the vapor phase growth apparatus of the second embodiment is, for example, a single wafer type epitaxial growth apparatus in which a single crystal SiC film is epitaxially grown on a single crystal SiC substrate.
- the vapor phase growth apparatus 200 of the second embodiment includes a reaction chamber 10 and a process gas supply unit 12.
- the reaction chamber 10 includes a susceptor 14 (substrate holding unit), a rotating body 16, a rotating shaft 18, a rotation drive mechanism 20, a first heater 22, a reflector 28, a support column 30, a fixing base 32, a fixing shaft 34, a hood 40 ( Side wall, a second heater 42, and a gas outlet 44.
- the process gas supply unit 12 includes a first gas supply port 52, a second gas supply port 54, a third gas supply port 55, a first gas injection hole 56, a second gas injection hole 58, and a third gas injection hole 58.
- a gas injection hole 59 is provided.
- the region where the first gas injection holes 56 of the process gas supply unit 12 are provided is the first region 12a
- the region where the second gas injection holes 58 are provided is the second region 12b
- the third The area in which the gas injection holes 59 are provided is the third area 12c.
- the first gas supply port 52, the second gas supply port 54, and the third gas supply port 55 are provided on the upper portion of the process gas supply unit 12.
- the first gas supply port 52 supplies, for example, the first process gas G1 into the process gas supply unit 12.
- the second gas supply port 54 supplies, for example, the second process gas G2 into the process gas supply unit 12.
- the third gas supply port 55 supplies, for example, the third process gas G3 into the process gas supply unit 12.
- the first gas injection holes 56, the second gas injection holes 58, and the third gas injection holes 59 are provided in the lower part of the process gas supply unit 12.
- the first gas injection holes 56, the second gas injection holes 58, and the third gas injection holes 59 are provided to face the reaction chamber 10.
- the second gas injection holes 58 are provided around the first gas injection holes 56.
- the third gas injection holes 59 are provided around the second gas injection holes 58.
- the region where the first gas injection holes 56 of the process gas supply unit 12 are provided is the first region 12a
- the region where the second gas injection holes 58 are provided is the second region 12b
- the third The area where the gas injection holes 59 are provided is the third area 12c.
- the third gas injection holes 59 supply the third process gas G3 to the region between the hood 40 and the second heater 42.
- the third process gas G3 is, for example, argon gas.
- the hood 40 has a gas passage hole 60.
- the gas passage hole 60 is provided to allow the third process gas G3 to pass from the second heater 42 side to the wafer W side.
- FIG. 9 is an explanatory view of the flow of the process gas in the reaction chamber of the vapor phase growth method of the second embodiment.
- the third process gas G3 passes through the gas passage holes 60 and flows to the wafer W side. Then, the flow of the second process gas can be pushed out toward the center of the wafer W by the flow of the third process gas G3. As a result, the amount of drawing of the second process gas G2 toward the center of the wafer W is increased.
- the vapor deposition apparatus of the second embodiment and the vapor deposition method it is possible to adjust the amount of drawing of the second process gas G2 toward the center of the wafer W by the third process gas G3. Become. Therefore, the uniformity of the concentration distribution of n-type impurities in the SiC film is further improved.
- the substrate is rotated at a rotational speed of 300 rpm or more, the substrate is heated, and the first process gas containing carbon, silicon, and the n-type impurity directed to the substrate.
- the substrate containing carbon and the n-type impurity in a region outside the region where the first process gas is supplied, and having a carbon / silicon atomic ratio than that of the first process gas.
- a first silicon carbide film is formed on the surface of the substrate while supplying a high second process gas and the effective carbon / silicon atomic ratio of the process gas directly above the surface of the substrate is less than 1; Supplying a third process gas containing carbon, silicon and the n-type impurity toward the substrate, carbon in a region outside the region where the third process gas is supplied toward the substrate, and A third of said n-type impurities
- the fourth process gas having a carbon / silicon atomic ratio higher than the process gas is supplied, and the first surface of the substrate is processed with the effective carbon / silicon atomic ratio of the process gas directly above the surface of the substrate being 1 or more.
