JP2012054327A - 半導体製造方法 - Google Patents
半導体製造方法 Download PDFInfo
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Abstract
【解決手段】反応室内にウェーハを搬入し、支持部材上に載置し、ウェーハの表面に、ソースガスを含むプロセスガスを供給し、ウェーハを第1の回転数で回転させながら、ヒータの出力を制御して所定温度に加熱することにより、ウェーハの表面に成膜を行い、ソースガスの供給を止め、ウェーハの回転数を、ウェーハのオフセットバランスを保持可能な第2の回転数に降下させるとともに、ヒータの出力を止め、第2の回転数で回転させながらウェーハを降温させる。
【選択図】図2
Description
11a…石英カバー
12…プロセスガス供給機構
12a…ガス供給口
13…ガス排出機構
13a…ガス排出口
14…整流板
15…サセプタ
16…リング
17…回転駆動制御機構
18a…インヒータ
18b…アウトヒータ
19…温度制御機構
20…リフレクタ
21…突き上げピン
51、61…パージガス
Claims (5)
- 反応室内にウェーハを搬入し、支持部材上に載置し、
前記ウェーハの表面に、ソースガスを含むプロセスガスを供給し、前記ウェーハを第1の回転数で回転させながら、ヒータの出力を制御して所定温度に加熱することにより、前記ウェーハの表面に成膜を行い、
前記ソースガスの供給を止め、
前記ウェーハの回転数を、前記ウェーハのオフセットバランスを保持可能な第2の回転数に降下させるとともに、前記ヒータの出力を止め、
前記第2の回転数で回転させながら前記ウェーハを降温させる、
ことを特徴とする半導体製造方法。 - 少なくとも前記所定温度より100℃下がるまで、前記第2の回転数で回転させることを特徴とする請求項1に記載の半導体製造方法。
- 前記ウェーハを降温させる際、前記ウェーハの表面にH2ガスを供給することを特徴とする請求項1又は請求項2に記載の半導体製造方法。
- 前記第2の回転数は、前記第1の回転数の50%以上であることを特徴とする請求項1から請求項3のいずれか1項に記載の半導体製造方法。
- 前記成膜により、前記ウェーハ上に40μm以上の膜が形成されることを特徴とする請求項1から請求項4のいずれか1項に記載の半導体製造方法。
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