- the vapor phase growth method of the third embodiment is characterized in that the first silicon carbide film and the second silicon carbide film having different n-type impurity concentrations are formed on the substrate. It is different from the phase growth method.
- the description overlapping with the vapor phase growth apparatus and the vapor phase growth method of the first embodiment will be partially omitted.
- the vapor deposition method of the third embodiment uses the epitaxial growth apparatus shown in FIG. Further, the vapor phase growth method of the third embodiment uses an epitaxial growth apparatus having a process gas supply unit shown in FIG.
- the case where the n-type impurity is nitrogen will be described as an example.
- FIG. 10 is a cross-sectional view of a silicon carbide film formed by the vapor deposition method of the third embodiment.
- a buffer film 501 first silicon carbide film
- an n-type film 502 second silicon carbide film
- the substrate 500 is a wafer of single crystal SiC.
- the substrate 500 contains nitrogen as an n-type impurity.
- the nitrogen concentration of the substrate 500 is, for example, 1 ⁇ 10 17 cm ⁇ 3 or more and 1 ⁇ 10 19 cm ⁇ 3 or less.
- the buffer film 501 is a single crystal SiC film.
- the buffer film 501 has a function of suppressing propagation of basal plane dislocation (BPD) included in the substrate 500 to the n-type film 502. During the growth of the buffer film 501, for example, basal plane dislocations are converted to other dislocations.
- BPD basal plane dislocation
- the buffer film 501 contains nitrogen as an n-type impurity.
- the nitrogen concentration of the buffer film 501 is, for example, 1 ⁇ 10 17 cm ⁇ 3 or more and 1 ⁇ 10 19 cm ⁇ 3 or less.
- the thickness of the buffer film 501 is, for example, 0.5 ⁇ m or more and 2 ⁇ m or less.
- the nitrogen concentration of the buffer film 501 is preferably 1 ⁇ 10 17 cm ⁇ 3 or more.
- the n-type film 502 is a single crystal SiC film.
- the n-type film 502 contains nitrogen as an n-type impurity.
- the nitrogen concentration of the n-type film 502 is, for example, not less than 1 ⁇ 10 14 cm ⁇ 3 and not more than 1 ⁇ 10 16 cm ⁇ 3 .
- the nitrogen concentration of the n-type film 502 is lower than the nitrogen concentration of the buffer film 501.
- the thickness of the n-type film 502 is, for example, 10 ⁇ m or more and 300 ⁇ m or less.
- the n-type film 502 is used, for example, as a drift layer of a high breakdown voltage device such as a transistor or a diode.
- the n-type film 502 preferably reduces the amount of carbon vacancies that work as a lifetime killer, from the viewpoint of prolonging the lifetime of minority carriers.
- the nitrogen concentration of the n-type film 502 is preferably 1 ⁇ 10 16 cm ⁇ 3 or less from the viewpoint of realizing a high breakdown voltage in the transistor or the diode.
- Wafer W is single crystal SiC.
- the wafer W is rotated by the rotation drive mechanism 20 at a rotational speed of 300 rpm or more. Then, the wafer W is heated by the first heater 22 and the second heater 42.
- the first process gas G1 is supplied from the first region 12a of the process gas supply unit 12 toward the central portion of the surface of the wafer W.
- the first process gas G1 ejected from the first gas ejection holes 56 forms a laminar flow from the process gas supply unit 12 toward the surface of the wafer W.
- the first process gas comprises carbon, silicon and nitrogen.
- the second process gas G2 is supplied from the second area 12b of the process gas supply unit 12 toward the area outside the central portion of the wafer W.
- the second process gas G2 is supplied to an area outside the wafer W than the first process gas G1.
- the second process gas G2 ejected from the second gas ejection holes 58 forms a laminar flow from the process gas supply unit 12 toward the surface of the wafer W.
- the second process gas contains carbon and nitrogen.
- the first process gas G1 is, for example, a mixed gas containing a silicon source gas, a carbon source gas, an n-type impurity dopant gas, an assist gas, and a carrier gas.
- the source gas of silicon is, for example, silane (SiH 4 ).
- the source gas of carbon is, for example, propane (C 3 H 8 ).
- the dopant gas of the n-type impurity is nitrogen gas.
- the assist gas is, for example, hydrogen chloride (HCl) gas.
- the carrier gas is, for example, argon gas or hydrogen gas.
- the second process gas G2 is, for example, a mixed gas containing a silicon source gas, a carbon source gas, an n-type impurity dopant gas, and a carrier gas.
- the source gas of silicon is, for example, silane.
- the source gas of carbon is, for example, propane.
- the dopant gas of the n-type impurity is nitrogen gas.
- the carrier gas is, for example, argon gas or hydrogen gas.
- the C / Si ratio of the second process gas G2 supplied from the process gas supply unit 12 to the reaction chamber 10 is higher than the C / Si ratio of the first process gas G1.
- a buffer film 501 containing nitrogen as an n-type impurity is formed on the surface of the wafer W.
- the nitrogen concentration of the buffer film 501 is, for example, 1 ⁇ 10 17 cm ⁇ 3 or more.
- the thickness of the buffer film 501 is, for example, 0.5 ⁇ m or more and 2 ⁇ m or less.
- the buffer film 501 is formed in a state in which the effective carbon / silicon atomic ratio of the process gas right above the surface of the wafer W is less than one.
- the effective carbon / silicon atomic ratio directly above the surface of the wafer W in the central portion of the wafer W and the region of the outer peripheral portion of the wafer W is less than one.
- the effective carbon / silicon atomic ratio is hereinafter referred to as "effective C / Si ratio".
- the wafer center portion means, for example, a region within 5 mm from the wafer W center.
- the wafer outer peripheral portion means, for example, a region 5 mm inside from the outer peripheral end of the wafer W.
- FIG. 11 is an explanatory view of the vapor phase growth method of the third embodiment.
- FIG. 11 is an explanatory view showing the relationship between the introduced C / Si ratio and the film growth rate of the SiC film on the substrate.
- the “introduced C / Si ratio” is the carbon / silicon atomic ratio of the process gas introduced into the process supply unit shown in FIG. More specifically, it is a carbon / silicon atomic ratio of silicon in the silicon source gas introduced into the source gas supply port 82 and carbon in the carbon source gas introduced into the source gas supply port 84.
- the amount of silicon in the source gas of silicon introduced into the source gas supply port 82 is fixed, and the amount of carbon in the source gas of carbon introduced into the source gas supply port 84 is changed to introduce C.
- the case where / Si ratio is changed is shown.
- the film growth rate saturates.
- the saturation point A at the wafer center is the position of the arrow A in FIG.
- the saturation point B of the wafer outer peripheral portion is the position of the arrow B in FIG.
- the process gas is controlled so that the C / Si ratio toward the wafer outer peripheral part is higher than the wafer central part. Therefore, the saturation point B of the wafer outer peripheral part However, the introduced C / Si ratio is lower than the saturation point A at the wafer center.
- the effective C / Si ratio is 1 or more at the introduced C / Si ratio above the saturation point A, and the effective C / Si ratio is less than 1 at the introduced C / Si ratio below the saturation point A.
- the effective C / Si ratio is 1 or more at the introduced C / Si ratio above the saturation point B, and the effective C / Si ratio is less than 1 at the introduced C / Si ratio below the saturation point B.
- the introduced C / Si ratio at or above the saturation point A is required.
- the introduced C / Si ratio less than the saturation point B is required.
- a third process gas is supplied from the first region 12 a of the process gas supply unit 12 toward the center of the surface of the wafer W.
- the third process gas ejected from the first gas ejection holes 56 forms a laminar flow from the process gas supply unit 12 toward the surface of the wafer W.
- the third process gas comprises carbon, silicon and nitrogen.
- the fourth process gas is supplied from the second area 12 b of the process gas supply unit 12 toward the area outside the center of the wafer W.
- the fourth process gas is supplied to an area outside the wafer W than the third process gas.
- the fourth process gas ejected from the second gas ejection holes 58 forms a laminar flow from the process gas supply unit 12 toward the surface of the wafer W.
- the fourth process gas contains carbon and nitrogen.
- the third process gas is, for example, a mixed gas containing a silicon source gas, a carbon source gas, an n-type impurity dopant gas, an assist gas, and a carrier gas.
- the source gas of silicon is, for example, silane.
- the source gas of carbon is, for example, propane.
- the dopant gas of the n-type impurity is nitrogen gas.
- the assist gas is, for example, hydrogen chloride gas.
- the carrier gas is, for example, argon gas or hydrogen gas.
- the fourth process gas is, for example, a mixed gas containing a silicon source gas, a carbon source gas, an n-type impurity dopant gas, and a carrier gas.
- the source gas of silicon is, for example, silane.
- the source gas of carbon is, for example, propane.
- the dopant gas of the n-type impurity is nitrogen gas.
- the carrier gas is, for example, argon gas or hydrogen gas.
- the C / Si ratio of the fourth process gas supplied from the process gas supply unit 12 to the reaction chamber 10 is higher than the C / Si ratio of the third process gas.
- an n-type film 502 containing nitrogen is formed on the surface of the wafer W.
- the nitrogen concentration of the n-type film 502 is, for example, 1 ⁇ 10 16 cm ⁇ 3 or less.
- the thickness of the n-type film 502 is, for example, 10 ⁇ m or more and 300 ⁇ m or less.
- the n-type film 502 is formed in a state where the effective carbon / silicon atomic ratio of the process gas directly above the surface of the wafer W, that is, the effective C / Si ratio is 1 or more.
- the effective C / Si ratio in the region of the process gas directly above the surface of the wafer W and 5 mm from the center of the wafer W and the outer periphery of the wafer W is 1 or more.
- the introduced C / Si ratio is set so that the effective C / Si ratio is 1 or more.
- the heating by the first heater 22 and the second heater 42 is stopped to lower the temperature of the wafer W. Thereafter, the wafer W is unloaded from the reaction chamber 10 together with the susceptor 14.
- FIG. 12 is an explanatory view of the operation and the effect of the vapor phase growth method of the third embodiment.
- FIG. 12 is a diagram showing the relationship between the introduced C / Si ratio and the distribution shape of the nitrogen concentration in the wafer W plane.
- FIG. 12 is a diagram qualitatively explaining only the shape change of the nitrogen concentration distribution between the conditions, and does not explain the change in the nitrogen concentration between the conditions.
- the nitrogen concentration in the outer peripheral portion of the wafer W is higher than the nitrogen concentration in the central portion of the wafer W.
- the ratio increases from low to medium to medium (introduced C / Si ratio) the nitrogen concentration in the outer peripheral portion of the wafer W decreases, and the nitrogen concentration distribution in the SiC film becomes uniform.
- the introduced C / Si ratio is increased to a high state the nitrogen concentration in the outer peripheral portion of the wafer W further decreases, and the uniformity of the nitrogen concentration distribution in the SiC film decreases.
- the introduced C / Si ratio is further increased to a very high state (introduced C / Si ratio ultra high)
- the in-plane effective C / Si ratio of the wafer W is sufficiently lower than 1. Further, at the introduced C / Si ratio high, the effective C / Si ratio at the central portion of the wafer W is sufficiently lower than 1, and the effective C / Si ratio at the outer peripheral portion of the wafer W is near 1. Furthermore, when the introduced C / Si ratio is extremely high, the in-plane effective C / Si ratio of the wafer W is in a state sufficiently higher than one.
- the reduction rate of the nitrogen concentration in the SiC film is large with the increase of the effective C / Si ratio, and in the region where the effective C / Si ratio is higher than 1, the effective C / Si ratio The decrease rate of nitrogen concentration in the SiC film becomes smaller with the increase of.
- the effective C / Si ratio of the outer peripheral part of the wafer W and the effective C / Si ratio of the central part of the wafer W are lower than the nitrogen concentration in the central portion of the wafer W because the rate of decrease in the nitrogen concentration in the SiC film is large with the increase of the effective C / Si ratio. It will be easier.
- the introduced C / Si ratio is increased from the introduced C / Si ratio high to the introduced C / Si ratio ultra high, the introduced C / Si ratio is slightly increased at the peripheral portion of the wafer W, and the effective C / Si is increased.
- the ratio exceeds 1 and the reduction rate of the nitrogen concentration in the SiC film decreases, the wafer C can not have the effective C / Si ratio above 1 unless the introduced C / Si ratio is significantly increased at the center of the wafer W.
- the nitrogen concentration in the central portion of the wafer W tends to be lower than the nitrogen concentration in the outer peripheral portion of the wafer W. For this reason, a change in the nitrogen concentration distribution shape in the SiC film as shown in FIG. 12 occurs.
- FIG. 13 is an explanatory view of the operation and the effect of the vapor phase growth method of the third embodiment.
- the measured values of the relationship between the introduced C / Si ratio and the film growth rate are shown.
- the saturation point A at the center of the wafer is at a position where the introduced C / Si ratio is about 1.65.
- the saturation point B of the wafer outer peripheral portion is at a position where the introduced C / Si ratio is about 1.5.
- the introduced C / Si ratio of the saturation point A or more that is, the introduced C / Si ratio of 1.65 or more is required.
- the introduced C / Si ratio less than the saturation point B that is, the introduced C / Si ratio less than 1.5 is required.
- FIG. 14 is an explanatory view of the operation and the effect of the vapor phase growth method of the third embodiment.
- FIG. 14 shows the nitrogen concentration distribution in the surface of the wafer W with the introduced C / Si ratio as a parameter under the same process conditions as FIG. The introduced C / Si ratio is varied between 1.20 and 1.95.
- FIG. 14 shows a measurement result using a wafer W having a diameter of 150 mm.
- the distribution of nitrogen concentration in the wafer W surface becomes uniform when the introduced C / Si ratio is 1.35 and the introduced C / Si ratio is 1.80 or more.
- Each corresponds to the case where the effective C / Si ratio is less than 1 and the case where the effective C / Si ratio is 1 or more.
- the effective C / Si ratio of the surface of the wafer W is set to less than 1 in the formation of the buffer film 501 having a high nitrogen concentration.
- the effective C / Si ratio of the surface of the wafer W is set to 1 or more. As a result, it is possible to form an n-type film 502 having a low nitrogen concentration and high in-plane uniformity of the wafer W in the nitrogen concentration.
- the effective C / Si ratio of the surface of the wafer W is 1 or more in the formation of the n-type film 502, it is possible to reduce the amount of carbon vacancies in the film. Since the effective C / Si ratio is 1 or more, excess carbon is present, so the generation of carbon vacancies in the film is suppressed.
- the vapor phase growth method of the third embodiment it is possible to form a silicon carbide film suitable for manufacturing high breakdown voltage devices such as transistors and diodes.
- a single crystal SiC wafer is described as an example of a substrate, but the substrate is not limited to a single crystal SiC wafer.
- the description is omitted for the device configuration, the manufacturing method, and the parts that are not directly required for the description of the present invention, but the required device configuration, the manufacturing method, and the like can be appropriately selected and used.
- all vapor deposition apparatuses, annular holders, and vapor deposition methods that include elements of the present invention and whose design can be modified as appropriate by those skilled in the art are included in the scope of the present invention. It is intended that the scope of the invention be defined by the claims appended hereto and their equivalents.
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Abstract
Description
第1の実施形態の気相成長装置は、反応室と、反応室の中に設けられ、基板が載置可能であり、基板の外周を所定の間隙を有して保持可能な保持壁を有する基板保持部と、反応室の上に設けられ、第1のプロセスガスを反応室に供給可能な第1の領域と、第1の領域の周囲に設けられ第1のプロセスガスよりも炭素/シリコン原子比の高い第2のプロセスガスを反応室に供給可能な第2の領域とを有し、第2の領域の内周直径が保持壁の直径の75%以上130%以下であるプロセスガス供給部と、反応室の中の、プロセスガス供給部と基板保持部との間の領域に設けられ、内周直径が第2の領域の外周直径の110%以上200%以下である側壁と、基板保持部の下に設けられた第1のヒータと、側壁と反応室の内壁との間に設けられた第2のヒータと、基板保持部を回転させる回転駆動機構と、を備える。
第2の実施形態の気相成長装置は、プロセスガス供給部が第3の領域を、更に有し、側壁にガス通過孔が設けられる点以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については一部記述を省略する。
第3の実施形態の気相成長方法は、基板を300rpm以上の回転速度で回転させ、基板を加熱し、基板に向けて、炭素、シリコン、及び、前記n型不純物を含む第1のプロセスガスを供給し、基板に向けて、第1のプロセスガスが供給される領域よりも外側の領域に、炭素、及び、前記n型不純物を含み、第1のプロセスガスよりも炭素/シリコン原子比の高い第2のプロセスガスを供給し、基板の表面の直上のプロセスガスの実効的な炭素/シリコン原子比が1未満となる状態で、基板の表面に第1の炭化珪素膜を形成し、基板に向けて、炭素、シリコン、及び、前記n型不純物を含む第3のプロセスガスを供給し、基板に向けて、第3のプロセスガスが供給される領域よりも外側の領域に、炭素、及び、前記n型不純物を含み、第3のプロセスガスよりも炭素/シリコン原子比の高い第4のプロセスガスを供給し、基板の表面の直上のプロセスガスの実効的な炭素/シリコン原子比が1以上となる状態で、基板の表面に第1の炭化珪素膜よりも前記n型不純物濃度の低い第2の炭化珪素膜を形成する。
10a 内壁
12 プロセスガス供給部
12a 第1の領域
12b 第2の領域
14 サセプタ(基板保持部)
14a 保持壁
20 回転駆動機構
22 第1のヒータ
40 フード(側壁)
42 第2のヒータ
100 気相成長装置
G1 第1のプロセスガス
G2 第2のプロセスガス
W ウェハ(基板)
d1 第2の領域の内周直径
d2 第2の領域の外周直径
d3 保持壁の直径
d5 フード(側壁)の内周直径
Claims (15)
- 反応室と、
前記反応室の中に設けられ、基板が載置可能であり、前記基板の外周を所定の間隙を有して保持可能な保持壁を有する基板保持部と、
前記反応室の上に設けられ、第1のプロセスガスを前記反応室に供給可能な第1の領域と、前記第1の領域の周囲に設けられ前記第1のプロセスガスよりも炭素/シリコン原子比の高い第2のプロセスガスを前記反応室に供給可能な第2の領域とを有し、前記第2の領域の内周直径が前記保持壁の直径の75%以上130%以下であるプロセスガス供給部と、
前記反応室の中の、前記プロセスガス供給部と前記基板保持部との間の領域に設けられ、内周直径が前記第2の領域の外周直径の110%以上200%以下である側壁と、
前記基板保持部の下に設けられた第1のヒータと、
前記側壁と前記反応室の内壁との間に設けられた第2のヒータと、
前記基板保持部を回転させる回転駆動機構と、
を備える気相成長装置。 - 前記第2の領域の内周直径が前記保持壁の直径の100%以上である請求項1記載の気相成長装置。
- 前記側壁の内周直径が前記基板保持部の直径の105%以上200%以下である請求項1記載の気相成長装置。
- 前記回転駆動機構は、前記基板を300rpm以上3000rpm以下の回転速度で回転させる請求項1記載の気相成長装置。
- 前記プロセスガス供給部は、前記第2の領域の周囲に設けられ、前記側壁と前記第2のヒータとの間の領域に第3のプロセスガスを供給可能な第3の領域を有し、
前記側壁は、前記第3のプロセスガスを前記側壁の外側から前記側壁の内側へ通過させるガス通過孔を有する請求項1記載の気相成長装置。 - 前記第3のプロセスガスはアルゴンガスである請求項5記載の気相成長装置。
- 基板を300rpm以上の回転速度で回転させ、
前記基板を加熱し、
前記基板に向けて第1の流速で第1のプロセスガスを供給し、
前記基板に向けて、前記第1のプロセスガスが供給される領域よりも外側の領域に、第2の流速で前記第1のプロセスガスよりも炭素/シリコン原子比の高い第2のプロセスガスを供給し、
前記第1の流速、前記第2の流速、及び、前記回転速度を制御して、前記第2のプロセスガスが前記基板の中心方向に引き込まれる流れを形成し、前記基板の表面に炭化珪素膜を形成する気相成長方法。 - 前記第1の流速、及び、前記第2の流速は、0.2m/sec以上1.0m/sec以下である請求項7記載の気相成長方法。
- 前記第2の流速が前記第1の流速の50%以上200%以下である請求項7記載の気相成長方法。
- 前記基板を1500℃以上に加熱する請求項7記載の気相成長方法。
- 前記第1のプロセスガス及び前記第2のプロセスガスは窒素を含む請求項7記載の気相成長方法。
- 基板を300rpm以上の回転速度で回転させ、
前記基板を加熱し、
前記基板に向けて、炭素、シリコン、及び、n型不純物を含む第1のプロセスガスを供給し、
前記基板に向けて、前記第1のプロセスガスが供給される領域よりも外側の領域に、炭素、及び、n型不純物を含み、前記第1のプロセスガスよりも炭素/シリコン原子比の高い第2のプロセスガスを供給し、
前記基板の表面の直上のプロセスガスの実効的な炭素/シリコン原子比が1未満となる状態で、前記基板の表面に第1の炭化珪素膜を形成し、
前記基板に向けて、炭素、シリコン、及び、n型不純物を含む第3のプロセスガスを供給し、
前記基板に向けて、前記第3のプロセスガスが供給される領域よりも外側の領域に、炭素、及び、n型不純物を含み、前記第3のプロセスガスよりも炭素/シリコン原子比の高い第4のプロセスガスを供給し、
前記基板の表面の直上のプロセスガスの実効的な炭素/シリコン原子比が1以上となる状態で、前記基板の表面に前記第1の炭化珪素膜よりもn型不純物の低い第2の炭化珪素膜を形成する気相成長方法。 - 前記第1の炭化珪素膜を形成する際に前記基板の中心部及び前記基板の外周部の前記基板の表面の直上のプロセスガスの実効的な炭素/シリコン原子比が1未満となり、
前記第2の炭化珪素膜を形成する際に前記基板の中心部及び前記基板の外周部の前記基板の表面の直上のプロセスガスの実効的な炭素/シリコン原子比が1以上となる請求項12記載の気相成長方法。 - 前記第1の炭化珪素膜のn型不純物濃度が1×1017cm-3以上であり、前記第2の炭化珪素膜のn型不純物濃度が1×1016cm-3以下である請求項12記載の気相成長方法。
- 前記n型不純物は窒素である請求項12記載の気相成長方法。
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